JPS647654A - Image reader and manufacture thereof - Google Patents
Image reader and manufacture thereofInfo
- Publication number
- JPS647654A JPS647654A JP62162578A JP16257887A JPS647654A JP S647654 A JPS647654 A JP S647654A JP 62162578 A JP62162578 A JP 62162578A JP 16257887 A JP16257887 A JP 16257887A JP S647654 A JPS647654 A JP S647654A
- Authority
- JP
- Japan
- Prior art keywords
- onto
- signal transfer
- transfer section
- layer
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To obtain a low-cost image reader, a read rate of which is increased sufficiently and which is mounted easily, by forming a signal transfer section, including a single crystal semiconductor layer shaped onto a nucleation surface, which is formed onto an insulating base body, consists of a material of a different kind and has enough fine size, and shaping a sensor section onto said signal transfer section. CONSTITUTION:A signal transfer section 32 is formed, including a single crystal semiconductor layer 8 shaped onto a nucleation surface, which is formed onto an insulating base body 4, is composed of a material of a different kind and has sufficiently fine size, and a sensor section 50 is formed onto said signal transfer section 32. An insulating layer 5 having small nucleation density is shaped onto the base body 4, N<+> regions 22, 24, 26 are formed to the single crystal semiconductor layer 8 such as P-type one grown onto the layer 5 through a selective nucleation method, and a thermal oxide film 28 and a gate electrode 30 are formed, thus shaping the signal transfer section 32 such as a MOS type switch element 32. An auxiliary electrode 58 an insulating layer 60, a photoconductive layer 34 made up of amorphous silicon and an N<+> layer 36 for an ohmic contact are formed onto the switch element 32, and electrodes 42, 44, 46 are shaped, thus constituting the photoconductivity type sensor section 50 and a capacitor 52 for charge storage in the signal transfer section.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62162578A JPS647654A (en) | 1987-06-30 | 1987-06-30 | Image reader and manufacture thereof |
US07/211,031 US4866291A (en) | 1987-06-30 | 1988-06-24 | Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film |
CA000570541A CA1323095C (en) | 1987-06-30 | 1988-06-27 | Photosensor |
EP19880110403 EP0297559A3 (en) | 1987-06-30 | 1988-06-29 | Photosensor |
US07/356,882 US4977096A (en) | 1987-06-30 | 1989-05-25 | Method of making a photosensor using selective epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62162578A JPS647654A (en) | 1987-06-30 | 1987-06-30 | Image reader and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS647654A true JPS647654A (en) | 1989-01-11 |
Family
ID=15757248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62162578A Pending JPS647654A (en) | 1987-06-30 | 1987-06-30 | Image reader and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS647654A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5285369A (en) * | 1992-09-01 | 1994-02-08 | Power Integrations, Inc. | Switched mode power supply integrated circuit with start-up self-biasing |
GB2415588A (en) * | 2002-02-28 | 2005-12-28 | Konishiroku Photo Ind | Radiation imaging apparatus having means to prevent shading of detectors |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5676546A (en) * | 1979-11-28 | 1981-06-24 | Fujitsu Ltd | Semiconductor device |
JPS6292365A (en) * | 1985-10-18 | 1987-04-27 | Fuji Photo Film Co Ltd | Semiconductor device and manufacture thereof |
-
1987
- 1987-06-30 JP JP62162578A patent/JPS647654A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5676546A (en) * | 1979-11-28 | 1981-06-24 | Fujitsu Ltd | Semiconductor device |
JPS6292365A (en) * | 1985-10-18 | 1987-04-27 | Fuji Photo Film Co Ltd | Semiconductor device and manufacture thereof |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5285369A (en) * | 1992-09-01 | 1994-02-08 | Power Integrations, Inc. | Switched mode power supply integrated circuit with start-up self-biasing |
GB2415588A (en) * | 2002-02-28 | 2005-12-28 | Konishiroku Photo Ind | Radiation imaging apparatus having means to prevent shading of detectors |
GB2415588B (en) * | 2002-02-28 | 2006-04-05 | Konica Corp | Radiation imaging apparatus and radiographing method for radiation imaging apparatus |
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