JPS6454754A - Output driving circuit - Google Patents

Output driving circuit

Info

Publication number
JPS6454754A
JPS6454754A JP62211905A JP21190587A JPS6454754A JP S6454754 A JPS6454754 A JP S6454754A JP 62211905 A JP62211905 A JP 62211905A JP 21190587 A JP21190587 A JP 21190587A JP S6454754 A JPS6454754 A JP S6454754A
Authority
JP
Japan
Prior art keywords
terminal
potential
turned
electrode
vdd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62211905A
Other languages
Japanese (ja)
Inventor
Masami Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62211905A priority Critical patent/JPS6454754A/en
Publication of JPS6454754A publication Critical patent/JPS6454754A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an output driving circuit which suppresses a transient current and has a less noise by connecting the drain electrode of an N-type IGFET to the positive electrode of a power source and the drain electrode of a P-type IGFET to the negative electrode, and connecting its source electrode to its gate electrode. CONSTITUTION:When +VDD is applied to a terminal 13, a NMOSFET 11 is turned ON, a PMOSFET 12 is turned OFF, and a terminal 14 becomes a high potential. When the threshold value of a FET11 is VTN, the terminal 14 does not become (VDD - VTN) or more. When -VSS (0 potential) is applied to the terminal 13, the FET 11 is turned OFF, the FET 12 is turned ON, and the terminal 14 becomes a low potential. If the threshold value of the FET is VTP, when the terminal 14 arrives at the VTP, it does not drop from it or less. Thus, since the potential of the terminal 14 does not fluctuate to (power source +VDD--VSS), an overshoot, an undershoot is not generated, and a noise in case of varying its output potential is reduced.
JP62211905A 1987-08-26 1987-08-26 Output driving circuit Pending JPS6454754A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62211905A JPS6454754A (en) 1987-08-26 1987-08-26 Output driving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62211905A JPS6454754A (en) 1987-08-26 1987-08-26 Output driving circuit

Publications (1)

Publication Number Publication Date
JPS6454754A true JPS6454754A (en) 1989-03-02

Family

ID=16613592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62211905A Pending JPS6454754A (en) 1987-08-26 1987-08-26 Output driving circuit

Country Status (1)

Country Link
JP (1) JPS6454754A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373208A (en) * 1992-07-29 1994-12-13 Kabushiki Kaisha Sankyo Seiko Seisakusho DC motor with anti-vibration brush mounts
US5528096A (en) * 1992-10-29 1996-06-18 Kabushiki Kaisha Sankyo Seiki Seisakusho Small brush-use DC motor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373208A (en) * 1992-07-29 1994-12-13 Kabushiki Kaisha Sankyo Seiko Seisakusho DC motor with anti-vibration brush mounts
US5528096A (en) * 1992-10-29 1996-06-18 Kabushiki Kaisha Sankyo Seiki Seisakusho Small brush-use DC motor

Similar Documents

Publication Publication Date Title
ATE160063T1 (en) CIRCUIT ARRANGEMENT FOR CONTROLLING A MOS POWER TRANSISTOR
JPS6471217A (en) Output buffer circuit
KR850006277A (en) How to increase input buffer and threshold voltage
KR960039569A (en) Booster circuit
US4129792A (en) Driver buffer circuit using delay inverters
JPS6454754A (en) Output driving circuit
TW367411B (en) Signal generator
KR890012445A (en) Push-pull output circuit
EP0206084A2 (en) CMOS power-on detection circuit
JPS5723123A (en) Semiconductor device having volatile memory
US6566938B2 (en) System for a constant current source
JPS5776916A (en) Output circuit
JPS5717031A (en) Power supply circuit
JPS6416118A (en) Gate driving circuit
JPS5880928A (en) Automatic generating circuit for reset trigger in supplying power
JPS57101406A (en) Mos analog signal amplifying circuit
JPS5793573A (en) Mis semiconductor device
JPH0529360A (en) Boosting device
JPS5478069A (en) Dual complementary mos transistor circuit
JPS5723318A (en) Comparator using programable unijunction transistor
JPS6434016A (en) Output driver circuit
JPS6465924A (en) Semiconductor integrated circuit
JPS5679522A (en) Cmos schmitt trigger circuit
JPS5624966A (en) Integrated circuit
JPS6454816A (en) Cmos inverter circuit