JPS6468005A - Mosfet incorporating protection function - Google Patents

Mosfet incorporating protection function

Info

Publication number
JPS6468005A
JPS6468005A JP62224064A JP22406487A JPS6468005A JP S6468005 A JPS6468005 A JP S6468005A JP 62224064 A JP62224064 A JP 62224064A JP 22406487 A JP22406487 A JP 22406487A JP S6468005 A JPS6468005 A JP S6468005A
Authority
JP
Japan
Prior art keywords
mosfet
drain
source voltage
protection function
relations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62224064A
Other languages
Japanese (ja)
Other versions
JPH0795657B2 (en
Inventor
Tsutomu Matsushita
Yukitsugu Hirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP62224064A priority Critical patent/JPH0795657B2/en
Priority to US07/209,237 priority patent/US4893158A/en
Priority to DE3821065A priority patent/DE3821065C3/en
Publication of JPS6468005A publication Critical patent/JPS6468005A/en
Publication of JPH0795657B2 publication Critical patent/JPH0795657B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To reduce the cost by combining the drain current and the drain-source voltage to control turning-on/off of a main MOSFET. CONSTITUTION:The power consumption in the chip of a power MOSFET is detected by the combination between a drain-source voltage VDS and a drain current ID of the power MOSFET. When relations between the voltage VDS and the current ID satisfy condition ID>AXVDS+B, a gate-source voltage VGS is reduced to turn off a load driving MOSFET. A and B in this formula are a negative constant and a positive constant respectively, and they are so selected that a maximum value of VDSXID on the operation characteristic line, namely, -B<2>/4A and a maximum allowable loss PD of the load driving MOSFET satisfy relations PD>=-B<2>/4A. Thus, an MOSFET incorporating the overpower protection function of low cost is obtained.
JP62224064A 1987-06-22 1987-09-09 MOSFET with built-in protection function Expired - Fee Related JPH0795657B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62224064A JPH0795657B2 (en) 1987-09-09 1987-09-09 MOSFET with built-in protection function
US07/209,237 US4893158A (en) 1987-06-22 1988-06-20 MOSFET device
DE3821065A DE3821065C3 (en) 1987-06-22 1988-06-22 Integrated circuit with a power MOSFET and an overload protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62224064A JPH0795657B2 (en) 1987-09-09 1987-09-09 MOSFET with built-in protection function

Publications (2)

Publication Number Publication Date
JPS6468005A true JPS6468005A (en) 1989-03-14
JPH0795657B2 JPH0795657B2 (en) 1995-10-11

Family

ID=16808003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62224064A Expired - Fee Related JPH0795657B2 (en) 1987-06-22 1987-09-09 MOSFET with built-in protection function

Country Status (1)

Country Link
JP (1) JPH0795657B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02285679A (en) * 1989-04-26 1990-11-22 Nippondenso Co Ltd Semiconductor device for power use
DE4316275A1 (en) * 1992-05-15 1993-11-18 Nissan Motor MOS power switching circuit IC with short circuit protection - has current limiter between source of MOS power transistor and base of bipolar transistor
EP0602699A2 (en) * 1992-12-04 1994-06-22 Koninklijke Philips Electronics N.V. Current limited power semiconductor device
US5432471A (en) * 1992-09-04 1995-07-11 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
JP2005333636A (en) * 2004-05-17 2005-12-02 Samsung Electronics Co Ltd Method and device of switching amplifier for excessive current prevention
JP2007159946A (en) * 2005-12-16 2007-06-28 Pentax Corp Brush device for cleaning nozzle of endoscope
JP2008535255A (en) 2005-04-01 2008-08-28 レイセオン・カンパニー Integrated smart power switch
JP2009506696A (en) * 2005-08-30 2009-02-12 テールズ Apparatus and method for amplifying pulsed RF signals
JP2009514473A (en) * 2005-11-01 2009-04-02 ゼテックス・セミコンダクターズ・パブリック・リミテッド・カンパニー Monolithic LNA support IC
JP2009224667A (en) * 2008-03-18 2009-10-01 Fujitsu Telecom Networks Ltd Field effect transistor, semiconductor device, control circuit, control method therefor, and insulated gate bipolar transistor
JP2011228934A (en) * 2010-04-20 2011-11-10 Mitsubishi Electric Corp Power module
JP2019110521A (en) * 2017-12-15 2019-07-04 ローム株式会社 Switch device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61722A (en) * 1984-06-13 1986-01-06 Fuji Electric Co Ltd Measuring apparatus of supersonic wave propagation time
JPS6158045A (en) * 1984-08-29 1986-03-25 Hitachi Ltd Calculation processing system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61722A (en) * 1984-06-13 1986-01-06 Fuji Electric Co Ltd Measuring apparatus of supersonic wave propagation time
JPS6158045A (en) * 1984-08-29 1986-03-25 Hitachi Ltd Calculation processing system

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02285679A (en) * 1989-04-26 1990-11-22 Nippondenso Co Ltd Semiconductor device for power use
DE4316275A1 (en) * 1992-05-15 1993-11-18 Nissan Motor MOS power switching circuit IC with short circuit protection - has current limiter between source of MOS power transistor and base of bipolar transistor
US5432471A (en) * 1992-09-04 1995-07-11 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
EP0602699A2 (en) * 1992-12-04 1994-06-22 Koninklijke Philips Electronics N.V. Current limited power semiconductor device
JP2005333636A (en) * 2004-05-17 2005-12-02 Samsung Electronics Co Ltd Method and device of switching amplifier for excessive current prevention
JP2008535255A (en) 2005-04-01 2008-08-28 レイセオン・カンパニー Integrated smart power switch
JP2009506696A (en) * 2005-08-30 2009-02-12 テールズ Apparatus and method for amplifying pulsed RF signals
JP2009514473A (en) * 2005-11-01 2009-04-02 ゼテックス・セミコンダクターズ・パブリック・リミテッド・カンパニー Monolithic LNA support IC
JP2007159946A (en) * 2005-12-16 2007-06-28 Pentax Corp Brush device for cleaning nozzle of endoscope
JP2009224667A (en) * 2008-03-18 2009-10-01 Fujitsu Telecom Networks Ltd Field effect transistor, semiconductor device, control circuit, control method therefor, and insulated gate bipolar transistor
JP2011228934A (en) * 2010-04-20 2011-11-10 Mitsubishi Electric Corp Power module
JP2019110521A (en) * 2017-12-15 2019-07-04 ローム株式会社 Switch device

Also Published As

Publication number Publication date
JPH0795657B2 (en) 1995-10-11

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees