JPS6450468A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6450468A JPS6450468A JP20680387A JP20680387A JPS6450468A JP S6450468 A JPS6450468 A JP S6450468A JP 20680387 A JP20680387 A JP 20680387A JP 20680387 A JP20680387 A JP 20680387A JP S6450468 A JPS6450468 A JP S6450468A
- Authority
- JP
- Japan
- Prior art keywords
- flattened
- polycrystalline semiconductor
- employed
- insulating film
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 230000005669 field effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Recrystallisation Techniques (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To improve the performance of a semiconductor device, by flattening an uneven part generated when crystalline semiconductor layers are formed on a substrate, providing a gate insulating film and a gate electrode on the surface, and employing the vicinity of the flattened surface as a channel. CONSTITUTION:The uneven part of a polycrystalline semiconductor layer formed when a polycrystalline semiconductor layer having 0.5mum of more of crystalline grain size is formed on a substrate is flattened to 100Angstrom or less, a gate insulating film and a gate electrode are formed on the flattened surface, and the flattened surface is employed as the channel of a field-effect transistor. Thus, the polycrystalline semiconductor which is regarded as being inferior in performance is employed to easily obtain inexpensively a field-effect transistor having excellent characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20680387A JPS6450468A (en) | 1987-08-20 | 1987-08-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20680387A JPS6450468A (en) | 1987-08-20 | 1987-08-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6450468A true JPS6450468A (en) | 1989-02-27 |
Family
ID=16529352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20680387A Pending JPS6450468A (en) | 1987-08-20 | 1987-08-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6450468A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5061655A (en) * | 1990-02-16 | 1991-10-29 | Mitsubishi Denki Kabushiki Kaisha | Method of producing SOI structures |
-
1987
- 1987-08-20 JP JP20680387A patent/JPS6450468A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5061655A (en) * | 1990-02-16 | 1991-10-29 | Mitsubishi Denki Kabushiki Kaisha | Method of producing SOI structures |
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