JPS647559A - Contact type image sensor - Google Patents

Contact type image sensor

Info

Publication number
JPS647559A
JPS647559A JP62308396A JP30839687A JPS647559A JP S647559 A JPS647559 A JP S647559A JP 62308396 A JP62308396 A JP 62308396A JP 30839687 A JP30839687 A JP 30839687A JP S647559 A JPS647559 A JP S647559A
Authority
JP
Japan
Prior art keywords
driving circuit
section
photoelectric conversion
transparent substrate
selector switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62308396A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Kobata
Masumitsu Ino
Taketo Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Original Assignee
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Research Institute of General Electronics Co Ltd, Ricoh Co Ltd filed Critical Ricoh Research Institute of General Electronics Co Ltd
Priority to JP62308396A priority Critical patent/JPS647559A/en
Publication of JPS647559A publication Critical patent/JPS647559A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To contrive reduction of the area of a driving circuit by a method wherein there exists electrical isolation between a plurality of photoelectric conversion elements formed into a line, a selector switch section for the elements, and a photoelectric conversion element driving circuit section, and all of them are installed on one and the same transparent substrate, and a driving circuit is constituted of a CMOS transistor. CONSTITUTION:A line of photoelectric conversion elements, a selector switch section 4, and a photoelectric conversion element driving circuit section 3 are electrically isolated from each other, constructed on one and the same transparent substrate 1. The driving circuit section 3 is built of a CMOS transistor. In this way, a photodetecting section 2, a driving circuit section 3, a selector switch section 4, and connecting metal electrodes 5 are installed on and the same transparent substrate 1, which enables compacting a sensor unit.
JP62308396A 1987-02-12 1987-12-04 Contact type image sensor Pending JPS647559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62308396A JPS647559A (en) 1987-02-12 1987-12-04 Contact type image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3008087 1987-02-12
JP62308396A JPS647559A (en) 1987-02-12 1987-12-04 Contact type image sensor

Publications (1)

Publication Number Publication Date
JPS647559A true JPS647559A (en) 1989-01-11

Family

ID=26368365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62308396A Pending JPS647559A (en) 1987-02-12 1987-12-04 Contact type image sensor

Country Status (1)

Country Link
JP (1) JPS647559A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574976B2 (en) 1995-03-23 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2023084131A (en) * 2007-07-27 2023-06-16 株式会社半導体エネルギー研究所 Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60164351A (en) * 1984-02-07 1985-08-27 Seiko Epson Corp Shift register
JPS61277251A (en) * 1985-05-31 1986-12-08 Matsushita Electric Ind Co Ltd Image information inputting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60164351A (en) * 1984-02-07 1985-08-27 Seiko Epson Corp Shift register
JPS61277251A (en) * 1985-05-31 1986-12-08 Matsushita Electric Ind Co Ltd Image information inputting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574976B2 (en) 1995-03-23 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2023084131A (en) * 2007-07-27 2023-06-16 株式会社半導体エネルギー研究所 Semiconductor device
JP2023113750A (en) * 2007-07-27 2023-08-16 株式会社半導体エネルギー研究所 Semiconductor device

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