JPS6447885A - Dry etching equipment - Google Patents

Dry etching equipment

Info

Publication number
JPS6447885A
JPS6447885A JP20452687A JP20452687A JPS6447885A JP S6447885 A JPS6447885 A JP S6447885A JP 20452687 A JP20452687 A JP 20452687A JP 20452687 A JP20452687 A JP 20452687A JP S6447885 A JPS6447885 A JP S6447885A
Authority
JP
Japan
Prior art keywords
wafer
load lock
dry etching
equipment
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20452687A
Other languages
Japanese (ja)
Inventor
Jun Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20452687A priority Critical patent/JPS6447885A/en
Publication of JPS6447885A publication Critical patent/JPS6447885A/en
Pending legal-status Critical Current

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  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To carry out the curing of resist by means of ultraviolet-ray irradiation in a load lock and to simplify dry etching equipment as a whole, by providing an ultraviolet lamp to the inside of a load lock in front of an etching chamber in dry etching equipment. CONSTITUTION:A wafer 2a is fed from a carrier 6a into a load lock 1a on the former-stage side, and the surface of the wafer 2a is irradiated with an ultraviolet lamp 14 in the vacuum load lock 1a, by which the resist on the surface of the wafer 2a is cured. Successively, the wafer 2a is transferred into an etching chamber 7, where a high-frequency voltage is impressed from a high-frequency electric power source 3 on internal electrodes 5a, 5b to carry out electric discharge so as to subject the wafer 2a surface to etching treatment. Subsequently, the wafer 2a is transferred into a load lock 1b on the latter-stage side and supplied with N2 gas until atmospheric pressure is reached, and then, the wafer 2a is held into a carrier 6b. In this way, by unifying the etching chamber 7 and the ultraviolet lamp into one equipment, dry etching can be performed by simple equipment.
JP20452687A 1987-08-18 1987-08-18 Dry etching equipment Pending JPS6447885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20452687A JPS6447885A (en) 1987-08-18 1987-08-18 Dry etching equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20452687A JPS6447885A (en) 1987-08-18 1987-08-18 Dry etching equipment

Publications (1)

Publication Number Publication Date
JPS6447885A true JPS6447885A (en) 1989-02-22

Family

ID=16491995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20452687A Pending JPS6447885A (en) 1987-08-18 1987-08-18 Dry etching equipment

Country Status (1)

Country Link
JP (1) JPS6447885A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149733A (en) * 1981-03-11 1982-09-16 Hitachi Ltd Dry etching method
JPS59207628A (en) * 1983-05-11 1984-11-24 Hitachi Ltd Dry-etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149733A (en) * 1981-03-11 1982-09-16 Hitachi Ltd Dry etching method
JPS59207628A (en) * 1983-05-11 1984-11-24 Hitachi Ltd Dry-etching method

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