JPWO2020203516A1 - - Google Patents
Info
- Publication number
- JPWO2020203516A1 JPWO2020203516A1 JP2021511518A JP2021511518A JPWO2020203516A1 JP WO2020203516 A1 JPWO2020203516 A1 JP WO2020203516A1 JP 2021511518 A JP2021511518 A JP 2021511518A JP 2021511518 A JP2021511518 A JP 2021511518A JP WO2020203516 A1 JPWO2020203516 A1 JP WO2020203516A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019069278 | 2019-03-29 | ||
PCT/JP2020/013202 WO2020203516A1 (ja) | 2019-03-29 | 2020-03-25 | 温度勾配反転手段を備える半導体基板の製造装置及び半導体基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2020203516A1 true JPWO2020203516A1 (ja) | 2020-10-08 |
Family
ID=72668171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021511518A Pending JPWO2020203516A1 (ja) | 2019-03-29 | 2020-03-25 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220189797A1 (ja) |
EP (1) | EP3951026A4 (ja) |
JP (1) | JPWO2020203516A1 (ja) |
CN (1) | CN114174570B (ja) |
TW (1) | TWI827826B (ja) |
WO (1) | WO2020203516A1 (ja) |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3698109B2 (ja) * | 2002-02-21 | 2005-09-21 | 住友電気工業株式会社 | Ii−vi族化合物半導体結晶の成長方法 |
US9028612B2 (en) * | 2010-06-30 | 2015-05-12 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
WO2010077639A2 (en) * | 2008-12-08 | 2010-07-08 | Ii-Vi Incorporated | Improved axial gradient transport (agt) growth process and apparatus utilizing resistive heating |
JP5875143B2 (ja) * | 2011-08-26 | 2016-03-02 | 学校法人関西学院 | 半導体ウエハの製造方法 |
JP2013075789A (ja) * | 2011-09-30 | 2013-04-25 | Fujikura Ltd | 化合物半導体単結晶の製造装置および製造方法 |
JP6080075B2 (ja) * | 2013-06-13 | 2017-02-15 | 学校法人関西学院 | SiC基板の表面処理方法 |
JP6372310B2 (ja) * | 2014-10-30 | 2018-08-15 | 株式会社デンソー | 化学気相成長装置に用いられるサセプタおよびそれを備えた化学気相成長装置 |
JP6751874B2 (ja) | 2014-11-18 | 2020-09-09 | 東洋炭素株式会社 | SiC基板のエッチング方法 |
WO2017053883A1 (en) * | 2015-09-24 | 2017-03-30 | Melior Innovations, Inc. | Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide |
JP6593212B2 (ja) * | 2015-09-30 | 2019-10-23 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法 |
US11359307B2 (en) * | 2016-04-28 | 2022-06-14 | Kwansei Gakuin Educational Foundation | Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer |
KR102604446B1 (ko) * | 2017-03-22 | 2023-11-22 | 토요타 쯔우쇼우 가부시키가이샤 | 개질 SiC 웨이퍼의 제조 방법, 에피택셜층 부착 SiC 웨이퍼, 그의 제조 방법, 및 표면 처리 방법 |
JP2018158858A (ja) * | 2017-03-22 | 2018-10-11 | 日本電信電話株式会社 | 結晶成長方法および装置 |
-
2020
- 2020-03-25 WO PCT/JP2020/013202 patent/WO2020203516A1/ja unknown
- 2020-03-25 EP EP20783505.9A patent/EP3951026A4/en active Pending
- 2020-03-25 CN CN202080024455.0A patent/CN114174570B/zh active Active
- 2020-03-25 JP JP2021511518A patent/JPWO2020203516A1/ja active Pending
- 2020-03-25 US US17/600,087 patent/US20220189797A1/en active Pending
- 2020-03-27 TW TW109110378A patent/TWI827826B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI827826B (zh) | 2024-01-01 |
EP3951026A1 (en) | 2022-02-09 |
EP3951026A4 (en) | 2022-12-21 |
TW202044373A (zh) | 2020-12-01 |
CN114174570A (zh) | 2022-03-11 |
WO2020203516A1 (ja) | 2020-10-08 |
CN114174570B (zh) | 2024-04-30 |
US20220189797A1 (en) | 2022-06-16 |
Similar Documents
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