JPS6461383A - Method for pulling up single crystal rod and apparatus therefor - Google Patents

Method for pulling up single crystal rod and apparatus therefor

Info

Publication number
JPS6461383A
JPS6461383A JP21848587A JP21848587A JPS6461383A JP S6461383 A JPS6461383 A JP S6461383A JP 21848587 A JP21848587 A JP 21848587A JP 21848587 A JP21848587 A JP 21848587A JP S6461383 A JPS6461383 A JP S6461383A
Authority
JP
Japan
Prior art keywords
single crystal
crystal rod
molten liquid
prescribed
parallel part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21848587A
Other languages
Japanese (ja)
Inventor
Yoshimasa Miyazaki
Seiji Shinoyama
Akihiko Shibuya
Shunta Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Siltronic Japan Corp
Original Assignee
Nippon Steel Corp
NSC Electron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp, NSC Electron Corp filed Critical Nippon Steel Corp
Priority to JP21848587A priority Critical patent/JPS6461383A/en
Publication of JPS6461383A publication Critical patent/JPS6461383A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a single crystal rod having excellent processability, by providing a specific guide board having a part parallel to the surface of molten liquid, placing the board between a crucible wall and a single crystal rod to be pulled up from the molten liquid and pulling up the single crystal rod under controlled flow rate of inert gas, length of the parallel part, etc., thereby excluding harmful components in high efficiency and controlling the oxygen concentration. CONSTITUTION:A single crystal rod 6 is pulled up via a seed crystal 5 from a molten liquid 4 heated and melted in a crucible 3 positioned in a chamber 1 with a heater 2. The above pulling up apparatus is provided with a guide board 10 having a slant face 10a gradually approaching toward the single crystal rod 6 and a parallel part 10b having a prescribed length (d) along the surface of the molten liquid 4. The board 10 is disposed in such a manner as to keep a prescribed gap (D) between the surface of the molten liquid 4 and the parallel part 10b. An inert gas 8 is introduced through an inlet port at a prescribed flow rate (F). The single crystal rod 6 is grown while controlling at least one of the factors selected from the flow rate F, the length (d) of the parallel part and the gap D at respective prescribed level to achieve the target oxygen concentration of the grown single crystal rod while thoroughly contacting the inert gas 8 with the surface of the molten liquid 4.
JP21848587A 1987-08-31 1987-08-31 Method for pulling up single crystal rod and apparatus therefor Pending JPS6461383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21848587A JPS6461383A (en) 1987-08-31 1987-08-31 Method for pulling up single crystal rod and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21848587A JPS6461383A (en) 1987-08-31 1987-08-31 Method for pulling up single crystal rod and apparatus therefor

Publications (1)

Publication Number Publication Date
JPS6461383A true JPS6461383A (en) 1989-03-08

Family

ID=16720663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21848587A Pending JPS6461383A (en) 1987-08-31 1987-08-31 Method for pulling up single crystal rod and apparatus therefor

Country Status (1)

Country Link
JP (1) JPS6461383A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6465086A (en) * 1987-09-05 1989-03-10 Shinetsu Handotai Kk Apparatus and process for producing single crystal rod
JPH01160891A (en) * 1987-12-16 1989-06-23 Mitsubishi Metal Corp Apparatus for pulling up single crystal
JPH01160893A (en) * 1987-12-16 1989-06-23 Mitsubishi Metal Corp Method for controlling oxygen concentration in silicon single crystal
JPH01160892A (en) * 1987-12-16 1989-06-23 Mitsubishi Metal Corp Method for controlling oxygen concentration in silicon single crystal
JPH03122089A (en) * 1989-10-05 1991-05-24 Shin Etsu Handotai Co Ltd Method for regulating oxygen concentration in si single crystal and apparatus therefor
JPH05279172A (en) * 1991-04-20 1993-10-26 Komatsu Denshi Kinzoku Kk Method and apparatus for growing crystal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740119A (en) * 1980-07-18 1982-03-05 Skf Kugellagerfabriken Gmbh Thin bearing bush made by pressdrawing
JPS62138384A (en) * 1985-12-11 1987-06-22 Shin Etsu Handotai Co Ltd Method and device for pulling single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740119A (en) * 1980-07-18 1982-03-05 Skf Kugellagerfabriken Gmbh Thin bearing bush made by pressdrawing
JPS62138384A (en) * 1985-12-11 1987-06-22 Shin Etsu Handotai Co Ltd Method and device for pulling single crystal

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6465086A (en) * 1987-09-05 1989-03-10 Shinetsu Handotai Kk Apparatus and process for producing single crystal rod
JPH01160891A (en) * 1987-12-16 1989-06-23 Mitsubishi Metal Corp Apparatus for pulling up single crystal
JPH01160893A (en) * 1987-12-16 1989-06-23 Mitsubishi Metal Corp Method for controlling oxygen concentration in silicon single crystal
JPH01160892A (en) * 1987-12-16 1989-06-23 Mitsubishi Metal Corp Method for controlling oxygen concentration in silicon single crystal
JPH03122089A (en) * 1989-10-05 1991-05-24 Shin Etsu Handotai Co Ltd Method for regulating oxygen concentration in si single crystal and apparatus therefor
JPH05279172A (en) * 1991-04-20 1993-10-26 Komatsu Denshi Kinzoku Kk Method and apparatus for growing crystal

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