JPS6448411A - Forming method of polysilicon layer - Google Patents
Forming method of polysilicon layerInfo
- Publication number
- JPS6448411A JPS6448411A JP20579887A JP20579887A JPS6448411A JP S6448411 A JPS6448411 A JP S6448411A JP 20579887 A JP20579887 A JP 20579887A JP 20579887 A JP20579887 A JP 20579887A JP S6448411 A JPS6448411 A JP S6448411A
- Authority
- JP
- Japan
- Prior art keywords
- thin
- onto
- silicon layer
- polysilicon layer
- film silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To form a polysilicon layer having a flat surface by shaping an amorphous flat thin-film silicon layer onto an silicon oxide film formed onto the surface of a semiconductor wafer at a low temperature, crystallizing the thin- film silicon layer through annealing treatment and shaping the polysilicon layer onto the surface of the crystallized thin-film silicon layer at a high temperature. CONSTITUTION:A noncrystalline thin-film silicon layer 3 is formed onto the surface of an silicon oxide film 2 on a semiconductor wafer 1 by using a decompression CVD device in which the inside of a core tube 5 is decompressed, semiconductor wafers 1 loaded onto a wafer basket 6 are arranged to a section heated by a heater 7 in the core tube 5 and a reaction gas is introduced from a gas introducing port 8. The amorphous thin-film silicon layer 3 is annealed and crystallized through heating in a nitrogen gas atmosphere, and a polysilicon layer 4 is shaped onto the crystallized thin-film silicon layer 3. Accordingly, the surface of the polysilicon layer can be formed flatly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20579887A JPS6448411A (en) | 1987-08-18 | 1987-08-18 | Forming method of polysilicon layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20579887A JPS6448411A (en) | 1987-08-18 | 1987-08-18 | Forming method of polysilicon layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6448411A true JPS6448411A (en) | 1989-02-22 |
Family
ID=16512861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20579887A Pending JPS6448411A (en) | 1987-08-18 | 1987-08-18 | Forming method of polysilicon layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6448411A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05129203A (en) * | 1991-11-07 | 1993-05-25 | Japan Steel Works Ltd:The | Formation of epitaxial thin film |
| US5385863A (en) * | 1991-06-21 | 1995-01-31 | Nec Corporation | Method of manufacturing polysilicon film including recrystallization of an amorphous film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5796518A (en) * | 1980-11-03 | 1982-06-15 | Ibm | Method of forming polycrystalline silicon layer |
-
1987
- 1987-08-18 JP JP20579887A patent/JPS6448411A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5796518A (en) * | 1980-11-03 | 1982-06-15 | Ibm | Method of forming polycrystalline silicon layer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5385863A (en) * | 1991-06-21 | 1995-01-31 | Nec Corporation | Method of manufacturing polysilicon film including recrystallization of an amorphous film |
| JPH05129203A (en) * | 1991-11-07 | 1993-05-25 | Japan Steel Works Ltd:The | Formation of epitaxial thin film |
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