JPS6482550A - Surface treatment - Google Patents
Surface treatmentInfo
- Publication number
- JPS6482550A JPS6482550A JP23883587A JP23883587A JPS6482550A JP S6482550 A JPS6482550 A JP S6482550A JP 23883587 A JP23883587 A JP 23883587A JP 23883587 A JP23883587 A JP 23883587A JP S6482550 A JPS6482550 A JP S6482550A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal halide
- substrate
- temperature
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To remove a thin film of a metal oxide or carbide adhering to the surface of a metal without causing corrosion of the metal itself, by converting the metal having the oxide or carbide on the surface thereof once into a metal halide having a relatively high evaporation pressure and then removing the metal halide. CONSTITUTION:A substrate to be treated having aluminum interconnections 22 with residual matters 24 is disposed on a susceptor 12 of a vacuum vessel 11. A treating gas containing halogen such as BCl3 or the like is introduced in the vessel and a metal halide 25 is once deposited on the substrate by means of a reaction accelerating means using electric discharge. A temperature of the substrate is held at a temperature equal to or below the evaporation or sublimation temperature of the metal halide so that the reaction is inhibited from progressing into the metal. Then, the treating gas is exhaused and the substrate is heated to a temperature equal to or over the evaporation or sublimation temperature of the metal halide so that the metal halide 25 is removed. This removing process causes no corrosion since it is performed after exhausting the halogen.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62238835A JP2558738B2 (en) | 1987-09-25 | 1987-09-25 | Surface treatment method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62238835A JP2558738B2 (en) | 1987-09-25 | 1987-09-25 | Surface treatment method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6482550A true JPS6482550A (en) | 1989-03-28 |
JP2558738B2 JP2558738B2 (en) | 1996-11-27 |
Family
ID=17035981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62238835A Expired - Lifetime JP2558738B2 (en) | 1987-09-25 | 1987-09-25 | Surface treatment method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2558738B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07230993A (en) * | 1994-02-15 | 1995-08-29 | Nec Corp | Wiring forming method of semiconductor device |
JPH07326606A (en) * | 1995-01-30 | 1995-12-12 | Hitachi Ltd | Sample treatment |
JPH088236A (en) * | 1995-01-30 | 1996-01-12 | Hitachi Ltd | Sample treatment method |
JPH088235A (en) * | 1995-01-30 | 1996-01-12 | Hitachi Ltd | Sample treatment method |
CN111566786A (en) * | 2017-12-14 | 2020-08-21 | 应用材料公司 | Method for etching metal oxide with less etching residue |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS593927A (en) * | 1982-06-29 | 1984-01-10 | Fujitsu Ltd | Etching of thin film |
JPS61147530A (en) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | Reactive ion etching method |
-
1987
- 1987-09-25 JP JP62238835A patent/JP2558738B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS593927A (en) * | 1982-06-29 | 1984-01-10 | Fujitsu Ltd | Etching of thin film |
JPS61147530A (en) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | Reactive ion etching method |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07230993A (en) * | 1994-02-15 | 1995-08-29 | Nec Corp | Wiring forming method of semiconductor device |
JPH07326606A (en) * | 1995-01-30 | 1995-12-12 | Hitachi Ltd | Sample treatment |
JPH088236A (en) * | 1995-01-30 | 1996-01-12 | Hitachi Ltd | Sample treatment method |
JPH088235A (en) * | 1995-01-30 | 1996-01-12 | Hitachi Ltd | Sample treatment method |
CN111566786A (en) * | 2017-12-14 | 2020-08-21 | 应用材料公司 | Method for etching metal oxide with less etching residue |
CN111566786B (en) * | 2017-12-14 | 2024-03-15 | 应用材料公司 | Method for etching metal oxide with less etching residue |
Also Published As
Publication number | Publication date |
---|---|
JP2558738B2 (en) | 1996-11-27 |
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Legal Events
Date | Code | Title | Description |
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Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20070905 |
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FPAY | Renewal fee payment (prs date is renewal date of database) |
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EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20080905 |