JPS6473000A - Heat treatment of gallium arsenide single crystal - Google Patents
Heat treatment of gallium arsenide single crystalInfo
- Publication number
- JPS6473000A JPS6473000A JP23169487A JP23169487A JPS6473000A JP S6473000 A JPS6473000 A JP S6473000A JP 23169487 A JP23169487 A JP 23169487A JP 23169487 A JP23169487 A JP 23169487A JP S6473000 A JPS6473000 A JP S6473000A
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- single crystal
- gallium arsenide
- crystal
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To uniformize the electrical characteristics of a gallium arsenide single crystal by heating the ingot of the gallium arsenide single crystal to a high temp. under specific heating conditions, then cooling the entire part of the crystal. CONSTITUTION:The ingot of the gallium arsenide single crystal is held for 2-20hr at 1,100-1,200 deg.C and is heated to the high temp., following which the entire part of the crystal is heat-treated. This heat treatment is executed by holding the single crystal for 2-20hr at 1,100-1,200 deg.C in a arsenic atmosphere in order to annihilate the defects which are formed during the growth of the ingot and are the cause for a dep energy level. Heating of the ingot to >=1,200 deg.C is undesirable as the ingot is heated nearly to the m.p. The deep energy level is generated again when the ingot heated to the high temp. is cooled. The entire part of the crystal is, therefore, heated uniformly and the rate of the cooling is preferably set at -20-200 deg.C/hr. The concn. of the defects which are the cause or the deep energy level is controlled by cooling the ingot at said cooling rate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23169487A JPS6473000A (en) | 1987-09-16 | 1987-09-16 | Heat treatment of gallium arsenide single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23169487A JPS6473000A (en) | 1987-09-16 | 1987-09-16 | Heat treatment of gallium arsenide single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473000A true JPS6473000A (en) | 1989-03-17 |
Family
ID=16927534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23169487A Pending JPS6473000A (en) | 1987-09-16 | 1987-09-16 | Heat treatment of gallium arsenide single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473000A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02293399A (en) * | 1989-05-08 | 1990-12-04 | Showa Denko Kk | Heat treatment of gaas ingot |
| WO2004001836A1 (en) * | 2002-06-24 | 2003-12-31 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| US8147991B2 (en) | 2002-06-24 | 2012-04-03 | Cree, Inc. | One hundred millimeter single crystal silicon carbide wafer |
-
1987
- 1987-09-16 JP JP23169487A patent/JPS6473000A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02293399A (en) * | 1989-05-08 | 1990-12-04 | Showa Denko Kk | Heat treatment of gaas ingot |
| WO2004001836A1 (en) * | 2002-06-24 | 2003-12-31 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| US6814801B2 (en) | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| JP2005531145A (en) * | 2002-06-24 | 2005-10-13 | クリー インコーポレイテッド | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| US8147991B2 (en) | 2002-06-24 | 2012-04-03 | Cree, Inc. | One hundred millimeter single crystal silicon carbide wafer |
| US9059118B2 (en) | 2002-06-24 | 2015-06-16 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| US9200381B2 (en) | 2002-06-24 | 2015-12-01 | Cree, Inc. | Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface |
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