JPS6457757A - Vertical insulated-gate field-effect transistor - Google Patents
Vertical insulated-gate field-effect transistorInfo
- Publication number
- JPS6457757A JPS6457757A JP62216119A JP21611987A JPS6457757A JP S6457757 A JPS6457757 A JP S6457757A JP 62216119 A JP62216119 A JP 62216119A JP 21611987 A JP21611987 A JP 21611987A JP S6457757 A JPS6457757 A JP S6457757A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistivity
- type
- pepi
- dielectric strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000011084 recovery Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To shorter reverse recovery time of a diode present between source and drain, by setting resistivity of an epitaxial layer to be M times (M>1) as large as resistivity determined by relation between resistivity and dielectric strength observed when extension of a depletion layer is ensured, and decreasing the thickness of the epitaxial layer corresponding thereto. CONSTITUTION:An N-type layer 2a is epitaxially grown on a highly doped N-type semiconductor substrate 1. A P-type diffused layer 3 is formed on a predetermined region on the layer 2a and, further, a highly doped N-type dif fused layer 4 is formed in a predetermined region on the layer 3. A gate elec trode G, a source electrode S and a drain electrode D are formed on predeter mined regions on the N-type expitaxial layer 2a, the P-type diffused layer 3 and the N-type diffused layer 4. Resistivity Pepi of the N-type epitaxial layer 2a is set to be twice (M=2) as large as resistivity Pepi determined by relation between dielectric strength and resistivity Pepi of the epitaxial layer as observed when extension of a depletion layer is ensured (preferably M>=1.5). In this man ner, a diode between the source and the drain is allowed to have shortened reverse recovery time without changing dielectric strength or ON resistance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62216119A JPS6457757A (en) | 1987-08-28 | 1987-08-28 | Vertical insulated-gate field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62216119A JPS6457757A (en) | 1987-08-28 | 1987-08-28 | Vertical insulated-gate field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6457757A true JPS6457757A (en) | 1989-03-06 |
Family
ID=16683546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62216119A Pending JPS6457757A (en) | 1987-08-28 | 1987-08-28 | Vertical insulated-gate field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6457757A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5839065A (en) * | 1981-08-12 | 1983-03-07 | シ−メンス・アクチエンゲゼルシヤフト | Power mos field effect transistor |
JPS60177675A (en) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | Insulated gate semiconductor device |
-
1987
- 1987-08-28 JP JP62216119A patent/JPS6457757A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5839065A (en) * | 1981-08-12 | 1983-03-07 | シ−メンス・アクチエンゲゼルシヤフト | Power mos field effect transistor |
JPS60177675A (en) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | Insulated gate semiconductor device |
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