JPWO2019111804A1 - How to drive optical semiconductor devices and optical semiconductor devices - Google Patents

How to drive optical semiconductor devices and optical semiconductor devices Download PDF

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JPWO2019111804A1
JPWO2019111804A1 JP2019558179A JP2019558179A JPWO2019111804A1 JP WO2019111804 A1 JPWO2019111804 A1 JP WO2019111804A1 JP 2019558179 A JP2019558179 A JP 2019558179A JP 2019558179 A JP2019558179 A JP 2019558179A JP WO2019111804 A1 JPWO2019111804 A1 JP WO2019111804A1
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正道 山西
正道 山西
徹 廣畑
徹 廣畑
田中　和典
和典 田中
和上 藤田
和上 藤田
彰 樋口
彰 樋口
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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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Abstract

光半導体素子の駆動方法は、第１電極と第４電極との間、及び第２電極と第４電極との間のそれぞれに順バイアスをかけることにより、第１領域及び第２領域を利得領域として機能させる共に、第３電極と第４電極との間に逆バイアスをかけることにより、第３領域を損失領域として機能させる工程を含む。第１領域及び第２領域を利得領域として機能させると共に第３領域を損失領域として機能させている状態において、第２領域を光が単位距離進行する間に獲得する利得に対応する値と光導波方向における第２領域の長さとの積は、第１領域を光が単位距離進行する間に獲得する利得に対応する値と光導波方向における第１領域の長さとの積よりも大きい。The driving method of the optical semiconductor element is to apply a forward bias between the first electrode and the fourth electrode and between the second electrode and the fourth electrode, respectively, so that the first region and the second region are gain regions. The third region is made to function as a loss region by applying a reverse bias between the third electrode and the fourth electrode. In a state where the first region and the second region function as a gain region and the third region functions as a loss region, the value corresponding to the gain acquired while the light travels a unit distance in the second region and the optical waveguide. The product of the length of the second region in the direction is greater than the product of the length of the first region in the optical waveguide direction and the value corresponding to the gain gained while the light travels a unit distance in the first region.

Description

本開示の一側面は、光半導体素子の駆動方法、及び光半導体素子に関する。 One aspect of the present disclosure relates to a driving method of an optical semiconductor element and an optical semiconductor element.

集光性に優れ且つ広いスペクトルを有する出力光を発生させ得る光源として、スーパールミネッセントダイオード（以下、ＳＬＤという）が注目されている。ＳＬＤとして、例えば特許文献１には、ダブルヘテロ構造の光導波路体がイオン注入領域によって発光領域と光損失領域とに電気的に分離された端面発光ダイオードが記載されている。 Super luminescent diodes (hereinafter referred to as SLDs) are attracting attention as light sources capable of generating output light having excellent light collection properties and a wide spectrum. As the SLD, for example, Patent Document 1 describes an end face light emitting diode in which an optical waveguide having a double heterostructure is electrically separated into a light emitting region and a light loss region by an ion implantation region.

特開平４−２５９２６２号公報Japanese Unexamined Patent Publication No. 4-259262

上述したような光半導体素子では、注入電流が増加するほど出力光の強度が大きくなるが、所定量よりも大きな電流が注入されると、光導波路体内で光が発振してしまい、良好な出力光を得ることができない。一方で、上述したような半導体素子には、更なる高出力化が望まれている。 In the optical semiconductor device as described above, the intensity of the output light increases as the injection current increases, but when a current larger than a predetermined amount is injected, the light oscillates inside the optical waveguide, resulting in good output. I can't get the light. On the other hand, it is desired that the semiconductor element as described above has a higher output.

本開示の一側面は、光半導体素子の高出力化を図ることができる光半導体素子の駆動方法、及びそのような駆動方法に適した光半導体素子を提供することを目的とする。 One aspect of the present disclosure is to provide a method for driving an optical semiconductor device capable of increasing the output of the optical semiconductor element, and an optical semiconductor element suitable for such a driving method.

本開示の一側面に係る光半導体素子の駆動方法では、光半導体素子は、活性層、並びに、活性層を挟む第１クラッド層及び第２クラッド層を含むダブルヘテロ構造として構成された光導波路体と、第２クラッド層上に設けられた第１電極と、光導波路体の光導波方向における第１電極の一方の側において第２クラッド層上に設けられた第２電極と、光導波路体の光導波方向における第１電極の他方の側において第２クラッド層上に設けられた第３電極と、光導波路体を挟んで、第１電極、第２電極及び第３電極と対向する少なくとも１つの第４電極と、を備え、光導波路体には、第２クラッド層の表面から第１クラッド層に至り、第１電極下の第１領域と第２電極下の第２領域との間を光学的に接続しつつ、第１領域と第２領域とを互いに電気的に分離する第１分離領域と、第２クラッド層の表面から第１クラッド層に至り、第１電極下の第１領域と第３電極下の第３領域との間を光学的に接続しつつ、第１領域と第３領域とを互いに電気的に分離する第２分離領域と、が設けられており、光半導体素子の駆動方法は、第１電極と少なくとも１つの第４電極との間、及び第２電極と少なくとも１つの第４電極との間のそれぞれに順バイアスをかけることにより、第１領域及び第２領域を利得領域として機能させる共に、第３電極と少なくとも１つの第４電極との間に逆バイアスをかけることにより、第３領域を損失領域として機能させる工程を含み、第１領域及び第２領域を利得領域として機能させると共に第３領域を損失領域として機能させている状態において、第２領域を光が単位距離進行する間に獲得する利得に対応する値と光導波方向における第２領域の長さとの積は、第１領域を光が単位距離進行する間に獲得する利得に対応する値と光導波方向における第１領域の長さとの積よりも大きい。 In the method for driving an optical semiconductor element according to one aspect of the present disclosure, the optical semiconductor element is an optical waveguide configured as a double heterostructure including an active layer and a first clad layer and a second clad layer sandwiching the active layer. And the first electrode provided on the second clad layer, the second electrode provided on the second clad layer on one side of the first electrode in the optical waveguide direction of the optical waveguide, and the optical waveguide of the optical waveguide. At least one facing the first electrode, the second electrode, and the third electrode with the optical waveguide sandwiched between the third electrode provided on the second clad layer on the other side of the first electrode in the optical waveguide direction. A fourth electrode is provided, and the optical waveguide includes an optical waveguide from the surface of the second clad layer to the first clad layer, and optics between the first region under the first electrode and the second region under the second electrode. The first separation region that electrically separates the first region and the second region from each other while being connected to each other, and the first region under the first electrode from the surface of the second clad layer to the first clad layer. A second separation region that electrically separates the first region and the third region from each other while optically connecting to the third region under the third electrode is provided, and the optical semiconductor element is provided with a second separation region. The driving method is to apply a forward bias between the first electrode and at least one fourth electrode, and between the second electrode and at least one fourth electrode, thereby forming the first region and the second region. It includes a step of making the third region function as a loss region by functioning as a gain region and applying a reverse bias between the third electrode and at least one fourth electrode, and gains the first region and the second region. In a state where the region functions as a region and the third region functions as a loss region, the value corresponding to the gain acquired while the light travels a unit distance in the second region and the length of the second region in the optical waveguide direction The product is greater than the product of the value corresponding to the gain gained while the light travels a unit distance in the first region and the length of the first region in the optical waveguide direction.

この光半導体素子の駆動方法では、第１領域及び第２領域を利得領域として機能させると共に第３領域を損失領域として機能させている状態において、第２領域を光が単位距離進行する間に獲得する利得に対応する値と光導波方向における第２領域の長さとの積（以下、第２領域の利得量という）が、第１領域を光が単位距離進行する間に獲得する利得に対応する値と光導波方向における第１領域の長さとの積（以下、第１領域の利得量という）よりも大きい。これにより、第１領域及び第２領域で発生した光を効果的に増倍させて取り出すことができ、光半導体素子の高出力化を図ることができる。 In this method of driving an optical semiconductor device, in a state where the first region and the second region function as a gain region and the third region functions as a loss region, the second region is acquired while the light travels a unit distance. The product of the value corresponding to the gain to be gained and the length of the second region in the optical waveguide direction (hereinafter referred to as the gain amount of the second region) corresponds to the gain obtained while the light travels a unit distance in the first region. It is larger than the product of the value and the length of the first region in the optical waveguide direction (hereinafter referred to as the gain amount of the first region). As a result, the light generated in the first region and the second region can be effectively multiplied and extracted, and the output of the photosemiconductor element can be increased.

本開示の一側面に係る光半導体素子の駆動方法では、活性層は、多重量子井戸構造を有していてもよい。この場合、光半導体素子の一層の高出力化を図ることができる。 In the method for driving an optical semiconductor device according to one aspect of the present disclosure, the active layer may have a multiple quantum well structure. In this case, it is possible to further increase the output of the optical semiconductor element.

本開示の一側面に係る光半導体素子の駆動方法において、第１領域及び前記第２領域を利得領域として機能させると共に第３領域を損失領域として機能させている状態では、活性層における第１準位から基底準位への遷移によって光が発生してもよい。この場合、光半導体素子の高出力化が好適に図られる。 In the method for driving an optical semiconductor element according to one aspect of the present disclosure, in a state where the first region and the second region function as a gain region and the third region functions as a loss region, the first quasi in the active layer. Light may be generated by the transition from the position to the base level. In this case, it is preferable to increase the output of the optical semiconductor element.

本開示の一側面に係る光半導体素子の駆動方法では、光導波方向は、真っ直ぐに延在する方向であってもよい。この場合、第２領域の利得量が第１領域の利得量よりも大きくなるように光半導体素子を駆動することが容易化される。更に、光導波方向が真っ直ぐに延在する方向であるため、良好なビームパターンを有する出力光を得ることができる。 In the method for driving an optical semiconductor device according to one aspect of the present disclosure, the optical waveguide direction may be a straight extending direction. In this case, it is easy to drive the optical semiconductor element so that the gain amount in the second region is larger than the gain amount in the first region. Further, since the optical waveguide direction is a straight extending direction, output light having a good beam pattern can be obtained.

本開示の一側面に係る光半導体素子の駆動方法では、第２領域における第１領域とは反対側の端面は、光導波方向に垂直な面であってもよい。この場合、第２領域の利得量が第１領域の利得量よりも大きくなるように光半導体素子を駆動することが一層容易化される。更に、当該端面が光導波方向に垂直な面であるため、一層良好なビームパターンを有する出力光を得ることができる。 In the method for driving an optical semiconductor device according to one aspect of the present disclosure, the end face of the second region opposite to the first region may be a plane perpendicular to the optical waveguide direction. In this case, it is further facilitated to drive the optical semiconductor element so that the gain amount in the second region is larger than the gain amount in the first region. Further, since the end face is a plane perpendicular to the optical waveguide direction, output light having a better beam pattern can be obtained.

本開示の一側面に係る光半導体素子の駆動方法では、第２領域における第１領域とは反対側の端面には、低反射層が設けられていてもよい。この場合、第２領域の利得量が第１領域の利得量よりも大きくなるように光半導体素子を駆動することがより一層容易化される。更に、出力光の出射面となる当該端面で出力光の一部が反射されることにより光学的なロスが生じるのを抑制することができる。 In the method for driving an optical semiconductor device according to one aspect of the present disclosure, a low reflection layer may be provided on an end surface of the second region opposite to the first region. In this case, it is further facilitated to drive the optical semiconductor element so that the gain amount in the second region is larger than the gain amount in the first region. Further, it is possible to suppress the occurrence of optical loss due to the reflection of a part of the output light on the end surface which is the emission surface of the output light.

本開示の一側面に係る光半導体素子の駆動方法では、第１分離領域は、イオン注入領域又は不純物拡散領域によって構成されており、第２分離領域は、イオン注入領域、不純物拡散領域、又は第２クラッド層とは伝導型が異なる半導体領域によって構成されていてもよい。この場合、第１分離領域により、第１領域と第２領域との間の光学的な接続及び電気的な分離を好適に実現することができる。また、第２分離領域により、第１領域と第３領域との間の光学的な接続及び電気的な分離を好適に実現することができる。 In the method for driving an optical semiconductor device according to one aspect of the present disclosure, the first separation region is composed of an ion implantation region or an impurity diffusion region, and the second separation region is an ion implantation region, an impurity diffusion region, or a first. It may be composed of a semiconductor region having a different conduction type from the two-clad layer. In this case, the first separation region can suitably realize the optical connection and electrical separation between the first region and the second region. In addition, the second separation region can suitably realize an optical connection and an electrical separation between the first region and the third region.

本開示の一側面に係る光半導体素子の駆動方法では、光導波方向における第２領域の長さは、光導波方向における第１領域の長さよりも長くてもよい。この場合、第２領域の利得量が第１領域の利得量よりも大きくなるように光半導体素子を駆動することがより一層容易化される。 In the method for driving an optical semiconductor device according to one aspect of the present disclosure, the length of the second region in the optical waveguide direction may be longer than the length of the first region in the optical waveguide direction. In this case, it is further facilitated to drive the optical semiconductor element so that the gain amount in the second region is larger than the gain amount in the first region.

本開示の一側面に係る光半導体素子の駆動方法では、第２領域は、第２クラッド層に垂直な方向から見た場合に、第１領域から遠ざかるほど幅が広くなるフレア形状をなしていてもよい。この場合、広いビームパターンを有する出力光を得ることができる。更に、第２領域がフレア形状をなしていることにより、注入される電流の密度を低減して利得飽和の発生を抑制することができると共に、熱の影響を低減することができるため、光半導体素子の一層の高出力化を図ることができる。 In the method for driving an optical semiconductor device according to one aspect of the present disclosure, the second region has a flare shape in which the width becomes wider as the distance from the first region increases when viewed from a direction perpendicular to the second clad layer. May be good. In this case, output light having a wide beam pattern can be obtained. Further, since the second region has a flare shape, the density of the injected current can be reduced, the occurrence of gain saturation can be suppressed, and the influence of heat can be reduced. It is possible to further increase the output of the element.

本開示の一側面に係る光半導体素子の駆動方法では、光半導体素子は、活性層、並びに、活性層を挟む第１クラッド層及び第２クラッド層を含むダブルヘテロ構造として構成された光導波路体と、第２クラッド層上に設けられた第１電極と、光導波路体の光導波方向における第１電極の一方の側において第２クラッド層上に設けられた第２電極と、光導波路体の光導波方向における第１電極の他方の側において第２クラッド層上に設けられた第３電極と、光導波路体を挟んで、第１電極、第２電極及び第３電極と対向する少なくとも１つの第４電極と、を備え、光導波路体には、第２クラッド層の表面から第１クラッド層に至り、第１電極下の第１領域と第２電極下の第２領域との間を光学的に接続しつつ、第１領域と第２領域とを互いに電気的に分離する第１分離領域と、第２クラッド層の表面から第１クラッド層に至り、第１電極下の第１領域と第３電極下の第３領域との間を光学的に接続しつつ、第１領域と第３領域とを互いに電気的に分離する第２分離領域と、が設けられており、光半導体素子の駆動方法は、第１電極と少なくとも１つの第４電極との間、及び第２電極と少なくとも１つの第４電極との間のそれぞれに順バイアスをかけることにより、第１領域及び第２領域を利得領域として機能させる共に、第３電極と少なくとも１つの第４電極との間に逆バイアスをかけることにより、第３領域を損失領域として機能させる工程を含み、第１領域及び第２領域を利得領域として機能させると共に第３領域を損失領域として機能させている状態において、光導波方向に沿って第２領域を通過した光が獲得する利得は、光導波方向に沿って第１領域を通過した光が獲得する利得よりも大きい。 In the method for driving an optical semiconductor element according to one aspect of the present disclosure, the optical semiconductor element is an optical waveguide configured as a double heterostructure including an active layer and a first clad layer and a second clad layer sandwiching the active layer. And the first electrode provided on the second clad layer, the second electrode provided on the second clad layer on one side of the first electrode in the optical waveguide direction of the optical waveguide, and the optical waveguide of the optical waveguide. At least one facing the first electrode, the second electrode, and the third electrode with the optical waveguide sandwiched between the third electrode provided on the second clad layer on the other side of the first electrode in the optical waveguide direction. A fourth electrode is provided, and the optical waveguide includes an optical waveguide from the surface of the second clad layer to the first clad layer, and optically between the first region under the first electrode and the second region under the second electrode. A first separation region that electrically separates the first region and the second region from each other while being connected to each other, and a first region under the first electrode from the surface of the second clad layer to the first clad layer. A second separation region that electrically separates the first region and the third region from each other while optically connecting to the third region under the third electrode is provided, and the optical semiconductor element is provided with a second separation region. The driving method is to apply a forward bias between the first electrode and at least one fourth electrode, and between the second electrode and at least one fourth electrode, thereby forming the first region and the second region. It includes a step of making the third region function as a loss region by functioning as a gain region and applying a reverse bias between the third electrode and at least one fourth electrode, and gains the first region and the second region. The gain acquired by the light passing through the second region along the optical waveguide direction passes through the first region along the optical waveguide direction in a state where the region functions as a region and the third region functions as a loss region. Greater than the gain that light gains.

この光半導体素子の駆動方法では、第１領域及び第２領域を利得領域として機能させると共に第３領域を損失領域として機能させている状態において、光導波方向に沿って第２領域を通過した光が獲得する利得が、光導波方向に沿って第１領域を通過した光が獲得する利得よりも大きい。これにより、第１領域及び第２領域で発生した光を効果的に増倍させて取り出すことができ、光半導体素子の高出力化を図ることができる。 In this method of driving an optical semiconductor device, light that has passed through a second region along the optical waveguide direction in a state where the first region and the second region function as a gain region and the third region functions as a loss region. The gain obtained by the light is larger than the gain obtained by the light passing through the first region along the optical waveguide direction. As a result, the light generated in the first region and the second region can be effectively multiplied and extracted, and the output of the photosemiconductor element can be increased.

本開示の一側面に係る光半導体素子は、活性層、並びに、活性層を挟む第１クラッド層及び第２クラッド層を含むダブルヘテロ構造として構成された光導波路体と、第２クラッド層上に設けられた第１電極と、光導波路体の光導波方向における第１電極の一方の側において第２クラッド層上に設けられた第２電極と、光導波路体の光導波方向における第１電極の他方の側において第２クラッド層上に設けられた第３電極と、光導波路体を挟んで、第１電極、第２電極及び第３電極と対向する少なくとも１つの第４電極と、を備え、光導波路体には、第２クラッド層の表面から第１クラッド層に至り、第１電極下の第１領域と第２電極下の第２領域との間を光学的に接続しつつ、第１領域と第２領域とを互いに電気的に分離する第１分離領域と、第２クラッド層の表面から第１クラッド層に至り、第１電極下の第１領域と第３電極下の第３領域との間を光学的に接続しつつ、第１領域と第３領域とを互いに電気的に分離する第２分離領域と、が設けられており、光導波方向における第２領域の長さは、光導波方向における第１領域の長さよりも長い。 The optical semiconductor element according to one aspect of the present disclosure includes an active layer, an optical waveguide configured as a double heterostructure including a first clad layer and a second clad layer sandwiching the active layer, and a second clad layer. The first electrode provided, the second electrode provided on the second clad layer on one side of the first electrode in the optical waveguide direction of the optical waveguide, and the first electrode in the optical waveguide direction of the optical waveguide. A third electrode provided on the second clad layer on the other side and at least one fourth electrode facing the first electrode, the second electrode, and the third electrode across the optical waveguide are provided. In the optical waveguide, the surface of the second clad layer reaches the first clad layer, and the first region is optically connected between the first region under the first electrode and the second region under the second electrode. A first separation region that electrically separates the region and the second region from each other, and a first region under the first electrode and a third region under the third electrode from the surface of the second clad layer to the first clad layer. A second separation region that electrically separates the first region and the third region from each other is provided while optically connecting the two regions, and the length of the second region in the optical waveguide direction is It is longer than the length of the first region in the optical waveguide direction.

この光半導体素子では、第１電極と少なくとも１つの第４電極との間、及び第２電極と少なくとも１つの第４電極との間のそれぞれに順バイアスをかけて第１領域及び第２領域を利得領域として機能させると共に第３電極と少なくとも１つの第４電極との間に逆バイアスをかけて第３領域を損失領域として機能させることにより、集光性に優れ且つ広いスペクトルを有する出力光を発生させることができる。更に、第１領域及び第２領域を利得領域として機能させると共に第３領域を損失領域として機能させている状態において第２領域の利得量が第１領域の利得量よりも大きくなるように光半導体素子を駆動することで、第１領域及び第２領域で発生した光を効果的に増倍させて取り出すことができ、光半導体素子の高出力化を図ることができる。また、この光半導体素子では、光導波方向における第２領域の長さが光導波方向における第１領域の長さよりも長いため、第２領域の利得量が第１領域の利得量よりも大きくなるように光半導体素子を駆動することが容易化されている。 In this optical semiconductor device, the first region and the second region are subjected to forward bias by applying a forward bias between the first electrode and at least one fourth electrode and between the second electrode and at least one fourth electrode, respectively. By functioning as a gain region and applying a reverse bias between the third electrode and at least one fourth electrode to make the third region function as a loss region, output light having excellent condensing property and a wide spectrum can be obtained. Can be generated. Further, in a state where the first region and the second region function as the gain region and the third region functions as the loss region, the optical semiconductor so that the gain amount in the second region becomes larger than the gain amount in the first region. By driving the element, the light generated in the first region and the second region can be effectively multiplied and extracted, and the output of the optical semiconductor element can be increased. Further, in this optical semiconductor device, since the length of the second region in the optical waveguide direction is longer than the length of the first region in the optical waveguide direction, the gain amount of the second region is larger than the gain amount of the first region. As described above, it is easy to drive the optical semiconductor element.

本開示の一側面に係る光半導体素子では、活性層は、多重量子井戸構造を有していてもよい。この場合、光半導体素子の一層の高出力化を図ることができる。 In the optical semiconductor device according to one aspect of the present disclosure, the active layer may have a multiple quantum well structure. In this case, it is possible to further increase the output of the optical semiconductor element.

本開示の一側面に係る光半導体素子では、光導波方向は、真っ直ぐに延在する方向であってもよい。この場合、光導波方向が真っ直ぐに延在する方向であるため、良好なビームパターンを有する出力光を得ることができる。 In the optical semiconductor device according to one aspect of the present disclosure, the optical waveguide direction may be a straight extending direction. In this case, since the optical waveguide direction is a straight extending direction, output light having a good beam pattern can be obtained.

本開示の一側面に係る光半導体素子では、第２領域における第１領域とは反対側の端面は、光導波方向に垂直な面であってもよい。この場合、当該端面が光導波方向に垂直な面であるため、一層良好なビームパターンを有する出力光を得ることができる。 In the optical semiconductor device according to one aspect of the present disclosure, the end face of the second region opposite to the first region may be a plane perpendicular to the optical waveguide direction. In this case, since the end face is a plane perpendicular to the optical waveguide direction, output light having a better beam pattern can be obtained.

本開示の一側面に係る光半導体素子では、第２領域における第１領域とは反対側の端面には、低反射層が設けられていてもよい。この場合、出力光の出射面となる当該端面で出力光の一部が反射されることにより光学的なロスが生じるのを抑制することができる。 In the optical semiconductor device according to one aspect of the present disclosure, a low reflection layer may be provided on the end surface of the second region opposite to the first region. In this case, it is possible to suppress the occurrence of optical loss due to the reflection of a part of the output light on the end surface which is the emission surface of the output light.

本開示の一側面に係る光半導体素子では、第１分離領域は、イオン注入領域又は不純物拡散領域によって構成されており、第２分離領域は、イオン注入領域、不純物拡散領域、又は第２クラッド層とは伝導型が異なる半導体領域によって構成されていてもよい。この場合、第１分離領域により、第１領域と第２領域との間の光学的な接続及び電気的な分離を好適に実現することができる。また、第２分離領域により、第１領域と第３領域との間の光学的な接続及び電気的な分離を好適に実現することができる。 In the optical semiconductor device according to one aspect of the present disclosure, the first separation region is composed of an ion implantation region or an impurity diffusion region, and the second separation region is an ion implantation region, an impurity diffusion region, or a second clad layer. It may be composed of semiconductor regions having different conduction types from the above. In this case, the first separation region can suitably realize the optical connection and electrical separation between the first region and the second region. In addition, the second separation region can suitably realize an optical connection and an electrical separation between the first region and the third region.

本開示の一側面に係る光半導体素子は、活性層、並びに、活性層を挟む第１クラッド層及び第２クラッド層を含むダブルヘテロ構造として構成された光導波路体と、第２クラッド層上に設けられた第１電極と、光導波路体の光導波方向における第１電極の一方の側において第２クラッド層上に設けられた第２電極と、光導波路体の光導波方向における第１電極の他方の側において第２クラッド層上に設けられた第３電極と、光導波路体を挟んで、第１電極、第２電極及び第３電極と対向する少なくとも１つの第４電極と、を備え、光導波路体には、第２クラッド層の表面から第１クラッド層に至り、第１電極下の第１領域と第２電極下の第２領域との間を光学的に接続しつつ、第１領域と第２領域とを互いに電気的に分離する第１分離領域と、第２クラッド層の表面から第１クラッド層に至り、第１電極下の第１領域と第３電極下の第３領域との間を光学的に接続しつつ、第１領域と第３領域とを互いに電気的に分離する第２分離領域と、が設けられており、第２領域は、第２クラッド層に垂直な方向から見た場合に、第１領域から遠ざかるほど幅が広くなるフレア形状をなしている。 The optical semiconductor element according to one aspect of the present disclosure includes an active layer, an optical waveguide configured as a double heterostructure including a first clad layer and a second clad layer sandwiching the active layer, and a second clad layer. The first electrode provided, the second electrode provided on the second clad layer on one side of the first electrode in the optical waveguide direction of the optical waveguide, and the first electrode in the optical waveguide direction of the optical waveguide. A third electrode provided on the second clad layer on the other side and at least one fourth electrode facing the first electrode, the second electrode, and the third electrode across the optical waveguide are provided. In the optical waveguide, the surface of the second clad layer reaches the first clad layer, and the first region is optically connected between the first region under the first electrode and the second region under the second electrode. A first separation region that electrically separates the region and the second region from each other, and a first region under the first electrode and a third region under the third electrode from the surface of the second clad layer to the first clad layer. A second separation region is provided which electrically separates the first region and the third region from each other while optically connecting the two regions, and the second region is perpendicular to the second clad layer. When viewed from the direction, it has a flare shape in which the width becomes wider as the distance from the first region increases.

この光半導体素子では、第１電極と少なくとも１つの第４電極との間、及び第２電極と少なくとも１つの第４電極との間のそれぞれに順バイアスをかけて第１領域及び第２領域を利得領域として機能させると共に第３電極と少なくとも１つの第４電極との間に逆バイアスをかけて第３領域を損失領域として機能させることにより、集光性に優れ且つ広いスペクトルを有する出力光を発生させることができる。更に、第１領域及び第２領域を利得領域として機能させると共に第３領域を損失領域として機能させている状態において第２領域の利得量が第１領域の利得量よりも大きくなるように光半導体素子を駆動することで、第１領域及び第２領域で発生した光を効果的に増倍させて取り出すことができ、光半導体素子の高出力化を図ることができる。また、この光半導体素子では、第２領域がフレア形状をなしており、第２領域において光が広がりながら増幅されるため、広いビームパターンを有する出力光を得ることができる。更に、注入される電流の密度を低減して利得飽和の発生を抑制することができると共に、熱の影響を低減することができるため、光半導体素子の一層の高出力化を図ることができる。 In this optical semiconductor device, the first region and the second region are subjected to forward bias by applying a forward bias between the first electrode and at least one fourth electrode and between the second electrode and at least one fourth electrode, respectively. By functioning as a gain region and applying a reverse bias between the third electrode and at least one fourth electrode to make the third region function as a loss region, output light having excellent condensing property and a wide spectrum can be obtained. Can be generated. Further, in a state where the first region and the second region function as the gain region and the third region functions as the loss region, the optical semiconductor so that the gain amount in the second region becomes larger than the gain amount in the first region. By driving the element, the light generated in the first region and the second region can be effectively multiplied and extracted, and the output of the optical semiconductor element can be increased. Further, in this optical semiconductor element, the second region has a flare shape, and the light is amplified while spreading in the second region, so that it is possible to obtain output light having a wide beam pattern. Further, the density of the injected current can be reduced to suppress the occurrence of gain saturation, and the influence of heat can be reduced, so that the output of the optical semiconductor element can be further increased.

本開示の一側面によれば、光半導体素子の高出力化を図ることができる光半導体素子の駆動方法、及びそのような駆動方法に適した光半導体素子を提供することできる。 According to one aspect of the present disclosure, it is possible to provide a method for driving an optical semiconductor device capable of increasing the output of the optical semiconductor element, and an optical semiconductor element suitable for such a driving method.

実施形態に係る光半導体素子を示す斜視図である。It is a perspective view which shows the optical semiconductor element which concerns on embodiment. 図１に示されるII−II線に沿っての断面図である。It is sectional drawing along the line II-II shown in FIG. （ａ）及び（ｂ）は、実施形態に係る光半導体素子の駆動方法の作用効果を説明するための概念図である。(A) and (b) are conceptual diagrams for explaining the action and effect of the driving method of the optical semiconductor element according to the embodiment. 活性層の井戸数と電流及び利得との関係を示す概念図である。It is a conceptual diagram which shows the relationship between the number of wells of an active layer, current and gain. 第１変形例の光半導体素子の斜視図である。It is a perspective view of the optical semiconductor element of the 1st modification. 第２変形例の光半導体素子の斜視図である。It is a perspective view of the optical semiconductor element of the 2nd modification. 第３変形例の光半導体素子の斜視図である。It is a perspective view of the optical semiconductor element of the 3rd modification. 第４変形例の光半導体素子の斜視図である。It is a perspective view of the optical semiconductor element of the 4th modification.

以下、本開示の実施形態について、図面を参照して詳細に説明する。なお、各図において同一又は相当部分には同一符号を付し、重複する部分を省略する。
［光半導体素子の構成］Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In each figure, the same or corresponding parts are designated by the same reference numerals, and overlapping parts are omitted.
[Structure of optical semiconductor device]

図１及び図２に示されるように、光半導体素子１は、基板２と、光導波路体１０と、を備えている。光導波路体１０は、基板２の表面２ａにバッファ層３を介して設けられている。基板２及びバッファ層３は、それぞれ、例えばｎ−型ＧａＡｓからなる。基板２は、例えば、１．５〜６．０ｍｍ程度の長さ、３００〜１０００μｍ程度の幅、及び１００〜６００μｍ程度の厚さを有する長方形板状を呈している。以下、基板２の長さ方向をＸ軸方向、基板２の幅方向をＹ軸方向、基板２の厚さ方向をＺ軸方向という。As shown in FIGS. 1 and 2, the optical semiconductor element 1 includes a substrate 2 and an optical waveguide 10. The optical waveguide 10 is provided on the surface 2a of the substrate 2 via the buffer layer 3. Substrate 2 and the buffer layer 3, respectively, for example, the n - -type GaAs. The substrate 2 has, for example, a rectangular plate having a length of about 1.5 to 6.0 mm, a width of about 300 to 1000 μm, and a thickness of about 100 to 600 μm. Hereinafter, the length direction of the substrate 2 is referred to as the X-axis direction, the width direction of the substrate 2 is referred to as the Y-axis direction, and the thickness direction of the substrate 2 is referred to as the Z-axis direction.

光導波路体１０は、第１クラッド層１１、第１ガイド層１２、活性層１３、第２ガイド層１４、第２クラッド層１５及びコンタクト層１６がこの順序でバッファ層３上に積層されることにより構成されている。光導波路体１０は、活性層１３、並びに、活性層１３を挟む第１クラッド層１１及び第２クラッド層１５を含むダブルヘテロ構造として構成されている。第１クラッド層１１は、例えばｎ−型Ａｌ０．３Ｇａ０．７Ａｓからなる。第１ガイド層１２は、例えばノンドープＡｌ０．２５Ｇａ０．７５Ａｓからなる。活性層１３は、例えばＧａＡｓ／Ａｌ０．２Ｇａ０．８Ａｓ多重量子井戸構造を有している。第２ガイド層１４は、例えばノンドープＡｌ０．２５Ｇａ０．７５Ａｓからなる。第２クラッド層１５は、例えばｐ−型Ａｌ０．３Ｇａ０．７Ａｓからなる。コンタクト層１６は、例えばｐ＋型ＧａＡｓからなる。In the optical waveguide 10, the first clad layer 11, the first guide layer 12, the active layer 13, the second guide layer 14, the second clad layer 15, and the contact layer 16 are laminated on the buffer layer 3 in this order. It is composed of. The optical waveguide 10 is configured as a double heterostructure including an active layer 13, a first clad layer 11 and a second clad layer 15 sandwiching the active layer 13. The first clad layer 11 is made of, for example, n − type Al 0.3 Ga 0.7 As. The first guide layer 12 is made of, for example, non-doped Al 0.25 Ga 0.75 As. The active layer 13 has, for example, a GaAs / Al 0.2 Ga 0.8 As multiplex quantum well structure. The second guide layer 14 is made of, for example, non-doped Al 0.25 Ga 0.75 As. The second clad layer 15 is made of, for example, p - type Al 0.3 Ga 0.7 As. The contact layer 16 is made of, for example, p + type GaAs.

光導波路体１０は、基板２上においてリッジ構造として構成されている。光導波路体１０の光導波方向Ａは、Ｘ軸方向と平行に真っ直ぐに延在する方向である。一例として、光導波路体１０の幅は、第１クラッド層１１におけるバッファ層３側の部分を除いて、基板２及びバッファ層３の幅よりも小さくされている。リッジ構造部分において、光導波路体１０は、例えば、１．５〜６．０ｍｍ程度の長さ、２〜５０μｍ程度の幅、及び１〜２μｍ程度の厚さを有する長方形板状（層状）を呈している。なお、光導波方向Ａとは、光を閉じ込めるための筒状の領域（リッジ構造では、第１クラッド層１１、第２クラッド層１５及び空気層によって形成される領域）の中心線に沿った方向、換言すれば、当該筒状の領域によって囲まれた活性層１３が延在する方向である。 The optical waveguide 10 is configured as a ridge structure on the substrate 2. The optical waveguide direction A of the optical waveguide 10 is a direction that extends straight in parallel with the X-axis direction. As an example, the width of the optical waveguide 10 is smaller than the width of the substrate 2 and the buffer layer 3 except for the portion of the first clad layer 11 on the buffer layer 3 side. In the ridge structure portion, the optical waveguide 10 exhibits, for example, a rectangular plate shape (layered shape) having a length of about 1.5 to 6.0 mm, a width of about 2 to 50 μm, and a thickness of about 1 to 2 μm. ing. The optical waveguide direction A is a direction along the center line of a tubular region for confining light (in the ridge structure, a region formed by the first clad layer 11, the second clad layer 15, and the air layer). In other words, the active layer 13 surrounded by the tubular region extends in the direction of extension.

光半導体素子１は、第１電極５と、第２電極６と、第３電極７と、第４電極８と、を更に備えている。第１電極５、第２電極６及び第３電極７は、それぞれ、コンタクト層１６を介して第２クラッド層１５上に設けられており、それぞれ、コンタクト層１６を介して直下の第２クラッド層１５と電気的に接続されている。第４電極８は、基板２の裏面２ｂに設けられており、基板２と電気的に接続されている。第１電極５、第２電極６、第３電極７及び第４電極８は、それぞれ、例えばＡｕ系の金属からなる。 The optical semiconductor element 1 further includes a first electrode 5, a second electrode 6, a third electrode 7, and a fourth electrode 8. The first electrode 5, the second electrode 6, and the third electrode 7 are each provided on the second clad layer 15 via the contact layer 16, and each of them is a second clad layer directly below the second clad layer 15 via the contact layer 16. It is electrically connected to 15. The fourth electrode 8 is provided on the back surface 2b of the substrate 2 and is electrically connected to the substrate 2. The first electrode 5, the second electrode 6, the third electrode 7, and the fourth electrode 8 are each made of, for example, an Au-based metal.

第１電極５、第２電極６及び第３電極７は、光導波方向Ａに沿って並んでいる。第２電極６は、光導波方向Ａにおける第１電極５の一方の側に位置している。第３電極７は、光導波方向Ａにおける第１電極５の他方の側に位置している。第４電極８は、基板２、バッファ層３及び光導波路体１０を挟んで、第１電極５、第２電極６及び第３電極７と対向している。 The first electrode 5, the second electrode 6, and the third electrode 7 are arranged along the optical waveguide direction A. The second electrode 6 is located on one side of the first electrode 5 in the optical waveguide direction A. The third electrode 7 is located on the other side of the first electrode 5 in the optical waveguide direction A. The fourth electrode 8 faces the first electrode 5, the second electrode 6, and the third electrode 7 with the substrate 2, the buffer layer 3, and the optical waveguide 10 interposed therebetween.

第１電極５と第２電極６との間には、Ｙ軸方向に延在する隙間Ｓ１が形成されており、コンタクト層１６は、隙間Ｓ１に沿って物理的に分離されている。第１電極５と第３電極７との間には、Ｙ軸方向に延在する隙間Ｓ２が形成されており、コンタクト層１６は、隙間Ｓ２に沿って物理的に分離されている。つまり、第１電極５、第２電極６及び第３電極７は、光導波路体１０の上面（第４電極８とは反対側の表面）の全体を覆うように形成された金属層が隙間Ｓ１及び隙間Ｓ２のそれぞれを介して分離されることにより、形成されている。換言すれば、第１電極５、第２電極６及び第３電極７は、光導波路体１０の上面のうち隙間Ｓ１及び隙間Ｓ２を除く領域の全体に渡るように、形成されている。また、コンタクト層１６は、第１電極５、第２電極６及び第３電極７のそれぞれの直下の部分ごとに、各隙間Ｓ１，Ｓ２を介して分離されている。 A gap S1 extending in the Y-axis direction is formed between the first electrode 5 and the second electrode 6, and the contact layer 16 is physically separated along the gap S1. A gap S2 extending in the Y-axis direction is formed between the first electrode 5 and the third electrode 7, and the contact layer 16 is physically separated along the gap S2. That is, in the first electrode 5, the second electrode 6, and the third electrode 7, a metal layer formed so as to cover the entire upper surface of the optical waveguide 10 (the surface opposite to the fourth electrode 8) has a gap S1. It is formed by being separated through each of the gap S2 and the gap S2. In other words, the first electrode 5, the second electrode 6, and the third electrode 7 are formed so as to cover the entire region of the upper surface of the optical waveguide 10 except for the gap S1 and the gap S2. Further, the contact layer 16 is separated from each of the portions directly below the first electrode 5, the second electrode 6, and the third electrode 7 via the gaps S1 and S2.

光導波路体１０には、第１分離領域１７と、第２分離領域１８と、が設けられている。第１分離領域１７は、光導波路体１０において、第１電極５下の第１領域１０１と第２電極６下の第２領域１０２との間を光学的に接続しつつ、第１領域１０１と第２領域１０２とを互いに電気的に分離している。つまり、活性層１３内を進行する光は、第１分離領域１７を介して第１領域１０１と第２領域１０２との間を移動することができる。第２分離領域１８は、光導波路体１０において、第１電極５下の第１領域１０１と第３電極７下の第３領域１０３との間を光学的に接続しつつ、第１領域１０１と第３領域１０３とを互いに電気的に分離している。つまり、活性層１３内を進行する光は、第２分離領域１８を介して第１領域１０１と第３領域１０３との間を移動することができる。 The optical waveguide 10 is provided with a first separation region 17 and a second separation region 18. The first separation region 17 connects with the first region 101 while optically connecting the first region 101 under the first electrode 5 and the second region 102 under the second electrode 6 in the optical waveguide 10. The second region 102 is electrically separated from each other. That is, the light traveling in the active layer 13 can move between the first region 101 and the second region 102 via the first separation region 17. The second separation region 18 is connected to the first region 101 in the optical waveguide 10 while optically connecting the first region 101 under the first electrode 5 and the third region 103 under the third electrode 7. The third region 103 is electrically separated from each other. That is, the light traveling in the active layer 13 can move between the first region 101 and the third region 103 via the second separation region 18.

第１領域１０１は、Ｚ軸方向から見た場合に光導波路体１０において第１電極５と重なる領域であって、光導波路体１０のうち第１電極５と第４電極８とで挟まれた領域である。第２領域１０２は、Ｚ軸方向から見た場合に光導波路体１０において第２電極６と重なる領域であって、光導波路体１０のうち第２電極６と第４電極８とで挟まれた領域である。第３領域１０３は、Ｚ軸方向から見た場合に光導波路体１０において第３電極７と重なる領域であって、光導波路体１０のうち第３電極７と第４電極８とで挟まれた領域である。 The first region 101 is a region that overlaps with the first electrode 5 in the optical waveguide 10 when viewed from the Z-axis direction, and is sandwiched between the first electrode 5 and the fourth electrode 8 of the optical waveguide 10. It is an area. The second region 102 is a region that overlaps with the second electrode 6 in the optical waveguide 10 when viewed from the Z-axis direction, and is sandwiched between the second electrode 6 and the fourth electrode 8 of the optical waveguide 10. It is an area. The third region 103 is a region that overlaps with the third electrode 7 in the optical waveguide 10 when viewed from the Z-axis direction, and is sandwiched between the third electrode 7 and the fourth electrode 8 of the optical waveguide 10. It is an area.

第１分離領域１７は、隙間Ｓ１に対応する位置（光導波方向Ａにおける位置）において、光導波方向Ａに垂直な面に沿うように、光導波路体１０に形成されている。第２分離領域１８は、隙間Ｓ２に対応する位置（光導波方向Ａにおける位置）において、光導波方向Ａに垂直な面に沿うように、光導波路体１０に形成されている。第１分離領域１７は、Ｚ軸方向においては、第２クラッド層１５の表面１５ａから第１クラッド層１１に至っており、Ｙ軸方向においては、光導波路体１０の両側面に至っている。第２分離領域１８は、Ｚ軸方向においては、第２クラッド層１５の表面１５ａから第１クラッド層１１に至っており、Ｙ軸方向においては、光導波路体１０の両側面に至っている。 The first separation region 17 is formed in the optical waveguide 10 so as to be along a plane perpendicular to the optical waveguide direction A at a position corresponding to the gap S1 (position in the optical waveguide direction A). The second separation region 18 is formed in the optical waveguide 10 so as to be along a plane perpendicular to the optical waveguide direction A at a position corresponding to the gap S2 (position in the optical waveguide direction A). The first separation region 17 reaches from the surface 15a of the second clad layer 15 to the first clad layer 11 in the Z-axis direction, and reaches both side surfaces of the optical waveguide 10 in the Y-axis direction. The second separation region 18 reaches from the surface 15a of the second clad layer 15 to the first clad layer 11 in the Z-axis direction, and reaches both side surfaces of the optical waveguide 10 in the Y-axis direction.

本実施形態では、第１分離領域１７及び第２分離領域１８のそれぞれは、イオン注入領域によって構成されている。イオン注入領域は、例えば、イオン注入により、プロトン、ボロン、炭素イオン、酸素イオン、窒素イオン等が光導波路体１０に添加されることによって形成されている。第１分離領域１７及び第２分離領域１８のそれぞれは、不純物拡散領域によって構成されてもよい。不純物拡散領域には、不純物ドーピングによって深い準位が形成される。不純物拡散領域は、例えば、熱拡散又はイオン注入により、鉄、酸素、クロム等が光導波路体１０にドープされることによって形成される。第２分離領域１８は、第２クラッド層１５とは伝導型が異なる半導体領域によって構成されてもよい。例えば、この例では第２クラッド層１５がｐ型の半導体であるので、第２分離領域１８は、ｎ型の半導体領域によって構成されてもよい。第１分離領域１７及び第２分離領域１８は、互いに異なる種類の領域によって構成されてもよい。例えば、第１分離領域１７及び第２分離領域１８の一方がイオン注入領域によって構成され、他方が不純物拡散領域によって構成されてもよい。いずれの場合においても、第１分離領域１７及び第２分離領域１８は、空隙ではなく、固体からなる物理的な領域によって構成される。 In the present embodiment, each of the first separation region 17 and the second separation region 18 is composed of an ion implantation region. The ion implantation region is formed by, for example, adding protons, boron, carbon ions, oxygen ions, nitrogen ions, etc. to the optical waveguide 10 by ion implantation. Each of the first separation region 17 and the second separation region 18 may be composed of an impurity diffusion region. Deep levels are formed in the impurity diffusion region by impurity doping. The impurity diffusion region is formed by doping the optical waveguide 10 with iron, oxygen, chromium, etc., for example, by thermal diffusion or ion implantation. The second separation region 18 may be composed of a semiconductor region having a conduction type different from that of the second clad layer 15. For example, in this example, since the second clad layer 15 is a p-type semiconductor, the second separation region 18 may be composed of an n-type semiconductor region. The first separation region 17 and the second separation region 18 may be composed of regions of different types from each other. For example, one of the first separation region 17 and the second separation region 18 may be composed of an ion implantation region, and the other may be composed of an impurity diffusion region. In either case, the first separation region 17 and the second separation region 18 are composed of physical regions made of solids, not voids.

第１分離領域１７及び第２分離領域１８のそれぞれの厚さ（光導波方向Ａにおける幅）は、１０〜５０μｍ程度である。光導波方向Ａにおける第１領域１０１の長さは、光導波方向Ａにおける第２領域１０２及び第３領域１０３のそれぞれの長さよりも長い。光導波方向Ａにおける第２領域１０２の長さは、光導波方向Ａにおける第３領域１０３の長さよりも長い。光導波方向Ａにおける第１領域１０１の長さＬ１は、例えば０．５〜３．０ｍｍ程度である。光導波方向Ａにおける第２領域１０２の長さＬ２は、例えば０．２〜０．５ｍｍ程度である。光導波方向Ａにおける第３領域１０３の長さＬ３は、例えば０．８〜２．０ｍｍ程度である。本実施形態では、一例として、長さＬ１は１ｍｍであり、長さＬ２は０．５ｍｍであり、長さＬ３は０．３ｍｍである。第１領域１０１、第２領域１０２及び第３領域１０３の幅（Ｙ軸方向における長さ）は、互いに同一であり、例えば２〜５０μｍ程度である。 The thickness (width in the optical waveguide direction A) of each of the first separation region 17 and the second separation region 18 is about 10 to 50 μm. The length of the first region 101 in the optical waveguide direction A is longer than the length of each of the second region 102 and the third region 103 in the optical waveguide direction A. The length of the second region 102 in the optical waveguide direction A is longer than the length of the third region 103 in the optical waveguide direction A. The length L1 of the first region 101 in the optical waveguide direction A is, for example, about 0.5 to 3.0 mm. The length L2 of the second region 102 in the optical waveguide direction A is, for example, about 0.2 to 0.5 mm. The length L3 of the third region 103 in the optical waveguide direction A is, for example, about 0.8 to 2.0 mm. In the present embodiment, as an example, the length L1 is 1 mm, the length L2 is 0.5 mm, and the length L3 is 0.3 mm. The widths (lengths in the Y-axis direction) of the first region 101, the second region 102, and the third region 103 are the same as each other, and are, for example, about 2 to 50 μm.

第２領域１０２における第１領域１０１とは反対側の端面１０２ａには、低反射層９が設けられている。端面１０２ａは、出力光Ｌの出射面であり、光導波方向Ａに垂直な面である。低反射層９は、端面１０２ａで出力光Ｌの一部が反射されて光導波路体１０内に戻ることを抑制する。低反射層９は、例えば、ＡＲコーティングと称される誘電体多層膜である。なお、図１では、低反射層９の図示が省略されている。
［光半導体素子の駆動方法］A low reflection layer 9 is provided on the end surface 102a of the second region 102 opposite to the first region 101. The end surface 102a is an exit surface of the output light L and is a surface perpendicular to the optical waveguide direction A. The low reflection layer 9 suppresses that a part of the output light L is reflected by the end face 102a and returns to the inside of the optical waveguide 10. The low reflection layer 9 is, for example, a dielectric multilayer film called AR coating. In addition, in FIG. 1, the illustration of the low reflection layer 9 is omitted.
[How to drive optical semiconductor devices]

本実施形態に係る光半導体素子の駆動方法は、第１電極５と第４電極８との間、及び第２電極６と第４電極８との間のそれぞれに順バイアスをかけることにより、第１領域１０１及び第２領域１０２を利得領域として機能させる共に、第３電極７と第４電極８との間に逆バイアスをかけることにより、第３領域１０３を損失領域として機能させる工程を含む。 The method for driving the optical semiconductor element according to the present embodiment is to apply a forward bias between the first electrode 5 and the fourth electrode 8 and between the second electrode 6 and the fourth electrode 8, respectively. A step of making the first region 101 and the second region 102 function as a gain region and causing the third region 103 to function as a loss region by applying a reverse bias between the third electrode 7 and the fourth electrode 8 is included.

具体的には、第４電極８を接地電位として第１電極５に正電圧（例えば＋１．５〜＋２Ｖ）が印加される。これにより、第１領域１０１が利得領域として機能し、当該利得領域がレーザダイオードとして光を発振させようとする。また、第４電極８を接地電位として第２電極６に正電圧（例えば＋１．５〜＋３Ｖ）が印加される。これにより、第２領域１０２が利得領域として機能し、当該利得領域がレーザダイオードとして光を発振させようとする。更に、第４電極８を接地電位として第３電極７に負電圧（例えば−５Ｖ）が印加される。これにより、第２領域１０２が損失領域として機能し、当該損失領域がレーザダイオードとしての光発振を止めようとする。したがって、第１領域１０１、第２領域１０２及び第３領域１０３は、ＳＬＤとして機能し、集光性に優れ且つ広いスペクトルを有する出力光Ｌを発生させる。本実施形態では、活性層１３が多重量子井戸構造を有しており、第１領域１０１及び第２領域１０２を利得領域として機能させると共に第３領域１０３を損失領域として機能させている状態では、活性層１３における第１準位から基底準位への遷移によって光が発生する。 Specifically, a positive voltage (for example, +1.5 to + 2V) is applied to the first electrode 5 with the fourth electrode 8 as the ground potential. As a result, the first region 101 functions as a gain region, and the gain region attempts to oscillate light as a laser diode. Further, a positive voltage (for example, +1.5 to + 3V) is applied to the second electrode 6 with the fourth electrode 8 as the ground potential. As a result, the second region 102 functions as a gain region, and the gain region attempts to oscillate light as a laser diode. Further, a negative voltage (for example, −5 V) is applied to the third electrode 7 with the fourth electrode 8 as the ground potential. As a result, the second region 102 functions as a loss region, and the loss region attempts to stop optical oscillation as a laser diode. Therefore, the first region 101, the second region 102, and the third region 103 function as SLDs to generate output light L having excellent light-collecting properties and a wide spectrum. In the present embodiment, in a state where the active layer 13 has a multiple quantum well structure, the first region 101 and the second region 102 function as a gain region and the third region 103 functions as a loss region. Light is generated by the transition from the first level to the basal level in the active layer 13.

本実施形態に係る光半導体素子の駆動方法では、第１領域１０１及び第２領域１０２を利得領域として機能させると共に第３領域１０３を損失領域として機能させている状態において、第２領域１０２を光が単位距離進行する間に獲得する利得に対応する値と、光導波方向Ａにおける第２領域１０２の長さＬ２との積が、第１領域１０１を光が単位距離進行する間に獲得する利得に対応する値と、光導波方向Ａにおける第１領域１０１の長さＬ１との積よりも大きい。以下、或る領域を光が単位距離進行する間に獲得する利得に対応する値を利得係数ｇといい、利得係数ｇと光導波方向Ａにおける当該領域の長さとの積を利得量ｇＬという。活性層１３における閉じ込め係数をΓとすると、光導波方向Ａに沿って当該領域を通過した光が獲得する利得Ｇは、式Ｇ＝ｅｘｐ（ΓｇＬ）により求められる。利得係数ｇは、当該領域の吸収係数に−１を乗じた値とみなすことができる。利得量ｇＬは、光導波方向Ａに沿って当該領域を光が通過した場合に当該光が獲得する利得に対応する。つまり、第１領域１０１及び第２領域１０２を利得領域として機能させると共に第３領域１０３を損失領域として機能させている状態においては、光導波方向Ａに沿って第２領域１０２を通過した光が獲得する利得が、光導波方向Ａに沿って第１領域１０１を通過した光が獲得する利得よりも大きい。 In the method for driving an optical semiconductor element according to the present embodiment, in a state where the first region 101 and the second region 102 function as a gain region and the third region 103 functions as a loss region, the second region 102 is illuminated. The product of the value corresponding to the gain obtained while traveling a unit distance and the length L2 of the second region 102 in the optical waveguide direction A is the gain obtained while the light travels a unit distance in the first region 101. It is larger than the product of the value corresponding to and the length L1 of the first region 101 in the optical waveguide direction A. Hereinafter, the value corresponding to the gain acquired while the light travels a certain region by a unit distance is referred to as a gain coefficient g, and the product of the gain coefficient g and the length of the region in the optical waveguide direction A is referred to as a gain amount gL. Assuming that the confinement coefficient in the active layer 13 is Γ, the gain G acquired by the light passing through the region along the optical waveguide direction A is obtained by the equation G = exp (ΓgL). The gain coefficient g can be regarded as a value obtained by multiplying the absorption coefficient of the region by -1. The gain amount gL corresponds to the gain acquired by the light when the light passes through the region along the optical waveguide direction A. That is, in a state where the first region 101 and the second region 102 function as the gain region and the third region 103 functions as the loss region, the light passing through the second region 102 along the optical waveguide direction A The gain to be acquired is larger than the gain acquired by the light passing through the first region 101 along the optical waveguide direction A.

下記表１、表２及び表３には、第１領域１０１及び第２領域１０２への注入電流を変化させた場合における出力光Ｌの強度の測定結果が示されている。表１〜表３に示される例では、利得係数ｇに代わる量として電流密度が用いられ、利得量ｇＬに代わる量として利得量（Ａ／ｃｍ）が用いられている。これは、利得係数ｇが電流密度の増加に従って増加するためである。利得係数ｇは上位準位のキャリア密度に比例する。すなわち、利得係数ｇと電流密度とは、比例するとみなすことができる。或る領域の電流密度は、当該領域への注入電流をＺ軸方向から見た場合の当該領域の面積で除した値である。上述したとおり、光導波方向Ａにおける第１領域１０１の長さＬ１は１ｍｍであり、光導波方向Ａにおける第２領域１０２の長さＬ２は０．５ｍｍである。第１領域１０１及び第２領域１０２の幅は、０．０２ｍｍである。

Figure 2019111804
Figure 2019111804
Figure 2019111804
 Tables 1, 2 and 3 below show the measurement results of the intensity of the output light L when the injection currents into the first region 101 and the second region 102 are changed. In the examples shown in Tables 1 to 3, the current density is used as an alternative amount to the gain coefficient g, and the gain amount (A / cm) is used as an alternative amount to the gain amount gL. This is because the gain coefficient g increases as the current density increases. The gain coefficient g is proportional to the carrier density of the upper level. That is, the gain coefficient g and the current density can be regarded as proportional. The current density in a certain region is a value obtained by dividing the injection current into the region by the area of the region when viewed from the Z-axis direction. As described above, the length L1 of the first region 101 in the optical waveguide direction A is 1 mm, and the length L2 of the second region 102 in the optical waveguide direction A is 0.5 mm. The width of the first region 101 and the second region 102 is 0.02 mm.
Figure 2019111804
Figure 2019111804
Figure 2019111804

表１〜表３から、第１領域１０１への注入電流と第２領域１０２への注入電流との和が等しい場合同士を比較すると、第２領域１０２の利得量ｇＬが第１領域１０１の利得量ｇＬよりも大きい場合の方が、第２領域１０２の利得量ｇＬが第１領域１０１の利得量ｇＬよりも小さい場合よりも、出力光Ｌの強度が高かったことが分かる。例えば、第１領域１０１への注入電流と第２領域１０２への注入電流との和が３００ｍＡである場合を比較すると、第２領域１０２への注入電流が２００ｍＡであり、第１領域１０１への注入電流が１００ｍＡであり、第２領域１０２における利得量ｇＬが１００Ａ／ｃｍであり、第１領域１０１における利得量ｇＬが５０Ａ／ｃｍである場合、出力光Ｌの強度が−４１ｄＢであるのに対し、第２領域１０２への注入電流が１００ｍＡであり、第１領域１０１への注入電流が２００ｍＡであり、第２領域１０２における利得量ｇＬが５０Ａ／ｃｍであり、第１領域１０１における利得量ｇＬが１００Ａ／ｃｍである場合には、出力光Ｌの強度は−５３ｄＢである。 Comparing the cases where the sum of the injection current into the first region 101 and the injection current into the second region 102 is equal from Tables 1 to 3, the gain amount gL of the second region 102 is the gain of the first region 101. It can be seen that the intensity of the output light L was higher when the amount gL was larger than when the gain amount gL in the second region 102 was smaller than the gain amount gL in the first region 101. For example, comparing the case where the sum of the injection current into the first region 101 and the injection current into the second region 102 is 300 mA, the injection current into the second region 102 is 200 mA, and the injection current into the first region 101 is When the injection current is 100 mA, the gain amount gL in the second region 102 is 100 A / cm, and the gain amount gL in the first region 101 is 50 A / cm, the intensity of the output light L is −41 dB. On the other hand, the injection current into the second region 102 is 100 mA, the injection current into the first region 101 is 200 mA, the gain amount gL in the second region 102 is 50 A / cm, and the gain amount in the first region 101. When gL is 100 A / cm, the intensity of the output light L is −53 dB.

このように、第１領域１０１及び第２領域１０２を利得領域として機能させると共に第３領域１０３を損失領域として機能させている状態において、第２領域１０２を光が単位距離進行する間に獲得する利得に対応する値（利得係数ｇ）と光導波方向Ａにおける第２領域１０２の長さＬ２との積（利得量ｇＬ）が、第１領域１０１を光が単位距離進行する間に獲得する利得に対応する値（利得係数ｇ）と光導波方向Ａにおける第１領域１０１の長さＬ１との積（利得量ｇＬ）よりも大きいことにより、第１領域１０１及び第２領域１０２で発生した光を効果的に増倍させて取り出すことができ、光半導体素子１の高出力化を図ることができる。 In this way, in a state where the first region 101 and the second region 102 function as the gain region and the third region 103 functions as the loss region, the second region 102 is acquired while the light travels a unit distance. The product (gain amount gL) of the value corresponding to the gain (gain coefficient g) and the length L2 of the second region 102 in the photomultiplier direction A is the gain obtained while the light travels a unit distance in the first region 101. The light generated in the first region 101 and the second region 102 is larger than the product (gain amount gL) of the value corresponding to (gain coefficient g) and the length L1 of the first region 101 in the photomultiplier direction A. Can be effectively multiplied and taken out, and the output of the optical semiconductor element 1 can be increased.

この点について、図３（ａ）及び図３（ｂ）を参照しつつ更に説明する。図３（ａ）は、本実施形態に係る光半導体素子の駆動方法とは異なり、第２領域１０２における利得量ｇＬが第１領域１０１における利得量ｇＬよりも小さい場合を示している。図３（ｂ）は、本実施形態に係る光半導体素子の駆動方法のように、第２領域１０２における利得量ｇＬが第１領域１０１における利得量ｇＬよりも大きい場合を示している。図３（ａ）及び図３（ｂ）に示されるように、光半導体素子１から取り出せる光は、出射面側に向かう光のみであり、出射面とは反対側に向かう光は、損失領域として機能する第３領域１０３により吸収される。 This point will be further described with reference to FIGS. 3 (a) and 3 (b). FIG. 3A shows a case where the gain amount gL in the second region 102 is smaller than the gain amount gL in the first region 101, unlike the method of driving the optical semiconductor element according to the present embodiment. FIG. 3B shows a case where the gain amount gL in the second region 102 is larger than the gain amount gL in the first region 101, as in the method of driving the optical semiconductor element according to the present embodiment. As shown in FIGS. 3 (a) and 3 (b), the light that can be extracted from the optical semiconductor element 1 is only the light that goes toward the exit surface side, and the light that goes toward the side opposite to the exit surface is used as a loss region. It is absorbed by the functioning third region 103.

図３（ａ）に示されるように、出射端側に利得量ｇＬが比較的小さい領域が配置されている場合、第２領域１０２で発生した光を効果的に増倍することができず、出力光Ｌの強度を高めることは難しい。これに対し、図３（ｂ）に示されるように、本実施形態に係る光半導体素子の駆動方法では、出射面側に利得量ｇＬが比較的大きい領域が配置されているため、第１領域１０１及び第２領域１０２の双方で発生した光を効果的に増倍させて取り出すことができる。 As shown in FIG. 3A, when a region having a relatively small gain amount gL is arranged on the emission end side, the light generated in the second region 102 cannot be effectively multiplied. It is difficult to increase the intensity of the output light L. On the other hand, as shown in FIG. 3B, in the method of driving the photosemiconductor element according to the present embodiment, a region having a relatively large gain amount gL is arranged on the exit surface side, so that the first region The light generated in both the 101 and the second region 102 can be effectively multiplied and extracted.

本実施形態に係る光半導体素子の駆動方法では、活性層１３が、多重量子井戸構造を有している。これにより、光半導体素子１の一層の高出力化を図ることができる。 In the method for driving an optical semiconductor device according to the present embodiment, the active layer 13 has a multiple quantum well structure. As a result, the output of the optical semiconductor element 1 can be further increased.

この点について、図４を参照しつつ更に説明する。図４は、井戸数ｎが１，２，３，１０のそれぞれの場合における電流と利得との関係を示している。図４に示されるように、井戸数ｎが多くなるほど、吸収域Ｒが広くなり、利得を発生させるのに大きな電流が必要となる。一方、井戸数ｎが多くなるほど、利得発生時の立ち上がり量Ｃが大きくなる。したがって、本実施形態に係る光半導体素子の駆動方法のように活性層１３が多重量子井戸構造を有していることにより、吸収域Ｒの利用効率を向上することができると共に、立ち上がり量Ｃを増加させて発光効率を向上することができる。その結果、光半導体素子１の一層の高出力化を図ることができる。 This point will be further described with reference to FIG. FIG. 4 shows the relationship between the current and the gain when the number of wells n is 1, 2, 3, and 10, respectively. As shown in FIG. 4, as the number of wells n increases, the absorption region R becomes wider, and a large current is required to generate a gain. On the other hand, as the number of wells n increases, the rising amount C at the time of gain generation increases. Therefore, since the active layer 13 has the multiple quantum well structure as in the method for driving the optical semiconductor element according to the present embodiment, the utilization efficiency of the absorption region R can be improved and the rising amount C can be increased. Luminous efficiency can be improved by increasing the amount. As a result, it is possible to further increase the output of the optical semiconductor element 1.

本実施形態に係る光半導体素子の駆動方法において、第１領域１０１及び第２領域１０２を利得領域として機能させると共に第３領域１０３を損失領域として機能させている状態では、活性層１３における第１準位から基底準位への遷移によって光が発生する。これにより、光半導体素子１の高出力化が好適に図られる。 In the method for driving an optical semiconductor element according to the present embodiment, in a state where the first region 101 and the second region 102 function as a gain region and the third region 103 functions as a loss region, the first in the active layer 13 Light is generated by the transition from the level to the base level. As a result, the output of the optical semiconductor element 1 can be preferably increased.

本実施形態に係る光半導体素子の駆動方法では、光導波方向Ａが、真っ直ぐに延在する方向である。これにより、第２領域１０２の利得量が第１領域１０１の利得量よりも大きくなるように光半導体素子１を駆動することが容易化される。すなわち、仮に、光導波方向Ａが真っ直ぐに延在する方向ではない場合、Ｙ軸方向における光半導体素子１のサイズ（幅）が大きくなり易い。光半導体素子１は、例えばサブマウント等の熱膨張係数が異なる材料に半田で接合されるが、光半導体素子１のサイズが大きくなると、接合面積が大きくなるため、光半導体素子１に蓄えられる内部応力が大きくなる。この場合、発光成分の偏光比ＴＥ／ＴＭが低下する、すなわちＴＭモード成分比率が増加することが考えられる。損失領域におけるＱＣＳＥ効果（Quantum Confined Stark Effect）は主にＴＥモード成分に寄与し、ＴＭモード成分への寄与は小さい。すなわち、ＴＭモード成分に対して損失領域は透明体のように機能する。損失領域を透過したＴＭモード成分は端面における反射により正帰還を受け、レーザ発振に至る。したがって、光半導体素子１のサイズが大きくなると、ＳＬＤ動作から発振状態に至り易くなるため、第２領域１０２の利得量が第１領域１０１の利得量よりも大きくなるように光半導体素子１を駆動することが難しくなる。これに対し、本実施形態に係る光半導体素子の駆動方法では、光導波方向Ａが真っ直ぐに延在する方向であるため、光半導体素子１のサイズの増加を抑制することができ、その結果、第２領域１０２の利得量が第１領域１０１の利得量よりも大きくなるように光半導体素子１を駆動することが容易化される。更に、光導波方向Ａが真っ直ぐに延在する方向であるため、良好なビームパターンを有する出力光Ｌを得ることができる。 In the method for driving an optical semiconductor device according to the present embodiment, the optical waveguide direction A is a direction in which the optical waveguide direction A extends straight. As a result, it becomes easy to drive the optical semiconductor element 1 so that the gain amount of the second region 102 is larger than the gain amount of the first region 101. That is, if the optical waveguide direction A is not in a straight extending direction, the size (width) of the optical semiconductor element 1 in the Y-axis direction tends to increase. The optical semiconductor element 1 is bonded to a material having a different coefficient of thermal expansion such as a submount by soldering. However, as the size of the optical semiconductor element 1 increases, the bonding area increases, so that the inside stored in the optical semiconductor element 1 is stored. The stress increases. In this case, it is conceivable that the polarization ratio TE / TM of the light emitting component decreases, that is, the TM mode component ratio increases. The QCSE effect (Quantum Confined Stark Effect) in the loss region mainly contributes to the TE mode component, and the contribution to the TM mode component is small. That is, the loss region functions like a transparent body with respect to the TM mode component. The TM mode component that has passed through the loss region receives positive feedback due to reflection at the end face, leading to laser oscillation. Therefore, as the size of the optical semiconductor element 1 increases, it becomes easier to reach the oscillation state from the SLD operation, so that the optical semiconductor element 1 is driven so that the gain amount in the second region 102 is larger than the gain amount in the first region 101. It becomes difficult to do. On the other hand, in the method for driving the optical semiconductor element according to the present embodiment, since the optical waveguide direction A extends straight, it is possible to suppress an increase in the size of the optical semiconductor element 1, and as a result, It is easy to drive the optical semiconductor element 1 so that the gain amount of the second region 102 is larger than the gain amount of the first region 101. Further, since the optical waveguide direction A is a direction extending straight, it is possible to obtain output light L having a good beam pattern.

本実施形態に係る光半導体素子の駆動方法では、第２領域１０２における第１領域１０１とは反対側の端面１０２ａが、光導波方向Ａに垂直な面である。これにより、光半導体素子１のサイズの増加を一層抑制することができ、その結果、第２領域１０２の利得量が第１領域１０１の利得量よりも大きくなるように光半導体素子１を駆動することが一層容易化される。更に、端面１０２ａが光導波方向Ａに垂直な面であるため、一層良好なビームパターンを有する出力光Ｌを得ることができる。 In the method for driving an optical semiconductor element according to the present embodiment, the end surface 102a of the second region 102 opposite to the first region 101 is a surface perpendicular to the optical waveguide direction A. As a result, the increase in the size of the optical semiconductor element 1 can be further suppressed, and as a result, the optical semiconductor element 1 is driven so that the gain amount in the second region 102 is larger than the gain amount in the first region 101. Is made even easier. Further, since the end surface 102a is a surface perpendicular to the optical waveguide direction A, the output light L having a better beam pattern can be obtained.

本実施形態に係る光半導体素子の駆動方法では、端面１０２ａには低反射層９が設けられている。これにより、低反射層９によって端面１０２ａにおける反射を抑制することで、発振状態に至り難くすることができ、その結果、第２領域１０２の利得量が第１領域１０１の利得量よりも大きくなるように光半導体素子１を駆動することがより一層容易化される。更に、出力光Ｌの出射面となる端面１０２ａで出力光Ｌの一部が反射されることにより光学的なロスが生じるのを抑制することができる。 In the method for driving an optical semiconductor element according to the present embodiment, the low reflection layer 9 is provided on the end face 102a. As a result, the low reflection layer 9 suppresses the reflection on the end face 102a, so that it is difficult to reach the oscillation state, and as a result, the gain amount in the second region 102 becomes larger than the gain amount in the first region 101. As described above, it is further facilitated to drive the optical semiconductor element 1. Further, it is possible to suppress the occurrence of optical loss due to the reflection of a part of the output light L on the end surface 102a which is the exit surface of the output light L.

本実施形態に係る光半導体素子の駆動方法では、第１分離領域１７が、イオン注入領域又は不純物拡散領域によって構成されており、第２分離領域１８が、イオン注入領域、不純物拡散領域、又は第２クラッド層１５とは伝導型が異なる半導体領域によって構成されている。このため、第１分離領域１７により、第１領域１０１と第２領域１０２との間の光学的な接続及び電気的な分離を好適に実現することができる。また、第２分離領域１８により、第１領域１０１と第３領域との間の光学的な接続及び電気的な分離を好適に実現することができる。 In the method for driving an optical semiconductor device according to the present embodiment, the first separation region 17 is composed of an ion implantation region or an impurity diffusion region, and the second separation region 18 is an ion implantation region, an impurity diffusion region, or a first. It is composed of a semiconductor region having a different conduction type from the two-clad layer 15. Therefore, the first separation region 17 can suitably realize the optical connection and the electrical separation between the first region 101 and the second region 102. In addition, the second separation region 18 can suitably realize an optical connection and an electrical separation between the first region 101 and the third region.

本開示は、上記実施形態に限られない。例えば、図５に示される第１変形例のように、光導波方向Ａにおける第２領域１０２の長さＬ２と光導波方向Ａにおける第１領域１０１の長さＬ１とが互いに等しくてもよい。第１変形例では、長さＬ１，Ｌ２は例えば０．７５ｍｍである。図６に示される第２変形例のように、第２領域１０２の長さＬ２が第１領域１０１の長さＬ１よりも長くてもよい。第２変形例では、例えば、長さＬ２は１ｍｍであり、長さＬ１は０．５ｍｍである。 The present disclosure is not limited to the above embodiment. For example, as in the first modification shown in FIG. 5, the length L2 of the second region 102 in the optical waveguide direction A and the length L1 of the first region 101 in the optical waveguide direction A may be equal to each other. In the first modification, the lengths L1 and L2 are, for example, 0.75 mm. As in the second modification shown in FIG. 6, the length L2 of the second region 102 may be longer than the length L1 of the first region 101. In the second modification, for example, the length L2 is 1 mm and the length L1 is 0.5 mm.

このような第１変形例及び第２変形例においても、上記実施形態と同様に、第１領域１０１及び第２領域１０２を利得領域として機能させると共に第３領域１０３を損失領域として機能させている状態において第２領域１０２の利得量ｇＬが第１領域１０１の利得量ｇＬよりも大きくなるように光半導体素子１を駆動することで、第１領域１０１及び第２領域１０２で発生した光を効果的に増倍させて取り出すことができ、光半導体素子１の高出力化を図ることができる。更に、第２変形例では、第２領域１０２の長さＬ２が第１領域１０１の長さＬ１よりも長いため、第２領域１０２の利得量ｇＬが第１領域１０１の利得量ｇＬよりも大きくなるように光半導体素子１を駆動することが容易化されている。 In such a first modification and a second modification, the first region 101 and the second region 102 function as a gain region and the third region 103 functions as a loss region, as in the above embodiment. By driving the photosemiconductor element 1 so that the gain amount gL of the second region 102 is larger than the gain amount gL of the first region 101 in the state, the light generated in the first region 101 and the second region 102 is effective. The optical semiconductor element 1 can be increased in output and can be taken out. Further, in the second modification, since the length L2 of the second region 102 is longer than the length L1 of the first region 101, the gain amount gL of the second region 102 is larger than the gain amount gL of the first region 101. It is easy to drive the optical semiconductor element 1 so as to be.

上記実施形態では光導波路体１０が第１領域１０１、第２領域１０２及び第３領域１０３の３つの領域に分割されていたが、図７に示される第３変形例のように、光導波路体１０が第１領域１０１、第２領域１０２、第３領域１０３及び第４領域１０４の４つの領域に分割されていてもよい。第４領域１０４は、第１電極５、第２電極６及び第３電極７と同様に設けられた第５電極２１の下方の領域である。第５電極２１は、光導波方向Ａにおいて第２電極６に対して第１電極５とは反対側に配置されている。第５電極２１と第２電極６との間には、Ｙ軸方向に延在する隙間Ｓ３が形成されており、第５電極２１と第２電極６との間は、第３分離領域１９により、光学的に接続され且つ電気的に分離されている。第３分離領域１９は、第１分離領域１７及び第２分離領域１８と同様に構成されている。 In the above embodiment, the optical waveguide 10 is divided into three regions, a first region 101, a second region 102, and a third region 103, but as in the third modification shown in FIG. 7, the optical waveguide is 10 may be divided into four regions, a first region 101, a second region 102, a third region 103, and a fourth region 104. The fourth region 104 is a region below the fifth electrode 21 provided similarly to the first electrode 5, the second electrode 6, and the third electrode 7. The fifth electrode 21 is arranged on the side opposite to the first electrode 5 with respect to the second electrode 6 in the optical waveguide direction A. A gap S3 extending in the Y-axis direction is formed between the fifth electrode 21 and the second electrode 6, and a third separation region 19 is formed between the fifth electrode 21 and the second electrode 6. , Optically connected and electrically separated. The third separation region 19 is configured in the same manner as the first separation region 17 and the second separation region 18.

第３変形例では、光導波方向Ａにおける第１領域１０１の長さＬ１、光導波方向Ａにおける第２領域１０２の長さＬ２、及び光導波方向Ａにおける第４領域１０４の長さＬ４は、互いに等しい。長さＬ１，Ｌ２，Ｌ４は例えば０．５ｍｍである。第３変形例では、第１電極５と第４電極８との間、第２電極６と第４電極８との間、及び第５電極２１と第４電極８と間のそれぞれに順バイアスをかけることにより、第１領域１０１、第２領域１０２及び第４領域１０４を利得領域として機能させる共に、第３電極７と第４電極８との間に逆バイアスをかけることにより、第３領域１０３を損失領域として機能させる。第１領域１０１、第２領域１０２及び第４領域１０４を利得領域として機能させると共に第３領域１０３を損失領域として機能させている状態において、第４領域１０４の利得量ｇＬが第２領域１０２の利得量ｇＬ及び第１領域１０１の利得量ｇＬよりも大きくなり、且つ、第２領域１０２の利得量ｇＬが第１領域１０１の利得量ｇＬよりも大きくなるように、光半導体素子１を駆動する。これにより、第１領域１０１、第２領域１０２及び第４領域１０４で発生した光を効果的に増倍させて取り出すことができ、光半導体素子１の一層の高出力化を図ることができる。 In the third modification, the length L1 of the first region 101 in the optical waveguide direction A, the length L2 of the second region 102 in the optical waveguide direction A, and the length L4 of the fourth region 104 in the optical waveguide direction A are Equal to each other. The lengths L1, L2 and L4 are, for example, 0.5 mm. In the third modification, a forward bias is applied between the first electrode 5 and the fourth electrode 8, between the second electrode 6 and the fourth electrode 8, and between the fifth electrode 21 and the fourth electrode 8. By applying, the first region 101, the second region 102, and the fourth region 104 function as gain regions, and by applying a reverse bias between the third electrode 7 and the fourth electrode 8, the third region 103 To function as a loss area. In a state where the first region 101, the second region 102, and the fourth region 104 function as the gain region and the third region 103 functions as the loss region, the gain amount gL of the fourth region 104 is the second region 102. The optical semiconductor element 1 is driven so that the gain amount gL and the gain amount gL of the first region 101 are larger than the gain amount gL of the first region 101 and the gain amount gL of the second region 102 is larger than the gain amount gL of the first region 101. .. As a result, the light generated in the first region 101, the second region 102, and the fourth region 104 can be effectively multiplied and extracted, and the output of the photosemiconductor element 1 can be further increased.

図８に示される第４変形例のように、第２領域１０２が、Ｚ軸方向（第２クラッド層１５に垂直な方向）から見た場合に、第１領域１０１から遠ざかるほど幅が広くなるフレア形状をなしていてもよい。この例では、第２領域１０２の幅は、第１領域１０１から遠ざかるほど直線的に広くなっている。このような第４変形例においても、上記実施形態と同様に、第１領域１０１及び第２領域１０２を利得領域として機能させると共に第３領域１０３を損失領域として機能させている状態において、第２領域１０２の利得量ｇＬが第１領域１０１の利得量ｇＬよりも大きくなるように光半導体素子１を駆動することで、第１領域１０１及び第２領域１０２で発生した光を効果的に増倍させて取り出すことができ、光半導体素子１の高出力化を図ることができる。更に、第４変形例では、第２領域１０２がフレア形状をなしており、第２領域１０２において光が広がりながら増幅されるため、広いビームパターンを有する出力光Ｌを得ることができる。また、電流密度を低減して利得飽和の発生を抑制することができると共に、熱の影響を低減することができるため、光半導体素子１の一層の高出力化を図ることもできる。 As in the fourth modification shown in FIG. 8, when the second region 102 is viewed from the Z-axis direction (direction perpendicular to the second clad layer 15), the width becomes wider as the distance from the first region 101 increases. It may have a flared shape. In this example, the width of the second region 102 becomes linearly wider as the distance from the first region 101 increases. In such a fourth modification, as in the above embodiment, the second region 101 and the second region 102 function as the gain region and the third region 103 functions as the loss region. By driving the optical semiconductor device 1 so that the gain amount gL of the region 102 is larger than the gain amount gL of the first region 101, the light generated in the first region 101 and the second region 102 is effectively multiplied. It is possible to increase the output of the photosemiconductor element 1 by allowing it to be taken out. Further, in the fourth modification, the second region 102 has a flare shape, and the light is amplified while spreading in the second region 102, so that the output light L having a wide beam pattern can be obtained. Further, since the current density can be reduced to suppress the occurrence of gain saturation and the influence of heat can be reduced, the output of the optical semiconductor element 1 can be further increased.

上述した実施形態では、１つの第４電極８が共通電極として第１電極５、第２電極６及び第３電極７と対向していたが、複数の第４電極８が第１電極５、第２電極６及び第３電極７とそれぞれ対向していてもよい。上述した実施形態では、光導波路体１０がリッジ構造として構成されていたが、光導波路体１０が埋め込み構造として構成されていてもよい。その場合にも、光を閉じ込めるための筒状の領域の中心線に沿った方向、換言すれば、当該筒状の領域によって囲まれた活性層１３が延在する方向が光導波方向Ａとなる。光導波方向Ａは、湾曲して延在する方向であってもよく、真っ直ぐに延在する部分及び湾曲して延在する部分の双方を含む方向であってもよい。光導波方向Ａは、第２領域１０２の端面１０２ａに対して傾斜して延在する方向であってもよい。各構成の材料及び形状には、上述した材料及び形状に限らず、様々な材料及び形状を採用することができる。 In the above-described embodiment, one fourth electrode 8 faces the first electrode 5, the second electrode 6, and the third electrode 7 as a common electrode, but a plurality of fourth electrodes 8 are the first electrode 5, the first electrode 5, and the third electrode 7. The two electrodes 6 and the third electrode 7 may be opposed to each other. In the above-described embodiment, the optical waveguide 10 is configured as a ridge structure, but the optical waveguide 10 may be configured as an embedded structure. Even in that case, the direction along the center line of the tubular region for confining the light, in other words, the direction in which the active layer 13 surrounded by the tubular region extends is the optical waveguide direction A. .. The optical waveguide direction A may be a curved and extending direction, or may be a direction including both a straight extending portion and a curved and extending portion. The optical waveguide direction A may be a direction that is inclined and extends with respect to the end face 102a of the second region 102. As the material and shape of each configuration, not only the above-mentioned material and shape but also various materials and shapes can be adopted.

１…光半導体素子、５…第１電極、６…第２電極、７…第３電極、８…第４電極、９…低反射層、１０…光導波路体、１１…第１クラッド層、１３…活性層、１５…第２クラッド層、１５ａ…表面、１７…第１分離領域、１８…第２分離領域、１０１…第１領域、１０２…第２領域、１０２ａ…端面、１０３…第３領域、Ａ…光導波方向。 1 ... Optical semiconductor device, 5 ... 1st electrode, 6 ... 2nd electrode, 7 ... 3rd electrode, 8 ... 4th electrode, 9 ... Low reflection layer, 10 ... Optical waveguide, 11 ... 1st clad layer, 13 ... active layer, 15 ... second clad layer, 15a ... surface, 17 ... first separation region, 18 ... second separation region, 101 ... first region, 102 ... second region, 102a ... end face, 103 ... third region , A ... Optical waveguide direction.

Claims (17)

光半導体素子の駆動方法であって、
前記光半導体素子は、
活性層、並びに、前記活性層を挟む第１クラッド層及び第２クラッド層を含むダブルヘテロ構造として構成された光導波路体と、
前記第２クラッド層上に設けられた第１電極と、
前記光導波路体の光導波方向における前記第１電極の一方の側において前記第２クラッド層上に設けられた第２電極と、
前記光導波路体の前記光導波方向における前記第１電極の他方の側において前記第２クラッド層上に設けられた第３電極と、
前記光導波路体を挟んで、前記第１電極、前記第２電極及び前記第３電極と対向する少なくとも１つの第４電極と、を備え、
前記光導波路体には、
前記第２クラッド層の表面から前記第１クラッド層に至り、前記第１電極下の第１領域と前記第２電極下の第２領域との間を光学的に接続しつつ、前記第１領域と前記第２領域とを互いに電気的に分離する第１分離領域と、
前記第２クラッド層の表面から前記第１クラッド層に至り、前記第１電極下の前記第１領域と前記第３電極下の第３領域との間を光学的に接続しつつ、前記第１領域と前記第３領域とを互いに電気的に分離する第２分離領域と、が設けられており、
前記光半導体素子の駆動方法は、
前記第１電極と前記少なくとも１つの第４電極との間、及び前記第２電極と前記少なくとも１つの第４電極との間のそれぞれに順バイアスをかけることにより、前記第１領域及び前記第２領域を利得領域として機能させる共に、前記第３電極と前記少なくとも１つの第４電極との間に逆バイアスをかけることにより、前記第３領域を損失領域として機能させる工程を含み、
前記第１領域及び前記第２領域を利得領域として機能させると共に前記第３領域を損失領域として機能させている状態において、前記第２領域を光が単位距離進行する間に獲得する利得に対応する値と前記光導波方向における前記第２領域の長さとの積は、前記第１領域を光が単位距離進行する間に獲得する利得に対応する値と前記光導波方向における前記第１領域の長さとの積よりも大きい、光半導体素子の駆動方法。It is a driving method for optical semiconductor elements.
The optical semiconductor element is
An optical waveguide configured as a double heterostructure including an active layer and a first clad layer and a second clad layer sandwiching the active layer.
The first electrode provided on the second clad layer and
A second electrode provided on the second clad layer on one side of the first electrode in the optical waveguide direction of the optical waveguide, and a second electrode.
A third electrode provided on the second clad layer on the other side of the first electrode in the optical waveguide direction of the optical waveguide, and a third electrode.
The first electrode, the second electrode, and at least one fourth electrode facing the third electrode are provided across the optical waveguide.
The optical waveguide has
The first clad layer is reached from the surface of the second clad layer, and the first region is optically connected between the first region under the first electrode and the second region under the second electrode. And the first separation region that electrically separates the second region from each other,
The first clad layer is reached from the surface of the second clad layer, and the first region is optically connected between the first region under the first electrode and the third region under the third electrode. A second separation region that electrically separates the region and the third region from each other is provided.
The driving method of the optical semiconductor element is
By applying a forward bias between the first electrode and the at least one fourth electrode, and between the second electrode and the at least one fourth electrode, the first region and the second electrode are applied. It includes a step of making the third region function as a loss region by making the region function as a gain region and applying a reverse bias between the third electrode and at least one fourth electrode.
Corresponding to the gain acquired while the light travels a unit distance in the second region in a state where the first region and the second region function as a gain region and the third region functions as a loss region. The product of the value and the length of the second region in the optical waveguide direction is the value corresponding to the gain obtained while the light travels the first region for a unit distance and the length of the first region in the optical waveguide direction. A method of driving an optical semiconductor element that is larger than the product of the gain. 前記活性層は、多重量子井戸構造を有する、請求項１に記載の光半導体素子の駆動方法。 The method for driving an optical semiconductor device according to claim 1, wherein the active layer has a multiple quantum well structure. 前記第１領域及び前記第２領域を利得領域として機能させると共に、前記第３領域を損失領域として機能させている状態では、前記活性層における第１準位から基底準位への遷移によって光が発生する、請求項１又は２に記載の光半導体素子の駆動方法。 In a state where the first region and the second region function as a gain region and the third region functions as a loss region, light is emitted by the transition from the first level to the basal level in the active layer. The method for driving an optical semiconductor element according to claim 1 or 2, which is generated. 前記光導波方向は、真っ直ぐに延在する方向である、請求項１〜３のいずれか一項に記載の光半導体素子の駆動方法。 The method for driving an optical semiconductor element according to any one of claims 1 to 3, wherein the optical waveguide direction is a direction extending straight. 前記第２領域における前記第１領域とは反対側の端面は、前記光導波方向に垂直な面である、請求項１〜４のいずれか一項に記載の光半導体素子の駆動方法。 The method for driving an optical semiconductor device according to any one of claims 1 to 4, wherein the end surface of the second region opposite to the first region is a surface perpendicular to the optical waveguide direction. 前記第２領域における前記第１領域とは反対側の端面には、低反射層が設けられている、請求項１〜５のいずれか一項に記載の光半導体素子の駆動方法。 The method for driving an optical semiconductor device according to any one of claims 1 to 5, wherein a low reflection layer is provided on an end surface of the second region opposite to the first region. 前記第１分離領域は、イオン注入領域又は不純物拡散領域によって構成されており、
前記第２分離領域は、イオン注入領域、不純物拡散領域、又は前記第２クラッド層とは伝導型が異なる半導体領域によって構成されている、請求項１〜６のいずれか一項に記載の光半導体素子の駆動方法。The first separation region is composed of an ion implantation region or an impurity diffusion region.
The optical semiconductor according to any one of claims 1 to 6, wherein the second separation region is composed of an ion implantation region, an impurity diffusion region, or a semiconductor region having a conduction type different from that of the second clad layer. How to drive the element. 前記光導波方向における前記第２領域の長さは、前記光導波方向における前記第１領域の長さよりも長い、請求項１〜７のいずれか一項に記載の光半導体素子の駆動方法。 The method for driving an optical semiconductor device according to any one of claims 1 to 7, wherein the length of the second region in the optical waveguide direction is longer than the length of the first region in the optical waveguide direction. 前記第２領域は、前記第２クラッド層に垂直な方向から見た場合に、前記第１領域から遠ざかるほど幅が広くなるフレア形状をなしている、請求項１〜８のいずれか一項に記載の光半導体素子の駆動方法。 According to any one of claims 1 to 8, the second region has a flare shape in which the width becomes wider as the distance from the first region increases when viewed from a direction perpendicular to the second clad layer. The method for driving an optical semiconductor device described. 光半導体素子の駆動方法であって、
前記光半導体素子は、
活性層、並びに、前記活性層を挟む第１クラッド層及び第２クラッド層を含むダブルヘテロ構造として構成された光導波路体と、
前記第２クラッド層上に設けられた第１電極と、
前記光導波路体の光導波方向における前記第１電極の一方の側において前記第２クラッド層上に設けられた第２電極と、
前記光導波路体の前記光導波方向における前記第１電極の他方の側において前記第２クラッド層上に設けられた第３電極と、
前記光導波路体を挟んで、前記第１電極、前記第２電極及び前記第３電極と対向する少なくとも１つの第４電極と、を備え、
前記光導波路体には、
前記第２クラッド層の表面から前記第１クラッド層に至り、前記第１電極下の第１領域と前記第２電極下の第２領域との間を光学的に接続しつつ、前記第１領域と前記第２領域とを互いに電気的に分離する第１分離領域と、
前記第２クラッド層の表面から前記第１クラッド層に至り、前記第１電極下の前記第１領域と前記第３電極下の第３領域との間を光学的に接続しつつ、前記第１領域と前記第３領域とを互いに電気的に分離する第２分離領域と、が設けられており、
前記光半導体素子の駆動方法は、
前記第１電極と前記少なくとも１つの第４電極との間、及び前記第２電極と前記少なくとも１つの第４電極との間のそれぞれに順バイアスをかけることにより、前記第１領域及び前記第２領域を利得領域として機能させる共に、前記第３電極と前記少なくとも１つの第４電極との間に逆バイアスをかけることにより、前記第３領域を損失領域として機能させる工程を含み、
前記第１領域及び前記第２領域を利得領域として機能させると共に、前記第３領域を損失領域として機能させている状態において、前記光導波方向に沿って前記第２領域を通過した光が獲得する利得は、前記光導波方向に沿って前記第１領域を通過した光が獲得する利得よりも大きい、光半導体素子の駆動方法。It is a driving method for optical semiconductor elements.
The optical semiconductor element is
An optical waveguide configured as a double heterostructure including an active layer and a first clad layer and a second clad layer sandwiching the active layer.
The first electrode provided on the second clad layer and
A second electrode provided on the second clad layer on one side of the first electrode in the optical waveguide direction of the optical waveguide, and a second electrode.
A third electrode provided on the second clad layer on the other side of the first electrode in the optical waveguide direction of the optical waveguide, and a third electrode.
The first electrode, the second electrode, and at least one fourth electrode facing the third electrode are provided across the optical waveguide.
The optical waveguide has
The first clad layer is reached from the surface of the second clad layer, and the first region is optically connected between the first region under the first electrode and the second region under the second electrode. And the first separation region that electrically separates the second region from each other,
The first clad layer is reached from the surface of the second clad layer, and the first region is optically connected between the first region under the first electrode and the third region under the third electrode. A second separation region that electrically separates the region and the third region from each other is provided.
The driving method of the optical semiconductor element is
By applying a forward bias between the first electrode and the at least one fourth electrode, and between the second electrode and the at least one fourth electrode, the first region and the second electrode are applied. It includes a step of making the third region function as a loss region by making the region function as a gain region and applying a reverse bias between the third electrode and at least one fourth electrode.
In a state where the first region and the second region function as a gain region and the third region functions as a loss region, light that has passed through the second region along the optical waveguide direction is acquired. A method for driving an optical semiconductor device, wherein the gain is larger than the gain acquired by the light passing through the first region along the optical waveguide direction. 活性層、並びに、前記活性層を挟む第１クラッド層及び第２クラッド層を含むダブルヘテロ構造として構成された光導波路体と、
前記第２クラッド層上に設けられた第１電極と、
前記光導波路体の光導波方向における前記第１電極の一方の側において前記第２クラッド層上に設けられた第２電極と、
前記光導波路体の前記光導波方向における前記第１電極の他方の側において前記第２クラッド層上に設けられた第３電極と、
前記光導波路体を挟んで、前記第１電極、前記第２電極及び前記第３電極と対向する少なくとも１つの第４電極と、を備え、
前記光導波路体には、
前記第２クラッド層の表面から前記第１クラッド層に至り、前記第１電極下の第１領域と前記第２電極下の第２領域との間を光学的に接続しつつ、前記第１領域と前記第２領域とを互いに電気的に分離する第１分離領域と、
前記第２クラッド層の表面から前記第１クラッド層に至り、前記第１電極下の前記第１領域と前記第３電極下の第３領域との間を光学的に接続しつつ、前記第１領域と前記第３領域とを互いに電気的に分離する第２分離領域と、が設けられており、
前記光導波方向における前記第２領域の長さは、前記光導波方向における前記第１領域の長さよりも長い、光半導体素子。An optical waveguide configured as a double heterostructure including an active layer and a first clad layer and a second clad layer sandwiching the active layer.
The first electrode provided on the second clad layer and
A second electrode provided on the second clad layer on one side of the first electrode in the optical waveguide direction of the optical waveguide, and a second electrode.
A third electrode provided on the second clad layer on the other side of the first electrode in the optical waveguide direction of the optical waveguide, and a third electrode.
The first electrode, the second electrode, and at least one fourth electrode facing the third electrode are provided across the optical waveguide.
The optical waveguide has
The first clad layer is reached from the surface of the second clad layer, and the first region is optically connected between the first region under the first electrode and the second region under the second electrode. And the first separation region that electrically separates the second region from each other,
The first clad layer is reached from the surface of the second clad layer, and the first region is optically connected between the first region under the first electrode and the third region under the third electrode. A second separation region that electrically separates the region and the third region from each other is provided.
An optical semiconductor device in which the length of the second region in the optical waveguide direction is longer than the length of the first region in the optical waveguide direction. 前記活性層は、多重量子井戸構造を有する、請求項１１に記載の光半導体素子。 The optical semiconductor device according to claim 11, wherein the active layer has a multiple quantum well structure. 前記光導波方向は、真っ直ぐに延在する方向である、請求項１１又は１２に記載の光半導体素子。 The optical semiconductor device according to claim 11 or 12, wherein the optical waveguide direction is a direction extending straight. 前記第２領域における前記第１領域とは反対側の端面は、前記光導波方向に垂直な面である、請求項１１〜１３のいずれか一項に記載の光半導体素子。 The optical semiconductor device according to any one of claims 11 to 13, wherein the end surface of the second region opposite to the first region is a surface perpendicular to the optical waveguide direction. 前記第２領域における前記第１領域とは反対側の端面には、低反射層が設けられている、請求項１１〜１４のいずれか一項に記載の光半導体素子。 The optical semiconductor device according to any one of claims 11 to 14, wherein a low reflection layer is provided on an end surface of the second region opposite to the first region. 前記第１分離領域は、イオン注入領域又は不純物拡散領域によって構成されており、
前記第２分離領域は、イオン注入領域、不純物拡散領域、又は前記第２クラッド層とは伝導型が異なる半導体領域によって構成されている、請求項１１〜１５のいずれか一項に記載の光半導体素子の駆動方法。The first separation region is composed of an ion implantation region or an impurity diffusion region.
The optical semiconductor according to any one of claims 11 to 15, wherein the second separation region is composed of an ion implantation region, an impurity diffusion region, or a semiconductor region whose conduction type is different from that of the second clad layer. How to drive the element. 活性層、並びに、前記活性層を挟む第１クラッド層及び第２クラッド層を含むダブルヘテロ構造として構成された光導波路体と、
前記第２クラッド層上に設けられた第１電極と、
前記光導波路体の光導波方向における前記第１電極の一方の側において前記第２クラッド層上に設けられた第２電極と、
前記光導波路体の前記光導波方向における前記第１電極の他方の側において前記第２クラッド層上に設けられた第３電極と、
前記光導波路体を挟んで、前記第１電極、前記第２電極及び前記第３電極と対向する少なくとも１つの第４電極と、を備え、
前記光導波路体には、
前記第２クラッド層の表面から前記第１クラッド層に至り、前記第１電極下の第１領域と前記第２電極下の第２領域との間を光学的に接続しつつ、前記第１領域と前記第２領域とを互いに電気的に分離する第１分離領域と、
前記第２クラッド層の表面から前記第１クラッド層に至り、前記第１電極下の前記第１領域と前記第３電極下の第３領域との間を光学的に接続しつつ、前記第１領域と前記第３領域とを互いに電気的に分離する第２分離領域と、が設けられており、
前記第２領域は、前記第２クラッド層に垂直な方向から見た場合に、前記第１領域から遠ざかるほど幅が広くなるフレア形状をなしている、光半導体素子。An optical waveguide configured as a double heterostructure including an active layer and a first clad layer and a second clad layer sandwiching the active layer.
The first electrode provided on the second clad layer and
A second electrode provided on the second clad layer on one side of the first electrode in the optical waveguide direction of the optical waveguide, and a second electrode.
A third electrode provided on the second clad layer on the other side of the first electrode in the optical waveguide direction of the optical waveguide, and a third electrode.
The first electrode, the second electrode, and at least one fourth electrode facing the third electrode are provided across the optical waveguide.
The optical waveguide has
The first clad layer is reached from the surface of the second clad layer, and the first region is optically connected between the first region under the first electrode and the second region under the second electrode. And the first separation region that electrically separates the second region from each other,
The first clad layer is reached from the surface of the second clad layer, and the first region is optically connected between the first region under the first electrode and the third region under the third electrode. A second separation region that electrically separates the region and the third region from each other is provided.
The second region is an optical semiconductor device having a flare shape in which the width becomes wider as the distance from the first region increases when viewed from a direction perpendicular to the second clad layer.
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