JPS6445155A - Memory integrated circuit - Google Patents

Memory integrated circuit

Info

Publication number
JPS6445155A
JPS6445155A JP62202929A JP20292987A JPS6445155A JP S6445155 A JPS6445155 A JP S6445155A JP 62202929 A JP62202929 A JP 62202929A JP 20292987 A JP20292987 A JP 20292987A JP S6445155 A JPS6445155 A JP S6445155A
Authority
JP
Japan
Prior art keywords
integrated circuit
memory
memory integrated
chip
memories
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62202929A
Other languages
Japanese (ja)
Inventor
Hiroshi Nakajima
Ueji Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
NEC Engineering Ltd
Original Assignee
NEC Corp
NEC Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, NEC Engineering Ltd filed Critical NEC Corp
Priority to JP62202929A priority Critical patent/JPS6445155A/en
Publication of JPS6445155A publication Critical patent/JPS6445155A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Dram (AREA)
  • Die Bonding (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To facilitate a high degree of integration by a method wherein vertical multiple chip composition is applied to chip mounting. CONSTITUTION:A vertical multiple chip is composed of memories 1, 2, i.e., the memories 1, 2 are block constituents of the title memory integrated circuit and in case the chip select 3 is 'L', the memory 1 is to be selected, while in case the chip select 3 is 'H', the memory 2 is to be selected. Through these procedures, the circuit can be easily integrated to a high degree.
JP62202929A 1987-08-13 1987-08-13 Memory integrated circuit Pending JPS6445155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62202929A JPS6445155A (en) 1987-08-13 1987-08-13 Memory integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62202929A JPS6445155A (en) 1987-08-13 1987-08-13 Memory integrated circuit

Publications (1)

Publication Number Publication Date
JPS6445155A true JPS6445155A (en) 1989-02-17

Family

ID=16465496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62202929A Pending JPS6445155A (en) 1987-08-13 1987-08-13 Memory integrated circuit

Country Status (1)

Country Link
JP (1) JPS6445155A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172358A (en) * 1989-03-08 1992-12-15 Yamaha Corporation Loudness control circuit for an audio device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172358A (en) * 1989-03-08 1992-12-15 Yamaha Corporation Loudness control circuit for an audio device

Similar Documents

Publication Publication Date Title
DE3571895D1 (en) Semiconductor memory device having stacked-capacitor type memory cells and manufacturing method for the same
JPS56165371A (en) Semiconductor device
EP0135942A3 (en) Semiconductor memory and method of producing the same
IL93085A0 (en) Extended integration semiconductor structure and method of making the same
DE3573932D1 (en) Shape memory alloy and method for producing the same
EP0170250A3 (en) Bipolar transistor and method for producing the bipolar transistor
EP0187596A3 (en) Semiconductor memory device and method for producing the same
EP0057126A3 (en) Transistor structure in an integrated circuit and process for its manufacture
EP0246767A3 (en) Semiconductor memories
GB2169444B (en) Improvements in or relating to methods of making semiconductor devices
EP0154314A3 (en) Data i/o circuit with higher integration density for dram
EP0171718A3 (en) Decoder circuit in an ic memory chip
JPS5793578A (en) Mos memory cell and method of producing same
DE3278605D1 (en) Intermediate structure for use in the manufacture of semiconductor devices, method of making field effect transistors and transistors
EP0270750A3 (en) Sense circuit for the state of matrix cells in mos eprom memories
GB2168845B (en) Bipolar transistor integrated circuit and method of manufacturing the same
EP0163031A3 (en) Superconducting transistor
ATE64274T1 (en) STABILIZATION OF TEA IN COLD WATER.
EP0078222A3 (en) Integrated circuit bipolar memory cell
EP0035646A3 (en) Integrated semiconductor memory matrix using one-fet cells
JPS6445155A (en) Memory integrated circuit
EP0152082A3 (en) An organic semiconductor electrolyte capacitor and process for producing the same
EP0186769A3 (en) Improved integrated circuit chip structure
JPS5411682A (en) Semiconductor device
JPS57115863A (en) Dynamic semiconductor memory cell and method of producing same