JPS6464264A - Semiconductor photo detector using circular electrode - Google Patents

Semiconductor photo detector using circular electrode

Info

Publication number
JPS6464264A
JPS6464264A JP62204577A JP20457787A JPS6464264A JP S6464264 A JPS6464264 A JP S6464264A JP 62204577 A JP62204577 A JP 62204577A JP 20457787 A JP20457787 A JP 20457787A JP S6464264 A JPS6464264 A JP S6464264A
Authority
JP
Japan
Prior art keywords
electrode
current
circumference
light
resistive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62204577A
Other languages
Japanese (ja)
Inventor
Kunio Asai
Naotake Kono
Saiko Kawagoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEKIYU SANGYO KATSUSEIKA CENTER
Tonen General Sekiyu KK
Japan Petroleum Energy Center JPEC
Original Assignee
SEKIYU SANGYO KATSUSEIKA CENTER
Petroleum Energy Center PEC
Toa Nenryo Kogyyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEKIYU SANGYO KATSUSEIKA CENTER, Petroleum Energy Center PEC, Toa Nenryo Kogyyo KK filed Critical SEKIYU SANGYO KATSUSEIKA CENTER
Priority to JP62204577A priority Critical patent/JPS6464264A/en
Publication of JPS6464264A publication Critical patent/JPS6464264A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To enable the measurement of light incidence position displacement and incident energy, with a simple structure, by arranging a circular electrode and a center electrode, on the periphery of a resistive layer and at a center, respectively, and leading out, from each electrode, a current of electric charge generated by incidence of light, which current flows through the resistive layer. CONSTITUTION:When light enters an Si layer 2 though a substrate 5 and a transparent electrode 4, electric charge generates in the layer, in response to the energy of incident light, and a current flows to each electrode through a resistive layer 1. In the case where a resistor R is not connected, and the current is lead out directly from a center electrode, the detected current from the center electrode becomes small, as a light incidence position goes toward the periphery, and on the contrary, the current increases in a circumference electrode. In the case where the center electrode is not formed, and the current is lead out only by the circumference electrode, the circumference current does not change regardless of the change of light incidence position. If a resistor R having almost equal resistance corresponding to the radius length of the resistive layer 2 of a detector is connect to the central electrode, and the detection is performed in this state, an electrically almost equivalent state to the case where the central electrode does not exist can be obtained. As a result, the circumference current can be made constant.
JP62204577A 1987-08-18 1987-08-18 Semiconductor photo detector using circular electrode Pending JPS6464264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62204577A JPS6464264A (en) 1987-08-18 1987-08-18 Semiconductor photo detector using circular electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62204577A JPS6464264A (en) 1987-08-18 1987-08-18 Semiconductor photo detector using circular electrode

Publications (1)

Publication Number Publication Date
JPS6464264A true JPS6464264A (en) 1989-03-10

Family

ID=16492772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62204577A Pending JPS6464264A (en) 1987-08-18 1987-08-18 Semiconductor photo detector using circular electrode

Country Status (1)

Country Link
JP (1) JPS6464264A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778182A (en) * 1980-10-31 1982-05-15 Kazuo Fushimi Semiconductor position detector
JPS5852514A (en) * 1981-08-11 1983-03-28 カ−ル・エリツク・モランデル Measuring device for distance between light source and surface of observation
JPS63153407A (en) * 1986-12-18 1988-06-25 Mitsutoyo Corp Semiconductor position detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778182A (en) * 1980-10-31 1982-05-15 Kazuo Fushimi Semiconductor position detector
JPS5852514A (en) * 1981-08-11 1983-03-28 カ−ル・エリツク・モランデル Measuring device for distance between light source and surface of observation
JPS63153407A (en) * 1986-12-18 1988-06-25 Mitsutoyo Corp Semiconductor position detector

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