JPWO2019220721A1 - 圧電性材料基板と支持基板との接合体 - Google Patents
圧電性材料基板と支持基板との接合体 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 151
- 239000000463 material Substances 0.000 title claims abstract description 103
- 239000011800 void material Substances 0.000 claims abstract description 28
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 10
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 76
- 238000001994 activation Methods 0.000 description 12
- 230000004913 activation Effects 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 238000010897 surface acoustic wave method Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000678 plasma activation Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 239000007789 gas Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000019687 Lamb Nutrition 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 sialon Chemical compound 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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Abstract
Description
支持基板、
ニオブ酸リチウム、タンタル酸リチウムおよびニオブ酸リチウム−タンタル酸リチウムからなる群より選ばれた材質からなる圧電性材料基板、および
前記支持基板と前記圧電性材料基板とを接合し、前記圧電性材料基板の接合面に接している接合層
を備えている接合体であって、
前記接合層に、前記圧電性材料基板から前記支持基板へと向かって伸びるボイドが設けられていることを特徴とする。
まず、図1(a)に示すように、一対の主面1a、1bを有する圧電性材料基板1を準備する。次いで、主面1aに加工Aを施すことによって、粗面化する。次いで、図1(b)に示すように、圧電性材料基板1の主面1a上に接合層2を成膜する。この接合層2の表面2aを、鏡面を得る目的でCMP研磨する。次いで、図1(c)に示すように、接合層2の表面2aに対して矢印Bのようにプラズマを照射し、表面活性化された接合面2bを得る。
本例では、図1(a)に示すように、一対の主面1a、1bを有する圧電性材料基板1を準備する。次いで、主面1aに加工Aを施すことによって、粗面化する。次いで、図1(b)に示すように、圧電性材料基板1の主面1a上に接合層2を成膜する。この接合層2の表面を、鏡面を得る目的でCMP研磨する。次いで、図1(c)に示すように、接合層2の接合面に対して矢印Bのようにプラズマを照射し、表面活性化された接合面2bを得る。
SEM装置:CarlZeiss社製 Ultra55
加速電圧:2kV
倍率:4000倍
ただし、ボイドの全長lは、ボイドの圧電性単結晶基板側末端から支持基板側末端までの全経路の長さ(道のり)を意味している。また、ボイドの圧電性単結晶基板側末端における幅tは、圧電性単結晶基板と接合層との界面に平行に見たボイドの幅とする。
支持基板3の材質は特に限定されないが、好ましくは、シリコン、水晶、サイアロン、ムライト、サファイアおよび透光性アルミナからなる群より選ばれた材質からなる。これによって、弾性波素子6、16の周波数の温度特性を一層改善することができる。
プラズマ処理した基板の接合面同士を室温で互いに接触させる。このとき真空中で処理してもよいが、より好ましくは大気中で接触させる。
具体的には、弾性波素子6、16としては、弾性表面波デバイスやラム波素子、薄膜共振子(FBAR)などが知られている。例えば、弾性表面波デバイスは、圧電性材料基板の表面に、弾性表面波を励振する入力側のIDT(Interdigital Transducer)電極(櫛形電極、すだれ状電極ともいう)と弾性表面波を受信する出力側のIDT電極とを設けたものである。入力側のIDT電極に高周波信号を印加すると、電極間に電界が発生し、弾性表面波が励振されて圧電性材料基板上を伝搬していく。そして、伝搬方向に設けられた出力側のIDT電極から、伝搬された弾性表面波を電気信号として取り出すことができる。
図1〜図3を参照しつつ説明した方法に従い、図3(c)に示す弾性波素子6を作製した。
バイアス電力 :6000W
Arガス流量:100sccm
マイクロ波電力 :1500W
O2ガス流量:200sccm
レート:0.3nm/sec
成膜時のチャンバー内圧力:0.1Pa
成膜した酸化珪素を接合に必要な平滑度が得られるようCMP加工した。
研磨後の接合層の表面粗さをAFM(原子間力顕微鏡)で測定したところ、Raが0.4nmと接合に十分な鏡面が得られていることを確認した。
実施例Aにおいて、接合層の材質を五酸化タンタルに変更した。ただし表面活性化にはプラズマではなく、Ar原子ビームを用いた。この結果、実施例Aと同様の結果が得られた。
実施例Aにおいて、圧電性材料基板1の材質をニオブ酸リチウムに変更した。この結果、実施例Aと同様の結果が得られた。
実施例Aと同様にして接合体を作製した。ただし、成膜時のバイアス電力を6000Wから3000Wと半分に落とし、成膜レートをおおよそ1/2とした。
比較例Aにおいて、接合層13の材質を五酸化タンタルに変更した。また表面活性化には前述の通りAr原子ブームを用いた。この結果、比較例Aと同様の結果が得られた。
Claims (7)
- 支持基板、
ニオブ酸リチウム、タンタル酸リチウムおよびニオブ酸リチウム−タンタル酸リチウムからなる群より選ばれた材質からなる圧電性材料基板、および
前記支持基板と前記圧電性材料基板とを接合し、前記圧電性材料基板の主面に接している接合層
を備えている接合体であって、
前記接合層に、前記圧電性材料基板から前記支持基板へと向かって伸びるボイドが設けられていることを特徴とする、接合体。 - 前記圧電性材料基板の前記主面に凹部が設けられており、前記ボイドが前記凹部に連通していることを特徴とする、請求項1記載の接合体。
- 前記ボイドが前記接合層を厚さ方向に向かって貫通していることを特徴とする、請求項2記載の接合体。
- 前記接合層が酸化珪素および五酸化タンタルからなる群より選ばれた材質からなることを特徴とする、請求項1〜3のいずれか一つの請求項に記載の接合体。
- 前記接合層が前記支持基板の主面に接していることを特徴とする、請求項1〜4のいずれか一つの請求項に記載の接合体。
- 前記接合層と前記支持基板との間に中間層を有することを特徴とする、請求項1〜4のいずれか一つの請求項に記載の接合体。
- 前記圧電性材料基板の厚さが20μm以下であることを特徴とする、請求項1〜6のいずれか一つの請求項に記載の接合体。
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