JPS6455871A - Manufacture of self-alignment type gate electrode - Google Patents
Manufacture of self-alignment type gate electrodeInfo
- Publication number
- JPS6455871A JPS6455871A JP21261587A JP21261587A JPS6455871A JP S6455871 A JPS6455871 A JP S6455871A JP 21261587 A JP21261587 A JP 21261587A JP 21261587 A JP21261587 A JP 21261587A JP S6455871 A JPS6455871 A JP S6455871A
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- etching
- thereafter
- insulating film
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To keep gate leaking current and gate capacitance low, by implanting ions with a resist pattern as a mask, forming a high concentration impurity region, side-etching the resist pattern so as to form a narrow part, and thereafter depositing an insulating film on a semiconductor substrate by a low temperature depositing method. CONSTITUTION:A resist pattern 34 is used as a mask, and Si<+> ions are implanted into a semiconductor substrate 30. An n<+> GaAs region, i. e., a high impurity region 36, is formed on both sides of the resist pattern 34 in a self- aligning mode. Thereafter, the resist pattern 34 undergoes side etching by O2 RIE etching or O2 plasma etching. Thus a narrowed resist pattern 34A is formed. An insulating layer 38 is further deposited at low temperature on the substrate 30 including the resist pattern 34A. For example, ECR-CVD is used, and an Si3N4 film is formed. The resist pattern 34A is lifted off, and the insulating film on the resist pattern 34A is removed. An opening 40 is provided in the insulating film 38. Thereafter, the substrate is annealed in an AsH3 atmosphere, and Cr is evaporated. The evaporated Cr film is etched, and a gate electrode 42 made of Cr is formed in the opening 40.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21261587A JPS6455871A (en) | 1987-08-26 | 1987-08-26 | Manufacture of self-alignment type gate electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21261587A JPS6455871A (en) | 1987-08-26 | 1987-08-26 | Manufacture of self-alignment type gate electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6455871A true JPS6455871A (en) | 1989-03-02 |
Family
ID=16625613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21261587A Pending JPS6455871A (en) | 1987-08-26 | 1987-08-26 | Manufacture of self-alignment type gate electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6455871A (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57133636A (en) * | 1981-02-13 | 1982-08-18 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma at low temperature |
JPS5933837A (en) * | 1982-08-19 | 1984-02-23 | Nippon Telegr & Teleph Corp <Ntt> | Formation of insulating film onto surface of semiconductor device |
JPS59229876A (en) * | 1983-06-13 | 1984-12-24 | Toshiba Corp | Manufacture of schottky gate type field effect transistor |
JPS6190471A (en) * | 1984-10-11 | 1986-05-08 | Nec Corp | Manufacture of semiconductor device |
JPS61176162A (en) * | 1985-01-31 | 1986-08-07 | Fujitsu Ltd | Field-effect semiconductor device and manufacture thereof |
JPS6284566A (en) * | 1985-10-08 | 1987-04-18 | Sharp Corp | Field-effect transistor and manufacture thereof |
-
1987
- 1987-08-26 JP JP21261587A patent/JPS6455871A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57133636A (en) * | 1981-02-13 | 1982-08-18 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma at low temperature |
JPS5933837A (en) * | 1982-08-19 | 1984-02-23 | Nippon Telegr & Teleph Corp <Ntt> | Formation of insulating film onto surface of semiconductor device |
JPS59229876A (en) * | 1983-06-13 | 1984-12-24 | Toshiba Corp | Manufacture of schottky gate type field effect transistor |
JPS6190471A (en) * | 1984-10-11 | 1986-05-08 | Nec Corp | Manufacture of semiconductor device |
JPS61176162A (en) * | 1985-01-31 | 1986-08-07 | Fujitsu Ltd | Field-effect semiconductor device and manufacture thereof |
JPS6284566A (en) * | 1985-10-08 | 1987-04-18 | Sharp Corp | Field-effect transistor and manufacture thereof |
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