JPWO2007049357A1 - Secondary electron emission rate measuring device - Google Patents

Secondary electron emission rate measuring device Download PDF

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JPWO2007049357A1
JPWO2007049357A1 JP2007542547A JP2007542547A JPWO2007049357A1 JP WO2007049357 A1 JPWO2007049357 A1 JP WO2007049357A1 JP 2007542547 A JP2007542547 A JP 2007542547A JP 2007542547 A JP2007542547 A JP 2007542547A JP WO2007049357 A1 JPWO2007049357 A1 JP WO2007049357A1
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井手　亜里
亜里 井手
森本　康彦
康彦 森本
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Abstract

安価で小型な二次電子放出率測定装置を提供する。本発明に係る二次電子放出率測定装置は、頂部に開口部を有す筒状電極とその中心軸部に棒状電極を備え、グロー放電プラズマによって荷電粒子を生成するための荷電粒子生成源と、荷電粒子ビームを収束させ被測定物に照射するための静電レンズと、被測定物質から放出される二次電子を捕捉するための二次電子コレクター部とからなる小型二次電子測定ユニットと、被測定物を保持する試料保持部とを真空チャンバー内に備えた二次電子測定部と、真空チャンバー内を減圧にする気体排気部と、荷電粒子生成源に荷電粒子となるガスを供給する気体供給部と、荷電粒子生成源、静電レンズ及び二次電子コレクター電極に電圧を印加し、電流を測定する電圧印加部と電流測定部と、これらを制御し、二次電子放出率を算出する制御コンピュータと、から構成される。An inexpensive and small secondary electron emission rate measuring device is provided. A secondary electron emission rate measuring apparatus according to the present invention includes a cylindrical electrode having an opening at the top and a rod-like electrode at the central axis, and a charged particle generation source for generating charged particles by glow discharge plasma. A small secondary electron measuring unit comprising an electrostatic lens for converging a charged particle beam and irradiating an object to be measured, and a secondary electron collector for capturing secondary electrons emitted from the material to be measured; A secondary electron measuring unit having a sample holding unit for holding an object to be measured in a vacuum chamber, a gas exhaust unit for reducing the pressure in the vacuum chamber, and supplying a gas to be charged particles to a charged particle generation source Voltage is applied to the gas supply unit, charged particle generation source, electrostatic lens, and secondary electron collector electrode, and the voltage application unit and current measurement unit that measure current are controlled to calculate the secondary electron emission rate. Control computer Data and consists of.

Description

本発明は、二次電子放出率測定装置に関し、詳細にはプラズマディスプレイパネルの誘電体保護膜の二次電子放出率を生産ラインに於いてリアルタイム測定する、又は研究開発施設等に於いて精密に測定する二次電子放出率測定装置に関する。   The present invention relates to a secondary electron emission rate measuring apparatus, and more specifically, measures a secondary electron emission rate of a dielectric protective film of a plasma display panel in real time on a production line or precisely in a research and development facility. The present invention relates to an apparatus for measuring a secondary electron emission rate to be measured.

インターネット等のグローバルネットワークとローカルネットワークの整備により、これらのネットワークを介して情報を送受信するための情報端末が飛躍的に増加している。このような情報端末の使用場所はオフィスの机上で使用するものの他に、携帯用、会議室用等様々で、それに応じてディスプレイが多様化している。
プラズマディスプレイパネルは、薄型、自己発光型、視野角が広い等の特徴を生かした大画面のディスプレイとして、会議室用の情報端末、戸外の広告、大型テレビ等の用途に需要の拡大が期待されている。With the development of global networks such as the Internet and local networks, information terminals for transmitting and receiving information via these networks have increased dramatically. In addition to those used on office desks, such information terminals are used for various purposes such as portable and conference rooms, and displays are diversified accordingly.
Plasma display panels are expected to grow in demand for information terminals for conference rooms, outdoor advertisements, large TVs, etc. as large-screen displays that take advantage of their thin, self-luminous type and wide viewing angle. ing.

図７はＡＣ型のプラズマディスプレイパネル（以下、Ｐｌａｓｍａ Ｄｉｓｐｌａｙ Ｐａｎｅｌ：ＰＤＰと略す）の構成図である。
図７に示すように、ＰＤＰ３０１は、前面ガラス基板３０２と背面ガラス基板３０３が対向して配置され、前面、背面両基板は周囲で封止（図示せず）されており、不活性ガス（放電ガス）が封入されている。前面ガラス基板３０２には一対の維持電極３０４が透明導電物質で形成される。維持電極３０４の電圧降下を防止するために維持電極３０４と平行で維持電極３０４の一部と接触するバス電極が高導電率の金属で形成されるが、図７では省略している。維持電極３０４上には維持電極３０４を被覆する誘電体膜３０５、保護膜（誘電体保護膜）３０６が積層される。
一方、背面ガラス基板３０３上にはアドレス電極３０７が形成される。また、アドレス電極３０７と平行に隔壁３０８が一定間隔に形成され、前面、背面両基板間の空間をアドレス電極方向の帯状の空間に仕切っている。現在は生産技術が向上し、隔壁が格子型もしくはミアンダ型に設計されているものもある。アドレス電極３０７は誘電体層３１０で覆われ、その上面に蛍光体３０９が形成されている。
なお、図７では説明の都合上、前面ガラス基板３０２上の維持電極３０４と背面ガラス３０３上のアドレス電極３０７は平行に描かれているが、実際には維持電極３０４とアドレス電極３０７は９０度のねじれの角度で配置されるように前面、背面ガラスは封止される。FIG. 7 is a configuration diagram of an AC type plasma display panel (hereinafter abbreviated as “Plasma Display Panel”).
As shown in FIG. 7, in the PDP 301, a front glass substrate 302 and a rear glass substrate 303 are arranged to face each other, and both the front and rear substrates are sealed (not shown) around the periphery, and an inert gas (discharge) Gas) is enclosed. A pair of sustain electrodes 304 is formed of a transparent conductive material on the front glass substrate 302. In order to prevent a voltage drop of the sustain electrode 304, a bus electrode parallel to the sustain electrode 304 and in contact with a part of the sustain electrode 304 is formed of a metal having a high conductivity, but is omitted in FIG. A dielectric film 305 and a protective film (dielectric protective film) 306 that cover the sustain electrode 304 are stacked on the sustain electrode 304.
On the other hand, address electrodes 307 are formed on the rear glass substrate 303. In addition, partition walls 308 are formed in parallel with the address electrodes 307 at regular intervals, and the space between the front and back substrates is partitioned into strip-shaped spaces in the address electrode direction. At present, production technology has been improved, and some of the partition walls are designed in a lattice type or a meander type. The address electrode 307 is covered with a dielectric layer 310, and a phosphor 309 is formed on the top surface thereof.
In FIG. 7, for convenience of explanation, the sustain electrode 304 on the front glass substrate 302 and the address electrode 307 on the rear glass 303 are drawn in parallel, but in reality, the sustain electrode 304 and the address electrode 307 are 90 degrees. The front and back glass are sealed so as to be arranged at an angle of twist of.

アドレス電極３０７と維持電極３０４の間に電圧を印加することで放電させ、この放電の維持を一対の維持電極３０４にＡＣ電圧を印加することよって行う。不活性ガスが放電により励起され紫外線が発生し、この紫外線を受けて蛍光体３０９が発光する。このような構造のＰＤＰの放電開始電圧および放電維持電圧は保護膜３０６のイオン衝撃による二次電子放出率に依存し、放出率が高ければ放電開始電圧および放電維持電圧を下げることができ、低消費電力化される。液晶に比べて消費電力の大きいＰＤＰは、低消費電力化が需要拡大にとって、最も大きな課題である。
現在、保護膜としては酸化マグネシウム複合薄膜が広く用いられているが、それに代わる二次電子放出率の高い保護膜を開発する研究が活発に行われており、二次電子放出率を正確、簡便に測定できる装置が求められている。また、ＰＤＰ製造上も保護膜の二次電子放出率を測定し管理することは重要であり、今後、二次電子放出率測定装置の需要は大きくなる。The discharge is performed by applying a voltage between the address electrode 307 and the sustain electrode 304, and this discharge is maintained by applying an AC voltage to the pair of sustain electrodes 304. The inert gas is excited by discharge to generate ultraviolet rays, and the phosphor 309 emits light upon receiving the ultraviolet rays. The discharge start voltage and the discharge sustain voltage of the PDP having such a structure depend on the secondary electron emission rate due to ion bombardment of the protective film 306. If the emission rate is high, the discharge start voltage and the discharge sustain voltage can be lowered. Power consumption is reduced. For PDPs that consume more power than liquid crystals, reducing power consumption is the biggest challenge for expanding demand.
Currently, magnesium oxide composite thin film is widely used as a protective film, but research is underway to develop a protective film with a high secondary electron emission rate to replace it. Therefore, there is a need for a device that can perform measurement. In addition, it is important to measure and manage the secondary electron emission rate of the protective film in the manufacture of PDPs, and the demand for secondary electron emission rate measuring devices will increase in the future.

イオンビーム照射による二次電子測定法は、例えば特許文献１、特許文献２、特許文献３に開示されている。例えば特許文献１の装置はチャンバー内に荷電粒子を生成するイオン化部と、被測定物質を載せる陰極と、二次電子を捕獲する電極を備えている。照射された荷電粒子量と放出された二次電子量を陰極と収集電極の電流として測定し二次電子放出率を求める。特許文献２、特許文献３についても、基本的な構造は同じである。   Secondary electron measurement methods using ion beam irradiation are disclosed in, for example, Patent Document 1, Patent Document 2, and Patent Document 3. For example, the apparatus of Patent Document 1 includes an ionization unit that generates charged particles in a chamber, a cathode on which a substance to be measured is placed, and an electrode that captures secondary electrons. The amount of charged particles irradiated and the amount of secondary electrons emitted are measured as the currents of the cathode and the collecting electrode to determine the secondary electron emission rate. The basic structure of Patent Documents 2 and 3 is the same.

しかしながら、特許文献１、特許文献３の技術による荷電粒子ビームを用いた二次電子放出率の測定装置は荷電粒子生成源、被測定物質固定ホルダー、入射電流測定装置、放出電子電流測定装置、及び制御装置を含む大掛かりなものである。特に荷電粒子生成源は二次電子放出率の測定に特化したものではなく、例えば物質分析用の集束イオンビーム（ＦＩＢ）や物質加工用イオンビームに用いられているものを流用しているため、非常に高価である。従って、小規模の研究施設や企業においては二次電子放出率に関する研究を行うことが困難である。   However, the secondary electron emission rate measuring device using the charged particle beam according to the techniques of Patent Literature 1 and Patent Literature 3 includes a charged particle generation source, a measurement object fixing holder, an incident current measuring device, an emitted electron current measuring device, and It is a big one including a control device. In particular, the charged particle generation source is not specialized for the measurement of the secondary electron emission rate, but for example, a focused ion beam (FIB) for material analysis or an ion beam for material processing is used. Is very expensive. Therefore, it is difficult for small-scale research facilities and companies to conduct research on the secondary electron emission rate.

また特許文献１、特許文献３の二次電子放出率測定に用いられる荷電粒子ビームは、そのエネルギーが数百ｅＶから数ｋｅＶと大きく、その電流量も大きい。そのため、絶縁体物質の二次電子放出率を評価する際、表面のチャージアップ現象によりＳＮ比が悪化する。プラズマディスプレイパネル内の荷電粒子のエネルギーは数十ｅＶから数百ｅＶであり、二次電子放出率測定にこの領域のエネルギー値の荷電粒子ビームを使用するほうが望ましいが、従来技術では測定が困難である。   In addition, the charged particle beam used for measuring the secondary electron emission rate of Patent Document 1 and Patent Document 3 has a large energy of several hundred eV to several keV and a large amount of current. Therefore, when evaluating the secondary electron emission rate of the insulator material, the SN ratio is deteriorated due to the surface charge-up phenomenon. The energy of charged particles in the plasma display panel is several tens to several hundreds eV, and it is preferable to use a charged particle beam having an energy value in this region for measuring the secondary electron emission rate. is there.

さらに特許文献１、特許文献２、特許文献３に記載されている測定対象は実験用に作成した基板の上に蒸着されたＭｇＯ薄膜である。本特許において提言している生産ライン上でリアルタイムに二次電子放出率を評価・管理するという技術的思想はこれまで開示されておらず、本装置によって初めて生産ライン上に装置を設置することが可能となる。
特開平１１−２３０９２３号公報 特開２００４−２８９０６号公報 特開２００４−１７７１３５号公報 Furthermore, the measurement object described in Patent Document 1, Patent Document 2, and Patent Document 3 is an MgO thin film deposited on a substrate prepared for an experiment. The technical idea of evaluating and managing the secondary electron emission rate in real time on the production line proposed in this patent has not been disclosed so far, and it is the first time that this device is installed on the production line. It becomes possible.
JP-A-11-230923 JP 2004-28906 A JP 2004-177135 A

本発明は上記従来技術の問題点に鑑みてなされたものであって、ＰＤＰの生産に於ける品質管理の観点から、生産ラインにおける保護膜の二次電子放出率の均一性をリアルタイムに監視する小型で安価な二次電子放出率測定装置を提供することを目的とする。
また、二次電子放出率に関する研究、開発にも適するように、荷電粒子ビームの正確な制御を可能にすると共に、電子線照射に於ける二次電子放出率の測定を可能な二次電子放出率測定装置を提供することを目的とする。The present invention has been made in view of the above-mentioned problems of the prior art. From the viewpoint of quality control in the production of PDP, the uniformity of secondary electron emission rate of the protective film in the production line is monitored in real time. An object of the present invention is to provide a small and inexpensive secondary electron emission rate measuring device.
In addition, it is possible to accurately control the charged particle beam so that it is suitable for research and development on the secondary electron emission rate, and it is possible to measure the secondary electron emission rate during electron beam irradiation. An object is to provide a rate measuring device.

上記目的を達成するために、本発明の請求項１に記載の二次電子放出率測定装置は、頂部に開口部を有す筒状電極と前記筒状電極の中心軸部に設けた棒状電極と荷電粒子となる気体を導入する気体導入管とを備え、前記筒状電極と棒状電極間のグロー放電プラズマによって荷電粒子を生成し、前記開口部から放出する荷電粒子生成源と、前記開口部から放出された荷電粒子のビームを収束させ被測定物に照射する静電レンズと、被測定物質から放出される二次電子を捕捉するための二次電子コレクター電極とからなる小型二次電子測定ユニットと、被測定物を保持する試料保持部とを真空チャンバー内に備えた二次電子測定部と、
前記真空チャンバー内を減圧にする気体排気部と、前記荷電粒子生成源に荷電粒子となるガスを供給する気体供給部と、前記荷電粒子生成源、静電レンズ及び二次電子コレクター電極に電圧を印加し、電流を測定する電圧印加部と電流測定部と、これらを制御し、二次電子放出率を算出する制御コンピュータと、
から構成されることを特徴とする。In order to achieve the above object, a secondary electron emission rate measuring apparatus according to claim 1 of the present invention includes a cylindrical electrode having an opening at the top and a rod-shaped electrode provided at a central axis portion of the cylindrical electrode. And a gas introduction tube for introducing a gas to be charged particles, a charged particle generating source for generating charged particles by glow discharge plasma between the cylindrical electrode and the rod-shaped electrode, and emitting the charged particles from the opening, and the opening Small secondary electron measurement consisting of an electrostatic lens that converges the beam of charged particles emitted from the target and irradiates the object to be measured, and a secondary electron collector electrode for capturing secondary electrons emitted from the substance to be measured A secondary electron measuring unit including a unit and a sample holding unit for holding an object to be measured in a vacuum chamber;
A voltage is applied to the gas exhaust unit for reducing the pressure in the vacuum chamber, a gas supply unit for supplying a gas as charged particles to the charged particle generation source, the charged particle generation source, the electrostatic lens, and the secondary electron collector electrode. A voltage application unit for applying and measuring current, a current measurement unit, a control computer for controlling these and calculating a secondary electron emission rate;
It is comprised from these.

本発明の請求項２に記載の二次電子放出率測定装置は、請求項１に記載の二次電子放出率測定装置であって、更に、荷電粒子生成源は、制御コンピュータの制御により気体供給部からガスを導入させ、電圧印加部により筒状電極に正電圧と棒状電極に負電圧を印加してグロー放電プラズマを生成することにより荷電粒子を生成し記気体排気部により真空チャンバーを減圧して筒状電極の頂部開口部より圧力差によって押し出された荷電粒子を筒状電極に印加された電圧によって加速させる構造であることを特徴とする。   The secondary electron emission rate measuring device according to claim 2 of the present invention is the secondary electron emission rate measuring device according to claim 1, wherein the charged particle generation source is supplied with gas under the control of a control computer. Gas is introduced from the part, a positive voltage is applied to the cylindrical electrode by the voltage application part, and a negative voltage is applied to the rod electrode to generate glow discharge plasma to generate charged particles, and the vacuum chamber is depressurized by the gas exhaust part. The charged particles pushed out by the pressure difference from the top opening of the cylindrical electrode are accelerated by the voltage applied to the cylindrical electrode.

本発明の請求項３に記載の二次電子放出率測定装置は、請求項１に記載の二次電子放出率測定装置であって、更に、静電レンズは、空間電位により前記荷電粒子のビームを収束させると同時に、荷電粒子生成源からの荷電粒子のビーム中の電子を反射・除去し、二次電子コレクター電極で捉えきれなかった放出二次電子を二次電子コレクター電極に戻すように構成されることを特徴とする。   The secondary electron emission rate measuring device according to claim 3 of the present invention is the secondary electron emission rate measuring device according to claim 1, and the electrostatic lens further includes a beam of the charged particles by a space potential. At the same time, it is configured to reflect and remove electrons in the charged particle beam from the charged particle generation source and return the emitted secondary electrons that could not be captured by the secondary electron collector electrode to the secondary electron collector electrode. It is characterized by being.

本発明の請求項４に記載の二次電子放出率測定装置は、請求項１に記載の二次電子放出率測定装置であって、更に、制御コンピュータの制御により電圧印加部から荷電粒子生成源の筒状電極と棒状電極への印加電圧の極性を逆転して荷電粒子のビームを正イオンビームから電子ビームへ変更し、さらに静電レンズへの印加電圧の極性も逆転して、電子ビームを照射する二次電子放出率の測定することを特徴とする。   The secondary electron emission rate measuring device according to claim 4 of the present invention is the secondary electron emission rate measuring device according to claim 1, and further, a charged particle generation source from a voltage application unit under the control of a control computer. The polarity of the applied voltage to the cylindrical electrode and the rod-shaped electrode is reversed to change the charged particle beam from the positive ion beam to the electron beam, and the polarity of the applied voltage to the electrostatic lens is also reversed to change the electron beam It is characterized by measuring a secondary electron emission rate to be irradiated.

本発明の請求項５に記載の二次電子放出率測定装置は、請求項１乃至４のいずれか１項に記載の二次電子放出率測定装置であって、更に、二次電子測定部は複数の小型二次電子測定ユニットを備え、複数の小型二次電子測定ユニット又は試料保持部のいずれかを棒状電極に垂直な平面を移動させる駆動部を備え、制御コンピュータは前記駆動装置を制御し、二次電子放出率の面分布を算出することを特徴とする。   The secondary electron emission rate measuring device according to claim 5 of the present invention is the secondary electron emission rate measuring device according to any one of claims 1 to 4, wherein the secondary electron measuring unit further comprises: A plurality of small secondary electron measurement units, and a drive unit that moves one of the plurality of small secondary electron measurement units or the sample holding unit in a plane perpendicular to the rod-shaped electrode, and the control computer controls the drive device. The surface distribution of the secondary electron emission rate is calculated.

本発明の請求項６に記載の二次電子放出率測定装置は、請求項１乃至４のいずれか１項に記載の二次電子放出率測定装置であって、更に、試料保持部は複数の試料を保持し、試料保部を棒状電極に垂直な平面を移動させる駆動部を備え、制御コンピュータは駆動部を制御し、複数の試料の二次電子放出率を順次算出することを特徴とする。   The secondary electron emission rate measuring device according to claim 6 of the present invention is the secondary electron emission rate measuring device according to any one of claims 1 to 4, further comprising a plurality of sample holders. A driving unit that holds a sample and moves the sample holding unit in a plane perpendicular to the rod-shaped electrode, and the control computer controls the driving unit to sequentially calculate secondary electron emission rates of a plurality of samples. .

上記構成において、荷電粒子生成のためにグロー放電プラズマを利用し、さらにグロー放電プラズマ生成と荷電粒子加速の二つの役割を筒状電極によって担う構造にすることで、荷電粒子生成源を大幅に簡素化、小型化できる。この結果、従来は別々の構成であった荷電粒子生成源、静電レンズ、二次電子コレクター部のユニット化が可能となる。これより、従来は荷電粒子生成源、静電レンズ、二次電子コレクター間でビームを引出す為にそれぞれの位置調整が必要であったが、ユニット化したことにより位置調整の手間を省くことができ、容易に二次電子放出率測定が可能となる。さらに、従来技術では測定チャンバーに荷電粒子生成源が備えられていることが前提であったため、装置が非常に巨大かつコストのかかるものであったが、本発明の二次電子放出率測定装置では、荷電粒子生成源、静電レンズ、及び二次電子コレクター部のユニット化により測定チャンバーに荷電粒子生成源が備わっている必要がなく、気体導入部及び電流導入部さえあれば測定可能になるため、装置の小型化・低コスト化が可能となる。   In the above configuration, the use of glow discharge plasma for charged particle generation, and the structure that plays two roles of glow discharge plasma generation and charged particle acceleration by the cylindrical electrode, greatly simplifies the charged particle generation source. And miniaturization. As a result, it is possible to unitize the charged particle generation source, the electrostatic lens, and the secondary electron collector unit, which conventionally have different configurations. As a result, in the past, it was necessary to adjust the position of each of the charged particle generator, electrostatic lens, and secondary electron collector in order to extract the beam. However, the unitization eliminates the need for position adjustment. The secondary electron emission rate can be easily measured. Furthermore, since it was assumed in the prior art that the measurement chamber was equipped with a charged particle generation source, the apparatus was very large and expensive, but the secondary electron emission rate measuring apparatus of the present invention In addition, the unitization of the charged particle generation source, electrostatic lens, and secondary electron collector unit eliminates the need for a charged particle generation source in the measurement chamber and enables measurement with only a gas introduction unit and a current introduction unit. This makes it possible to reduce the size and cost of the device.

また、従来技術では生成の難しかった、ＰＤＰのセル内の荷電粒子とほぼ等しい数十ｅＶから数百ｅＶの低エネルギー荷電粒子ビームを用いた二次電子放出率の測定が容易に可能となる。さらに従来技術と比べ荷電粒子ビームのエネルギーが数百から数十分の一に抑えられるため、二次電子放出率測定を非破壊に行うことが可能となる。一方、荷電粒子電流量も数ｎＡから十数ｎＡまで電流量を安定して絞ることが可能になることにより、従来技術では表面のチャージアップのため二次電子放出率が困難であった絶縁体ターゲットの場合も、チャージアップによる悪影響を受けずに測定が可能となる。   Further, it is possible to easily measure the secondary electron emission rate using a low energy charged particle beam of several tens eV to several hundred eV which is almost the same as the charged particles in the cell of the PDP, which is difficult to generate by the prior art. Furthermore, since the energy of the charged particle beam can be suppressed to several hundred to several tenths as compared with the prior art, the secondary electron emission rate measurement can be performed nondestructively. On the other hand, since it is possible to stably reduce the amount of charged particle current from several nA to several tens of nA, an insulator whose secondary electron emission rate has been difficult due to surface charge-up in the prior art In the case of a target, measurement can be performed without being adversely affected by charge-up.

本発明の実施例１による二次電子放出率測定装置の構成図である。It is a block diagram of the secondary electron emission rate measuring apparatus by Example 1 of this invention. 本発明の実施例２による二次電子放出率測定装置の構成図である。It is a block diagram of the secondary electron emission rate measuring apparatus by Example 2 of this invention. 本発明の荷電粒子生成源で生成される荷電粒子ビームのエネルギー分布図である。It is an energy distribution map of the charged particle beam produced | generated with the charged particle production | generation source of this invention. 本発明の荷電粒子生成源で生成される荷電粒子ビームの時間変化図である。It is a time change figure of the charged particle beam produced | generated with the charged particle production | generation source of this invention. 本発明の二次電子放出率測定装置における二次電子コレクター電極電流の印加電圧依存性である。It is the applied voltage dependence of the secondary electron collector electrode current in the secondary electron emission rate measuring device of the present invention. 本発明の二次電子放出率測定装置により得られた様々な物質の二次電子放出率である。It is a secondary electron emission rate of various substances obtained by the secondary electron emission rate measuring device of the present invention. プラズマディスプレイパネルの構成図である。It is a block diagram of a plasma display panel.

符号の説明Explanation of symbols

１０１、２０１ 気体供給部
１０２、１２２、２０２、２２３ バルブ
１０３、２０３ 真空チャンバー
１０４、２０４ 気体導入パイプ
１０５、２０５ 気体導入管
１０６、２０６ 棒状電極
１０７、２０７ 荷電粒子生成室固定板
１０８、２０８ セラミックディスク
１０９、１１３、１１５、１１７、２０９、２１３、２１５、２１７ 絶縁性スペーサー
１１０、２１０ 筒状電極
１１１、２１１ 荷電粒子通過孔（開口部）
１１２、１１４、１１６、２１２、２１４、２１６ 静電レンズ
１１８、２１８、２２２ 外乱除去電極
１１９、２１９ 二次電子コレクター電極
１２０、２２０ 被測定物質 （保護膜）
１２１ 基板
１２３、２２４ 気体排気部
１２４、２２５ 真空計
１２５、１２７、１２８、１３０、２２７、２２９、２３０、２３２、 電圧印加部
１２６、１２９、１３１、２２６、２２８、２３１、２３３ 電流測定部
１３２、２３４ 制御コンピュータ
２２１ 試料保持部
３０１ プラズマディスプレイパネル
３０２ 前面ガラス基板
３０３ 背面ガラス基板
３０４ 維持電極
３０５ 誘電体膜
３０６ 保護膜（誘電体保護膜）
３０７ アドレス電極
３０８ 隔壁
３０９ 蛍光体
３１０ 誘電体層101, 201 Gas supply section 102, 122, 202, 223 Valve 103, 203 Vacuum chamber 104, 204 Gas introduction pipe 105, 205 Gas introduction pipe 106, 206 Rod electrode 107, 207 Charged particle generation chamber fixing plate 108, 208 Ceramic disc 109, 113, 115, 117, 209, 213, 215, 217 Insulating spacer 110, 210 Cylindrical electrode 111, 211 Charged particle passage hole (opening)
112, 114, 116, 212, 214, 216 Electrostatic lenses 118, 218, 222 Disturbance removal electrodes 119, 219 Secondary electron collector electrodes 120, 220 Substance to be measured (protective film)
121 Substrate 123, 224 Gas exhaust part 124, 225 Vacuum gauge 125, 127, 128, 130, 227, 229, 230, 232, Voltage application part 126, 129, 131, 226, 228, 231, 233 Current measuring part 132, 234 Control computer 221 Sample holder 301 Plasma display panel 302 Front glass substrate 303 Rear glass substrate 304 Sustain electrode 305 Dielectric film 306 Protective film (dielectric protective film)
307 Address electrode 308 Partition 309 Phosphor 310 Dielectric layer

発明の実施の形態BEST MODE FOR CARRYING OUT THE INVENTION

以下、本発明の実施の形態について図面を用いて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１はＰＤＰの生産ラインにおいて品質管理のために被測定物質（保護膜）の二次電子放出率の均一性（製品間バラツキ、製品内バラツキ）を測定することを目的として構成された二次電子放出率測定装置である。この二次電子放出率測定装置は、荷電粒子生成源、静電レンズ、及び二次電子コレクター部からなる小型二次電子ユニットと、この小型二次電子ユニットと試料保持部を真空チャンバー内に備えた二次電子測定部と、この二次電子測定部を動作させるための気体供給部、気体排気部、複数の電圧印加部、複数の電流測定部、駆動部、及び、制御コンピュータから構成されている。   Figure 1 shows a secondary structure designed to measure the uniformity of the secondary electron emission rate (variation between products and dispersion within a product) of a substance to be measured (protective film) for quality control in a PDP production line. This is an electron emission rate measuring device. This secondary electron emission rate measuring apparatus includes a small secondary electron unit including a charged particle generation source, an electrostatic lens, and a secondary electron collector, and the small secondary electron unit and a sample holder in a vacuum chamber. A secondary electron measurement unit, a gas supply unit for operating the secondary electron measurement unit, a gas exhaust unit, a plurality of voltage application units, a plurality of current measurement units, a drive unit, and a control computer. Yes.

荷電粒子を生成するために、気体供給部１０１から荷電粒子にするための気体が気体導入パイプ１０４と気体導入管１０５を通して筒状電極１１０内に供給される。
筒状電極１１０内の中心軸の位置には棒状電極１０６が形成されており、筒状電極１１０に正電圧を、棒状電極１０６に負電圧を印加することにより、両電極間でグロー放電プラズマが生じる。棒状電極１０６、筒状電極１１０はそれぞれ電圧印加部１３０、１２８により電圧が印加され、電流測定部１３１、１２９により電流が測定される。この筒状電極１１０と棒状電極１０６はセラミックディスク１０８を介して荷電粒子生成室固定板１０７に固定されており、筒状電極１１０と棒状電極１０６は荷電粒子生成室固定板１０７と絶縁を保っている。セラミックディスク１０８に保持された筒状電極１１０、棒状電極１０６及び気体導入管１０５が荷電粒子生成源を構成する。
棒状電極１０６と筒状電極１１０の材質はステンレス、タンタル、タングステン等の硬質金属である。また、気体供給部１０１から荷電粒子を生成するために導入される気体はＯ２、Ｎ２、ＣＯ２等の活性ガス又はＨｅ、Ｎｅ、Ａｒ、Ｘｅ等の不活性ガスである。In order to generate charged particles, a gas for making charged particles is supplied from the gas supply unit 101 into the cylindrical electrode 110 through the gas introduction pipe 104 and the gas introduction pipe 105.
A rod-shaped electrode 106 is formed at the position of the central axis in the cylindrical electrode 110. By applying a positive voltage to the cylindrical electrode 110 and a negative voltage to the rod-shaped electrode 106, glow discharge plasma is generated between the two electrodes. Arise. A voltage is applied to the rod-shaped electrode 106 and the cylindrical electrode 110 by the voltage application units 130 and 128, respectively, and currents are measured by the current measurement units 131 and 129. The cylindrical electrode 110 and the rod-shaped electrode 106 are fixed to the charged particle generation chamber fixing plate 107 via a ceramic disk 108, and the cylindrical electrode 110 and the rod-shaped electrode 106 are insulated from the charged particle generation chamber fixing plate 107. Yes. The cylindrical electrode 110, the rod electrode 106, and the gas introduction tube 105 held on the ceramic disk 108 constitute a charged particle generation source.
The rod electrode 106 and the cylindrical electrode 110 are made of a hard metal such as stainless steel, tantalum, or tungsten. The gas introduced to generate charged particles from the gas supply unit 101 is an active gas such as O 2 , N 2 , or CO 2 or an inert gas such as He, Ne, Ar, or Xe.

筒状電極の頂部には開口部（荷電粒子通過孔）１１１が形成されている。真空チャンバー１０３は、気体排気部１２３により所定の圧力に減圧されており、筒状電極１１０の内外の圧力差により、グロー放電プラズマによって生成された荷電粒子は荷電粒子通過孔１１１を通って外部に放出される。この際、荷電粒子通過孔１１１の孔径を真空チャンバー内の真空度に合わせて調節することで、チャンバーの真空度が低真空領域から高真空領域まで荷電粒子ビームを生成することができる。
即ち、チャンバーの真空度は、様々な測定条件に対応するために変更する必要があり、一方筒状電極内の真空度は導入されるガスに依存して最適の放電が起こる圧力に保つ必要がある。従って、チャンバー内と筒状電極内の真空度バランスを最適化するために荷電粒子通過孔１１１の孔径を調節する。そのために、荷電粒子通過孔１１１は孔径を可変、又は、孔径の異なる部材を着脱可能に取付ける構造とするのが好ましい。An opening (charged particle passage hole) 111 is formed at the top of the cylindrical electrode. The vacuum chamber 103 is depressurized to a predetermined pressure by the gas exhaust part 123, and charged particles generated by glow discharge plasma are exposed to the outside through the charged particle passage hole 111 due to a pressure difference between the inside and outside of the cylindrical electrode 110. Released. At this time, by adjusting the hole diameter of the charged particle passage hole 111 according to the degree of vacuum in the vacuum chamber, a charged particle beam can be generated from the low vacuum region to the high vacuum region.
That is, the degree of vacuum in the chamber needs to be changed in order to cope with various measurement conditions, while the degree of vacuum in the cylindrical electrode needs to be maintained at a pressure at which optimum discharge occurs depending on the introduced gas. is there. Therefore, the hole diameter of the charged particle passage hole 111 is adjusted in order to optimize the vacuum balance between the chamber and the cylindrical electrode. Therefore, the charged particle passage hole 111 preferably has a structure in which a hole diameter is variable or a member having a different hole diameter is detachably attached.

荷電粒子通過孔１１１から放出された荷電粒子はさらに筒状電極１１０に電圧印加部１２８により印加された電圧によって加速され、荷電粒子ビームとなる。筒状電極１１０に印加する電圧を制御することにより、荷電粒子ビームのエネルギーを調節することが出来る。
真空チャンバー１０３は気体排気部１２３によって真空引されており、所定の真空度に管理されている。The charged particles emitted from the charged particle passage hole 111 are further accelerated by the voltage applied to the cylindrical electrode 110 by the voltage application unit 128 to become a charged particle beam. By controlling the voltage applied to the cylindrical electrode 110, the energy of the charged particle beam can be adjusted.
The vacuum chamber 103 is evacuated by the gas exhaust unit 123 and is controlled to a predetermined degree of vacuum.

静電レンズ１１２、１１６は接地され、静電レンズ１１４は電圧印加部１２７により電圧を印加されている。なお、一般に「静電レンズ」は３つの電極に電圧を印加して、生ずる空間電位により荷電ビームを収束させる技術であるが、本明細書では「静電レンズ」を構成する３つの電極をそれぞれ静電レンズと呼ぶ。荷電粒子ビームは静電レンズ１１２、１１４、１１６によって収束され、試料保持部（図示せず）に保持された基板１２１上蒸着された被測定物質１２０へ照射される。生成された荷電粒子ビーム中には電子が含まれているが、荷電粒子ビームが静電レンズ１１２、１１４、１１６を通過する際に、空間電位によってそれらの電子が取り除かれる。また、被測定物質１２０から放出された二次電子が二次電子コレクター電極１１９に捕捉されず、二次電子コレクター電極１１９の孔からとび出る場合があるが、これらの電子は静電レンズ１１２、１１４、１１６による空間電位によって押し戻され、二次電子コレクター電極１１９によって捕捉される。
静電レンズ１１４に印加される電圧は、荷電粒子ビームを収束させるだけの目的には、正、負どちらの電圧を印加してもよいが、上述のように不必要な電子を排除するためには負電圧とするのが好ましい。
静電レンズは荷電粒子ビームを収束させると同時に、荷電粒子ビーム中の余分な電子が二次電子コレクター電極部に進入しないように除去し、さらに二次電子コレクター電極で捉えきれなかった被測定物質から放出された二次電子を二次電子コレクター電極に戻すという３つの役割を果たし、高精度な測定が可能になる。The electrostatic lenses 112 and 116 are grounded, and the electrostatic lens 114 is applied with a voltage by the voltage application unit 127. In general, the “electrostatic lens” is a technique in which a voltage is applied to three electrodes and a charged beam is converged by a generated space potential. In this specification, the three electrodes constituting the “electrostatic lens” are respectively This is called an electrostatic lens. The charged particle beam is converged by the electrostatic lenses 112, 114, and 116, and is irradiated onto the measurement target substance 120 deposited on the substrate 121 held by a sample holder (not shown). The generated charged particle beam contains electrons, but when the charged particle beam passes through the electrostatic lenses 112, 114, and 116, these electrons are removed by the space potential. In addition, secondary electrons emitted from the measured substance 120 may not be captured by the secondary electron collector electrode 119 and may jump out of the holes of the secondary electron collector electrode 119. It is pushed back by the space potential by 114, 116 and is captured by the secondary electron collector electrode 119.
The voltage applied to the electrostatic lens 114 may be either positive or negative for the purpose of focusing the charged particle beam, but in order to eliminate unnecessary electrons as described above. Is preferably a negative voltage.
The electrostatic lens converges the charged particle beam, and at the same time, removes excess electrons in the charged particle beam so that they do not enter the secondary electron collector electrode, and then the substance to be measured that could not be captured by the secondary electron collector electrode It plays the three roles of returning the secondary electrons emitted from the back to the secondary electron collector electrode, and enables highly accurate measurement.

荷電粒子ビームが照射されることにより、基板１２１上の被測定物質１２０から二次電子が放出されるが、この二次電子は二次電子コレクター電極１１９に電圧印加部１２５から正電圧を印加することで捕捉され、電子数は電流測定部１２６によって電流量として測定される。
荷電粒子生成源と３つの静電レンズと二次電子コレクター電極はユニット化され小型二次電子測定ユニットを構成する。
小型二次電子測定ユニットには、二次電子コレクター電極１１９周りの空間電位が静電レンズ１１２、１１４、１１６周りの空間電位に影響を及ぼさないように、また真空チャンバー１０３内の不必要な自由電子が二次電子コレクター電極１１９に捕獲されないように、外乱除去電極１１８を配置することが好ましい。By irradiating the charged particle beam, secondary electrons are emitted from the measured substance 120 on the substrate 121, and the secondary electrons apply a positive voltage from the voltage application unit 125 to the secondary electron collector electrode 119. The number of electrons is measured by the current measuring unit 126 as an amount of current.
The charged particle generation source, the three electrostatic lenses, and the secondary electron collector electrode are unitized to form a small secondary electron measurement unit.
The small secondary electron measurement unit has an unnecessary freedom in the vacuum chamber 103 so that the space potential around the secondary electron collector electrode 119 does not affect the space potential around the electrostatic lenses 112, 114, 116. Disturbance removal electrode 118 is preferably disposed so that electrons are not captured by secondary electron collector electrode 119.

従来は、二次電子放出率測定装置に本発明のようなグロー放電プラズマを用いたイオン源を使用しなかった。その理由として大電流量のビームを生成することが困難であることが挙げられる。
本発明では、上述した構成にすることにより、（１）筒状電極１１０の内部に棒状電極１０６を設置し、筒状電極内部へガスを導入して電極間でグロー放電プラズマを生成することにより荷電粒子を生成し、さらに筒状電極頂部の開口部１１１から圧力差によって押し出された荷電粒子を筒状電極１１０に印加された電圧によって加速させることにより、従来に比べ非常に簡素な構造で容易に低エネルギー荷電粒子ビームを生成し、（２）荷電粒子発生源１０５−１０８、１１０、静電レンズ１１２、１１４、１１６、二次電子コレクター電極１１８、１１９の距離を縮める構成で取り扱いの難しいイオン源としてこれまで着目されなかったグロー放電プラズマを用いたイオン源の二次電子放出率測定装置を実現した。また、低エネルギー荷電粒子ビームを用いることにより被測定物質のチャージアップの問題も解決した。このように小型二次電子測定ユニットを二次電子放出率測定用に特化させることで、従来よりも大幅に簡素な構造で容易に低エネルギー荷電粒子ビームを生成できる。Conventionally, an ion source using glow discharge plasma as in the present invention has not been used in a secondary electron emission rate measuring apparatus. The reason is that it is difficult to generate a beam with a large amount of current.
In the present invention, by adopting the above-described configuration, (1) the rod-like electrode 106 is installed inside the cylindrical electrode 110, gas is introduced into the cylindrical electrode, and glow discharge plasma is generated between the electrodes. By generating charged particles and accelerating the charged particles pushed out by the pressure difference from the opening 111 at the top of the cylindrical electrode by the voltage applied to the cylindrical electrode 110, it is easy with a very simple structure compared to the conventional case. (2) ions that are difficult to handle with a configuration in which the distance between the charged particle generation sources 105-108 and 110, the electrostatic lenses 112, 114, and 116, and the secondary electron collector electrodes 118 and 119 is reduced. An ion source secondary electron emission rate measurement device using glow discharge plasma, which has not been focused on as a source, has been realized. Moreover, the problem of charge-up of the substance to be measured was solved by using a low energy charged particle beam. By thus specializing the small secondary electron measurement unit for measuring the secondary electron emission rate, it is possible to easily generate a low energy charged particle beam with a significantly simpler structure than the conventional one.

上記構成の中で、荷電粒子生成源１０５−１０８、１１０、静電レンズ１１２、１１４、１１６、および二次電子コレクター電極１１７、１１８は絶縁性スペーサー１０９、１１３、１１５、１１７によって接続され、小型二次電子測定ユニットとしてユニット化されている。この小型二次電子測定ユニットは高さ７０ｍｍ以下、幅はφ４０ｍｍ以下のサイズで作製可能である。
更に、小型二次電子測定ユニットと試料保持部を真空チャンバー内に配置したものが二次電子測定部である。In the above configuration, the charged particle generation sources 105-108 and 110, the electrostatic lenses 112, 114 and 116, and the secondary electron collector electrodes 117 and 118 are connected by insulating spacers 109, 113, 115 and 117, and are compact. It is unitized as a secondary electron measurement unit. This small secondary electron measuring unit can be produced with a height of 70 mm or less and a width of φ40 mm or less.
Further, a secondary electron measuring unit is a unit in which a small secondary electron measuring unit and a sample holding unit are arranged in a vacuum chamber.

真空チャンバー１０３内を減圧にする気体排気部１２３のバルブ１２２、荷電粒子生成源に荷電粒子となるガスを供給する気体供給部１０１のバルブ１０２、真空計１２４、電圧印加部１２５、１２７、１２８、１３０、電流測定部１２６、１２９、１３１の制御及び／又は信号入出力は制御コンピュータ１３２で一括して行われる。以下に制御コンピュータ１３２の制御で行われる二次電子放出率の測定フローを述べる。   A valve 122 of a gas exhaust unit 123 for depressurizing the inside of the vacuum chamber 103, a valve 102 of a gas supply unit 101 for supplying a gas as a charged particle to a charged particle generation source, a vacuum gauge 124, a voltage application unit 125, 127, 128, Control of the current measuring units 126, 129, and 131 and / or signal input / output are collectively performed by the control computer 132. The measurement flow of the secondary electron emission rate performed under the control of the control computer 132 will be described below.

最初にバルブ１２２を開き真空チャンバー１０３の真空を引き、その真空度を真空計１２４により測定する。所定の真空度に達すると、バルブ１０２を開き荷電粒子にする気体を所定量供給する。バルブ１０２には流量計（図示せず）が備えられ、その出力信号は、システム制御コンピュータに送信され、これに基き所定の流量に制御される。電圧印加部１２８、１３０を制御して筒状電極１１０及び棒状電極１０６に所定の電圧を印加し、グロー放電プラズマを生成して荷電粒子ビームを放出する。グロー放電プラズマを生成後、電圧印加部１２７を制御し静電レンズ１１４に所定の電圧を印加し、ビームを収束させる。   First, the valve 122 is opened, the vacuum in the vacuum chamber 103 is drawn, and the degree of vacuum is measured by the vacuum gauge 124. When the predetermined degree of vacuum is reached, the valve 102 is opened to supply a predetermined amount of gas for forming charged particles. The valve 102 is provided with a flow meter (not shown), and its output signal is transmitted to the system control computer and controlled to a predetermined flow rate based thereon. The voltage application units 128 and 130 are controlled to apply a predetermined voltage to the cylindrical electrode 110 and the rod-like electrode 106 to generate glow discharge plasma and emit a charged particle beam. After the glow discharge plasma is generated, the voltage application unit 127 is controlled to apply a predetermined voltage to the electrostatic lens 114 to converge the beam.

荷電粒子ビームが安定後、電圧印加部１２５を制御して二次電子コレクター電極１１９に所定の電圧を印加し、被測定物質１２０から放出される二次電子を捕捉する。電流測定部１２６によって測定される二次電子電流量の時間に対する変化が制御コンピュータ１３２を通じて出力される。これより、工場の生産ラインにおいて全自動でリアルタイムに被測定物質の二次電子放出率を測定することが出来る。   After the charged particle beam is stabilized, the voltage application unit 125 is controlled to apply a predetermined voltage to the secondary electron collector electrode 119 to capture secondary electrons emitted from the substance 120 to be measured. Changes in the amount of secondary electron current measured by the current measuring unit 126 with respect to time are output through the control computer 132. As a result, the secondary electron emission rate of the substance to be measured can be measured in real time in a factory production line in a fully automatic manner.

なお、本実施例では被測定物に照射される荷電粒子のビーム量を測定していない。しかし、本装置は極めて安定しており、製造工程の品質管理の目的では全く支障ない。また、次に述べる実施例２では荷電粒子ビーム量を直接測定する構成になっており、実施例２の装置を用いて基礎データを十分に取ることで、導入ガスの種類および流量、棒状電極１０６および筒状電極１１０への印加電圧値等から、被測定物に照射される荷電粒子のビーム量を決定することが可能である。   In this embodiment, the beam amount of charged particles irradiated to the object to be measured is not measured. However, this apparatus is extremely stable and has no problem at all for the purpose of quality control in the manufacturing process. Further, in the second embodiment described below, the charged particle beam amount is directly measured. By sufficiently obtaining basic data using the apparatus of the second embodiment, the type and flow rate of the introduced gas, the rod-shaped electrode 106 are used. It is possible to determine the beam amount of charged particles irradiated to the object to be measured from the voltage value applied to the cylindrical electrode 110 and the like.

荷電粒子生成源、静電レンズ、二次電子コレクター部をユニット化した小型二次電子測定ユニットもしくは被測定物質を保持する試料保持部を、棒状電極の長手方向対し垂直な平面上を移動させる駆動部を小型二次電子測定ユニットもしくは試料保持部更に設け、この駆動部を制御コンピュータで制御して、小型二次電子測定ユニットと被測定物質の相対位置を所定の相対位置に変え、例えば工場の生産ライン上にある大画面ＰＤＰのような大きな被測定物質に対して、被測定物質の複数の点の二次電子放出率、あるいは二次電子放出率面分布を全自動でリアルタイムに測定可能な二次電子放出率測定装置とすることができる。
更に、小型二次電子測定ユニットを複数個備え、これらの小型二次電子測定ユニットもしくは、試料保持部を移動させる駆動部を設け、効率よく二次電子放出率面分布を測定することも可能である。A drive that moves a small particle secondary electron measurement unit with a charged particle generation source, electrostatic lens, and secondary electron collector as a unit, or a sample holder that holds the material to be measured, on a plane perpendicular to the longitudinal direction of the rod-shaped electrode The small secondary electron measurement unit or the sample holding unit is further provided, and the drive unit is controlled by a control computer to change the relative position of the small secondary electron measurement unit and the substance to be measured to a predetermined relative position. For a large substance to be measured such as a large screen PDP on the production line, the secondary electron emission rate or secondary electron emission rate surface distribution of multiple points of the substance to be measured can be measured fully automatically in real time. It can be set as the secondary electron emission rate measuring apparatus.
Furthermore, it is possible to measure the secondary electron emission rate surface distribution efficiently by providing a plurality of small secondary electron measurement units and providing a drive unit for moving these small secondary electron measurement units or sample holders. is there.

図２は研究開発施設等において被測定物質の二次電子放出率の精密測定実験を目的として構成された二次電子放出率測定装置である。この二次電子放出率測定装置は、荷電粒子生成源、静電レンズ、及び二次電子コレクター部からなる小型二次電子ユニットと、この小型二次電子ユニットと試料保持部を真空チャンバー内に備えた二次電子測定部と、この二次電子測定部を動作させるための気体供給部、気体排気部、複数の電圧印加部、複数の電流測定部、駆動部、及び、制御コンピュータから構成されている。この構成は実施例１と同じであるが、それぞれの構成の細部が実施例１と異なっている。   FIG. 2 shows a secondary electron emission rate measuring apparatus constructed for the purpose of a precise measurement experiment of the secondary electron emission rate of a substance to be measured in a research and development facility. This secondary electron emission rate measuring apparatus includes a small secondary electron unit including a charged particle generation source, an electrostatic lens, and a secondary electron collector, and the small secondary electron unit and a sample holder in a vacuum chamber. A secondary electron measurement unit, a gas supply unit for operating the secondary electron measurement unit, a gas exhaust unit, a plurality of voltage application units, a plurality of current measurement units, a drive unit, and a control computer. Yes. This configuration is the same as that of the first embodiment, but the details of each configuration are different from those of the first embodiment.

荷電粒子を生成するために、荷電粒子とする気体が気体供給部２０１から気体導入パイプ２０４と気体導入管２０５を通して筒状電極２１０内に供給される。筒状電極２１０に正電圧を、棒状電極２０６に負電圧を印加することにより、両電極間でグロー放電プラズマが生じる。
棒状電極２０６、筒状電極２１０に対してはそれぞれ電圧印加部２３２、２３０により電圧を印加し、電流測定部２３３、２３１により電流を測定している。この筒状電極２１０と棒状電極２０６はセラミックディスク２０８を介して荷電粒子生成室固定板２０７に固定されており、筒状電極２１０と棒状電極２０６は荷電粒子生成室固定板２０７と絶縁を保っている。
筒状電極２１０の内外の圧力差により、筒状電極内でグロー放電プラズマによって生成された荷電粒子は、筒状電極２１０の内外の圧力差により筒状電極頂部に設けた開口部（荷電粒子通過孔）２１１を通って外部に放出される。放出された荷電粒子はさらに筒状電極２１０に印加された電圧によって加速され、荷電粒子ビームとなる。筒状電極２１０に印加する電圧を操作することで、荷電粒子ビームのエネルギーを調節することが出来る。In order to generate charged particles, a gas as charged particles is supplied from the gas supply unit 201 into the cylindrical electrode 210 through the gas introduction pipe 204 and the gas introduction pipe 205. By applying a positive voltage to the cylindrical electrode 210 and a negative voltage to the rod-shaped electrode 206, glow discharge plasma is generated between both electrodes.
A voltage is applied to the rod-shaped electrode 206 and the cylindrical electrode 210 by the voltage applying units 232 and 230, respectively, and currents are measured by the current measuring units 233 and 231. The cylindrical electrode 210 and the rod-shaped electrode 206 are fixed to the charged particle generation chamber fixing plate 207 via the ceramic disk 208, and the cylindrical electrode 210 and the rod-shaped electrode 206 are insulated from the charged particle generation chamber fixing plate 207. Yes.
The charged particles generated by the glow discharge plasma in the cylindrical electrode due to the pressure difference between the inside and outside of the cylindrical electrode 210 cause the opening (charged particle passage) provided at the top of the cylindrical electrode due to the pressure difference between the inside and outside of the cylindrical electrode 210. Hole) 211 and discharged to the outside. The discharged charged particles are further accelerated by the voltage applied to the cylindrical electrode 210 to become a charged particle beam. By manipulating the voltage applied to the cylindrical electrode 210, the energy of the charged particle beam can be adjusted.

図３はイオンビーム（荷電粒子ビーム）のエネルギー分布図である。陰極（棒状電極）の印加電圧を一定として、陽極（筒状電極）の印加電圧を高くすると、イオンビームの分布のピークエネルギーは高くなる。二次電子放出率測定装置には、低エネルギーかつ半値幅の小さい荷電粒子ビームが適しており、図３に示す分布はこれに当たる。
また、真空チャンバー２０３は気体排気部２２４によって真空引きしており、真空計２２５によって所定の真空度を制御している。この際、荷電粒子通過孔２１１の孔径を真空チャンバー内の真空度に合わせて調節することで、低真空領域から高真空領域下で荷電粒子ビームを生成することができる。FIG. 3 is an energy distribution diagram of an ion beam (charged particle beam). When the applied voltage of the cathode (bar electrode) is constant and the applied voltage of the anode (tubular electrode) is increased, the peak energy of the ion beam distribution is increased. A charged particle beam having a low energy and a small half-value width is suitable for the secondary electron emission rate measuring apparatus, and the distribution shown in FIG. 3 corresponds to this.
The vacuum chamber 203 is evacuated by a gas exhaust unit 224, and a predetermined degree of vacuum is controlled by a vacuum gauge 225. At this time, the charged particle beam can be generated from the low vacuum region to the high vacuum region by adjusting the hole diameter of the charged particle passage hole 211 according to the degree of vacuum in the vacuum chamber.

静電レンズ２１２、２１６は接地され、静電レンズ２１４は電圧印加部２２９により電圧を印加されている。荷電粒子ビームは静電レンズ２１２、２１４、２１６によって収束され、被測定物質２２０へ照射される。
生成された荷電粒子ビーム中には電子が含まれているが、荷電粒子ビームが静電レンズ２１２、２１４、２１６を通過する際に、空間電位によってそれらの電子が取り除かれる。
また、被測定物質２２０から放出された二次電子が二次電子コレクター電極２１９に捕捉されず、二次電子コレクター電極２１９の孔からとび出る場合があるが、これらの電子は静電レンズ２１２、２１４、２１６による空間電位によって押し戻され、二次電子コレクター電極２１９によって捕捉される。The electrostatic lenses 212 and 216 are grounded, and the electrostatic lens 214 is applied with a voltage by the voltage application unit 229. The charged particle beam is converged by the electrostatic lenses 212, 214, and 216, and irradiated to the measurement target material 220.
Although the generated charged particle beam includes electrons, when the charged particle beam passes through the electrostatic lenses 212, 214, and 216, the electrons are removed by the space potential.
In addition, secondary electrons emitted from the substance 220 to be measured may not be captured by the secondary electron collector electrode 219 and may jump out of the holes of the secondary electron collector electrode 219. It is pushed back by the space potential by 214 and 216 and is captured by the secondary electron collector electrode 219.

荷電粒子ビームが照射されることにより、試料保持部２２１に固定された被測定物質２２０から二次電子が放出されるが、この二次電子は二次電子コレクター電極２１９に電圧印加部２２７から正電圧を印加することで捕捉され、その電子の量は電流測定部２２８によって電流量として測定される。また、被測定物質に流れる電流は電流測定部２２６によって測定される。二次電子コレクター電極２１９は、確実に被測定物質２２０からの二次電子を確実に捕捉できるようにターゲットを覆うような形状をしている。   By irradiating the charged particle beam, secondary electrons are emitted from the substance 220 to be measured fixed to the sample holder 221. The secondary electrons are positively applied to the secondary electron collector electrode 219 from the voltage application unit 227. Captured by applying a voltage, the amount of electrons is measured by the current measuring unit 228 as a current amount. Further, the current flowing through the substance to be measured is measured by the current measuring unit 226. The secondary electron collector electrode 219 is shaped to cover the target so that the secondary electrons from the substance 220 to be measured can be reliably captured.

上記構成の中で、荷電粒子生成源２０５−２０８、２１０、静電レンズ２１２、２１４、２１６、および二次電子コレクター部２１８、２１９は絶縁性スペーサー２０９、２１３、２１５、２１７によって接続され、小型二次電子測定ユニットとしてユニット化されている。
また、小型二次電子ユニットと試料保持部２２１を真空チャンバー２０３に収納、設置した構成を二次電子測定部と呼ぶ。In the above configuration, the charged particle generation sources 205-208 and 210, the electrostatic lenses 212, 214 and 216, and the secondary electron collector units 218 and 219 are connected by insulating spacers 209, 213, 215 and 217, and are compact. It is unitized as a secondary electron measurement unit.
A configuration in which the small secondary electron unit and the sample holding unit 221 are housed and installed in the vacuum chamber 203 is referred to as a secondary electron measurement unit.

真空チャンバー２０３内を減圧にする気体排気部２２４のバルブ２２３、荷電粒子生成源に荷電粒子となるガスを供給する気体供給部２０１のバルブ２０２、真空計２２５、電圧印加部、２２７、２２９、２３０、２３２、電流測定部２２６、２２８、２３１、２３３の制御及び／又は信号入出力は制御コンピュータ２３４で一括して行われる。以下に制御コンピュータ２３４の制御で行われる二次電子放出率の測定フローを述べる。   A valve 223 of a gas exhaust unit 224 for depressurizing the inside of the vacuum chamber 203, a valve 202 of a gas supply unit 201 for supplying a gas as a charged particle to a charged particle generation source, a vacuum gauge 225, a voltage application unit, 227, 229, 230 232, the current measuring units 226, 228, 231, 233 are controlled and / or input / output by the control computer 234 in a lump. The measurement flow of the secondary electron emission rate performed under the control of the control computer 234 will be described below.

最初にバルブ２２３を開き真空チャンバー２０３の真空を引き、その真空度を真空計２２５により測定する。所定の真空度に達すると、バルブ２０２を開き荷電粒子にする気体を所定の流量で供給する。電圧印加部２３０、２３２を操作して筒状電極２１０及び棒状電極２０６に電圧を印加させ、グロー放電プラズマを生成して荷電粒子ビームを放出する。グロー放電プラズマを生成後、電圧印加部２２９を操作し静電レンズ２１４に電圧を印加し、ビームを収束させる。   First, the valve 223 is opened, the vacuum in the vacuum chamber 203 is drawn, and the degree of vacuum is measured by the vacuum gauge 225. When the predetermined degree of vacuum is reached, the valve 202 is opened, and a gas for forming charged particles is supplied at a predetermined flow rate. The voltage application units 230 and 232 are operated to apply a voltage to the cylindrical electrode 210 and the rod electrode 206 to generate glow discharge plasma and emit a charged particle beam. After the glow discharge plasma is generated, the voltage application unit 229 is operated to apply a voltage to the electrostatic lens 214 to converge the beam.

荷電粒子ビームが安定するまでの電流量の時間変化を図４に示す。図４の測定条件は、筒状電極：１５０Ｖ、棒状電極：−３００Ｖ、チャンバー真空度：３．９×１０−３Ｐａである。イオンビーム（荷電粒子ビーム）電流は約１２ｎＡと従来のイオンビーム電流に比べ極めて低い値で安定している。また、イオンビームが安定するまでに６０秒程度が必要である。
荷電粒子ビームが安定後、電圧印加部２２７を操作して二次電子コレクター電極２１９に電圧を印加し、被測定物質２２０から放出される二次電子を捕捉し、電流測定部２２８によって電流量（Ａ）として測定される。同時に、被測定物質に流れる電流量（Ｂ）を電流測定部２２６によって測定する。二次電子放出率はＡ／（Ｂ−Ａ）として求められる。電流測定部２２６、２２８によって測定される二次電子電流量の二次電子コレクターへの印加電圧に対する変化がシステム制御コンピュータ２３４を通じて出力される。
図５は二次電子の電流およびターゲット（被測定物質）の電流のコレクター電圧（二次電子コレクター電極印加電圧）依存性の一例である。図５は筒状電極が１５０Ｖ、棒状電極が−３００Ｖ、チャンバー真空度が３．９×１０−３Ｐａ、荷電粒子ビームとしてＮｅ＋を用いた条件でＭｇＯの二次電子放出率を測定したデータである。コレクター印加電圧が２０Ｖ以上の場合は、二次電子電流およびターゲット電流量は概ね一定であり、二次電子が確実に捕捉されていることが分かる。また図５において荷電粒子ビーム量は１１ｎＡ程度であり、従来の技術に比べ大幅に低減されていることが分かる。これより、研究室等において全自動で被測定物質の二次電子放出率を容易に測定することが出来る。
図６は、本発明の二次電子放出率測定システムを用いて様々な被測定物質に対する二次電子放出率を求めた実験データである。これらは、筒状電極への印加電圧が１５０Ｖ、棒状電極への印加電圧が−３００Ｖ、荷電粒子ビームがＮｅ＋、チャンバー内真空度が３．９×１０−３Ｐａという測定条件の下に得られたデータである。FIG. 4 shows the change over time in the amount of current until the charged particle beam is stabilized. The measurement conditions in FIG. 4 are a cylindrical electrode: 150 V, a rod-shaped electrode: −300 V, and a chamber vacuum degree: 3.9 × 10 −3 Pa. The ion beam (charged particle beam) current is about 12 nA, which is stable at an extremely low value compared to the conventional ion beam current. Also, it takes about 60 seconds for the ion beam to stabilize.
After the charged particle beam is stabilized, the voltage application unit 227 is operated to apply a voltage to the secondary electron collector electrode 219 to capture secondary electrons emitted from the substance 220 to be measured. Measured as A). At the same time, the current measurement unit 226 measures the amount of current (B) flowing through the substance to be measured. The secondary electron emission rate is obtained as A / (BA). Changes in the amount of secondary electron current measured by the current measuring units 226 and 228 with respect to the voltage applied to the secondary electron collector are output through the system control computer 234.
FIG. 5 shows an example of the dependence of the secondary electron current and the target (substance to be measured) current on the collector voltage (secondary electron collector electrode applied voltage). FIG. 5 shows data obtained by measuring the secondary electron emission rate of MgO under the conditions that the cylindrical electrode is 150 V, the rod-shaped electrode is −300 V, the chamber vacuum is 3.9 × 10 −3 Pa, and Ne + is used as the charged particle beam. It is. It can be seen that when the collector applied voltage is 20 V or more, the secondary electron current and the target current amount are substantially constant, and the secondary electrons are reliably captured. In FIG. 5, the charged particle beam amount is about 11 nA, which is significantly reduced as compared with the conventional technique. Thus, the secondary electron emission rate of the substance to be measured can be easily measured in a laboratory or the like fully automatically.
FIG. 6 shows experimental data obtained by using the secondary electron emission rate measurement system of the present invention to determine secondary electron emission rates for various substances to be measured. These are obtained under the measurement conditions that the applied voltage to the cylindrical electrode is 150 V, the applied voltage to the rod-shaped electrode is −300 V, the charged particle beam is Ne + , and the vacuum in the chamber is 3.9 × 10 −3 Pa. Data.

荷電粒子生成源において筒状電極と棒状電極への印加電圧の正負を逆転することにより、荷電粒子ビームを正イオンビームから電子ビームへ変更することができ、さらに静電レンズへの印加電圧の正負も逆転することで、電子ビームを照射した場合の二次電子放出率の測定が可能となる。これより、同じ装置を用いて正イオンビーム照射による二次電子放出率と電子ビーム照射による二次電子放出率の二種類の物理的性質を測定することができる。
ＰＤＰの場合は主にイオン導出型二次電子放出に着目されているが、一般にはイオン導出型二次電子放出と電子導出型二次電子放出の両方とも非常に重要な物理現象である。特に電子導出型二次電子放出に関する論文はイオン導出型二次電子放出に関するそれよりも圧倒的に発表数が多い。従って被測定物の電子導出型二次電子放出率を測定することにより、装置の較正を行うことが出来る。結果、被測定物のイオン導出型二次電子放出率の測定値への信頼性が向上する。The charged particle beam can be changed from a positive ion beam to an electron beam by reversing the sign of the applied voltage to the cylindrical electrode and the rod-shaped electrode in the charged particle generation source, and the sign of the applied voltage to the electrostatic lens can be changed. Also, the secondary electron emission rate can be measured when the electron beam is irradiated. Thus, two types of physical properties can be measured using the same apparatus, that is, the secondary electron emission rate by the positive ion beam irradiation and the secondary electron emission rate by the electron beam irradiation.
In the case of PDP, attention is focused mainly on ion-derived secondary electron emission, but generally both ion-derived secondary electron emission and electron-derived secondary electron emission are very important physical phenomena. In particular, there are overwhelmingly more publications on electron-derived secondary electron emission than on ion-derived secondary electron emission. Therefore, the apparatus can be calibrated by measuring the electron-derived secondary electron emission rate of the object to be measured. As a result, the reliability of the measured value of the ion derivation type secondary electron emission rate of the object to be measured is improved.

また、試料保持部２２１に複数の試料を保持し、試料保持部を、棒状電極の長手方向に対し垂直な平面上を移動させる駆動部を試料保持部に更に設け、この駆動部を制御コンピュータで制御して、複数の試料が順次小型二次電子測定ユニットと対向する位置にくるように試料保持部を移動させ、複数の被測定物質の二次電子放出率を順次測定することができる。研究施設等の精密実験において、被測定物質毎に測定チャンバーの真空を破ることなく、一度の試料装填で複数個の被測定物質の二次電子放出率を全自動で測定可能となるので、実験時間を短縮することが可能である。   The sample holder 221 further holds a plurality of samples, and the sample holder is further provided with a drive unit that moves the sample holder on a plane perpendicular to the longitudinal direction of the rod-shaped electrode. It is possible to sequentially measure the secondary electron emission rates of a plurality of substances to be measured by moving the sample holder so that the plurality of samples sequentially come to a position facing the small secondary electron measurement unit by controlling. In precision experiments at research facilities, etc., it is possible to fully automatically measure the secondary electron emission rate of multiple substances to be measured without loading the vacuum of the measurement chamber for each substance to be measured. It is possible to shorten the time.

上記、実施例では主としてＰＤＰの保護膜の二次電子放出率を測定するのに適した構成を説明したが、小型二次電子測定ユニットは様々な荷電粒子照射の必要な装置に適用できる。   In the above-described embodiments, the configuration suitable for mainly measuring the secondary electron emission rate of the protective film of the PDP has been described. However, the small secondary electron measurement unit can be applied to apparatuses that require various charged particle irradiations.

Claims (6)

頂部に開口部を有す筒状電極と前記筒状電極の中心軸部に設けた棒状電極と荷電粒子となる気体を導入する気体導入管とを備え、前記筒状電極と棒状電極間のグロー放電プラズマによって荷電粒子を生成し、前記開口部から放出する荷電粒子生成源と、前記開口部から放出された荷電粒子のビームを収束させ被測定物に照射する静電レンズと、被測定物質から放出される二次電子を捕捉するための二次電子コレクター電極とからなる小型二次電子測定ユニットと、被測定物を保持する試料保持部とを真空チャンバー内に備えた二次電子測定部と、
前記真空チャンバー内を減圧にする気体排気部と、
前記荷電粒子生成源に荷電粒子となるガスを供給する気体供給部と、
前記荷電粒子生成源、静電レンズ及び二次電子コレクター部に電圧を印加し、電流を測定する電圧印加部と電流測定部と、
これらを制御し、二次電子放出率を算出する制御コンピュータと、
から構成されることを特徴とする二次電子放出率測定装置。A cylindrical electrode having an opening at the top; a rod-shaped electrode provided at a central shaft portion of the cylindrical electrode; and a gas introduction tube for introducing a gas as a charged particle; a glow between the cylindrical electrode and the rod-shaped electrode A charged particle generating source that generates charged particles by discharge plasma and emits the charged particles from the opening, an electrostatic lens that converges a beam of charged particles emitted from the opening and irradiates the measured object, and a measured substance A secondary electron measuring unit comprising a small secondary electron measuring unit comprising a secondary electron collector electrode for capturing emitted secondary electrons, and a sample holding unit for holding an object to be measured; ,
A gas exhaust unit for reducing the pressure in the vacuum chamber;
A gas supply unit for supplying a gas to be charged particles to the charged particle generation source;
A voltage application unit and a current measurement unit for applying a voltage to the charged particle generation source, the electrostatic lens, and the secondary electron collector unit, and measuring a current;
A control computer for controlling these and calculating the secondary electron emission rate;
A secondary electron emission rate measuring device comprising: 前記荷電粒子生成源は、前記制御コンピュータの制御により前記気体供給部からガスを導入させ、前記電圧印加部により筒状電極に正電圧と棒状電極に負電圧を印加してグロー放電プラズマを生成することにより荷電粒子を生成し、前記気体排気部により真空チャンバーを減圧して筒状電極の頂部開口部より圧力差によって押し出された荷電粒子を筒状電極に印加された電圧によって加速させる構造であることを特徴とする請求項１に記載の二次電子放出率測定装置。   The charged particle generation source generates a glow discharge plasma by introducing a gas from the gas supply unit under the control of the control computer and applying a positive voltage to the cylindrical electrode and a negative voltage to the rod electrode by the voltage application unit. In this structure, charged particles are generated, and the vacuum chamber is depressurized by the gas exhaust part, and the charged particles pushed out by the pressure difference from the top opening of the cylindrical electrode are accelerated by the voltage applied to the cylindrical electrode. The secondary electron emission rate measuring apparatus according to claim 1. 前記静電レンズは、空間電位により前記荷電粒子のビームを収束させると同時に、荷電粒子生成源からの荷電粒子のビーム中の電子を反射・除去し、二次電子コレクター電極で捉えきれなかった放出二次電子を二次電子コレクター電極に戻すように構成されることを特徴とする請求項１に記載の二次電子放出率測定装置。   The electrostatic lens converges the charged particle beam by a spatial potential, and at the same time, reflects and removes electrons in the charged particle beam from the charged particle generation source, and cannot be captured by the secondary electron collector electrode. The secondary electron emission rate measuring device according to claim 1, wherein the secondary electron emission rate measuring device is configured to return the secondary electrons to the secondary electron collector electrode. 前記制御コンピュータの制御により電圧印加部から前記荷電粒子生成源の筒状電極と棒状電極への印加電圧の極性を逆転して荷電粒子のビームを正イオンビームから電子ビームへ変更し、さらに静電レンズへの印加電圧の極性も逆転して、電子ビームを照射して二次電子放出率を測定することを特徴とする請求項１に記載の二次電子放出率測定装置。   Under the control of the control computer, the polarity of the voltage applied from the voltage application unit to the cylindrical electrode and rod electrode of the charged particle generation source is reversed to change the charged particle beam from a positive ion beam to an electron beam. 2. The secondary electron emission rate measuring apparatus according to claim 1, wherein the secondary electron emission rate is measured by irradiating an electron beam while reversing the polarity of the voltage applied to the lens. 前記二次電子測定部は複数の小型二次電子測定ユニットを備え、前記複数の小型二次電子測定ユニット又は試料保持部のいずれかを前記棒状電極に垂直な平面を移動させる駆動部を備え、前記制御コンピュータは前記駆動部を制御し、二次電子放出率の面分布を算出することを特徴とする請求項１乃至４のいずれか１項に記載の二次電子放出率測定装置。   The secondary electron measuring unit includes a plurality of small secondary electron measuring units, and includes a driving unit that moves a plurality of the small secondary electron measuring units or the sample holding unit in a plane perpendicular to the rod-shaped electrode, 5. The secondary electron emission rate measuring apparatus according to claim 1, wherein the control computer controls the driving unit to calculate a surface distribution of a secondary electron emission rate. 6. 前記試料保持部は複数の試料を保持し、前記試料保持部を前記棒状電極に垂直な平面を移動させる駆動部を備え、前記制御コンピュータは前記駆動部を制御し、前記複数の試料の二次電子放出率を順次算出することを特徴とする請求項１乃至４のいずれか１項に記載の二次電子放出率測定装置。   The sample holding unit includes a driving unit that holds a plurality of samples and moves the sample holding unit in a plane perpendicular to the rod-shaped electrode, and the control computer controls the driving unit, and the secondary of the plurality of samples. The secondary electron emission rate measuring apparatus according to claim 1, wherein the electron emission rate is sequentially calculated.
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