JPS6454329U - - Google Patents
Info
- Publication number
- JPS6454329U JPS6454329U JP14962187U JP14962187U JPS6454329U JP S6454329 U JPS6454329 U JP S6454329U JP 14962187 U JP14962187 U JP 14962187U JP 14962187 U JP14962187 U JP 14962187U JP S6454329 U JPS6454329 U JP S6454329U
- Authority
- JP
- Japan
- Prior art keywords
- gas
- region
- compound semiconductor
- film forming
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案化合物半導体用成膜装置の概略
図、第２図は本考案に係るガス噴出板の斜視図、
第３図は従来の化合物半導体用成膜装置の概略図
である。
１，７……反応室、２……有機金属ガス導入管
、３……ハイドライドガス導入管、４……サセプ
タ、５……成膜用基板、８……ガス導入室、９…
…気相成長室、１０……ガス噴出板。
FIG. 1 is a schematic diagram of the compound semiconductor film forming apparatus of the present invention, and FIG. 2 is a perspective view of the gas ejection plate according to the present invention.
FIG. 3 is a schematic diagram of a conventional film forming apparatus for compound semiconductors. DESCRIPTION OF SYMBOLS 1, 7... Reaction chamber, 2... Organometallic gas introduction tube, 3... Hydride gas introduction tube, 4... Susceptor, 5... Substrate for film formation, 8... Gas introduction chamber, 9...
...Vapor phase growth chamber, 10...Gas ejection plate.
Claims (1)
合物半導体生成用ガスを反応室内部に導入し、該
ガスを分解して化合物半導体を気相成長させる化
合物半導体用成膜装置において、前記反応室が前
記ガス導入用の第１の領域と気相成長用の第２の
領域とから成り、第１の領域と第２の領域の境に
複数のガス通過孔を形成したことを特徴とする化
合物半導体用成膜装置。 A compound semiconductor film forming apparatus for introducing a compound semiconductor producing gas consisting of at least a first gas and a second gas into a reaction chamber and decomposing the gas to grow a compound semiconductor in a vapor phase, wherein the reaction chamber is A compound semiconductor comprising a first region for gas introduction and a second region for vapor phase growth, and a plurality of gas passage holes are formed at the boundary between the first region and the second region. Film forming equipment for use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14962187U JPS6454329U (en) | 1987-09-30 | 1987-09-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14962187U JPS6454329U (en) | 1987-09-30 | 1987-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6454329U true JPS6454329U (en) | 1989-04-04 |
Family
ID=31422017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14962187U Pending JPS6454329U (en) | 1987-09-30 | 1987-09-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6454329U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7632093B2 (en) | 2004-09-06 | 2009-12-15 | Samsung Electronics Co., Ltd. | Pyrolysis furnace having gas flowing path controller |
-
1987
- 1987-09-30 JP JP14962187U patent/JPS6454329U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7632093B2 (en) | 2004-09-06 | 2009-12-15 | Samsung Electronics Co., Ltd. | Pyrolysis furnace having gas flowing path controller |
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