JPS6450567A - Thin film transistor and manufacture thereof - Google Patents

Thin film transistor and manufacture thereof

Info

Publication number
JPS6450567A
JPS6450567A JP62208719A JP20871987A JPS6450567A JP S6450567 A JPS6450567 A JP S6450567A JP 62208719 A JP62208719 A JP 62208719A JP 20871987 A JP20871987 A JP 20871987A JP S6450567 A JPS6450567 A JP S6450567A
Authority
JP
Japan
Prior art keywords
source
amorphous silicon
ohmic contact
film
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62208719A
Other languages
Japanese (ja)
Other versions
JPH0611060B2 (en
Inventor
Fujio Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62208719A priority Critical patent/JPH0611060B2/en
Publication of JPS6450567A publication Critical patent/JPS6450567A/en
Publication of JPH0611060B2 publication Critical patent/JPH0611060B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To obtain the title thin film transistor having small parasitic resistance on its source and drain region and also having no lowering of yield of production generating in a lift-off process by a method wherein the ohmic contact layer located under a source and drain electrode is composed of the laminated film of an N<+>-type amorphous silicon film, on which N-type impurities are doped when it is grown, and a metal silicide. CONSTITUTION:A gate electrode 2, a gate insulating film 3 covering the gate electrode 2, an amorphous silicon film 4, a source and drain electrode 11 formed on both sides of the gate electrode 2, and an ohmic contact layer, which is formed under the source and drain electrode 11 for the purpose of having ohmic contact between the amorphous silicon film 4 and the source and drain electrode 11, are provided on a transparent insulative substrate 1. In such an amorphous silicon thin film transistor above-mentioned, said ohmic contact layer is composed of the laminated film consisting of an N+ type amorphous silicon layer 5, on which N-type impurities are doped when it was grown, and a metal silicide 7 formed on the film 5, and said ohmic contact layer is formed only on the source and drain region without overlapping on the gate electrode 2.
JP62208719A 1987-08-21 1987-08-21 Method of manufacturing thin film transistor Expired - Lifetime JPH0611060B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62208719A JPH0611060B2 (en) 1987-08-21 1987-08-21 Method of manufacturing thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208719A JPH0611060B2 (en) 1987-08-21 1987-08-21 Method of manufacturing thin film transistor

Publications (2)

Publication Number Publication Date
JPS6450567A true JPS6450567A (en) 1989-02-27
JPH0611060B2 JPH0611060B2 (en) 1994-02-09

Family

ID=16560949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62208719A Expired - Lifetime JPH0611060B2 (en) 1987-08-21 1987-08-21 Method of manufacturing thin film transistor

Country Status (1)

Country Link
JP (1) JPH0611060B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202572A (en) * 1988-09-21 1993-04-13 Fuji Xerox Co., Ltd. Thin film transistor
US5757028A (en) * 1994-08-23 1998-05-26 Casio Computer Co., Ltd. Thin film transistor with reduced leakage current
EP0851502A2 (en) * 1996-12-24 1998-07-01 Canon Kabushiki Kaisha Thin film semiconductor apparatus and production method thereof
KR19990088504A (en) * 1998-05-26 1999-12-27 모리시타 요이찌 Thin film transistor and manufacturing method thereof
KR100690001B1 (en) * 2000-02-21 2007-03-08 엘지.필립스 엘시디 주식회사 Liquid Crystal Display Device And Method for Fabricating the same
JP2010016126A (en) * 2008-07-02 2010-01-21 Fujifilm Corp Thin film field effect transistor, fabrication process therefor, and display device using the same
CN101794713A (en) * 2010-03-18 2010-08-04 友达光电股份有限公司 Thin film transistor and manufacturing method thereof
US8232147B2 (en) 2010-03-03 2012-07-31 Au Optronics Corporation Fabricating method of a thin film transistor having a dielectric layer for inhibiting leakage current

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168278A (en) * 1982-03-30 1983-10-04 Toshiba Corp Manufacture of thin film transistor
JPS6045066A (en) * 1983-08-22 1985-03-11 Fujitsu Ltd Manufacture of thin film transistor
JPS62172761A (en) * 1986-01-24 1987-07-29 Alps Electric Co Ltd Amorphous silicon thin film transistor and manufacture thereof
JPS62259471A (en) * 1986-05-02 1987-11-11 Fuji Xerox Co Ltd Manufacture of thin film transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168278A (en) * 1982-03-30 1983-10-04 Toshiba Corp Manufacture of thin film transistor
JPS6045066A (en) * 1983-08-22 1985-03-11 Fujitsu Ltd Manufacture of thin film transistor
JPS62172761A (en) * 1986-01-24 1987-07-29 Alps Electric Co Ltd Amorphous silicon thin film transistor and manufacture thereof
JPS62259471A (en) * 1986-05-02 1987-11-11 Fuji Xerox Co Ltd Manufacture of thin film transistor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202572A (en) * 1988-09-21 1993-04-13 Fuji Xerox Co., Ltd. Thin film transistor
US5757028A (en) * 1994-08-23 1998-05-26 Casio Computer Co., Ltd. Thin film transistor with reduced leakage current
EP0851502A2 (en) * 1996-12-24 1998-07-01 Canon Kabushiki Kaisha Thin film semiconductor apparatus and production method thereof
EP0851502A3 (en) * 1996-12-24 1999-06-02 Canon Kabushiki Kaisha Thin film semiconductor apparatus and production method thereof
KR19990088504A (en) * 1998-05-26 1999-12-27 모리시타 요이찌 Thin film transistor and manufacturing method thereof
KR100690001B1 (en) * 2000-02-21 2007-03-08 엘지.필립스 엘시디 주식회사 Liquid Crystal Display Device And Method for Fabricating the same
JP2010016126A (en) * 2008-07-02 2010-01-21 Fujifilm Corp Thin film field effect transistor, fabrication process therefor, and display device using the same
US8232147B2 (en) 2010-03-03 2012-07-31 Au Optronics Corporation Fabricating method of a thin film transistor having a dielectric layer for inhibiting leakage current
CN101794713A (en) * 2010-03-18 2010-08-04 友达光电股份有限公司 Thin film transistor and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0611060B2 (en) 1994-02-09

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