JPWO2010104098A1 - 太陽電池の製造方法及び太陽電池 - Google Patents
太陽電池の製造方法及び太陽電池 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 172
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 46
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 27
- 230000001681 protective effect Effects 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
Description
(太陽電池の構成)
本発明の第1実施形態に係る太陽電池の構成について、図1及び図2を参照しながら説明する。図1は、第1実施形態に係る太陽電池100の裏面側の平面図である。図2は、図1のA−A線における拡大断面図である。
次に、太陽電池100の製造方法について、図3乃至図7を参照しながら説明する。なお、各図(a)は、n型結晶シリコン基板10nを裏面側から見た平面図であり、各図(b)は、各図(a)の断面図である。
第1実施形態に係る太陽電池100の製造方法は、レジスト膜50を除去するとともに、n型非晶質半導体層12nの一部を除去する工程を備える。
以下において、第2実施形態に係る太陽電池100について、図面を参照しながら説明する。以下においては、第1実施形態との相違点について主に説明する。
第2実施形態に係る太陽電池100の製造方法は、レジスト膜50を除去するとともに、i型非晶質半導体層12i及びn型非晶質半導体層12nを除去する工程を備える。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
10n…n型結晶シリコン基板
11i…i型非晶質半導体層
11p…p型非晶質半導体層
12i…i型非晶質半導体層
12n…n型非晶質半導体層
20n…n側電極
20p…p側電極
30,50…レジスト膜
40…電極層
100…太陽電池
Claims (6)
- 半導体基板の一主面の第1領域上において、第1導電型を有する第1半導体層を形成する工程Aと、
前記一主面の前記第2領域上から前記第1半導体層上に跨って、第2導電型を有する第2半導体層を形成する工程Bと、
前記第2半導体層上に電極層を形成する工程Cと、
前記電極層のうち前記第1領域及び前記第2領域に対応する領域上に保護膜を施す工程Dと、
前記電極層のうち前記保護膜から露出する部分を除去する工程Eと、
前記保護膜を除去する工程Fとを備え、
前記工程Fにおいて、
前記第2半導体層のうち前記マスクから露出する部分の少なくとも一部を前記保護膜とともに除去することを特徴とする太陽電池の製造方法。 - 半導体基板と、
前記半導体基板の一主面上における第1領域上に形成され、第1導電型を有する第1半導体層と、
前記半導体基板の前記一主面上における第2領域上に形成され、第2導電型を有する第2半導体層と、
前記第1領域上において、前記第1半導体層上に形成された第1電極と、
前記第2領域上において、前記第2半導体層上に形成された第2電極とを備え、
前記第2半導体層は、前記第2領域上から前記第1半導体層上に跨って形成されており、
前記第2半導体層は、前記第1電極及び前記第2電極から露出する部分に、前記第2半導体層のうち前記第1電極及び前記第2電極に被覆される部分よりも厚みの小さい部分を有することを特徴とする太陽電池。 - 前記第2半導体層の導電型はp型であることを特徴とする請求項2に記載の太陽電池。
- 前記半導体基板は、結晶シリコン基板であることを特徴とする請求項2又は3に記載の太陽電池。
- 前記半導体基板は、n型の導電型を有することを特徴とする請求項2又は3に記載の太陽電池。
- 前記第1半導体層及び前記第2半導体層は、非晶質半導体からなることを特徴とする請求項4に記載の太陽電池。
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WO2012132614A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置 |
EP2690669A4 (en) * | 2011-03-25 | 2014-08-20 | Sanyo Electric Co | SOLAR CELL |
WO2012132729A1 (ja) * | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
JP2013030615A (ja) * | 2011-07-28 | 2013-02-07 | Sanyo Electric Co Ltd | 太陽電池 |
KR101826912B1 (ko) | 2011-11-07 | 2018-02-08 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 광전변환소자 및 그 제조 방법 |
CN102496643B (zh) * | 2011-12-09 | 2013-10-30 | 深圳市创益科技发展有限公司 | 一种低压大电流硅基薄膜太阳能电池及其制备方法 |
CN104011881B (zh) * | 2011-12-21 | 2016-05-04 | 太阳能公司 | 混合型多晶硅异质结背接触电池 |
WO2013133006A1 (ja) * | 2012-03-08 | 2013-09-12 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP6032911B2 (ja) * | 2012-03-23 | 2016-11-30 | シャープ株式会社 | 光電変換素子およびその製造方法 |
JP6103867B2 (ja) * | 2012-09-12 | 2017-03-29 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
JP6284522B2 (ja) * | 2013-03-28 | 2018-02-28 | シャープ株式会社 | 光電変換素子、光電変換モジュールおよび太陽光発電システム |
WO2017056378A1 (ja) | 2015-09-30 | 2017-04-06 | パナソニックIpマネジメント株式会社 | 太陽電池セルの製造方法 |
WO2017168474A1 (ja) * | 2016-03-30 | 2017-10-05 | パナソニックIpマネジメント株式会社 | 太陽電池セル、太陽電池モジュール、太陽電池セルの製造方法 |
WO2020203227A1 (ja) * | 2019-03-29 | 2020-10-08 | 株式会社カネカ | 太陽電池の製造方法、仕掛太陽電池基板、及び太陽電池 |
CN112018196B (zh) * | 2020-08-04 | 2022-11-29 | 隆基绿能科技股份有限公司 | 背接触太阳电池及生产方法、背接触电池组件 |
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WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
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JP2005101240A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2005101427A (ja) * | 2003-09-26 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2008529265A (ja) * | 2005-01-20 | 2008-07-31 | コミツサリア タ レネルジー アトミーク | へテロ接合およびインターフィンガ構造を有する半導体デバイス |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
WO2010001848A1 (ja) * | 2008-06-30 | 2010-01-07 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
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EP2408021A1 (en) | 2012-01-18 |
EP2408021A4 (en) | 2017-05-17 |
US9006564B2 (en) | 2015-04-14 |
WO2010104098A1 (ja) | 2010-09-16 |
US20120037227A1 (en) | 2012-02-16 |
CN102349166A (zh) | 2012-02-08 |
JP5538360B2 (ja) | 2014-07-02 |
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