JPS6447067A - Semiconductor storage device and manufacture thereof - Google Patents

Semiconductor storage device and manufacture thereof

Info

Publication number
JPS6447067A
JPS6447067A JP62204816A JP20481687A JPS6447067A JP S6447067 A JPS6447067 A JP S6447067A JP 62204816 A JP62204816 A JP 62204816A JP 20481687 A JP20481687 A JP 20481687A JP S6447067 A JPS6447067 A JP S6447067A
Authority
JP
Japan
Prior art keywords
electrode
film
electrode film
transfer gate
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62204816A
Other languages
Japanese (ja)
Inventor
Akira Uchiyama
Yutaka Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP62204816A priority Critical patent/JPS6447067A/en
Publication of JPS6447067A publication Critical patent/JPS6447067A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make a signal storing capacitor large in capacitance by a method wherein a laminated capacitor section where a first electrode film and a second electrode film are alternately arranged is provided onto a substrate with a transfer gate formed on it, the first electrode film is connected with a bit wire through the intermediary of the transfer gate, and a power voltage is impressed on the second electrode film. CONSTITUTION:A laminated capacitor section is provided in such a manner that first electrode films 304 and second electrode films 306 are alternately arranged interposing dielectric layers 308 between them on a substrate with a transfer gate formed on it. Next, a second electrode film 306a to be a plate electrode layer made of a high melting metal or the like is formed on a capacitor insulating film 308a. A capacitor insulating film 306b is successively laminated on the plate electrode layer 306a. Insulating sections 318a and 318b and 320a-320c are formed on depletion regions 312a-312c and 314a and 314b which are deposited on one end of each first electrode film 304 and the other end 12 of each second electrode film 306 on the former end through a selective etching. A charge storing layer connecting conductive film 324 and a plate electrode connecting conductive film 322 are formed on the exposed part of the other end of the first electrode films 304a-304c and the exposed part of one end of the second electrode films 306a and 306b respectively.
JP62204816A 1987-08-18 1987-08-18 Semiconductor storage device and manufacture thereof Pending JPS6447067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62204816A JPS6447067A (en) 1987-08-18 1987-08-18 Semiconductor storage device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62204816A JPS6447067A (en) 1987-08-18 1987-08-18 Semiconductor storage device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6447067A true JPS6447067A (en) 1989-02-21

Family

ID=16496854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62204816A Pending JPS6447067A (en) 1987-08-18 1987-08-18 Semiconductor storage device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6447067A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188663A (en) * 1989-10-26 1991-08-16 Internatl Business Mach Corp <Ibm> Semiconductor device and manufacture thereof
JPH03218663A (en) * 1989-11-01 1991-09-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US5077225A (en) * 1991-04-30 1991-12-31 Micron Technology, Inc. Process for fabricating a stacked capacitor within a monolithic integrated circuit using oxygen implantation
JPH0442963A (en) * 1990-06-09 1992-02-13 Samsung Electron Co Ltd Method of manufacturing multilayer stack capacitor and multilayer stack capacitor manufactured by said method
JPH07245381A (en) * 1990-02-23 1995-09-19 Goldstar Electron Co Ltd Manufacture of capacitor and its structure
JP2013231627A (en) * 2012-04-27 2013-11-14 Nippon Soken Inc Particle matter detection element, manufacturing method thereof, and particle matter detection sensor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188663A (en) * 1989-10-26 1991-08-16 Internatl Business Mach Corp <Ibm> Semiconductor device and manufacture thereof
JPH03218663A (en) * 1989-11-01 1991-09-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH07245381A (en) * 1990-02-23 1995-09-19 Goldstar Electron Co Ltd Manufacture of capacitor and its structure
JPH0442963A (en) * 1990-06-09 1992-02-13 Samsung Electron Co Ltd Method of manufacturing multilayer stack capacitor and multilayer stack capacitor manufactured by said method
US5077225A (en) * 1991-04-30 1991-12-31 Micron Technology, Inc. Process for fabricating a stacked capacitor within a monolithic integrated circuit using oxygen implantation
JP2013231627A (en) * 2012-04-27 2013-11-14 Nippon Soken Inc Particle matter detection element, manufacturing method thereof, and particle matter detection sensor
US9528971B2 (en) 2012-04-27 2016-12-27 Denso Corporation Particulate matter detection element and method of manufacturing same

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