JPWO2019186805A1 - 有機el表示装置及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000010408 film Substances 0.000 claims description 268
- 238000000034 method Methods 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 13
- 229920000178 Acrylic resin Polymers 0.000 claims description 8
- 239000004925 Acrylic resin Substances 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000009719 polyimide resin Substances 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 229910021485 fumed silica Inorganic materials 0.000 claims description 3
- 239000000284 extract Substances 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 132
- 239000000463 material Substances 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 230000003746 surface roughness Effects 0.000 description 10
- 239000011247 coating layer Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 239000003999 initiator Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910019015 Mg-Ag Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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Abstract
Description
次に、図1に示される有機EL表示装置及びその製造方法について具体的に説明がされる。
実施例1
次に、図1に示される有機EL表示装置の第2無機絶縁膜33のない有機EL表示装置の製造方法が、図2A〜2Bのフローチャート及び図3A〜3Gの製造工程の図を参照しながら説明される。
図2A〜2B及び図3A〜3Gに示される実施例1の製造方法は、平坦化膜30が第1無機絶縁膜31と有機絶縁膜32によって形成されていた(図1の構造の第2無機絶縁膜33が無い構造)。このような構造でも、有機絶縁膜32の表面が研磨されており、その表面に第1電極41が形成されている。そのため、平坦化膜30の表面は平坦になっていて問題はない。しかし、コンタクト孔30aを形成する際に、ウェットエッチングなどを行うと水分などが有機絶縁膜32に浸入しやすく、ドライエッチングで行っても、エッチングガスなどが浸入しやすいという問題がある。水分などが浸入すると、発光素子が形成されて動作しているときに、浸み出してくると有機発光層43又は第2電極44の材料を劣化させる恐れがある。そのため、第2無機絶縁膜33が有機絶縁膜32の表面に形成されることが好ましく、図1にはその構造が示されている。その製造方法が図4A〜4Eを参照しながら説明される。
(1)本発明の一実施形態に係る有機EL表示装置は、薄膜トランジスタを含む駆動回路が形成された表面を有する基板と、前記駆動回路を覆うことによって前記基板の前記表面を平坦化する平坦化膜と、前記平坦化膜の表面上に形成され、前記駆動回路と接続された第1電極、前記第1電極の上に形成された有機発光層、及び前記有機発光層の上に形成された第2電極を有する有機発光素子と、を備え、前記平坦化膜は、前記駆動回路の上に積層された第1無機絶縁膜及び有機絶縁膜を含んでおり、前記有機絶縁膜の表面が、算術平面粗さRaで50nm以下に形成されている。
20 TFT
21 半導体層
30 平坦化膜
31 第1無機絶縁膜
32 有機絶縁膜
33 第2無機絶縁膜
40 有機発光素子
41 第1電極(陽極)
43 有機発光層
44 第2電極(陰極)
(1)本発明の一実施形態に係る有機EL表示装置は、薄膜トランジスタを含む駆動回路が形成された表面を有する基板と、前記駆動回路を覆うことによって前記基板の前記表面を平坦化する平坦化膜と、前記平坦化膜の表面上に形成され、前記駆動回路と接続された第1電極、前記第1電極の上に形成された有機発光層、及び前記有機発光層の上に形成された第2電極を有する有機発光素子と、を備え、前記平坦化膜は、前記駆動回路の上に積層された第1無機絶縁膜及び有機絶縁膜を含んでおり、前記有機絶縁膜の表面が、算術平均粗さRaで50nm以下に形成されている。
Claims (10)
- 薄膜トランジスタを含む駆動回路が形成された表面を有する基板と、
前記駆動回路を覆うことによって前記基板の前記表面を平坦化する平坦化膜と、
前記平坦化膜の表面上に形成され、前記駆動回路と接続された第1電極、前記第1電極の上に形成された有機発光層、及び前記有機発光層の上に形成された第2電極を有する有機発光素子と、
を備え、
前記平坦化膜は、前記駆動回路の上に積層された第1無機絶縁膜及び有機絶縁膜を含んでおり、
前記有機絶縁膜の表面が、算術平面粗さRaで50nm以下に形成されている、有機EL表示装置。 - 前記有機絶縁膜が、アクリル樹脂、又はポリイミド樹脂である、請求項1に記載の有機EL表示装置。
- 前記有機絶縁膜が非感光性樹脂である、請求項1又は2に記載の有機EL表示装置。
- 前記平坦化膜が、前記有機絶縁膜の上に第2無機絶縁膜が形成されることによって3層構造である、請求項1〜3のいずれか1項に記載の有機EL表示装置。
- 前記コンタクト孔が、前記3層構造に一括して形成されている、請求項4に記載の有機EL表示装置。
- 前記有機発光素子は、前記薄膜トランジスタが前記有機発光層の投影領域には形成されないで、前記基板側から光を取り出すボトムエミッション型の発光素子、又は前記薄膜トランジスタが前記有機発光層の投影領域にも形成され、前記第2電極から光を取り出すトップエミッション型の発光素子である、請求項1〜5のいずれか1項に記載の有機EL表示装置。
- 基板の上に、薄膜トランジスタを含む駆動回路を形成する工程と、
前記駆動回路の表面に第1無機絶縁膜及び有機絶縁膜を形成する工程と、
前記有機絶縁膜の表面をCMP研磨する工程と、
前記有機絶縁膜及び前記第1無機絶縁膜に、前記TFTに達するコンタクト孔を形成する工程と、
前記コンタクト孔の内部に金属を埋め込むと共に、所定の領域に第1電極を形成する工程と、
前記第1電極の上に有機発光層を形成する工程と、
前記有機発光層の上に第2電極を形成する工程と、
を含む、有機EL表示装置の製造方法。 - 前記有機絶縁膜の上に第2無機絶縁膜を形成し、前記第2無機絶縁膜、前記有機絶縁膜及び前記第1絶縁膜の3層を一括して前記コンタクト孔を形成する、請求項7に記載の製造方法。
- 前記平坦化の工程を、中性のセリア系研磨材、又はヒュームドシリカ系スラリーを水とアルコールと共に行うことによって、表面平坦度を算術平均粗さRaで20nm以上、50nm以下に研磨する、請求項7又8に記載の製造方法。
- 前記コンタクト孔の形成を、ドライエッチングによって行う請求項7〜9のいずれか1項に記載の製造方法。
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2018
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- 2018-03-28 WO PCT/JP2018/012906 patent/WO2019186805A1/ja active Application Filing
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Also Published As
Publication number | Publication date |
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US20210367018A1 (en) | 2021-11-25 |
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US20230354652A1 (en) | 2023-11-02 |
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