JPS6445118A - Solid-phase diffusion of boron - Google Patents
Solid-phase diffusion of boronInfo
- Publication number
- JPS6445118A JPS6445118A JP20221687A JP20221687A JPS6445118A JP S6445118 A JPS6445118 A JP S6445118A JP 20221687 A JP20221687 A JP 20221687A JP 20221687 A JP20221687 A JP 20221687A JP S6445118 A JPS6445118 A JP S6445118A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- diffusing
- semiconductor
- solid
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To obtain a deep diffusing layer having a high impurity concentration, by using a semiconductor plate having the same quality as that of a semiconductor substrate, on the surface of which a boron thin film is formed, as a solid- phase diffusing source, and diffusing the boron into the semiconductor substrate as impurities. CONSTITUTION:A boron thin film 21 is formed on the surface of a semiconductor plate having the same quality as that of a semiconductor substrate 10, into which the boron is diffused. With the semiconductor plate as a solid-phase diffusing source 20, the boron is diffused into the semiconductor substrate 10 as impurities. No contaminating material for a furnace or the substrate 10 is introduced into the diffusing furnace at all except for the semiconductor, e.g., silicon, constituting the substrate 10 and the boron that is diffused into the semiconductor. Therefore the contamination problem can be essentially solved. Thus, a deep diffusing layer 11 having high boron concentration can be formed in the semiconductor substrate 10 within an economical time by utilizing the high diffusing speed in the solid-phase diffusing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62202216A JPH06105694B2 (en) | 1987-08-13 | 1987-08-13 | Boron solid phase diffusion method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62202216A JPH06105694B2 (en) | 1987-08-13 | 1987-08-13 | Boron solid phase diffusion method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6445118A true JPS6445118A (en) | 1989-02-17 |
| JPH06105694B2 JPH06105694B2 (en) | 1994-12-21 |
Family
ID=16453884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62202216A Expired - Lifetime JPH06105694B2 (en) | 1987-08-13 | 1987-08-13 | Boron solid phase diffusion method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06105694B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5635422A (en) * | 1992-03-02 | 1997-06-03 | Motorola, Inc. | Diffusing dopants into a semiconductor wafer |
| JP2006310368A (en) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | Solar cell manufacturing method and solar cell |
| JP2006310373A (en) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | Solar cell manufacturing method, solar cell and semiconductor device manufacturing method |
| CN104392910A (en) * | 2013-09-06 | 2015-03-04 | 湖北台基半导体股份有限公司 | Buffer layer diffusion method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60138974A (en) * | 1983-12-27 | 1985-07-23 | Fuji Electric Corp Res & Dev Ltd | Manufacture of insulated gate type field effect transistor |
-
1987
- 1987-08-13 JP JP62202216A patent/JPH06105694B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60138974A (en) * | 1983-12-27 | 1985-07-23 | Fuji Electric Corp Res & Dev Ltd | Manufacture of insulated gate type field effect transistor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5635422A (en) * | 1992-03-02 | 1997-06-03 | Motorola, Inc. | Diffusing dopants into a semiconductor wafer |
| JP2006310368A (en) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | Solar cell manufacturing method and solar cell |
| JP2006310373A (en) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | Solar cell manufacturing method, solar cell and semiconductor device manufacturing method |
| CN104392910A (en) * | 2013-09-06 | 2015-03-04 | 湖北台基半导体股份有限公司 | Buffer layer diffusion method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06105694B2 (en) | 1994-12-21 |
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