JPS6461958A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6461958A
JPS6461958A JP62219827A JP21982787A JPS6461958A JP S6461958 A JPS6461958 A JP S6461958A JP 62219827 A JP62219827 A JP 62219827A JP 21982787 A JP21982787 A JP 21982787A JP S6461958 A JPS6461958 A JP S6461958A
Authority
JP
Japan
Prior art keywords
type
substrate
gaas layer
electrode
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219827A
Other languages
Japanese (ja)
Inventor
Kotaro Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62219827A priority Critical patent/JPS6461958A/en
Publication of JPS6461958A publication Critical patent/JPS6461958A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/10125—Reinforcing structures
    • H01L2224/10126—Bump collar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent any cracks from occurring upon welding of an interconnector to a bus electrode, by providing a bonding paste part electrically insulated, to which external wirings of surface electrodes are connected, on an Si substrate. CONSTITUTION:An n-type Si substrate 1 includes an n-type GaAs layer 2, a p-type GaAs layer 3, and an antireflection film 4 formed thereon, all those elements constituting a GaAs solar cell 51. The substrate 1 further includes a bus electrode (bonding pad part) 5b of a p-type electrode 5 provided thereon via an insulating layer 8. Connection between a grid electrode 5a disposed on the p-type GaAs layer 3 and the bus electrode 5b disposed on the n-type Si substrate 1 is assured by providing part of the grid electrode 5a on the n-type Si substrate 1. Thereupon, an insulating layer 8 electrically isolates the grid electrode 5a from an pn junction 7. Consequently no direct stress is applied on the p-type GaAs layer 3 upon welding of an interconnector 12, thereby preventing any crack from being produced in the p-type GaAs layer 3.
JP62219827A 1987-09-02 1987-09-02 Semiconductor device Pending JPS6461958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219827A JPS6461958A (en) 1987-09-02 1987-09-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219827A JPS6461958A (en) 1987-09-02 1987-09-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6461958A true JPS6461958A (en) 1989-03-08

Family

ID=16741664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219827A Pending JPS6461958A (en) 1987-09-02 1987-09-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6461958A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03250673A (en) * 1990-02-27 1991-11-08 Mitsubishi Electric Corp Compound semiconductor photoelectric conversion element on si substrate
JPH03283474A (en) * 1990-03-29 1991-12-13 Mitsubishi Electric Corp Compound semiconductor photoelectric conversion element of si substrate
US5145793A (en) * 1990-04-13 1992-09-08 Mitsubishi Denki Kabushiki Kaisha Manufacturing a gallium arsenide solar cell on a silicon substrate
US6882761B2 (en) 2001-01-22 2005-04-19 The Furukawa Electric Co., Ltd. Silicon platform for optical modules
US8728880B2 (en) 2010-12-17 2014-05-20 Samsung Electronics Co., Ltd. Graphene electronic device and method of fabricating the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS531484A (en) * 1976-06-28 1978-01-09 Seiko Epson Corp Solar cell for watches
JPS622268B2 (en) * 1976-02-13 1987-01-19 Staalkat Bv
JPS63156372A (en) * 1986-12-19 1988-06-29 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622268B2 (en) * 1976-02-13 1987-01-19 Staalkat Bv
JPS531484A (en) * 1976-06-28 1978-01-09 Seiko Epson Corp Solar cell for watches
JPS63156372A (en) * 1986-12-19 1988-06-29 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03250673A (en) * 1990-02-27 1991-11-08 Mitsubishi Electric Corp Compound semiconductor photoelectric conversion element on si substrate
JPH03283474A (en) * 1990-03-29 1991-12-13 Mitsubishi Electric Corp Compound semiconductor photoelectric conversion element of si substrate
US5145793A (en) * 1990-04-13 1992-09-08 Mitsubishi Denki Kabushiki Kaisha Manufacturing a gallium arsenide solar cell on a silicon substrate
US6882761B2 (en) 2001-01-22 2005-04-19 The Furukawa Electric Co., Ltd. Silicon platform for optical modules
US8728880B2 (en) 2010-12-17 2014-05-20 Samsung Electronics Co., Ltd. Graphene electronic device and method of fabricating the same
US9257528B2 (en) 2010-12-17 2016-02-09 Samsung Electronics Co., Ltd. Graphene electronic device and method of fabricating the same

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