JPWO2003037503A1 - Microwave plasma generator - Google Patents

Microwave plasma generator Download PDF

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JPWO2003037503A1
JPWO2003037503A1 JP2003539837A JP2003539837A JPWO2003037503A1 JP WO2003037503 A1 JPWO2003037503 A1 JP WO2003037503A1 JP 2003539837 A JP2003539837 A JP 2003539837A JP 2003539837 A JP2003539837 A JP 2003539837A JP WO2003037503 A1 JPWO2003037503 A1 JP WO2003037503A1
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microwave
cavity
power
filled
waveguide
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片山 秀雄
秀雄 片山
節 安斎
節 安斎
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節 安斎
節 安斎
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32211Means for coupling power to the plasma
    • H01J37/32229Waveguides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

不活性ガスを充填した任意形状のキャビテイ1の側面Aの内壁側に高周波誘電体損失の少ない誘電材を石英ケースに充填したマイクロ波整合体3を設け、同じく、キャビテイ1の側面Bの内壁側にマイクロ波反射板4を設け、キャビテイ1の側面C、Dに金属管6、7を接続、この金属管6、7間に石英管5を接続して、キャビテイ1の内部に設けたことである。A microwave matching body 3 in which a quartz case is filled with a dielectric material having a low high-frequency dielectric loss is provided on the inner wall side of the side surface A of the arbitrarily shaped cavity 1 filled with an inert gas. Provided with a microwave reflector 4, metal tubes 6 and 7 connected to the side surfaces C and D of the cavity 1, and a quartz tube 5 connected between the metal tubes 6 and 7 and provided inside the cavity 1. is there.

Description

技術分野
本発明は、マイクロ波プラズマ発生装置に関する。
背景技術
従来、マイクロ波プラズマ発生装置でのプラズマの発生は導波管の内部で行われており、このためにプラズマを利用する目的に応じて、導波管のインピーダンスを整合する整合装置が必要になり、また負荷として使用する箇所の導波管の内部は真空状態なので、大電力を必要とする場合は、使用する導波管部分の体積を大型にして導波管内の放電破壊を防止するが、負荷に対するインピーダンスの整合が難しくなるので、希望電力より少ない電力で実施せざるを得ない欠点がある。特に、マイクロ波プラズマでダイヤモンド材を生成する電力は、周波数が2,45GHzでは、マイクロ波出力電力は700Wが限度の状態である。
これは、ダイヤモンド生成用の導波管内部を真空状態にし、必要な素材とガスを封入するが、使用ガスは生成用ガスなので、放電防止用にはならない。
したがって、ダイヤモンドの生成は困難で、2cm以上の製作は無理である。
発明の開示
プラズマを発生するマイクロ波の出力電力を負荷の状態に関係なく大きく放射して、目的の負荷に照射することである。
不活性ガスを充填した任意形状の金属材からなるキャビテイの側面Aの内壁側に高周波誘電体損失の少ない誘電材を石英ケースに充填したマイクロ波整合体を設け、キャビテイの側面Bの内壁側にマイクロ波反射板を設け、キャビテイの側面C、Dに接続した金属管の間に石英管をキャビテイの内部に接続、キャビテイの側面Aに導波管のホーンを接続したことである。
発明の実施の形態について図面を参照して説明する。
図1、図2及び図3は、マイクロ波プラズマ発生装置の平面図を示す。
一例として窒素不活発性ガスを充填したキャビテイ1の側面Aの内壁側近くに高周波誘電体損失の少ない誘電材である二酸化チタン材又は、電気石材からなる粉体、粒子材を封入した石英ケース3を設け、同じキャビテイ1の側面Bの内面にマイクロ波反射板4を設け、キャビテイ1の側面C、Dにキャビテイ1の内部に設けてある石英管5に接続する金属材管6,7を接続してある。
また、キャビテイ1の側面Aの外壁には、導波管2のホーン2Aを接続してある。
導波管2のホーン2Aからマイクロ波が放射されると、キャビテイ1の側面Aの内壁近くに設けてある前記の高周波誘電体損失の少ない誘電体を石英ケースに充填したマイクロ波整合体3により、マイクロ波は図4に示す様にホーン2Aから放射されたマイクロ波はレンズ特性を示しマイクロ波がビーム特性を持ち、キャビテイ1の側面Bの内壁に設けたマイクロ波反射板4に補放射されて、図5に示すビーム特性になり、このマイクロ波ビームはキャビテイ1の内部に設けてある石英管5の中心部に放射される。したがって、マイクロ波整合体3で得られたマイクロ波ビーム電力はマイクロ波反射板の焦点に設けた石英管5に放射されることになる。
図4に示すマイクロ波放射特性は、ホーン2Aからのマイクロ波整合体3によりマイクロ波をビーム状にした電力図であり、マイクロ波整合体3からの中心部0のマイクロ波電力は約5dBiを示し、中心部0点の左右2、4、6cmの間隔でマイクロ波の出力電力は順次減衰していく。
図5に示すマイクロ波放射特性は、マイクロ波反射板4によりマイクロ波をビーム状にした電力図であり、マイクロ波の中心部0のマイクロ波の電力は約16dBiであり、中心部0点の左右3、6、8cmの間隔で順次減衰していく。
したがって、マイクロ波整合体3とマイクロ波反射板4とにより、ホーン2Aより放射されたマイクロ波電力は一点に集中されるので、必要により小電力のマイクロ波発振器で十分な出力が得られる。
また、キャビテイ1の内部に充填した不活発性ガスのために、ホーン2Aから放射された大電力マイクロ波によるキャビテイ1の内部が放電破壊状態になることはない。
石英管5に接続してある金属管6、7を使用して、石英管5の内部を真空状態にしたり、各種のガスを石英管5の内部に充填することが出来る。
また、他の応用例として、廃棄物の処理後に発生する有害廃棄ガスを石英管5の内部に送入してマイクロ波で有害廃棄ガスを分解、熱エネルギー化にして有害廃棄ガスを無害化にすることが出来る。
産業上の利用可能性
マイクロ波電力とマイクロ波の照射環境に関係無く、希望のマイクロ波処理を石英管内で実施することが出来る。
また、マイクロ波をビーム状にすることにより、小電力のマイクロ波発振器で大電力のマイクロ波電力を得ることが出来る。
【図面の簡単な説明】
図1は、本発明の平面図である。
図2は、本発明の側面図である。
図3は、本発明の斜視図である。
図4は、マイクロ波整合体のマイクロ波放射特性を示す図である。
図5は、マイクロ波反射板のマイクロ波放射特性を示す図である。
符号の説明 1・・・キャビテイ 2・・・導波管 2A・・・ホーン 3・・・マイクロ波整合体 4・・・マイクロ波反射板 5・・・石英管 6、7・・・金属管 A、B・・・側面 C、D・・・側面
TECHNICAL FIELD The present invention relates to a microwave plasma generator.
2. Description of the Related Art Conventionally, generation of plasma in a microwave plasma generator is performed inside a waveguide, and for this purpose, a matching device that matches the impedance of the waveguide is required according to the purpose of using the plasma. Since the inside of the waveguide where it is used as a load is in a vacuum state, if a large amount of power is required, the volume of the waveguide portion to be used is increased to prevent discharge breakdown in the waveguide. However, since it is difficult to match the impedance to the load, there is a disadvantage that it must be performed with less power than desired power. In particular, the electric power for generating the diamond material by the microwave plasma has a limit of 700 W for the microwave output power at a frequency of 2,45 GHz.
This is because the inside of the waveguide for generating diamond is evacuated and necessary materials and gas are enclosed, but since the used gas is a generating gas, it does not serve to prevent discharge.
Therefore, it is difficult to produce diamond, and it is impossible to produce 2 cm 2 or more.
DISCLOSURE OF THE INVENTION An object of the present invention is to irradiate a target load by radiating a large output power of a microwave that generates plasma irrespective of a load state.
A microwave matching body in which a quartz case is filled with a dielectric material having a small high-frequency dielectric loss is provided on the inner wall side of the side surface A of the cavity made of an arbitrarily-shaped metal material filled with an inert gas, This is that a microwave reflector is provided, a quartz tube is connected to the inside of the cavity between the metal tubes connected to the side surfaces C and D of the cavity, and a waveguide horn is connected to the side surface A of the cavity.
Embodiments of the invention will be described with reference to the drawings.
1, 2 and 3 show plan views of the microwave plasma generator.
As an example, a quartz case 3 in which a titanium dioxide material, which is a dielectric material with low high-frequency dielectric loss, or a powder or particle material made of tourmaline material is enclosed near the inner wall side of the side surface A of the cavity 1 filled with a nitrogen inert gas. The microwave reflector 4 is provided on the inner surface of the side surface B of the same cavity 1, and the metal material pipes 6 and 7 connected to the quartz tube 5 provided inside the cavity 1 are connected to the side surfaces C and D of the cavity 1. It is.
A horn 2 </ b> A of the waveguide 2 is connected to the outer wall of the side surface A of the cavity 1.
When microwaves are radiated from the horn 2A of the waveguide 2, the microwave matching body 3 in which a quartz body is filled with the above-mentioned dielectric having a low high-frequency dielectric loss provided near the inner wall of the side surface A of the cavity 1 is used. As shown in FIG. 4, the microwave emitted from the horn 2A exhibits lens characteristics, and the microwave has beam characteristics, and is supplemented to the microwave reflector 4 provided on the inner wall of the side surface B of the cavity 1. Thus, the beam characteristics shown in FIG. 5 are obtained, and this microwave beam is radiated to the center of the quartz tube 5 provided inside the cavity 1. Therefore, the microwave beam power obtained by the microwave matching body 3 is radiated to the quartz tube 5 provided at the focal point of the microwave reflector.
The microwave radiation characteristic shown in FIG. 4 is a power diagram in which a microwave is made into a beam shape by the microwave matching body 3 from the horn 2A, and the microwave power of the central portion 0 from the microwave matching body 3 is about 5 dBi. As shown, the output power of the microwave is attenuated sequentially at intervals of 2, 4, and 6 cm on the left and right of the center 0 point.
The microwave radiation characteristic shown in FIG. 5 is a power diagram in which a microwave is made into a beam by the microwave reflector 4, and the microwave power at the center 0 of the microwave is about 16 dBi. It attenuates sequentially at intervals of 3, 6, and 8 cm on the left and right.
Therefore, the microwave power radiated from the horn 2A is concentrated at one point by the microwave matching body 3 and the microwave reflector 4, so that a sufficient output can be obtained with a low-power microwave oscillator if necessary.
Further, due to the inert gas filled in the interior of the cavity 1, the interior of the cavity 1 due to the high-power microwave radiated from the horn 2A will not be in a discharge destruction state.
Using the metal tubes 6 and 7 connected to the quartz tube 5, the inside of the quartz tube 5 can be evacuated or various gases can be filled into the quartz tube 5.
As another application example, hazardous waste gas generated after waste treatment is sent into the quartz tube 5 to decompose the hazardous waste gas with microwaves and convert it into heat energy to make the hazardous waste gas harmless. I can do it.
Industrial Applicability Regardless of the microwave power and microwave irradiation environment, the desired microwave treatment can be performed in the quartz tube.
Further, by making the microwave into a beam shape, a high-power microwave power can be obtained with a low-power microwave oscillator.
[Brief description of the drawings]
FIG. 1 is a plan view of the present invention.
FIG. 2 is a side view of the present invention.
FIG. 3 is a perspective view of the present invention.
FIG. 4 is a diagram showing the microwave radiation characteristics of the microwave matching body.
FIG. 5 is a diagram showing the microwave radiation characteristics of the microwave reflector.
DESCRIPTION OF SYMBOLS 1 ... Cavity 2 ... Waveguide 2A ... Horn 3 ... Microwave matching body 4 ... Microwave reflector 5 ... Quartz tube 6, 7 ... Metal tube A, B ... Side C, D ... Side

Claims (1)

不活発性ガスを充填した任意形状の金属材からなるキャビテイ(1)の側面(A)の内壁側に高周波誘電体損失の少ない誘電材を石英ケースに充填したマイクロ波整合体(3)を設け、側面(B)の内壁側にマイクロ波反射板(4)を設け、前記キャビテイ(1)の側面(C、D)に接続された金属管(6、7)間に石英管(5)を前記キャビテイ(1)の内部に接続、前記キャビテイ(1)の側面(A)の外面に導波管(2)のホーン(2A)を接続してなるマイクロ波プラズマ発生装置。A microwave matching body (3) in which a quartz case is filled with a dielectric material with low high-frequency dielectric loss is provided on the inner wall side of the side surface (A) of the cavity (1) made of a metal material having an arbitrary shape filled with inert gas. The microwave reflector (4) is provided on the inner wall side of the side surface (B), and the quartz tube (5) is interposed between the metal tubes (6, 7) connected to the side surfaces (C, D) of the cavity (1). A microwave plasma generator comprising: a horn (2A) of a waveguide (2) connected to the inside of the cavity (1) and an outer surface of the side surface (A) of the cavity (1).
JP2003539837A 2001-10-30 2001-10-30 Microwave plasma generator Pending JPWO2003037503A1 (en)

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PCT/JP2001/009497 WO2003037503A1 (en) 2001-10-30 2001-10-30 Microwave plasma generating apparatus

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Publication number Priority date Publication date Assignee Title
JP4878782B2 (en) * 2005-07-05 2012-02-15 シャープ株式会社 Plasma processing apparatus and plasma processing method
CN112584599B (en) * 2020-12-08 2021-09-17 四川大学 Efficient microwave plasma torch

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JPS63214346A (en) * 1987-02-27 1988-09-07 Sumitomo Metal Ind Ltd Plasma processing apparatus
US5234526A (en) * 1991-05-24 1993-08-10 Lam Research Corporation Window for microwave plasma processing device
US5902404A (en) * 1997-03-04 1999-05-11 Applied Materials, Inc. Resonant chamber applicator for remote plasma source

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