JPS6481344A - Bump and formation thereof - Google Patents

Bump and formation thereof

Info

Publication number
JPS6481344A
JPS6481344A JP62239817A JP23981787A JPS6481344A JP S6481344 A JPS6481344 A JP S6481344A JP 62239817 A JP62239817 A JP 62239817A JP 23981787 A JP23981787 A JP 23981787A JP S6481344 A JPS6481344 A JP S6481344A
Authority
JP
Japan
Prior art keywords
film
nickel
semiconductor element
layer
precipitated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62239817A
Other languages
Japanese (ja)
Other versions
JP2633580B2 (en
Inventor
Koji Yamakawa
Nobuo Iwase
Michihiko Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62239817A priority Critical patent/JP2633580B2/en
Priority to EP88115732A priority patent/EP0308971B1/en
Priority to US07/248,101 priority patent/US4970571A/en
Priority to KR1019880012331A priority patent/KR910006949B1/en
Priority to DE88115732T priority patent/DE3885834T2/en
Publication of JPS6481344A publication Critical patent/JPS6481344A/en
Application granted granted Critical
Publication of JP2633580B2 publication Critical patent/JP2633580B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Abstract

PURPOSE:To obtain a bump having a stable shape and high reliability without adverse influence on the substrate and aluminum electrodes of a semiconductor element by forming a laminated layer structure of a layer containing palladium and a bump material precipitated by electroless plating. CONSTITUTION:A layer 141 containing Pd is adhered to the surface of an aluminum electrode 12 exposed by dipping a semiconductor element in palladium solution. Then, a nickel film 151 containing phosphorus is precipitated as a bump material on the periphery including the electrode 12 exposed by dipping in an electroless nickel plating bath to be electrolessly nickel plated. A layer 142 containing palladium is adhered onto the precipitated film 151, the semiconductor element is dipped in the plating bath to be electrolessly nickel plated, thereby precipitating a nickel film 152 on the film 151.
JP62239817A 1987-09-24 1987-09-24 Bump, bump forming method, and semiconductor element Expired - Fee Related JP2633580B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62239817A JP2633580B2 (en) 1987-09-24 1987-09-24 Bump, bump forming method, and semiconductor element
EP88115732A EP0308971B1 (en) 1987-09-24 1988-09-23 Bump and method of manufacturing the same
US07/248,101 US4970571A (en) 1987-09-24 1988-09-23 Bump and method of manufacturing the same
KR1019880012331A KR910006949B1 (en) 1987-09-24 1988-09-23 Bump and method for bump manufactured
DE88115732T DE3885834T2 (en) 1987-09-24 1988-09-23 Soldering point and method of accomplishing it.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62239817A JP2633580B2 (en) 1987-09-24 1987-09-24 Bump, bump forming method, and semiconductor element

Publications (2)

Publication Number Publication Date
JPS6481344A true JPS6481344A (en) 1989-03-27
JP2633580B2 JP2633580B2 (en) 1997-07-23

Family

ID=17050288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62239817A Expired - Fee Related JP2633580B2 (en) 1987-09-24 1987-09-24 Bump, bump forming method, and semiconductor element

Country Status (1)

Country Link
JP (1) JP2633580B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US6028011A (en) * 1997-10-13 2000-02-22 Matsushita Electric Industrial Co., Ltd. Method of forming electric pad of semiconductor device and method of forming solder bump
US7390732B1 (en) 1997-07-15 2008-06-24 Hitachi, Ltd. Method for producing a semiconductor device with pyramidal bump electrodes bonded onto pad electrodes arranged on a semiconductor chip
JP2014060379A (en) * 2012-08-24 2014-04-03 Tdk Corp Terminal structure and semiconductor element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5790963A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Manufacture of semiconductor device
JPS6041235A (en) * 1983-08-15 1985-03-04 Seiko Epson Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5790963A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Manufacture of semiconductor device
JPS6041235A (en) * 1983-08-15 1985-03-04 Seiko Epson Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US7390732B1 (en) 1997-07-15 2008-06-24 Hitachi, Ltd. Method for producing a semiconductor device with pyramidal bump electrodes bonded onto pad electrodes arranged on a semiconductor chip
US6028011A (en) * 1997-10-13 2000-02-22 Matsushita Electric Industrial Co., Ltd. Method of forming electric pad of semiconductor device and method of forming solder bump
JP2014060379A (en) * 2012-08-24 2014-04-03 Tdk Corp Terminal structure and semiconductor element

Also Published As

Publication number Publication date
JP2633580B2 (en) 1997-07-23

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees