JPS6474718A - Plasma cvd device for semiconductor - Google Patents
Plasma cvd device for semiconductorInfo
- Publication number
- JPS6474718A JPS6474718A JP23287487A JP23287487A JPS6474718A JP S6474718 A JPS6474718 A JP S6474718A JP 23287487 A JP23287487 A JP 23287487A JP 23287487 A JP23287487 A JP 23287487A JP S6474718 A JPS6474718 A JP S6474718A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- supply voltage
- voltage control
- control parts
- heater part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce a difference in film quality by providing the heater part divided into plural regions corresponding to the wafers set on a wafer holder and plural supply voltage control parts independently controlling each region of the heater part. CONSTITUTION:The heater part 2 is divided into three regions 3a, 3b and 3c corresponding to the sample base carrier openings 7a and 7b of a chamber 1 so as to be independently connected to the supply voltage control parts 5a, 5b and 5c respectively. At the time of deposition treatment, the beforehand controlled output is supplied from the respective supply voltage control parts 5a, 5b and 5c to the respective heaters 3a, 3b and 3c to heat a wafer 9 set on a wafer holder 14 for removing temperature difference between the inside of the wafer 9 and the wafer 9 on the sample base 8 so as to be controlled at the uniform temperature. Thereby, a difference in film quality inside the wafer 9 and among themselves can be reduced less than a half compared with the past.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23287487A JPS6474718A (en) | 1987-09-17 | 1987-09-17 | Plasma cvd device for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23287487A JPS6474718A (en) | 1987-09-17 | 1987-09-17 | Plasma cvd device for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6474718A true JPS6474718A (en) | 1989-03-20 |
Family
ID=16946184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23287487A Pending JPS6474718A (en) | 1987-09-17 | 1987-09-17 | Plasma cvd device for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6474718A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999040497A1 (en) * | 1998-02-03 | 1999-08-12 | Komatsu Ltd. | Temperature controller for zone division heater |
| JP2013074247A (en) * | 2011-09-29 | 2013-04-22 | Sumitomo Heavy Ind Ltd | Laser annealing device, and laser annealing method |
| JP2013074246A (en) * | 2011-09-29 | 2013-04-22 | Sumitomo Heavy Ind Ltd | Laser annealing device, laser annealing method, and stage |
-
1987
- 1987-09-17 JP JP23287487A patent/JPS6474718A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999040497A1 (en) * | 1998-02-03 | 1999-08-12 | Komatsu Ltd. | Temperature controller for zone division heater |
| JP2013074247A (en) * | 2011-09-29 | 2013-04-22 | Sumitomo Heavy Ind Ltd | Laser annealing device, and laser annealing method |
| JP2013074246A (en) * | 2011-09-29 | 2013-04-22 | Sumitomo Heavy Ind Ltd | Laser annealing device, laser annealing method, and stage |
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