JPS6468005A - Mosfet incorporating protection function - Google Patents
Mosfet incorporating protection functionInfo
- Publication number
- JPS6468005A JPS6468005A JP62224064A JP22406487A JPS6468005A JP S6468005 A JPS6468005 A JP S6468005A JP 62224064 A JP62224064 A JP 62224064A JP 22406487 A JP22406487 A JP 22406487A JP S6468005 A JPS6468005 A JP S6468005A
- Authority
- JP
- Japan
- Prior art keywords
- mosfet
- drain
- source voltage
- protection function
- relations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Amplifiers (AREA)
- Bipolar Transistors (AREA)
- Protection Of Static Devices (AREA)
Abstract
PURPOSE:To reduce the cost by combining the drain current and the drain-source voltage to control turning-on/off of a main MOSFET. CONSTITUTION:The power consumption in the chip of a power MOSFET is detected by the combination between a drain-source voltage VDS and a drain current ID of the power MOSFET. When relations between the voltage VDS and the current ID satisfy condition ID>AXVDS+B, a gate-source voltage VGS is reduced to turn off a load driving MOSFET. A and B in this formula are a negative constant and a positive constant respectively, and they are so selected that a maximum value of VDSXID on the operation characteristic line, namely, -B<2>/4A and a maximum allowable loss PD of the load driving MOSFET satisfy relations PD>=-B<2>/4A. Thus, an MOSFET incorporating the overpower protection function of low cost is obtained.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62224064A JPH0795657B2 (en) | 1987-09-09 | 1987-09-09 | MOSFET with built-in protection function |
US07/209,237 US4893158A (en) | 1987-06-22 | 1988-06-20 | MOSFET device |
DE3821065A DE3821065C3 (en) | 1987-06-22 | 1988-06-22 | Integrated circuit with a power MOSFET and an overload protection circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62224064A JPH0795657B2 (en) | 1987-09-09 | 1987-09-09 | MOSFET with built-in protection function |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6468005A true JPS6468005A (en) | 1989-03-14 |
JPH0795657B2 JPH0795657B2 (en) | 1995-10-11 |
Family
ID=16808003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62224064A Expired - Fee Related JPH0795657B2 (en) | 1987-06-22 | 1987-09-09 | MOSFET with built-in protection function |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0795657B2 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02285679A (en) * | 1989-04-26 | 1990-11-22 | Nippondenso Co Ltd | Semiconductor device for power use |
DE4316275A1 (en) * | 1992-05-15 | 1993-11-18 | Nissan Motor | MOS power switching circuit IC with short circuit protection - has current limiter between source of MOS power transistor and base of bipolar transistor |
EP0602699A2 (en) * | 1992-12-04 | 1994-06-22 | Koninklijke Philips Electronics N.V. | Current limited power semiconductor device |
US5432471A (en) * | 1992-09-04 | 1995-07-11 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
JP2005333636A (en) * | 2004-05-17 | 2005-12-02 | Samsung Electronics Co Ltd | Method and device of switching amplifier for excessive current prevention |
JP2007159946A (en) * | 2005-12-16 | 2007-06-28 | Pentax Corp | Brush device for cleaning nozzle of endoscope |
JP2008535255A (en) | 2005-04-01 | 2008-08-28 | レイセオン・カンパニー | Integrated smart power switch |
JP2009506696A (en) * | 2005-08-30 | 2009-02-12 | テールズ | Apparatus and method for amplifying pulsed RF signals |
JP2009514473A (en) * | 2005-11-01 | 2009-04-02 | ゼテックス・セミコンダクターズ・パブリック・リミテッド・カンパニー | Monolithic LNA support IC |
JP2009224667A (en) * | 2008-03-18 | 2009-10-01 | Fujitsu Telecom Networks Ltd | Field effect transistor, semiconductor device, control circuit, control method therefor, and insulated gate bipolar transistor |
JP2011228934A (en) * | 2010-04-20 | 2011-11-10 | Mitsubishi Electric Corp | Power module |
JP2019110521A (en) * | 2017-12-15 | 2019-07-04 | ローム株式会社 | Switch device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61722A (en) * | 1984-06-13 | 1986-01-06 | Fuji Electric Co Ltd | Measuring apparatus of supersonic wave propagation time |
JPS6158045A (en) * | 1984-08-29 | 1986-03-25 | Hitachi Ltd | Calculation processing system |
-
1987
- 1987-09-09 JP JP62224064A patent/JPH0795657B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61722A (en) * | 1984-06-13 | 1986-01-06 | Fuji Electric Co Ltd | Measuring apparatus of supersonic wave propagation time |
JPS6158045A (en) * | 1984-08-29 | 1986-03-25 | Hitachi Ltd | Calculation processing system |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02285679A (en) * | 1989-04-26 | 1990-11-22 | Nippondenso Co Ltd | Semiconductor device for power use |
DE4316275A1 (en) * | 1992-05-15 | 1993-11-18 | Nissan Motor | MOS power switching circuit IC with short circuit protection - has current limiter between source of MOS power transistor and base of bipolar transistor |
US5432471A (en) * | 1992-09-04 | 1995-07-11 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
EP0602699A2 (en) * | 1992-12-04 | 1994-06-22 | Koninklijke Philips Electronics N.V. | Current limited power semiconductor device |
JP2005333636A (en) * | 2004-05-17 | 2005-12-02 | Samsung Electronics Co Ltd | Method and device of switching amplifier for excessive current prevention |
JP2008535255A (en) | 2005-04-01 | 2008-08-28 | レイセオン・カンパニー | Integrated smart power switch |
JP2009506696A (en) * | 2005-08-30 | 2009-02-12 | テールズ | Apparatus and method for amplifying pulsed RF signals |
JP2009514473A (en) * | 2005-11-01 | 2009-04-02 | ゼテックス・セミコンダクターズ・パブリック・リミテッド・カンパニー | Monolithic LNA support IC |
JP2007159946A (en) * | 2005-12-16 | 2007-06-28 | Pentax Corp | Brush device for cleaning nozzle of endoscope |
JP2009224667A (en) * | 2008-03-18 | 2009-10-01 | Fujitsu Telecom Networks Ltd | Field effect transistor, semiconductor device, control circuit, control method therefor, and insulated gate bipolar transistor |
JP2011228934A (en) * | 2010-04-20 | 2011-11-10 | Mitsubishi Electric Corp | Power module |
JP2019110521A (en) * | 2017-12-15 | 2019-07-04 | ローム株式会社 | Switch device |
Also Published As
Publication number | Publication date |
---|---|
JPH0795657B2 (en) | 1995-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |