JPS6454755A - Memory - Google Patents
MemoryInfo
- Publication number
- JPS6454755A JPS6454755A JP62211574A JP21157487A JPS6454755A JP S6454755 A JPS6454755 A JP S6454755A JP 62211574 A JP62211574 A JP 62211574A JP 21157487 A JP21157487 A JP 21157487A JP S6454755 A JPS6454755 A JP S6454755A
- Authority
- JP
- Japan
- Prior art keywords
- capacity
- electrode
- layers
- conductive layer
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To reduce the area of a cell by forming the lower electrode of the capacity of adjacent memories having a switching transistor and a laminated capacity of a first conductive layer and the other electrode of a second conductive layer, and disposing the first conductive layer adjacently thereto. CONSTITUTION:The lower electrode of a laminated capacity is formed of a polysilicon layer 3 connected to the source 11a of a FET in a memory cell 1, and of another polysilicon layer 4 connected to that in a memory cell 2, and the layers 3, 4 are alternately employed in a perpendicular direction to this paper. They are isolated in the cells by a connecting hole 14 to a bit line 15, and its interval R is small like on an isolating layer 12 in other boundary. Accordingly, they can be easily integrated. The ends of the layers 3, 4 cover the sidewalls of a gate electrode 16 to widen its area. An interlayer insulating film 18 is formed on each lower electrode, a common capacity upper electrode 19 is superposed, and a bit line 15 is disposed through an interlayer insulating film 20. According to this configuration, the pattern of the layers 3, 4 is reduced like a size R1, and can be extended to the vicinity of the boundary of the cells, thereby increasing its lower area to increase its capacity. Accordingly, even if a memory size is reduced, the characteric of the cell can be secured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62211574A JPS6454755A (en) | 1987-08-26 | 1987-08-26 | Memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62211574A JPS6454755A (en) | 1987-08-26 | 1987-08-26 | Memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6454755A true JPS6454755A (en) | 1989-03-02 |
Family
ID=16608025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62211574A Pending JPS6454755A (en) | 1987-08-26 | 1987-08-26 | Memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6454755A (en) |
-
1987
- 1987-08-26 JP JP62211574A patent/JPS6454755A/en active Pending
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