JPS6481257A - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device

Info

Publication number
JPS6481257A
JPS6481257A JP23817087A JP23817087A JPS6481257A JP S6481257 A JPS6481257 A JP S6481257A JP 23817087 A JP23817087 A JP 23817087A JP 23817087 A JP23817087 A JP 23817087A JP S6481257 A JPS6481257 A JP S6481257A
Authority
JP
Japan
Prior art keywords
face
protruding curved
angle
die bonding
intersecting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23817087A
Other languages
Japanese (ja)
Inventor
Ryoichi Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP23817087A priority Critical patent/JPS6481257A/en
Publication of JPS6481257A publication Critical patent/JPS6481257A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To sharply reduce a microcrack or a package crack at a plastic package by a method wherein an outside face of a die bonding plate at a lead frame is formed at a protruding curved surface. CONSTITUTION:An outside face 2a of a die bonding plate 2 at a lead frame 1 is formed at a protruding curved face (a radius face) and prevents a local stress from being caused (because the local stress is dispersed). Accordingly, microcracks or package cracks are not caused in a plastic package composed of sealing resin. In this case, a good result is obtained if a curved surface state (a radius) at the protruding curved face 2a is set in such a way that an angle thetaformed by an extension A and a tangent B extended through an intersecting point C from a position on the opposite side ot the intersecting point C is made larger than 180 deg. at the intersecting point C at the extension A of a plate face 8 of the die bonding plate 2 and at an end part of the protruding curved face 2a. Generally, if this angle is 120 deg. or larger, the same effect can be expected. However, if the angle is less than 120 deg., the effect becomes insufficient.
JP23817087A 1987-09-22 1987-09-22 Resin-sealed semiconductor device Pending JPS6481257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23817087A JPS6481257A (en) 1987-09-22 1987-09-22 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23817087A JPS6481257A (en) 1987-09-22 1987-09-22 Resin-sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPS6481257A true JPS6481257A (en) 1989-03-27

Family

ID=17026218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23817087A Pending JPS6481257A (en) 1987-09-22 1987-09-22 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS6481257A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0503072A1 (en) * 1990-09-10 1992-09-16 Fujitsu Limited Semiconductor device and its manufacturing process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0503072A1 (en) * 1990-09-10 1992-09-16 Fujitsu Limited Semiconductor device and its manufacturing process
US5440170A (en) * 1990-09-10 1995-08-08 Fujitsu Limited Semiconductor device having a die pad with rounded edges and its manufacturing method

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