JPS6457757A - Vertical insulated-gate field-effect transistor - Google Patents

Vertical insulated-gate field-effect transistor

Info

Publication number
JPS6457757A
JPS6457757A JP62216119A JP21611987A JPS6457757A JP S6457757 A JPS6457757 A JP S6457757A JP 62216119 A JP62216119 A JP 62216119A JP 21611987 A JP21611987 A JP 21611987A JP S6457757 A JPS6457757 A JP S6457757A
Authority
JP
Japan
Prior art keywords
layer
resistivity
type
pepi
dielectric strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62216119A
Other languages
Japanese (ja)
Inventor
Hiroshi Yanagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62216119A priority Critical patent/JPS6457757A/en
Publication of JPS6457757A publication Critical patent/JPS6457757A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To shorter reverse recovery time of a diode present between source and drain, by setting resistivity of an epitaxial layer to be M times (M>1) as large as resistivity determined by relation between resistivity and dielectric strength observed when extension of a depletion layer is ensured, and decreasing the thickness of the epitaxial layer corresponding thereto. CONSTITUTION:An N-type layer 2a is epitaxially grown on a highly doped N-type semiconductor substrate 1. A P-type diffused layer 3 is formed on a predetermined region on the layer 2a and, further, a highly doped N-type dif fused layer 4 is formed in a predetermined region on the layer 3. A gate elec trode G, a source electrode S and a drain electrode D are formed on predeter mined regions on the N-type expitaxial layer 2a, the P-type diffused layer 3 and the N-type diffused layer 4. Resistivity Pepi of the N-type epitaxial layer 2a is set to be twice (M=2) as large as resistivity Pepi determined by relation between dielectric strength and resistivity Pepi of the epitaxial layer as observed when extension of a depletion layer is ensured (preferably M>=1.5). In this man ner, a diode between the source and the drain is allowed to have shortened reverse recovery time without changing dielectric strength or ON resistance.
JP62216119A 1987-08-28 1987-08-28 Vertical insulated-gate field-effect transistor Pending JPS6457757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62216119A JPS6457757A (en) 1987-08-28 1987-08-28 Vertical insulated-gate field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62216119A JPS6457757A (en) 1987-08-28 1987-08-28 Vertical insulated-gate field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6457757A true JPS6457757A (en) 1989-03-06

Family

ID=16683546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62216119A Pending JPS6457757A (en) 1987-08-28 1987-08-28 Vertical insulated-gate field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6457757A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839065A (en) * 1981-08-12 1983-03-07 シ−メンス・アクチエンゲゼルシヤフト Power mos field effect transistor
JPS60177675A (en) * 1984-02-24 1985-09-11 Hitachi Ltd Insulated gate semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839065A (en) * 1981-08-12 1983-03-07 シ−メンス・アクチエンゲゼルシヤフト Power mos field effect transistor
JPS60177675A (en) * 1984-02-24 1985-09-11 Hitachi Ltd Insulated gate semiconductor device

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