JPS6481366A - Thin film transistor and manufacture thereof - Google Patents
Thin film transistor and manufacture thereofInfo
- Publication number
- JPS6481366A JPS6481366A JP23964587A JP23964587A JPS6481366A JP S6481366 A JPS6481366 A JP S6481366A JP 23964587 A JP23964587 A JP 23964587A JP 23964587 A JP23964587 A JP 23964587A JP S6481366 A JPS6481366 A JP S6481366A
- Authority
- JP
- Japan
- Prior art keywords
- tft
- manufacture
- layer
- hydrogenating
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 5
- 239000010408 film Substances 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To largely reduce a damage of a thin film transistor (TFT) in a step of hydrogenating, and to manufacture a high performance scanning circuit with good reproducibility by composing a polycrystalline silicon layer so as to insularly isolate it. CONSTITUTION:This TFT has a structure in which a polysilicon layer 102 formed on an insulating substrate 101 is insularly isolated, and the manufacture has the steps of so pattern-forming the layer 102 as to isolate the TFTs, forming a gate insulating film 103, a gate electrode 104, source, drain regions 105 and an interlayer insulating film 106, hydrogenating the layer 102 by a method, such as hydrogen plasma processing, hydrogen ion implanting, etc., and opening a contact hole 107 at the film 106 and forming a wiring pattern 108. The silicon layers are isolated at each TFT to eliminate a damage in the step of hydrogenating by hydrogen plasma processing, hydrogen ion implanting, etc., and a high performance TFT scanning circuit is manufactured with good reproducibility.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62239645A JP2867136B2 (en) | 1987-09-24 | 1987-09-24 | Thin film transistor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62239645A JP2867136B2 (en) | 1987-09-24 | 1987-09-24 | Thin film transistor device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9330622A Division JP3065004B2 (en) | 1997-12-01 | 1997-12-01 | Scanning circuit manufacturing method |
| JP27373898A Division JP3065033B2 (en) | 1998-09-28 | 1998-09-28 | Thin film transistor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6481366A true JPS6481366A (en) | 1989-03-27 |
| JP2867136B2 JP2867136B2 (en) | 1999-03-08 |
Family
ID=17047792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62239645A Expired - Lifetime JP2867136B2 (en) | 1987-09-24 | 1987-09-24 | Thin film transistor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2867136B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0728092A (en) * | 1993-07-08 | 1995-01-31 | Nec Corp | Production of driving circuit built-in type liquid crystal display device |
| KR100233803B1 (en) * | 1995-10-09 | 1999-12-01 | 마찌다 가쯔히꼬 | Thin film transistor and the manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143375A (en) * | 1982-02-19 | 1983-08-25 | セイコーエプソン株式会社 | Liquid display panel |
| JPS6058675A (en) * | 1983-09-12 | 1985-04-04 | Seiko Epson Corp | Manufacture of thin film semiconductor device |
| JPS60164363A (en) * | 1984-02-07 | 1985-08-27 | Seiko Epson Corp | Manufacture of thin film transistor |
| JPS6263466A (en) * | 1985-09-13 | 1987-03-20 | Fujitsu Ltd | Semiconductor device |
-
1987
- 1987-09-24 JP JP62239645A patent/JP2867136B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143375A (en) * | 1982-02-19 | 1983-08-25 | セイコーエプソン株式会社 | Liquid display panel |
| JPS6058675A (en) * | 1983-09-12 | 1985-04-04 | Seiko Epson Corp | Manufacture of thin film semiconductor device |
| JPS60164363A (en) * | 1984-02-07 | 1985-08-27 | Seiko Epson Corp | Manufacture of thin film transistor |
| JPS6263466A (en) * | 1985-09-13 | 1987-03-20 | Fujitsu Ltd | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0728092A (en) * | 1993-07-08 | 1995-01-31 | Nec Corp | Production of driving circuit built-in type liquid crystal display device |
| KR100233803B1 (en) * | 1995-10-09 | 1999-12-01 | 마찌다 가쯔히꼬 | Thin film transistor and the manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2867136B2 (en) | 1999-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071225 Year of fee payment: 9 |