JPS647567A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS647567A
JPS647567A JP62162061A JP16206187A JPS647567A JP S647567 A JPS647567 A JP S647567A JP 62162061 A JP62162061 A JP 62162061A JP 16206187 A JP16206187 A JP 16206187A JP S647567 A JPS647567 A JP S647567A
Authority
JP
Japan
Prior art keywords
layer
impurity
diffusion layer
doped
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62162061A
Other languages
Japanese (ja)
Inventor
Masumitsu Ino
Taketo Osada
Masumi Shimada
Masaki Hiroi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Original Assignee
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Research Institute of General Electronics Co Ltd, Ricoh Co Ltd filed Critical Ricoh Research Institute of General Electronics Co Ltd
Priority to JP62162061A priority Critical patent/JPS647567A/en
Publication of JPS647567A publication Critical patent/JPS647567A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To enable the drive of a transistor of this design by high voltage by a method wherein a channel stopper layer doped with impurity of polarity opposite to that of impurity doped to a diffusion layer is formed adjacently to the diffusion layer on the part where a channel is to be formed. CONSTITUTION:The region, which is lightly doped with impurity of polarity opposite to that of high concentrated impurity doped into a diffusion layer 5, or A channel stopper layer 8 is formed on the part where a channel of a poly-Si layer 2 is built and the diffusion layer 5 is adjacent. Therefore, depletion layer becomes short in length W and it is hard to happen that current suddenly flows (breakdown state) even if high voltage is applied. By these processes, breakdown strength between a drain and a source is improved, and thus a transistor can be driven by high voltage.
JP62162061A 1987-06-29 1987-06-29 Mos transistor Pending JPS647567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62162061A JPS647567A (en) 1987-06-29 1987-06-29 Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62162061A JPS647567A (en) 1987-06-29 1987-06-29 Mos transistor

Publications (1)

Publication Number Publication Date
JPS647567A true JPS647567A (en) 1989-01-11

Family

ID=15747347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62162061A Pending JPS647567A (en) 1987-06-29 1987-06-29 Mos transistor

Country Status (1)

Country Link
JP (1) JPS647567A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04273445A (en) * 1991-02-28 1992-09-29 G T C:Kk Thin film semiconductor device and its production
JPH0521800A (en) * 1991-07-11 1993-01-29 Victor Co Of Japan Ltd Soimosfet
JPH07111333A (en) * 1993-08-20 1995-04-25 Casio Comput Co Ltd Thin film transistor, manufacture thereof, and input or output device equipped therewith
US6049092A (en) * 1993-09-20 2000-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR100262099B1 (en) * 1991-03-08 2000-07-15 가나이 쓰도무 Semiconductor memory device
US6259120B1 (en) 1993-10-01 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US6489632B1 (en) * 1993-01-18 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a gate oxide film
US6777763B1 (en) 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04273445A (en) * 1991-02-28 1992-09-29 G T C:Kk Thin film semiconductor device and its production
KR100262099B1 (en) * 1991-03-08 2000-07-15 가나이 쓰도무 Semiconductor memory device
JPH0521800A (en) * 1991-07-11 1993-01-29 Victor Co Of Japan Ltd Soimosfet
US6489632B1 (en) * 1993-01-18 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a gate oxide film
US6995432B2 (en) 1993-01-18 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions
JPH07111333A (en) * 1993-08-20 1995-04-25 Casio Comput Co Ltd Thin film transistor, manufacture thereof, and input or output device equipped therewith
US6049092A (en) * 1993-09-20 2000-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6867431B2 (en) 1993-09-20 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6259120B1 (en) 1993-10-01 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US6777763B1 (en) 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same

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