JPS6464358A - Schottky-type diode - Google Patents
Schottky-type diodeInfo
- Publication number
- JPS6464358A JPS6464358A JP22022387A JP22022387A JPS6464358A JP S6464358 A JPS6464358 A JP S6464358A JP 22022387 A JP22022387 A JP 22022387A JP 22022387 A JP22022387 A JP 22022387A JP S6464358 A JPS6464358 A JP S6464358A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- photoresist
- schottky
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To reduce a leakage current in a reverse direction by a method wherein impurity concentration in an n-layer under a Schottky electrode is reduced sufficiently to reduce a capacitance value, and an impurity region whose concentration is close to that in an n<+> layer is formed between a high-concentration impurity region on the side of an ohmic electrode and the Schottky electrode so that its thickness can be thinner than that of the n<+> layer. CONSTITUTION:An SiO2 thin film 35 is formed on a GaAs semiinsulating substrate 5; a photoresist 31 is applied to it. A window is opened at the photoresist; ions are implanted; an n-layer 32 is formed. Then, an electrode metal tungsten silicide film to be used as a Schottky electrode 4 of a diode or as a gate of a transistor is applied; an electrode metal is processed. Then, this assembly is covered with an SiO2 film 36; an n' layer 2 is formed. In this case, the n' layer 2 is formed in a manner which is self-aligned with the electrode metal. Then, the photoresist 31 is removed; after that, this assembly is etched in such a way that the SiO2 film is left only at a side part of the Schottky electrode 4; a side wall 10 is formed; one part is covered with the photoresist 31; an n<+> layer 3 is formed. In addition, AuGe, Ni and Au are deposited on a part where the window has been opened. This assembly is heat-treated and alloyed; an ohmic electrode 6 is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22022387A JPS6464358A (en) | 1987-09-04 | 1987-09-04 | Schottky-type diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22022387A JPS6464358A (en) | 1987-09-04 | 1987-09-04 | Schottky-type diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6464358A true JPS6464358A (en) | 1989-03-10 |
Family
ID=16747809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22022387A Pending JPS6464358A (en) | 1987-09-04 | 1987-09-04 | Schottky-type diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6464358A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376812A (en) * | 1989-04-12 | 1994-12-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
-
1987
- 1987-09-04 JP JP22022387A patent/JPS6464358A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376812A (en) * | 1989-04-12 | 1994-12-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5153683A (en) | Field effect transistor | |
EP0100529A1 (en) | High speed field-effect transistor employing heterojunction | |
JPS57152166A (en) | Manufacture of schottky barrier gate field effect transistor | |
US5227644A (en) | Heterojunction field effect transistor with improve carrier density and mobility | |
US4866491A (en) | Heterojunction field effect transistor having gate threshold voltage capability | |
JPS6464358A (en) | Schottky-type diode | |
JPS5691477A (en) | Semiconductor | |
JPS57152168A (en) | Manufacture of schottky barrier gate field effect transistor | |
US5837570A (en) | Heterostructure semiconductor device and method of fabricating same | |
JP2645993B2 (en) | Field effect type semiconductor device and method of manufacturing the same | |
JPS57198661A (en) | Semiconductor device | |
JPH04199518A (en) | Field-effect transistor and manufacture thereof | |
JPS59222966A (en) | Semiconductor device | |
JPS5749229A (en) | Manufacture of gaas device | |
JPS6412580A (en) | Hetero-junction field-effect transistor | |
JPS6461067A (en) | Field-effect transistor and manufacture thereof | |
JPH098283A (en) | Semiconductor device | |
JPS57114284A (en) | Field effect transistor | |
JPS6433934A (en) | Semiconductor device | |
JPS63173375A (en) | Schottky junction type field-effect transistor | |
JPS6085567A (en) | Field-effect transistor | |
JPS5749239A (en) | Manufacture of gaas device | |
JPS57145377A (en) | Manufacture of schottky barrier type field effect transistor | |
JPS647571A (en) | Manufacture of semiconductor device | |
JPS6471175A (en) | Gallium arsenide (gaas) field effect transistor |