JPS647654A - Image reader and manufacture thereof - Google Patents

Image reader and manufacture thereof

Info

Publication number
JPS647654A
JPS647654A JP62162578A JP16257887A JPS647654A JP S647654 A JPS647654 A JP S647654A JP 62162578 A JP62162578 A JP 62162578A JP 16257887 A JP16257887 A JP 16257887A JP S647654 A JPS647654 A JP S647654A
Authority
JP
Japan
Prior art keywords
onto
signal transfer
transfer section
layer
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62162578A
Other languages
Japanese (ja)
Inventor
Satoru Itabashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62162578A priority Critical patent/JPS647654A/en
Priority to US07/211,031 priority patent/US4866291A/en
Priority to CA000570541A priority patent/CA1323095C/en
Priority to EP19880110403 priority patent/EP0297559A3/en
Publication of JPS647654A publication Critical patent/JPS647654A/en
Priority to US07/356,882 priority patent/US4977096A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To obtain a low-cost image reader, a read rate of which is increased sufficiently and which is mounted easily, by forming a signal transfer section, including a single crystal semiconductor layer shaped onto a nucleation surface, which is formed onto an insulating base body, consists of a material of a different kind and has enough fine size, and shaping a sensor section onto said signal transfer section. CONSTITUTION:A signal transfer section 32 is formed, including a single crystal semiconductor layer 8 shaped onto a nucleation surface, which is formed onto an insulating base body 4, is composed of a material of a different kind and has sufficiently fine size, and a sensor section 50 is formed onto said signal transfer section 32. An insulating layer 5 having small nucleation density is shaped onto the base body 4, N<+> regions 22, 24, 26 are formed to the single crystal semiconductor layer 8 such as P-type one grown onto the layer 5 through a selective nucleation method, and a thermal oxide film 28 and a gate electrode 30 are formed, thus shaping the signal transfer section 32 such as a MOS type switch element 32. An auxiliary electrode 58 an insulating layer 60, a photoconductive layer 34 made up of amorphous silicon and an N<+> layer 36 for an ohmic contact are formed onto the switch element 32, and electrodes 42, 44, 46 are shaped, thus constituting the photoconductivity type sensor section 50 and a capacitor 52 for charge storage in the signal transfer section.
JP62162578A 1987-06-30 1987-06-30 Image reader and manufacture thereof Pending JPS647654A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62162578A JPS647654A (en) 1987-06-30 1987-06-30 Image reader and manufacture thereof
US07/211,031 US4866291A (en) 1987-06-30 1988-06-24 Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film
CA000570541A CA1323095C (en) 1987-06-30 1988-06-27 Photosensor
EP19880110403 EP0297559A3 (en) 1987-06-30 1988-06-29 Photosensor
US07/356,882 US4977096A (en) 1987-06-30 1989-05-25 Method of making a photosensor using selective epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62162578A JPS647654A (en) 1987-06-30 1987-06-30 Image reader and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS647654A true JPS647654A (en) 1989-01-11

Family

ID=15757248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62162578A Pending JPS647654A (en) 1987-06-30 1987-06-30 Image reader and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS647654A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5285369A (en) * 1992-09-01 1994-02-08 Power Integrations, Inc. Switched mode power supply integrated circuit with start-up self-biasing
GB2415588A (en) * 2002-02-28 2005-12-28 Konishiroku Photo Ind Radiation imaging apparatus having means to prevent shading of detectors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676546A (en) * 1979-11-28 1981-06-24 Fujitsu Ltd Semiconductor device
JPS6292365A (en) * 1985-10-18 1987-04-27 Fuji Photo Film Co Ltd Semiconductor device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676546A (en) * 1979-11-28 1981-06-24 Fujitsu Ltd Semiconductor device
JPS6292365A (en) * 1985-10-18 1987-04-27 Fuji Photo Film Co Ltd Semiconductor device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5285369A (en) * 1992-09-01 1994-02-08 Power Integrations, Inc. Switched mode power supply integrated circuit with start-up self-biasing
GB2415588A (en) * 2002-02-28 2005-12-28 Konishiroku Photo Ind Radiation imaging apparatus having means to prevent shading of detectors
GB2415588B (en) * 2002-02-28 2006-04-05 Konica Corp Radiation imaging apparatus and radiographing method for radiation imaging apparatus

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