JPS645366B2 - - Google Patents
Info
- Publication number
- JPS645366B2 JPS645366B2 JP15139380A JP15139380A JPS645366B2 JP S645366 B2 JPS645366 B2 JP S645366B2 JP 15139380 A JP15139380 A JP 15139380A JP 15139380 A JP15139380 A JP 15139380A JP S645366 B2 JPS645366 B2 JP S645366B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic layer
- magnetic
- layer
- gap
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004804 winding Methods 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000007736 thin film deposition technique Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/312—Details for reducing flux leakage between the electrical coil layers and the magnetic cores or poles or between the magnetic cores or poles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】
本発明は薄膜磁気ヘツドおよびその製造方法に
係り、さらに詳しくは供給される電流の磁気変換
効率を改善した薄膜磁気ヘツドおよびその製造方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film magnetic head and a method of manufacturing the same, and more particularly to a thin film magnetic head with improved magnetic conversion efficiency of supplied current and a method of manufacturing the same.
薄膜磁気ヘツドは従来型の磁気ヘツドに比較し
て超小型化することができ、周波数特性が優れて
いるため、記録密度の増大に対処できる磁気ヘツ
ドとして大きな期待がもたれている。この薄膜磁
気ヘツドは優れた利点があるが書き込み電流が大
きいことおよび再生出力が少ないと言う点で改良
の余地があり、努力がつづけられている。その成
果の１つが巻線部分を多数巻きにすることであ
る。この多数巻き構造の例を第１図〜第４図に示
す。 Thin-film magnetic heads can be made much smaller than conventional magnetic heads and have excellent frequency characteristics, so they have great expectations as magnetic heads that can cope with increases in recording density. Although this thin film magnetic head has excellent advantages, there is room for improvement in that the write current is large and the reproduction output is low, and efforts are being made to improve it. One of the results is that the winding section can be made into multiple turns. Examples of this multi-turn structure are shown in FIGS. 1 to 4.
第１図および第２図に示す例はスパイラル構造
の例を示し、図において符号１は基板で、この基
板１上に磁性材２と、スパイラル状に形成された
巻線３が薄膜堆積法の技術などを利用して、被着
されている。これらの部分の整形はエツチング法
などによつて行われる。さらに詳細に述べれば、
第２図に示すように磁性材２は下部磁性層２ａと
上部磁性層２ｂとから成り、下部磁性層２ａ上に
絶縁層４を介して巻線３が形成され、さらに、そ
の上側に絶縁層５を介して上部磁性層２ｂが形成
され、その上に保護板６が重ねられる。 The example shown in FIGS. 1 and 2 shows an example of a spiral structure, in which reference numeral 1 is a substrate, on which a magnetic material 2 and a spiral winding 3 are deposited using a thin film deposition method. It is attached using technology. Shaping of these parts is performed by an etching method or the like. In more detail,
As shown in FIG. 2, the magnetic material 2 consists of a lower magnetic layer 2a and an upper magnetic layer 2b, and a winding 3 is formed on the lower magnetic layer 2a with an insulating layer 4 interposed therebetween. An upper magnetic layer 2b is formed through the upper magnetic layer 5, and a protective plate 6 is placed on top of the upper magnetic layer 2b.
このようなスパイラル構造を有する巻線を備え
た薄膜磁気ヘツドは構造が簡単である為、製造工
程が少なくて済むという利点があるが、下部磁性
層２ａと上部磁性層２ｂとの間の端部が巻線３の
間で狭くなつたり広くなつたりする為、磁気回路
的に漏洩が生じやすくなり、ギヤツプ部分への磁
気変換効率が悪くなる。この為、絶縁層５を厚く
するなどの種々の改良案が考えられているが、工
程が複雑になるわりには磁気変換効率に対して充
分な効果がない。 A thin film magnetic head equipped with a winding having such a spiral structure has the advantage of requiring fewer manufacturing steps because it has a simple structure. Since the width becomes narrower or wider between the windings 3, leakage tends to occur in the magnetic circuit, and the efficiency of magnetic conversion to the gap portion deteriorates. For this reason, various improvement plans have been considered, such as increasing the thickness of the insulating layer 5, but these do not have sufficient effects on the magnetic conversion efficiency, although they complicate the process.
第３図及び第４図に示す例は積層構造の例で、
両図中第１図及び第２図と同一部分または相当す
る部分には同一符号を付してある。この例にあつ
ては巻線３はほぼＵ字状に形成されるとともに、
下層のものほど幅広で、上層のものほど幅狭に形
成され、それぞれの間には、絶縁層５ａが介装さ
れており、各巻線の端部間は導線３ａによつて接
続されている。 The example shown in FIGS. 3 and 4 is an example of a laminated structure,
In both figures, the same or corresponding parts as in FIGS. 1 and 2 are designated by the same reference numerals. In this example, the winding 3 is formed approximately in a U-shape, and
The lower layer is wider, and the upper layer is narrower. An insulating layer 5a is interposed between each winding, and the ends of each winding are connected by a conductive wire 3a.
このような積層構造の巻線３を有する薄膜磁気
ヘツドでは、積層された巻線間に大きな段差がで
き、上部磁性層２ｂや絶縁層５ａを薄膜堆積法で
形成する場合、均一な膜を形成することが難しく
なり、いわゆるステツプカバレツジが問題とな
る。すなわち巻線３の段差部において上部磁性層
２ｂや絶縁層が平坦な部分と比較して薄くなつた
り、切れたりする為に磁気回路的に段差部の磁性
層の薄くなつた所の磁束密度が増大して最初に飽
和してしまいヘツドのギヤツプ部分は未飽和の状
態となり、結果的には磁気変換効率が悪くなつて
しまう。 In a thin film magnetic head having such a laminated winding 3, there are large steps between the laminated windings, and when the upper magnetic layer 2b and insulating layer 5a are formed by a thin film deposition method, it is difficult to form a uniform film. Therefore, so-called step coverage becomes a problem. In other words, at the stepped portion of the winding 3, the upper magnetic layer 2b and the insulating layer become thinner or cut compared to the flat portion, so the magnetic flux density at the stepped portion becomes thinner in terms of the magnetic circuit. The magnetic flux increases and becomes saturated first, leaving the gap portion of the head in an unsaturated state, resulting in poor magnetic conversion efficiency.
本発明は以上のような従来の欠点を解消する為
になされたもので、磁気変換効率を大幅に向上さ
せることができるように構成した薄膜磁気ヘツド
及びその製造方法を提供することを目的としてい
る。 The present invention was made in order to eliminate the above-mentioned conventional drawbacks, and an object of the present invention is to provide a thin-film magnetic head configured to significantly improve magnetic conversion efficiency and a method for manufacturing the same. .
本発明においては上記の目的を達成するために
薄膜磁気ヘツドを保護板側構成体と基板側構成体
とに分け、基板側構成体に第１磁性層、絶縁層、
巻線層、フロントギヤツプ部第２磁性層及びバツ
クギヤツプ部第２磁性層を配し、保護板側構成体
に磁気記録媒体摺動面側に凸部が設けられた保護
板及び該凸部よりバツクギヤツプ側に配され前記
フロントギヤツプ部第２磁性層と前記バツクギヤ
ツプ部第２磁性層とを磁気的に接続するための保
護板側第２磁性層とを配し、両者を接合して一体
化させる構成を採用した。 In order to achieve the above object, the present invention divides a thin film magnetic head into a protection plate side structure and a substrate side structure, and the substrate side structure includes a first magnetic layer, an insulating layer,
A protective plate having a winding layer, a second magnetic layer in a front gap portion, and a second magnetic layer in a back gap portion, and a convex portion on the sliding surface side of the magnetic recording medium on the protective plate side structure, and a side closer to the back gap from the convex portion. A second magnetic layer on the protection plate side is disposed on the front gap portion and the second magnetic layer on the back gap portion is arranged to magnetically connect the second magnetic layer on the front gap portion and the second magnetic layer on the back gap portion, and a configuration is adopted in which the two are bonded and integrated. did.
以下、図面に示す実施例に基いて、本発明の詳
細を説明する。 Hereinafter, the present invention will be explained in detail based on embodiments shown in the drawings.
第５図及び第６図は基板側の構造を説明するも
ので、図において符号１０で示すものはシリコン
などからなる基板で、この基板１０上には磁性材
をスパツタリングなどの薄膜堆積法により被着さ
せ、エツチングにより整形し、下部磁性層１１を
形成する。この下部磁性層１１の上面には絶縁層
及びギヤツプを形成する為に、SiO2などの絶縁
材からなる絶縁層１２を同じくスパツタリングし
て形成し、エツチング処理して整形する。この絶
縁層１２の上にAlなどの導電材を蒸着し、エツ
チングを行つてスパイラル状の巻線１３を形成す
る。そしてさらにこれら巻線１３を被つて絶縁層
及びギヤツプ部となる絶縁層１４をSiO2などを
スパツタリングとエツチングにより形成する。 5 and 6 illustrate the structure on the substrate side. In the figures, the reference numeral 10 is a substrate made of silicon or the like, and a magnetic material is coated on this substrate 10 by a thin film deposition method such as sputtering. The lower magnetic layer 11 is formed by depositing and shaping by etching. In order to form an insulating layer and a gap on the upper surface of this lower magnetic layer 11, an insulating layer 12 made of an insulating material such as SiO 2 is similarly formed by sputtering and shaped by etching. A conductive material such as Al is deposited on this insulating layer 12 and etched to form a spiral winding 13. Further, an insulating layer 14 covering these windings 13 and serving as an insulating layer and a gap portion is formed by sputtering and etching with SiO 2 or the like.
SiO2からなる絶縁層１２，１４はギヤツプ幅
として利用する為に、両者を合わせた厚みがギヤ
ツプ幅になるように成膜を行うことが必要であ
る。 Since the insulating layers 12 and 14 made of SiO 2 are used as the gap width, it is necessary to form them so that the combined thickness of the two becomes the gap width.
次に、絶縁層１４の両端部にフロントギヤツプ
部上部磁性層（フロントギヤツプ部第２磁性層）
１５とバツクギヤツプ部上部磁性層（バツクギヤ
ツプ部第２磁性層）１６を形成する。ギヤツプ部
の形成は薄膜堆積技術及びエツチング技術を利用
している為、極めて高精度に形成することができ
る。 Next, a front gap upper magnetic layer (front gap second magnetic layer) is attached to both ends of the insulating layer 14.
15 and a backgap portion upper magnetic layer (backgap portion second magnetic layer) 16 are formed. Since the gap portion is formed using thin film deposition technology and etching technology, it can be formed with extremely high precision.
このようにして、まず、基板側の部分を形成し
ておく。 In this way, first, the substrate side portion is formed.
ところで保護板側は第７図〜第１０図に示すよ
うにして形成される。 By the way, the protection plate side is formed as shown in FIGS. 7 to 10.
まず、第７図に示すようにガラスなどからなる
保護板１７上でギヤツプ先端部の５割〜８割に相
当する部分にM0層１８を蒸着し、エツチングを
行つてM0層１８の下に凸部１９を形成する。こ
の凸部１９の高さは第６図に示すギヤツプ先端部
の磁性層１５の膜厚とほぼ同一にする。 First, as shown in FIG. 7, the M 0 layer 18 is deposited on a portion corresponding to 50% to 80% of the tip of the gap on a protective plate 17 made of glass or the like, and etched to form a layer below the M 0 layer 18. A convex portion 19 is formed on. The height of the convex portion 19 is made approximately the same as the thickness of the magnetic layer 15 at the tip of the gap shown in FIG.
次にM0層１８を残したままでギヤツプ先端部
分及びバツクギヤツプ部分に相当する部分にフオ
トレジスト２０を塗布する。 Next, a photoresist 20 is applied to the gap tip portion and the back gap portion while leaving the M 0 layer 18 intact.
次に第８図に示すようにフオトレジスト２０で
覆われていない部分をエツチングして保護板１７
に凹部１７ａを形成する。この凹部１７ａの深さ
は巻線１３、絶縁層１２，１４の合計の厚さより
大であることが好ましく、その1.5〜５倍程度が
好ましい。また、凹部１７ａの側壁は傾斜を持た
せた方が良く、好ましくは45〜80度程度になるよ
うに調整する。 Next, as shown in FIG.
A recess 17a is formed in the recess 17a. The depth of the recess 17a is preferably greater than the total thickness of the winding 13 and the insulating layers 12 and 14, and preferably about 1.5 to 5 times the total thickness. Further, it is preferable that the side wall of the recess 17a has an inclination, preferably adjusted to an angle of about 45 to 80 degrees.
次に第９図に示すようにフオトレジスト２０を
除去し、M0層１８を残したままで保護板１７の
全面にわたつて上部磁性層（保護板側第２磁性
層）２１を薄膜堆積法によつて形成する。しかる
後、第１０図に示すようにM0層１８を除いてM0
層１８の上部の磁性層２１をリフトオフ法で取り
除く。そしてバツクギヤツプ部分に相当する部分
に第６図に示した磁性層１５と１６の段差にほぼ
等しい厚さで磁性層２２をマスキングにより形成
する。 Next, as shown in FIG. 9, the photoresist 20 is removed, and the upper magnetic layer (second magnetic layer on the protective plate side) 21 is deposited over the entire surface of the protective plate 17 using a thin film deposition method while leaving the M 0 layer 18. Twist and form. After that, as shown in FIG. 10, the M 0 layer 18 is removed and the M 0
The magnetic layer 21 on top of the layer 18 is removed by a lift-off method. Then, a magnetic layer 22 is formed by masking in a portion corresponding to the backgap portion with a thickness approximately equal to the step difference between the magnetic layers 15 and 16 shown in FIG.
このようにして保護板１７側の各部を形成した
後第１１図に示すように基板１０側と保護板１７
側とを接着剤を介して接着させ一体化させる。こ
の時保護板１７側の凹部１７ａが形成する空間２
３は接着剤で満たされても空間のままでも良い。
このようにして一体化させた後、第１１図にＤ―
Ｄ線で示す部分を研削して磁気テープ摺動面を形
成し薄膜磁気ヘツドを完成する。 After forming each part on the protection plate 17 side in this way, as shown in FIG.
The sides are bonded together using an adhesive. At this time, the space 2 formed by the recess 17a on the protection plate 17 side
3 may be filled with adhesive or left as an empty space.
After integrating in this way, D-
The portion indicated by line D is ground to form a magnetic tape sliding surface, and a thin film magnetic head is completed.
このようにして得た薄膜磁気ヘツドは薄膜堆積
技術を利用して形成される為、高精度に作成で
き、磁気回路的にも上部磁性体と下部磁性体との
間の距離を充分にとることができ、磁気の漏洩は
少なく電流の磁気変換効率は極めて高くなる。ま
た、第１１図からも明らかなように、上部磁性層
２１がギヤツプ部の上部磁性層１５と接触してい
る部分がギヤツプ先端より奥にひつこんでいるた
め磁気記録媒体の摺動面にでるギヤツプは一つで
あり磁気変換効率を高めることができる。 The thin film magnetic head obtained in this way is formed using thin film deposition technology, so it can be manufactured with high precision, and it is also possible to maintain a sufficient distance between the upper magnetic body and the lower magnetic body in terms of the magnetic circuit. This results in less magnetic leakage and extremely high current-to-magnetic conversion efficiency. Furthermore, as is clear from FIG. 11, the portion of the upper magnetic layer 21 in contact with the upper magnetic layer 15 at the gap portion is recessed deeper than the tip of the gap, so that it is exposed to the sliding surface of the magnetic recording medium. There is only one gap, and the magnetic conversion efficiency can be increased.
尚、上記の実施例はスパイラル構造のものとし
て例示したが、積層構造の薄膜磁気ヘツドに対し
てもまつたく同様に適応することができる。又、
スパイラルと積層型との混合型のものにも適用で
き、基板材料としてはガラスの他にシリコン、ア
ルミナ等が使用でき、絶縁層としてはSiO2の他
にアルミナ、マグネシア、スピネル等が使用でき
巻線の材料としてはAlの他にAu、Cu等も充分に
使用できる。 Although the above embodiment has been illustrated as having a spiral structure, it is equally applicable to a thin film magnetic head having a laminated structure. or,
It can also be applied to a mixed type of spiral and laminated type, and the substrate material can be silicon, alumina, etc. in addition to glass, and the insulating layer can be made of alumina, magnesia, spinel, etc. in addition to SiO2 . In addition to Al, Au, Cu, etc. can also be used as wire materials.
以上の説明から明らかなように、本発明の薄膜
磁気ヘツドによれば基板側構成体と保護板側構成
体とを別々に構成し、両者を接合する構成となつ
ているため第１磁性層と第２磁性層との間隔を十
分に取ることができるため、これらの間の磁気の
漏洩が少なく、かつ保護板側第２磁性層が磁気記
録媒体摺動面に露出しないため、該摺動面に出る
ギヤツプは１つとなり、これらによつて磁気変換
効率を大幅に高めることができる。 As is clear from the above description, according to the thin-film magnetic head of the present invention, the substrate-side structure and the protection plate-side structure are configured separately, and the two are bonded together. Since there is a sufficient distance between the second magnetic layer and the second magnetic layer, there is little magnetic leakage between them, and the second magnetic layer on the protective plate side is not exposed to the sliding surface of the magnetic recording medium, so the sliding surface There is only one gap that appears, and the magnetic conversion efficiency can be greatly increased.
第１図は従来のスパイラル構造の巻線を有する
薄膜磁気ヘツドの平面図、第２図は、第１図のＡ
―Ａ線一部拡大断面図、第３図は従来の積層型巻
線を有する薄膜磁気ヘツドの平面図、第４図は第
３図のＢ―Ｂ線一部拡大断面図、第５図以下は本
発明の一実施例を説明するもので、第５図は基板
の平面図、第６図は第５図のＣ―Ｃ線一部拡大断
面図、第７図〜第１０図は保護板側の製造工程を
説明する一部拡大断面図、第１１図は基板側と保
護板側とを一体化させた状態の一部拡大断面図で
ある。
１０…基板、１１…第１磁性層、１２，１４…
絶縁層、１３…巻線、１５，１６…フロントギヤ
ツプ部第２磁性層、バツクギヤツプ部第２磁性
層、１７…保護板、１８…M0層、２０…フオト
レジスト、２１，２２…保護板側第２磁性層。
FIG. 1 is a plan view of a thin film magnetic head having a conventional spiral structure winding, and FIG. 2 is an A of FIG.
- Partially enlarged sectional view taken along line A, Figure 3 is a plan view of a conventional thin film magnetic head with laminated windings, Figure 4 is a partially enlarged sectional view taken along line B--B in Figure 3, and Figures 5 et seq. 5 is a plan view of a substrate, FIG. 6 is a partially enlarged cross-sectional view taken along line CC in FIG. 5, and FIGS. 7 to 10 are views showing a protection plate. FIG. 11 is a partially enlarged sectional view illustrating the manufacturing process of the side, and FIG. 11 is a partially enlarged sectional view showing the substrate side and the protection plate side integrated. DESCRIPTION OF SYMBOLS 10... Substrate, 11... First magnetic layer, 12, 14...
Insulating layer, 13...Winding, 15, 16...Front gap section second magnetic layer, back gap section second magnetic layer, 17...Protection plate, 18... M0 layer, 20...Photoresist, 21, 22...Protection plate side second magnetic layer. 2 magnetic layers.
Claims (1)
ツプ部第２磁性層及びバツクギヤツプ部第２磁性
層を含む基板側構成体と、磁気記録媒体摺動面側
に凸部が設けられた保護板及び該凸部よりバツク
ギヤツプ側に配され前記フロントギヤツプ部第２
磁性層と前記バツクギヤツプ部第２磁性層とを磁
気的に接続するための保護板側第２磁性層を含む
保護板側構成体とを一体化してなる薄膜磁気ヘツ
ド。 ２ 基板上に第１磁性層を形成する工程と、この
第１磁性層上に巻線層を形成する工程と、この巻
線層上に絶縁層を形成する工程と、この絶縁層の
フロントギヤツプ側端部にフロントギヤツプ部第
２磁性層を形成する工程と、バツクギヤツプ側端
部にバツクギヤツプ部第２磁性層を形成して基板
側構成体を得る工程と、保護板のフロントギヤツ
プ側に凸部を形成する工程と、該凸部よりバツク
ギヤツプ側に保護板側第２磁性層を形成して保護
板側構成体を得る工程と、該保護板側第２磁性層
によつて前記フロントギヤツプ部第２磁性層と前
記バツクギヤツプ部第２磁性層とが磁気的に接続
されるよう前記保護板側構成体と基板側構成体と
を接合する工程とを含むことを特徴とする薄膜磁
気ヘツドの製造方法。[Scope of Claims] 1. A substrate side structure including a first magnetic layer, an insulating layer, a winding layer, a front gap second magnetic layer, and a back gap second magnetic layer, and a convex portion on the sliding surface side of the magnetic recording medium. a protective plate provided with a protective plate arranged on the back gap side of the convex portion and
A thin film magnetic head formed by integrating a magnetic layer and a protective plate-side structure including a protective plate-side second magnetic layer for magnetically connecting the backgap portion second magnetic layer. 2. A step of forming a first magnetic layer on a substrate, a step of forming a winding layer on this first magnetic layer, a step of forming an insulating layer on this winding layer, and a step of forming a front gap side of this insulating layer. A step of forming a second magnetic layer of the front gap portion on the end portion, a step of forming a second magnetic layer of the back gap portion on the end portion of the back gap side to obtain a substrate side structure, and forming a convex portion on the front gap side of the protection plate. a step of forming a second magnetic layer on the back gap side of the convex portion to obtain a second magnetic layer on the front gap portion; A method for manufacturing a thin film magnetic head, comprising the step of joining the protective plate-side structure and the substrate-side structure so that the backgap portion second magnetic layer is magnetically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15139380A JPS5778613A (en) | 1980-10-30 | 1980-10-30 | Thin film magnetic head and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15139380A JPS5778613A (en) | 1980-10-30 | 1980-10-30 | Thin film magnetic head and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5778613A JPS5778613A (en) | 1982-05-17 |
| JPS645366B2 true JPS645366B2 (en) | 1989-01-30 |
Family
ID=15517596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15139380A Granted JPS5778613A (en) | 1980-10-30 | 1980-10-30 | Thin film magnetic head and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5778613A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0359965A (en) * | 1989-07-28 | 1991-03-14 | Nippon Telegr & Teleph Corp <Ntt> | Sheet type secondary battery, charger and charging device for the battery |
| JPH0367472A (en) * | 1989-08-04 | 1991-03-22 | Nippon Telegr & Teleph Corp <Ntt> | Thin type secondary battery charger |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212616A (en) * | 1982-06-03 | 1983-12-10 | Sanyo Electric Co Ltd | Magnetic head |
| US4755898A (en) * | 1983-06-13 | 1988-07-05 | Matsushita Electric Industrial Co., Ltd. | Amorphous magnetic head |
| JPS6010409A (en) * | 1983-06-29 | 1985-01-19 | Fujitsu Ltd | Production of thin film magnetic head |
| JPH0760490B2 (en) * | 1983-08-29 | 1995-06-28 | ソニー株式会社 | Method for manufacturing multi-element thin film magnetic head |
| JPS60119614A (en) * | 1983-11-30 | 1985-06-27 | Nec Kansai Ltd | Manufacture of thin film magnetic head |
| DE3420746A1 (en) * | 1984-06-04 | 1985-12-05 | Siemens AG, 1000 Berlin und 8000 München | MAGNETIC HEAD CONSTRUCTED IN LAYERS FOR A RECORDING MEDIUM TO BE MAGNETIZED |
| JPS61117715A (en) * | 1984-11-13 | 1986-06-05 | Nec Corp | Thin film magnetic head |
| JPS61284814A (en) * | 1985-06-11 | 1986-12-15 | Canon Inc | Thin film magnetic head |
| US6337783B1 (en) | 1998-08-12 | 2002-01-08 | International Business Machines Corporation | Write head with multi-stitched second pole piece |
| US7199972B2 (en) | 2001-08-31 | 2007-04-03 | Hitachi Global Storage Technologies Netherlands, B.V. | Narrow write head pole tip fabricated by sidewall processing |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5184618A (en) * | 1975-01-22 | 1976-07-24 | Nippon Electric Co | JIKI HETSUDO |
-
1980
- 1980-10-30 JP JP15139380A patent/JPS5778613A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0359965A (en) * | 1989-07-28 | 1991-03-14 | Nippon Telegr & Teleph Corp <Ntt> | Sheet type secondary battery, charger and charging device for the battery |
| JPH0367472A (en) * | 1989-08-04 | 1991-03-22 | Nippon Telegr & Teleph Corp <Ntt> | Thin type secondary battery charger |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5778613A (en) | 1982-05-17 |
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