JPS6445155A - Memory integrated circuit - Google Patents
Memory integrated circuitInfo
- Publication number
- JPS6445155A JPS6445155A JP62202929A JP20292987A JPS6445155A JP S6445155 A JPS6445155 A JP S6445155A JP 62202929 A JP62202929 A JP 62202929A JP 20292987 A JP20292987 A JP 20292987A JP S6445155 A JPS6445155 A JP S6445155A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- memory
- memory integrated
- chip
- memories
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Dram (AREA)
- Die Bonding (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To facilitate a high degree of integration by a method wherein vertical multiple chip composition is applied to chip mounting. CONSTITUTION:A vertical multiple chip is composed of memories 1, 2, i.e., the memories 1, 2 are block constituents of the title memory integrated circuit and in case the chip select 3 is 'L', the memory 1 is to be selected, while in case the chip select 3 is 'H', the memory 2 is to be selected. Through these procedures, the circuit can be easily integrated to a high degree.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62202929A JPS6445155A (en) | 1987-08-13 | 1987-08-13 | Memory integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62202929A JPS6445155A (en) | 1987-08-13 | 1987-08-13 | Memory integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6445155A true JPS6445155A (en) | 1989-02-17 |
Family
ID=16465496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62202929A Pending JPS6445155A (en) | 1987-08-13 | 1987-08-13 | Memory integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6445155A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5172358A (en) * | 1989-03-08 | 1992-12-15 | Yamaha Corporation | Loudness control circuit for an audio device |
-
1987
- 1987-08-13 JP JP62202929A patent/JPS6445155A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5172358A (en) * | 1989-03-08 | 1992-12-15 | Yamaha Corporation | Loudness control circuit for an audio device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3571895D1 (en) | Semiconductor memory device having stacked-capacitor type memory cells and manufacturing method for the same | |
JPS56165371A (en) | Semiconductor device | |
EP0135942A3 (en) | Semiconductor memory and method of producing the same | |
IL93085A0 (en) | Extended integration semiconductor structure and method of making the same | |
DE3573932D1 (en) | Shape memory alloy and method for producing the same | |
EP0170250A3 (en) | Bipolar transistor and method for producing the bipolar transistor | |
EP0187596A3 (en) | Semiconductor memory device and method for producing the same | |
EP0057126A3 (en) | Transistor structure in an integrated circuit and process for its manufacture | |
EP0246767A3 (en) | Semiconductor memories | |
GB2169444B (en) | Improvements in or relating to methods of making semiconductor devices | |
EP0154314A3 (en) | Data i/o circuit with higher integration density for dram | |
EP0171718A3 (en) | Decoder circuit in an ic memory chip | |
JPS5793578A (en) | Mos memory cell and method of producing same | |
DE3278605D1 (en) | Intermediate structure for use in the manufacture of semiconductor devices, method of making field effect transistors and transistors | |
EP0270750A3 (en) | Sense circuit for the state of matrix cells in mos eprom memories | |
GB2168845B (en) | Bipolar transistor integrated circuit and method of manufacturing the same | |
EP0163031A3 (en) | Superconducting transistor | |
ATE64274T1 (en) | STABILIZATION OF TEA IN COLD WATER. | |
EP0078222A3 (en) | Integrated circuit bipolar memory cell | |
EP0035646A3 (en) | Integrated semiconductor memory matrix using one-fet cells | |
JPS6445155A (en) | Memory integrated circuit | |
EP0152082A3 (en) | An organic semiconductor electrolyte capacitor and process for producing the same | |
EP0186769A3 (en) | Improved integrated circuit chip structure | |
JPS5411682A (en) | Semiconductor device | |
JPS57115863A (en) | Dynamic semiconductor memory cell and method of producing same |