JPS6455856A - Memory cell - Google Patents

Memory cell

Info

Publication number
JPS6455856A
JPS6455856A JP62211462A JP21146287A JPS6455856A JP S6455856 A JPS6455856 A JP S6455856A JP 62211462 A JP62211462 A JP 62211462A JP 21146287 A JP21146287 A JP 21146287A JP S6455856 A JPS6455856 A JP S6455856A
Authority
JP
Japan
Prior art keywords
groove
memory cell
photoresist
capacitor
capacitor electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62211462A
Other languages
Japanese (ja)
Inventor
Takayoshi Higuchi
Satoru Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62211462A priority Critical patent/JPS6455856A/en
Publication of JPS6455856A publication Critical patent/JPS6455856A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To miniaturize a memory cell by not forming a capacitor electrode layer at least on a part of a rim section of a groove. CONSTITUTION:After peeling a resist film, a capacitor oxide film 111 is formed in an element area including a groove 107 formed by thermal oxidation. A photoresist 115 should be made to remain on a predetermined part including the area on the groove 107 by patterning after sequentially stacking a polycrystal silicon and a photoresist over the entire surface including the groove 107. Then, a capacitor electrode 113 is formed by means of isotropic etching, using the photoresist 115 as a mask. At this point, the polycrystal silicon in the vicinity of the rim part 107a of the groove is also removed. According to the constitution, which implements a structure where neither capacitor oxide film 111 nor capacitor electrode 113 are formed on the rim part 107a of the groove, the gate electrode 117 can be formed close to the groove 107, whereby the miniaturization of the memory cell can be achieved.
JP62211462A 1987-08-27 1987-08-27 Memory cell Pending JPS6455856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62211462A JPS6455856A (en) 1987-08-27 1987-08-27 Memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62211462A JPS6455856A (en) 1987-08-27 1987-08-27 Memory cell

Publications (1)

Publication Number Publication Date
JPS6455856A true JPS6455856A (en) 1989-03-02

Family

ID=16606340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62211462A Pending JPS6455856A (en) 1987-08-27 1987-08-27 Memory cell

Country Status (1)

Country Link
JP (1) JPS6455856A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0410288A2 (en) * 1989-07-25 1991-01-30 Texas Instruments Incorporated Dynamic random access memory cells and methods for fabrication

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152056A (en) * 1984-01-20 1985-08-10 Hitachi Ltd Semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152056A (en) * 1984-01-20 1985-08-10 Hitachi Ltd Semiconductor memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0410288A2 (en) * 1989-07-25 1991-01-30 Texas Instruments Incorporated Dynamic random access memory cells and methods for fabrication
EP0701285A2 (en) * 1989-07-25 1996-03-13 Texas Instruments Incorporated Semiconductor memory device

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