JPS6484558A - Gas pressure controller for ion implantating device - Google Patents

Gas pressure controller for ion implantating device

Info

Publication number
JPS6484558A
JPS6484558A JP62240738A JP24073887A JPS6484558A JP S6484558 A JPS6484558 A JP S6484558A JP 62240738 A JP62240738 A JP 62240738A JP 24073887 A JP24073887 A JP 24073887A JP S6484558 A JPS6484558 A JP S6484558A
Authority
JP
Japan
Prior art keywords
pressure
low pressure
pipe
gas
valves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62240738A
Other languages
Japanese (ja)
Inventor
Takehiko Yanagida
Akira Yasukawa
Takashi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62240738A priority Critical patent/JPS6484558A/en
Publication of JPS6484558A publication Critical patent/JPS6484558A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent pressure in a low pressure pipe from suddenly rising the moment a valve is opened, by providing plural control valves and a throttle valve in series in a pipe for supplying gas to the wafer rear face. CONSTITUTION:The pressure in a low pressure pipe 1 is measured by a pressuring instrument 5 and if the pressure is lower than the specified pressure, control valves 2, 3 open and gas flows in from the gas source 6. A throttle valve 4 is provided so that the high pressure gas may not flow suddenly into a low pressure pipe 1 at this time. When the pressure in the low pressure pipe 1 rises, the control valves 2, 3 close by the signal from the measuring instrument 5. At this time, the pressure between the valves 2, 3 become vacuum. Gas is not left between the valves 2, 3 when the pressure in the low pressure pipe 1 has lowered and the valves 2, 3 have opened again, and it flows into the low pressure pipe with its flow being controlled by the throttle device 4. Hereby the pressure in the low pressure pipe 1 never rises suddenly.
JP62240738A 1987-09-28 1987-09-28 Gas pressure controller for ion implantating device Pending JPS6484558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62240738A JPS6484558A (en) 1987-09-28 1987-09-28 Gas pressure controller for ion implantating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240738A JPS6484558A (en) 1987-09-28 1987-09-28 Gas pressure controller for ion implantating device

Publications (1)

Publication Number Publication Date
JPS6484558A true JPS6484558A (en) 1989-03-29

Family

ID=17063966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62240738A Pending JPS6484558A (en) 1987-09-28 1987-09-28 Gas pressure controller for ion implantating device

Country Status (1)

Country Link
JP (1) JPS6484558A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012513092A (en) * 2008-12-19 2012-06-07 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド Condensable gas cooling system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012513092A (en) * 2008-12-19 2012-06-07 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド Condensable gas cooling system

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