JPWO2019215538A1 - 表示装置、表示モジュール、及び電子機器 - Google Patents
表示装置、表示モジュール、及び電子機器 Download PDFInfo
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- JPWO2019215538A1 JPWO2019215538A1 JP2020517625A JP2020517625A JPWO2019215538A1 JP WO2019215538 A1 JPWO2019215538 A1 JP WO2019215538A1 JP 2020517625 A JP2020517625 A JP 2020517625A JP 2020517625 A JP2020517625 A JP 2020517625A JP WO2019215538 A1 JPWO2019215538 A1 JP WO2019215538A1
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Abstract
Description
本実施の形態では、本発明の一態様の表示装置について図1〜図13を用いて説明する。
図1(A)に、発光素子110W及び発光素子110aを有する表示装置を示す。
図2(A)、図2(B)に画素130の上面図の一例を示す。図2(A)に示す画素130は、1行4列に並ぶ副画素を有する。図2(B)に示す画素130は、2行2列に並ぶ副画素を有する。
図3(A)〜図3(E)に、半透過層116の上面レイアウトの例を示す。
次に、図2(C)に示す表示装置に構成要素を加えた例を、図4(A)〜図4(C)に示す。なお、図2(C)で説明した構成要素については、説明を省略する。
次に、本実施の形態の表示装置のより具体的な構成について図5〜図8を用いて説明する。
本発明の一態様では、タッチセンサが搭載された表示装置(以下、タッチパネルとも記す)を作製することができる。図9〜図11を用いて、タッチパネルの構成例を説明する。
次に、表示装置に用いることができるトランジスタについて、説明する。
半導体層には、酸化物半導体として機能する金属酸化物を用いることが好ましい。以下では、半導体層に適用可能な金属酸化物について説明する。
本実施の形態では、本発明の一態様の表示装置について図14〜図18を用いて説明する。
本実施の形態では、本発明の一態様の表示装置について、図19及び図20を用いて説明する。
本実施の形態では、本発明の一態様の電子機器について、図21〜図23を用いて説明する。
Claims (11)
- 第1の画素電極、第2の画素電極、発光層、共通電極、第1の保護層、及び半透過層を有し、
前記発光層は、前記第1の画素電極上に位置する第1の領域と、前記第2の画素電極上に位置する第2の領域と、を有し、
前記共通電極は、前記発光層上に位置し、
前記第1の保護層は、前記共通電極上に位置し、
前記半透過層は、前記第1の保護層上に位置し、
前記半透過層の可視光に対する反射性は、前記共通電極の可視光に対する反射性よりも高く、
前記半透過層は、前記第1の領域と重ならず、
前記半透過層は、前記第2の領域と重なる、表示装置。 - 第1の画素電極、第2の画素電極、発光層、共通電極、第1の保護層、及び半透過層を有し、
前記発光層は、前記第1の画素電極上に位置する第1の領域と、前記第2の画素電極上に位置する第2の領域と、を有し、
前記共通電極は、前記発光層上に位置し、
前記第1の保護層は、前記共通電極上に位置し、
前記半透過層は、前記第1の保護層上に位置し、
前記半透過層の可視光に対する反射性は、前記共通電極の可視光に対する反射性よりも高く、
前記半透過層は、前記第1の領域と重なる位置に開口を有し、
前記半透過層は、前記第2の領域と重なる、表示装置。 - 請求項1または2において、
さらに、第2の保護層を有し、
前記第2の保護層は、前記第1の領域と重なる領域において、前記第1の保護層と接し、かつ、前記第2の領域と重なる領域において、前記半透過層と接する、表示装置。 - 請求項1または2において、
さらに、可視光を透過する導電層及び第2の保護層を有し、
前記可視光を透過する導電層は、前記共通電極上に位置し、
前記第2の保護層は、前記可視光を透過する導電層上に位置し、
前記可視光を透過する導電層は、前記共通電極と接する領域と、前記半透過層と接する領域と、前記第1の保護層と前記第2の保護層との間に位置する領域と、前記第1の保護層と前記半透過層との間に位置する領域と、を有する、表示装置。 - 請求項1乃至4のいずれか一において、
さらに、第1の光学調整層及び第2の光学調整層を有し、
前記第1の光学調整層は、前記第1の画素電極と前記発光層との間に位置し、
前記第2の光学調整層は、前記第2の画素電極と前記発光層との間に位置し、
前記第1の画素電極及び前記第2の画素電極は、それぞれ、可視光に対する反射性を有する、表示装置。 - 請求項1乃至4のいずれか一において、
さらに、第1の反射層、第2の反射層、第1の光学調整層、及び第2の光学調整層を有し、
前記第1の光学調整層は、前記第1の反射層上に位置し、
前記第2の光学調整層は、前記第2の反射層上に位置し、
前記第1の画素電極は、前記第1の光学調整層上に位置し、
前記第2の画素電極は、前記第2の光学調整層上に位置し、
前記第1の画素電極及び前記第2の画素電極は、それぞれ、可視光に対する透過性を有する、表示装置。 - 請求項1乃至6のいずれか一において、
さらに、着色層を有し、
前記着色層は、前記第1の保護層上に位置し、かつ、前記第2の領域と重なる、表示装置。 - 請求項1乃至7のいずれか一において、
さらに、第3の画素電極を有し、
前記発光層は、さらに、前記第3の画素電極上に位置する第3の領域を有し、
前記半透過層は、前記第2の領域と重なる第4の領域と、前記第3の領域と重なる第5の領域と、を有し、
前記第4の領域の厚さは、前記第5の領域の厚さと異なる、表示装置。 - 請求項1乃至8のいずれか一において、
さらに、トランジスタ、絶縁層、第1の導電層、及び第2の導電層を有し、
前記第1の導電層及び前記第2の導電層は、それぞれ、前記トランジスタが有する電極と同一の材料を有し、
前記トランジスタは、前記絶縁層の第1の開口を介して、前記第1の画素電極と電気的に接続され、
前記共通電極は、前記絶縁層の第2の開口を介して、前記第1の導電層と電気的に接続され、
前記半透過層は、前記絶縁層の第3の開口を介して、前記第2の導電層と電気的に接続され、
前記第3の開口は、前記第2の開口よりも、前記表示装置の外側に位置する、表示装置。 - 請求項1乃至9のいずれか一に記載の表示装置と、コネクタまたは集積回路と、を有する、表示モジュール。
- 請求項10に記載の表示モジュールと、
アンテナ、バッテリ、筐体、カメラ、スピーカ、マイク、及び操作ボタンのうち、少なくとも一つと、を有する、電子機器。
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JP2022127597A (ja) * | 2021-02-19 | 2022-08-31 | 株式会社半導体エネルギー研究所 | 電子装置 |
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CN113658518B (zh) * | 2021-08-24 | 2023-07-04 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置 |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011071042A (ja) * | 2009-09-28 | 2011-04-07 | Fujifilm Corp | 光学部材 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100630587B1 (ko) * | 2001-06-01 | 2006-10-04 | 세이코 엡슨 가부시키가이샤 | 컬러 필터의 제조 방법, 표시 장치의 제조 방법과 그 제조 장치, 및 전자 기기의 제조 방법 |
KR100975132B1 (ko) * | 2002-12-27 | 2010-08-11 | 엘지디스플레이 주식회사 | 액정 표시 장치 |
US7030553B2 (en) | 2003-08-19 | 2006-04-18 | Eastman Kodak Company | OLED device having microcavity gamut subpixels and a within gamut subpixel |
US7129634B2 (en) * | 2004-04-07 | 2006-10-31 | Eastman Kodak Company | Color OLED with added color gamut pixels |
US7510454B2 (en) * | 2006-01-19 | 2009-03-31 | Eastman Kodak Company | OLED device with improved power consumption |
US20070205423A1 (en) * | 2006-03-03 | 2007-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
EP1843194A1 (en) * | 2006-04-06 | 2007-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US7888860B2 (en) * | 2006-08-25 | 2011-02-15 | Samsung Electronics Co., Ltd. | Organic light emitting device |
JP4479737B2 (ja) * | 2007-03-07 | 2010-06-09 | セイコーエプソン株式会社 | 発光装置およびその製造方法ならびに電子機器 |
US7816677B2 (en) * | 2008-02-12 | 2010-10-19 | Samsung Electronics Co., Ltd. | Organic light emitting device |
KR101448003B1 (ko) | 2008-04-04 | 2014-10-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP5019638B2 (ja) * | 2008-08-22 | 2012-09-05 | 株式会社ジャパンディスプレイセントラル | 有機el表示装置 |
US8237633B2 (en) * | 2009-05-12 | 2012-08-07 | Global Oled Technology Llc | Electro-luminescent display with adjustable white point |
JP5427527B2 (ja) | 2009-09-28 | 2014-02-26 | ユー・ディー・シー アイルランド リミテッド | 有機発光表示装置及び有機発光表示装置の製造方法 |
JP5672695B2 (ja) * | 2009-12-18 | 2015-02-18 | セイコーエプソン株式会社 | 表示装置 |
KR101241131B1 (ko) * | 2010-08-03 | 2013-03-11 | 엘지디스플레이 주식회사 | 유기전계 발광소자 |
KR102079188B1 (ko) | 2012-05-09 | 2020-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
KR101411656B1 (ko) * | 2012-06-27 | 2014-06-25 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 및 이의 제조 방법 |
US8883531B2 (en) * | 2012-08-28 | 2014-11-11 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
CN102944957B (zh) * | 2012-11-15 | 2015-04-15 | 京东方科技集团股份有限公司 | 一种半透半反液晶显示装置 |
KR102113149B1 (ko) * | 2012-12-28 | 2020-05-20 | 엘지디스플레이 주식회사 | 유기 발광 소자, 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
JP6174877B2 (ja) | 2013-03-21 | 2017-08-02 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
JP6115274B2 (ja) * | 2013-04-11 | 2017-04-19 | ソニー株式会社 | 表示装置および電子機器 |
JP6170421B2 (ja) * | 2013-12-05 | 2017-07-26 | 株式会社ジャパンディスプレイ | 有機el表示装置 |
JP6223210B2 (ja) * | 2014-01-30 | 2017-11-01 | 株式会社ジャパンディスプレイ | 表示装置 |
CN110310962A (zh) * | 2014-06-13 | 2019-10-08 | 株式会社半导体能源研究所 | 显示装置 |
KR102289701B1 (ko) * | 2014-12-01 | 2021-08-12 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
JP2016143585A (ja) | 2015-02-03 | 2016-08-08 | ソニー株式会社 | 表示装置及び電子機器 |
KR102552276B1 (ko) | 2015-02-24 | 2023-07-07 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP6802701B2 (ja) * | 2015-12-18 | 2020-12-16 | 株式会社半導体エネルギー研究所 | 表示装置、モジュール及び電子機器 |
KR102289220B1 (ko) * | 2016-03-18 | 2021-08-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US20180040638A1 (en) | 2016-08-05 | 2018-02-08 | Innolux Corporation | Display device |
US10217416B2 (en) | 2016-07-05 | 2019-02-26 | Innolux Corporation | Display device |
US10529745B2 (en) | 2016-07-05 | 2020-01-07 | Innolux Corporation | Display device |
CN112542468A (zh) | 2016-07-05 | 2021-03-23 | 群创光电股份有限公司 | 显示装置 |
TW201813147A (zh) | 2016-07-15 | 2018-04-01 | 半導體能源研究所股份有限公司 | 顯示裝置、顯示模組、電子裝置及顯示裝置的製造方法 |
US10430000B2 (en) | 2016-08-05 | 2019-10-01 | Innolux Corporation | Touch display device |
US10330993B2 (en) * | 2016-12-23 | 2019-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
CN107634084B (zh) | 2017-09-13 | 2020-08-25 | 云谷(固安)科技有限公司 | 顶发射白光oled显示装置 |
-
2019
- 2019-04-29 CN CN201980029899.0A patent/CN112074894B/zh active Active
- 2019-04-29 US US17/052,231 patent/US11587981B2/en active Active
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- 2019-04-29 KR KR1020207034577A patent/KR102671922B1/ko active IP Right Grant
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- 2023-12-05 JP JP2023205076A patent/JP2024023537A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011071042A (ja) * | 2009-09-28 | 2011-04-07 | Fujifilm Corp | 光学部材 |
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