JPS6481197A - Plasma processing power monitoring device - Google Patents

Plasma processing power monitoring device

Info

Publication number
JPS6481197A
JPS6481197A JP62237107A JP23710787A JPS6481197A JP S6481197 A JPS6481197 A JP S6481197A JP 62237107 A JP62237107 A JP 62237107A JP 23710787 A JP23710787 A JP 23710787A JP S6481197 A JPS6481197 A JP S6481197A
Authority
JP
Japan
Prior art keywords
voltage
peak
display
detector
envelop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62237107A
Other languages
Japanese (ja)
Inventor
Etsuro Watanabe
Fumikazu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62237107A priority Critical patent/JPS6481197A/en
Publication of JPS6481197A publication Critical patent/JPS6481197A/en
Pending legal-status Critical Current

Links

Landscapes

  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable a monitor device to perform a suitable monitor display by detecting an upper envelop and an lower envelop of high frequence components from a high frequency voltage applied to an electrode of a plasma generator, and by displaying DC component voltage of peak-to-peak voltage and high frequence voltage obtained. CONSTITUTION:At an upper electrode 104a of a plasma processor 1, voltage is generated by applying power to a processor chamber 104. The power is taken out, and upper and lower envelops are detected by a Vp<+> detector 33 and a Vp<-> detector 33 of an envelop detector 3 to compute peak-to-peak voltage of high frequency voltage by a voltage computing unit 4. A voltage display unit 5 displays DC component voltage of high frequency voltage obtained through the peak-to-peak voltage and an LPF 32. It is possible for an operator to proceed plasma processing properly while confirming the display of a display 5.
JP62237107A 1987-09-24 1987-09-24 Plasma processing power monitoring device Pending JPS6481197A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62237107A JPS6481197A (en) 1987-09-24 1987-09-24 Plasma processing power monitoring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62237107A JPS6481197A (en) 1987-09-24 1987-09-24 Plasma processing power monitoring device

Publications (1)

Publication Number Publication Date
JPS6481197A true JPS6481197A (en) 1989-03-27

Family

ID=17010516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62237107A Pending JPS6481197A (en) 1987-09-24 1987-09-24 Plasma processing power monitoring device

Country Status (1)

Country Link
JP (1) JPS6481197A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7217942B2 (en) 2002-08-22 2007-05-15 Tokyo Electron Limited Plasma leak monitoring method, plasma processing apparatus and plasma processing method
JP2008538852A (en) * 2005-04-22 2008-11-06 アドバンスト・エナジー・インダストリーズ・インコーポレイテッド Arc detection and handling in radio frequency power applications
JP2009048883A (en) * 2007-08-21 2009-03-05 Panasonic Corp Plasma treatment apparatus
US8585862B2 (en) 2007-08-21 2013-11-19 Panasonic Corporation Plasma processing device and plasma discharge state monitoring device
JP2014072043A (en) * 2012-09-28 2014-04-21 Daihen Corp High frequency power supply device and method of controlling the same
WO2021025076A1 (en) * 2019-08-06 2021-02-11 株式会社京三製作所 Pulsed high frequency monitor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7217942B2 (en) 2002-08-22 2007-05-15 Tokyo Electron Limited Plasma leak monitoring method, plasma processing apparatus and plasma processing method
JP2008538852A (en) * 2005-04-22 2008-11-06 アドバンスト・エナジー・インダストリーズ・インコーポレイテッド Arc detection and handling in radio frequency power applications
JP2009048883A (en) * 2007-08-21 2009-03-05 Panasonic Corp Plasma treatment apparatus
US8585862B2 (en) 2007-08-21 2013-11-19 Panasonic Corporation Plasma processing device and plasma discharge state monitoring device
JP2014072043A (en) * 2012-09-28 2014-04-21 Daihen Corp High frequency power supply device and method of controlling the same
WO2021025076A1 (en) * 2019-08-06 2021-02-11 株式会社京三製作所 Pulsed high frequency monitor
JP2021027495A (en) * 2019-08-06 2021-02-22 株式会社京三製作所 Pulsed high frequency monitor
US11852665B2 (en) 2019-08-06 2023-12-26 Kyosan Electric Mfg. Co., Ltd. Pulsed high frequency monitor

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