JPS6490549A - Wiring method for metallic oxide film semiconductor type high breakdown-voltage driver - Google Patents
Wiring method for metallic oxide film semiconductor type high breakdown-voltage driverInfo
- Publication number
- JPS6490549A JPS6490549A JP24883387A JP24883387A JPS6490549A JP S6490549 A JPS6490549 A JP S6490549A JP 24883387 A JP24883387 A JP 24883387A JP 24883387 A JP24883387 A JP 24883387A JP S6490549 A JPS6490549 A JP S6490549A
- Authority
- JP
- Japan
- Prior art keywords
- high breakdown
- oxide film
- type high
- voltage transistor
- film semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the lowering of the breakdown-voltage of a high breakdown-voltage transistor by passing one part of a metallic wiring only on a gate for the high breakdown-voltage transistor, holding an oxide film. CONSTITUTION:A high breakdown-voltage transistor having offset gate structure is composed of a polysilicon gate 7, a drain 5, a source 6 and a low concentration ion implanting layer 8. Metallic wirings 10 are passed only on the gate 7, holding an oxide film 2. Consequently, the wirings 10 interrupt an effect on the high breakdown-voltage transistor. Accordingly, the lowering of the breakdown-voltage of the high breakdown-voltage transistor can be obviated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62248833A JP2712196B2 (en) | 1987-10-01 | 1987-10-01 | Semiconductor integrated device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62248833A JP2712196B2 (en) | 1987-10-01 | 1987-10-01 | Semiconductor integrated device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6490549A true JPS6490549A (en) | 1989-04-07 |
JP2712196B2 JP2712196B2 (en) | 1998-02-10 |
Family
ID=17184101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62248833A Expired - Lifetime JP2712196B2 (en) | 1987-10-01 | 1987-10-01 | Semiconductor integrated device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2712196B2 (en) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5890755A (en) * | 1981-11-25 | 1983-05-30 | Nec Corp | Semiconductor device |
JPS58166773A (en) * | 1982-03-09 | 1983-10-01 | ア−ルシ−エ− コ−ポレ−ション | Floating gate memory device |
JPS6051325A (en) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS6195545A (en) * | 1984-10-17 | 1986-05-14 | Hitachi Ltd | Semiconductor ic device |
JPS61251162A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Structure of semiconductor resistor device |
JPS6290948A (en) * | 1985-06-20 | 1987-04-25 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPS63202941A (en) * | 1987-02-18 | 1988-08-22 | Nec Corp | Wiring path for semiconductor device |
-
1987
- 1987-10-01 JP JP62248833A patent/JP2712196B2/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5890755A (en) * | 1981-11-25 | 1983-05-30 | Nec Corp | Semiconductor device |
JPS58166773A (en) * | 1982-03-09 | 1983-10-01 | ア−ルシ−エ− コ−ポレ−ション | Floating gate memory device |
JPS6051325A (en) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS6195545A (en) * | 1984-10-17 | 1986-05-14 | Hitachi Ltd | Semiconductor ic device |
JPS61251162A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Structure of semiconductor resistor device |
JPS6290948A (en) * | 1985-06-20 | 1987-04-25 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPS63202941A (en) * | 1987-02-18 | 1988-08-22 | Nec Corp | Wiring path for semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP2712196B2 (en) | 1998-02-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1357515A (en) | Method for manufacturing an mos integrated circuit | |
GB1526679A (en) | Method of making a field effect transistor device | |
JPS5626467A (en) | Semiconductor device and the manufacturing process | |
JPS5662356A (en) | Logic integrated circuit device and its manufacturing method | |
EP0239250A3 (en) | Short channel mos transistor | |
JPS6490549A (en) | Wiring method for metallic oxide film semiconductor type high breakdown-voltage driver | |
JPS56165359A (en) | Semiconductor device | |
EP0414400A3 (en) | Mosfet depletion device | |
JPS57204171A (en) | Semiconductor device | |
JPS522289A (en) | Method of manufacturing insulation gate-type semiconductor integration circuit device | |
JPS5772386A (en) | Junction type field-effect semiconductor device | |
JPS55130170A (en) | Semiconductor device and method of fabricating the same | |
JPS57164573A (en) | Semiconductor device | |
JPS6419768A (en) | Semiconductor integrated circuit device | |
JPS641275A (en) | Semiconductor device | |
JPS6437058A (en) | Insulated-gate field-effect transistor | |
JPS54127289A (en) | Semiconductor integrated circuit device and its manufacture | |
JPS5286086A (en) | Field effect transistor | |
JPS5214380A (en) | Method for production of silicon gate mos transistor | |
JPS57141966A (en) | Manufacture of semiconductor device | |
JPS6464364A (en) | Semiconductor device and its manufacture | |
JPS6459849A (en) | Manufacture of semiconductor device | |
JPS6437059A (en) | Manufacture of semiconductor device | |
JPS57201080A (en) | Semiconductor device | |
JPS54114982A (en) | Manufacture for complementary isolation gate field effect semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |