JPS6482550A - Surface treatment - Google Patents

Surface treatment

Info

Publication number
JPS6482550A
JPS6482550A JP23883587A JP23883587A JPS6482550A JP S6482550 A JPS6482550 A JP S6482550A JP 23883587 A JP23883587 A JP 23883587A JP 23883587 A JP23883587 A JP 23883587A JP S6482550 A JPS6482550 A JP S6482550A
Authority
JP
Japan
Prior art keywords
metal
metal halide
substrate
temperature
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23883587A
Other languages
Japanese (ja)
Other versions
JP2558738B2 (en
Inventor
Keiji Horioka
Haruo Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62238835A priority Critical patent/JP2558738B2/en
Publication of JPS6482550A publication Critical patent/JPS6482550A/en
Application granted granted Critical
Publication of JP2558738B2 publication Critical patent/JP2558738B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To remove a thin film of a metal oxide or carbide adhering to the surface of a metal without causing corrosion of the metal itself, by converting the metal having the oxide or carbide on the surface thereof once into a metal halide having a relatively high evaporation pressure and then removing the metal halide. CONSTITUTION:A substrate to be treated having aluminum interconnections 22 with residual matters 24 is disposed on a susceptor 12 of a vacuum vessel 11. A treating gas containing halogen such as BCl3 or the like is introduced in the vessel and a metal halide 25 is once deposited on the substrate by means of a reaction accelerating means using electric discharge. A temperature of the substrate is held at a temperature equal to or below the evaporation or sublimation temperature of the metal halide so that the reaction is inhibited from progressing into the metal. Then, the treating gas is exhaused and the substrate is heated to a temperature equal to or over the evaporation or sublimation temperature of the metal halide so that the metal halide 25 is removed. This removing process causes no corrosion since it is performed after exhausting the halogen.
JP62238835A 1987-09-25 1987-09-25 Surface treatment method Expired - Lifetime JP2558738B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62238835A JP2558738B2 (en) 1987-09-25 1987-09-25 Surface treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62238835A JP2558738B2 (en) 1987-09-25 1987-09-25 Surface treatment method

Publications (2)

Publication Number Publication Date
JPS6482550A true JPS6482550A (en) 1989-03-28
JP2558738B2 JP2558738B2 (en) 1996-11-27

Family

ID=17035981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62238835A Expired - Lifetime JP2558738B2 (en) 1987-09-25 1987-09-25 Surface treatment method

Country Status (1)

Country Link
JP (1) JP2558738B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07230993A (en) * 1994-02-15 1995-08-29 Nec Corp Wiring forming method of semiconductor device
JPH07326606A (en) * 1995-01-30 1995-12-12 Hitachi Ltd Sample treatment
JPH088236A (en) * 1995-01-30 1996-01-12 Hitachi Ltd Sample treatment method
JPH088235A (en) * 1995-01-30 1996-01-12 Hitachi Ltd Sample treatment method
CN111566786A (en) * 2017-12-14 2020-08-21 应用材料公司 Method for etching metal oxide with less etching residue

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593927A (en) * 1982-06-29 1984-01-10 Fujitsu Ltd Etching of thin film
JPS61147530A (en) * 1984-12-21 1986-07-05 Toshiba Corp Reactive ion etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593927A (en) * 1982-06-29 1984-01-10 Fujitsu Ltd Etching of thin film
JPS61147530A (en) * 1984-12-21 1986-07-05 Toshiba Corp Reactive ion etching method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07230993A (en) * 1994-02-15 1995-08-29 Nec Corp Wiring forming method of semiconductor device
JPH07326606A (en) * 1995-01-30 1995-12-12 Hitachi Ltd Sample treatment
JPH088236A (en) * 1995-01-30 1996-01-12 Hitachi Ltd Sample treatment method
JPH088235A (en) * 1995-01-30 1996-01-12 Hitachi Ltd Sample treatment method
CN111566786A (en) * 2017-12-14 2020-08-21 应用材料公司 Method for etching metal oxide with less etching residue
CN111566786B (en) * 2017-12-14 2024-03-15 应用材料公司 Method for etching metal oxide with less etching residue

Also Published As

Publication number Publication date
JP2558738B2 (en) 1996-11-27

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