JPS6482686A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6482686A JPS6482686A JP24211887A JP24211887A JPS6482686A JP S6482686 A JPS6482686 A JP S6482686A JP 24211887 A JP24211887 A JP 24211887A JP 24211887 A JP24211887 A JP 24211887A JP S6482686 A JPS6482686 A JP S6482686A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- surround
- refractive index
- ohmic electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To reduce astigmatism and to improve condensing characteristic of a laser beam by forming a refractive index waveguide structure without optical absorption effect. CONSTITUTION:In a first MOCVD crystal growing step, an N-type Al0.4Ga0.6As layer 2, an Al0.05Ga0.95As layer 3 to become a light emitting region, a P-type Al0.4Ga0.6As layer 4, a P-type Al0.3Ga0.7As layer 10, a P-type Al0.5Ga0.5As layer 11 and a P-type GaAs layer 7 are sequentially formed on an N-type GaAs substrate 1. Then, in a normally frequently using step, a mesalike crystal laminate is formed. Thereafter, in a second MOCVD crystal growing step, gas etching is conducted immediately before a crystal growth to surround the mesa section, chemically etched surface is clarified, the layer 10 remaining except the mesa region is removed, an N-type Al0.5Ga0.5As layer 13 and an N-type GaAs layer 5 are sequentially formed to surround the mesa section. Eventually, after an SiO2 film 12 is removed, a P-type ohmic electrode 8 and an N-type ohmic electrode 9 are formed. Thus, a refractive index waveguide mechanism is formed without optical absorption effect, thereby obtaining an optical beam having less astigmatism and excellent condensing characteristic.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24211887A JPS6482686A (en) | 1987-09-25 | 1987-09-25 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24211887A JPS6482686A (en) | 1987-09-25 | 1987-09-25 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6482686A true JPS6482686A (en) | 1989-03-28 |
Family
ID=17084564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24211887A Pending JPS6482686A (en) | 1987-09-25 | 1987-09-25 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6482686A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03204986A (en) * | 1990-01-05 | 1991-09-06 | Sumitomo Electric Ind Ltd | Semiconductor laser element |
JP2010157511A (en) * | 2003-01-16 | 2010-07-15 | Japan Science & Technology Agency | High-frequency power supply device and plasma generator |
-
1987
- 1987-09-25 JP JP24211887A patent/JPS6482686A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03204986A (en) * | 1990-01-05 | 1991-09-06 | Sumitomo Electric Ind Ltd | Semiconductor laser element |
JP2010157511A (en) * | 2003-01-16 | 2010-07-15 | Japan Science & Technology Agency | High-frequency power supply device and plasma generator |
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