JPS6481262A - Active matrix substrate - Google Patents

Active matrix substrate

Info

Publication number
JPS6481262A
JPS6481262A JP23831687A JP23831687A JPS6481262A JP S6481262 A JPS6481262 A JP S6481262A JP 23831687 A JP23831687 A JP 23831687A JP 23831687 A JP23831687 A JP 23831687A JP S6481262 A JPS6481262 A JP S6481262A
Authority
JP
Japan
Prior art keywords
groove
film
pixel
polycrystalline silicon
silicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23831687A
Other languages
Japanese (ja)
Other versions
JP2568857B2 (en
Inventor
Mutsumi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP23831687A priority Critical patent/JP2568857B2/en
Publication of JPS6481262A publication Critical patent/JPS6481262A/en
Application granted granted Critical
Publication of JP2568857B2 publication Critical patent/JP2568857B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Abstract

PURPOSE:To obtain a high-quality display whose unevenness in a contrast at an upper part and a lower part is small and whose unevenness in a contrast at each pixel is small by a method wherein a groove is made in an insulating substrate and pixel-adding capacitance is constituted inside the groove in order to obtain a retention characteristic of a sufficient pixel potential. CONSTITUTION:A groove 11 is made in an insulating substrate. For this operation, an ordinary isotropic etching operation may be used; however, when a deep and narrow groove is to be formed, it is sufficient to execute a dry isotropic etching operation. Then, a first polycrystalline silicon thin film 12 which has been doped with an impurity is deposited; while the film inside the groove 11 and a common line 6 are left, the film in other parts is removed by a patterning operation. Then, the polycrystalline silicon thin film 12 is thermally oxidized; an insulating oxide film 13 for pixel-adding capacitance use is formed; after that, a second polycrystalline silicon thin film 14 which has been doped with an impurity is deposited in order to fill the inside of the groove 11. Then, a semiconductor thin film 2 to be used for a thin-film transistor is deposited and patterned in order to form a gate insulating film 3. A two-layer conductive film used to constitute pixel-adding capacitance is composed of the polycrystalline silicon thin films which have been doped with the impurity; however, it may be composed of metal thin films; it is not always required that the groove 11 is filled; considering its flatness, the groove is preferably filled.
JP23831687A 1987-09-22 1987-09-22 Active matrix substrate Expired - Lifetime JP2568857B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23831687A JP2568857B2 (en) 1987-09-22 1987-09-22 Active matrix substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23831687A JP2568857B2 (en) 1987-09-22 1987-09-22 Active matrix substrate

Publications (2)

Publication Number Publication Date
JPS6481262A true JPS6481262A (en) 1989-03-27
JP2568857B2 JP2568857B2 (en) 1997-01-08

Family

ID=17028395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23831687A Expired - Lifetime JP2568857B2 (en) 1987-09-22 1987-09-22 Active matrix substrate

Country Status (1)

Country Link
JP (1) JP2568857B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0399846A2 (en) * 1989-05-26 1990-11-28 Sharp Kabushiki Kaisha An active-matrix display device and a method for the production of the same
EP0466495A2 (en) * 1990-07-12 1992-01-15 Kabushiki Kaisha Toshiba Liquid crystal display apparatus
JPH05265034A (en) * 1992-03-17 1993-10-15 Sharp Corp Grooved glass base
US5317432A (en) * 1991-09-04 1994-05-31 Sony Corporation Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel
US5846854A (en) * 1993-07-19 1998-12-08 Compagnie Generale D'innovation Et De Developpement Cogidev Electrical circuits with very high conductivity and high fineness, processes for fabricating them, and devices comprising them
WO1999028784A1 (en) * 1997-11-28 1999-06-10 Matsushita Electric Industrial Co., Ltd. Reflection-type display device and image device using reflection-type display device
JP2000081636A (en) * 1998-09-03 2000-03-21 Seiko Epson Corp Electrooptical device and its manufacture and electronic instrument
US6414345B1 (en) 1994-06-13 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including active matrix circuit
JP2003152086A (en) * 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd Semiconductor device
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
WO2011080987A1 (en) * 2009-12-29 2011-07-07 シャープ株式会社 Array substrate for liquid crystal panel and liquid crystal display device equipped with said substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437697A (en) * 1977-08-30 1979-03-20 Sharp Corp Liquid crystal display unit of matrix type

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437697A (en) * 1977-08-30 1979-03-20 Sharp Corp Liquid crystal display unit of matrix type

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0399846A2 (en) * 1989-05-26 1990-11-28 Sharp Kabushiki Kaisha An active-matrix display device and a method for the production of the same
EP0399846A3 (en) * 1989-05-26 1991-07-24 Sharp Kabushiki Kaisha An active-matrix display device and a method for the production of the same
EP0466495A2 (en) * 1990-07-12 1992-01-15 Kabushiki Kaisha Toshiba Liquid crystal display apparatus
US5187602A (en) * 1990-07-12 1993-02-16 Kabushiki Kaisha Toshiba Liquid crystal display apparatus
US5317432A (en) * 1991-09-04 1994-05-31 Sony Corporation Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel
JPH05265034A (en) * 1992-03-17 1993-10-15 Sharp Corp Grooved glass base
US5846854A (en) * 1993-07-19 1998-12-08 Compagnie Generale D'innovation Et De Developpement Cogidev Electrical circuits with very high conductivity and high fineness, processes for fabricating them, and devices comprising them
US6414345B1 (en) 1994-06-13 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including active matrix circuit
US6566684B1 (en) 1994-06-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Active matrix circuit having a TFT with pixel electrode as auxiliary capacitor
US7479657B2 (en) 1994-06-13 2009-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including active matrix circuit
US7161178B2 (en) 1994-06-13 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Display device having a pixel electrode through a second interlayer contact hole in a wider first contact hole formed over an active region of display switch
WO1999028784A1 (en) * 1997-11-28 1999-06-10 Matsushita Electric Industrial Co., Ltd. Reflection-type display device and image device using reflection-type display device
JP2000081636A (en) * 1998-09-03 2000-03-21 Seiko Epson Corp Electrooptical device and its manufacture and electronic instrument
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7242024B2 (en) 2001-01-17 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7808002B2 (en) 2001-01-17 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8779431B2 (en) 2001-01-17 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8952385B1 (en) 2001-01-17 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9171896B2 (en) 2001-01-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9324775B2 (en) 2001-01-17 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9679955B2 (en) 2001-01-17 2017-06-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9911801B2 (en) 2001-01-17 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US10263059B2 (en) 2001-01-17 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2003152086A (en) * 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd Semiconductor device
WO2011080987A1 (en) * 2009-12-29 2011-07-07 シャープ株式会社 Array substrate for liquid crystal panel and liquid crystal display device equipped with said substrate

Also Published As

Publication number Publication date
JP2568857B2 (en) 1997-01-08

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term