JPS6472999A - Heat treatment of compound semiconductor single crystal - Google Patents
Heat treatment of compound semiconductor single crystalInfo
- Publication number
- JPS6472999A JPS6472999A JP23150587A JP23150587A JPS6472999A JP S6472999 A JPS6472999 A JP S6472999A JP 23150587 A JP23150587 A JP 23150587A JP 23150587 A JP23150587 A JP 23150587A JP S6472999 A JPS6472999 A JP S6472999A
- Authority
- JP
- Japan
- Prior art keywords
- temp
- single crystal
- semiconductor single
- crystal
- compd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To uniformize the electrical characteristics and optical characteristics of a compd. semiconductor single crystal by maintaining the compd. semiconductor single crystal at a specified temp. after growth and further lowering the temp. of the crystal at specific ratios. CONSTITUTION:The compd. semiconductor single crystal is maintained at the specified temp. in the temp. range of 700 deg.C-m.p. after growth and thereafter, the crystal temp. is lowered at 5-30 deg.C ratio perminute. The upper limit of the temp. falling rate is 30 deg.C/min according to this heat treatment method and, therefore, the cooling is executed more slowly than in the case of lowering the temp. at a ratio of several hundred degrees per minute and an increase in the dislocation density is suppressed. Since the lower limit of the temp. falling rate is 5 deg.C/min, just several hours are needed for the time after the start of the temp. falling before the end thereof. Good productivity is thus obtd. However, nearly 13-15hr are required to lower the crystal temp. down to room temp. and the productivity is lowered if the temp. falling rate is extremely lowered like to, for example, 1.3 deg.C/min. The temp. falling rate is thereupon, set at 5-30 deg.C in this method by taking the productivity into consideration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23150587A JPS6472999A (en) | 1987-09-14 | 1987-09-14 | Heat treatment of compound semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23150587A JPS6472999A (en) | 1987-09-14 | 1987-09-14 | Heat treatment of compound semiconductor single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6472999A true JPS6472999A (en) | 1989-03-17 |
Family
ID=16924545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23150587A Pending JPS6472999A (en) | 1987-09-14 | 1987-09-14 | Heat treatment of compound semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6472999A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01102932A (en) * | 1987-10-16 | 1989-04-20 | Showa Denko Kk | Manufacture of semi-insulating gaas substrate |
| JPH01257200A (en) * | 1988-04-08 | 1989-10-13 | Furukawa Electric Co Ltd:The | Production of substrate for gaas compound semiconductor |
| JP2006117464A (en) * | 2004-10-21 | 2006-05-11 | Sumitomo Electric Ind Ltd | THERMAL TREATMENT METHOD OF GaAs CRYSTAL, AND GaAs CRYSTAL SUBSTRATE |
| JP2009102280A (en) * | 2007-10-25 | 2009-05-14 | Key Tranding Co Ltd | Filling device and method for producing solid powdery cosmetic |
| JP2011219362A (en) * | 2011-07-25 | 2011-11-04 | Sumitomo Electric Ind Ltd | GaAs CRYSTAL SUBSTRATE |
| JP2014212326A (en) * | 2005-07-01 | 2014-11-13 | フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングＦｒｅｉｂｅｒｇｅｒ Ｃｏｍｐｏｕｎｄ Ｍａｔｅｒｉａｌｓ Ｇｍｂｈ | I annealing group iii-v semiconductor single crystal wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190300A (en) * | 1983-04-08 | 1984-10-29 | Hitachi Ltd | Method and apparatus for production of semiconductor |
| JPS62162700A (en) * | 1986-01-09 | 1987-07-18 | Furukawa Electric Co Ltd:The | Production of compound semiconductor ingot |
| JPS62216999A (en) * | 1986-03-14 | 1987-09-24 | Shin Etsu Handotai Co Ltd | Compound semiconductor single crystal and its production |
-
1987
- 1987-09-14 JP JP23150587A patent/JPS6472999A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190300A (en) * | 1983-04-08 | 1984-10-29 | Hitachi Ltd | Method and apparatus for production of semiconductor |
| JPS62162700A (en) * | 1986-01-09 | 1987-07-18 | Furukawa Electric Co Ltd:The | Production of compound semiconductor ingot |
| JPS62216999A (en) * | 1986-03-14 | 1987-09-24 | Shin Etsu Handotai Co Ltd | Compound semiconductor single crystal and its production |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01102932A (en) * | 1987-10-16 | 1989-04-20 | Showa Denko Kk | Manufacture of semi-insulating gaas substrate |
| JPH01257200A (en) * | 1988-04-08 | 1989-10-13 | Furukawa Electric Co Ltd:The | Production of substrate for gaas compound semiconductor |
| JP2006117464A (en) * | 2004-10-21 | 2006-05-11 | Sumitomo Electric Ind Ltd | THERMAL TREATMENT METHOD OF GaAs CRYSTAL, AND GaAs CRYSTAL SUBSTRATE |
| JP2014212326A (en) * | 2005-07-01 | 2014-11-13 | フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングＦｒｅｉｂｅｒｇｅｒ Ｃｏｍｐｏｕｎｄ Ｍａｔｅｒｉａｌｓ Ｇｍｂｈ | I annealing group iii-v semiconductor single crystal wafer |
| JP2009102280A (en) * | 2007-10-25 | 2009-05-14 | Key Tranding Co Ltd | Filling device and method for producing solid powdery cosmetic |
| JP2011219362A (en) * | 2011-07-25 | 2011-11-04 | Sumitomo Electric Ind Ltd | GaAs CRYSTAL SUBSTRATE |
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