JPWO2019123288A1 - 表示装置および電子機器 - Google Patents
表示装置および電子機器 Download PDFInfo
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- JPWO2019123288A1 JPWO2019123288A1 JP2019559870A JP2019559870A JPWO2019123288A1 JP WO2019123288 A1 JPWO2019123288 A1 JP WO2019123288A1 JP 2019559870 A JP2019559870 A JP 2019559870A JP 2019559870 A JP2019559870 A JP 2019559870A JP WO2019123288 A1 JPWO2019123288 A1 JP WO2019123288A1
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Abstract
Description
本実施の形態では、本発明の一態様である表示装置について、図面を参照して説明する。
図1は、本発明の一態様の表示装置に用いることができる画素回路10を説明する図である。
図3は、本発明の一態様の表示装置に用いることができる画素回路11を説明する図である。
本実施の形態では、液晶素子を用いた表示装置の構成例と、EL素子を用いた表示装置の構成例について説明する。なお、本実施の形態においては、実施の形態1で説明した表示装置の要素、動作および機能の説明は省略する。
本実施の形態では、上記実施の形態に示した各トランジスタに置き換えて用いることのできるトランジスタの一例について、図面を用いて説明する。
図20(A1)は、ボトムゲート型のトランジスタの一種であるチャネル保護型のトランジスタ810のチャネル長方向の断面図である。図20(A1)において、トランジスタ810は基板771上に形成されている。また、トランジスタ810は、基板771上に絶縁層772を介して電極746を有する。また、電極746上に絶縁層726を介して半導体層742を有する。電極746はゲート電極として機能できる。絶縁層726はゲート絶縁層として機能できる。
図22(A1)に例示するトランジスタ842は、トップゲート型のトランジスタの1つである。電極744aおよび電極744bは、絶縁層728および絶縁層729に形成した開口部において半導体層742と電気的に接続する。
本発明の一態様に係る表示装置を用いることができる電子機器として、表示機器、パーソナルコンピュータ、記録媒体を備えた画像記憶装置または画像再生装置、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図24(A)乃至図24(F)に示す。
Claims (6)
- 第1の画素回路と、第2の画素回路と、第1の配線と、第2の配線と、第3の配線と、第4の配線と、第5の配線と、第6の配線と、を有し、
前記第1の画素回路は、第1のトランジスタと、第2のトランジスタと、第1の容量素子と、第1の回路ブロックと、を有し、
前記第2の画素回路は、第3のトランジスタと、第4のトランジスタと、第2の容量素子と、第2の回路ブロックと、を有し、
前記第1のトランジスタのソースまたはドレインの一方は、前記第1の容量素子の一方の電極と電気的に接続され、
前記第1の容量素子の他方の電極は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記第1の回路ブロックと電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記第2の容量素子の一方の電極と電気的に接続され、
前記第2の容量素子の他方の電極は、前記第4のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第4のトランジスタのソースまたはドレインの一方は、前記第2の回路ブロックと電気的に接続され、
前記第2のトランジスタのゲート及び前記第4のトランジスタのゲートは、前記第1の配線と電気的に接続され、
前記第1のトランジスタのゲートは、前記第2の配線と電気的に接続され、
前記第3のトランジスタのゲートは、前記第3の配線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの他方は、前記第4の配線と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方、及び前記第3のトランジスタのソースまたはドレインの他方は、前記第5の配線と電気的に接続され、
前記第4のトランジスタのソースまたはドレインの他方は、前記第6の配線と電気的に接続され、
前記第1の回路ブロックは、第1の表示素子を有し、
前記第2の回路ブロックは、第2の表示素子を有する表示装置。 - 第1の画素回路と、第2の画素回路と、第1の配線と、第2の配線と、第3の配線と、第4の配線と、第5の配線と、第6の配線と、を有し、
前記第1の画素回路は、第1のトランジスタと、第2のトランジスタと、第1の容量素子と、第1の回路ブロックと、を有し、
前記第2の画素回路は、第3のトランジスタと、第4のトランジスタと、第2の容量素子と、第2の回路ブロックと、を有し、
前記第1のトランジスタのソースまたはドレインの一方は、前記第1の容量素子の一方の電極と電気的に接続され、
前記第1の容量素子の他方の電極は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記第1の回路ブロックと電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記第2の容量素子の一方の電極と電気的に接続され、
前記第2の容量素子の他方の電極は、前記第4のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第4のトランジスタのソースまたはドレインの一方は、前記第2の回路ブロックと電気的に接続され、
前記第2のトランジスタのゲートは、前記第1の配線と電気的に接続され、
前記第4のトランジスタのゲートは、前記第2の配線と電気的に接続され、
前記第1のトランジスタのゲート及び前記第3のトランジスタのゲートは、前記第3の配線と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第4の配線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの他方、及び前記第4のトランジスタのソースまたはドレインの他方は、前記第5の配線と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は、前記第6の配線と電気的に接続され、
前記第1の回路ブロックは、第1の表示素子を有し、
前記第2の回路ブロックは、第2の表示素子を有する表示装置。 - 請求項1または請求項2において、
前記第1の回路ブロックは、第5のトランジスタと、第6のトランジスタと、第3の容量素子と、前記第1の表示素子として第1の有機EL素子と、を有し、
前記第2の回路ブロックは、第7のトランジスタと、第8のトランジスタと、第4の容量素子と、前記第2の表示素子として第2の有機EL素子と、を有し、
前記第1の有機EL素子の一方の電極は、前記第6のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第6のトランジスタのソースまたはドレインの他方は、前記第3の容量素子の一方の電極と電気的に接続され、
前記第3の容量素子の一方の電極は、前記第5のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第5のトランジスタのゲートは、前記第3の容量素子の他方の電極と電気的に接続され、
前記第3の容量素子の他方の電極は、前記第1の容量素子の他方の電極と電気的に接続され、
前記第2の有機EL素子の一方の電極は、前記第8のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第8のトランジスタのソースまたはドレインの他方は、前記第4の容量素子の一方の電極と電気的に接続され、
前記第4の容量素子の一方の電極は、前記第7のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第7のトランジスタのゲートは、前記第4の容量素子の他方の電極と電気的に接続され、
前記第4の容量素子の他方の電極は、前記第2の容量素子の他方の電極と電気的に接続されている表示装置。 - 請求項1または請求項2において、
前記第1の回路ブロックは、第9のトランジスタと、第5の容量素子と、前記第1の表示素子として第1の液晶素子と、を有し、
前記第2の回路ブロックは、第10のトランジスタと、第6の容量素子と、前記第2の表示素子として第2の液晶素子と、を有し、
前記第1の液晶素子の一方の電極は、前記第5の容量素子の一方の電極と電気的に接続され、
前記第5の容量素子の一方の電極は、前記第9のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第9のトランジスタのソースまたはドレインの他方は、前記第1の容量素子の他方の電極と電気的に接続され、
前記第2の液晶素子の一方の電極は、前記第6の容量素子の一方の電極と電気的に接続され、
前記第6の容量素子の一方の電極は、前記第10のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第10のトランジスタのソースまたはドレインの他方は、前記第2の容量素子の他方の電極と電気的に接続されている表示装置。 - 請求項1乃至請求項4のいずれか一において、
前記第2のトランジスタは、チャネル形成領域に金属酸化物を有し、前記金属酸化物は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有する表示装置。 - 請求項1乃至請求項5のいずれか一に記載の表示装置と、カメラと、を有する電子機器。
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