JPS6442653A - Peeling solution for positive type photoresist - Google Patents

Peeling solution for positive type photoresist

Info

Publication number
JPS6442653A
JPS6442653A JP19946887A JP19946887A JPS6442653A JP S6442653 A JPS6442653 A JP S6442653A JP 19946887 A JP19946887 A JP 19946887A JP 19946887 A JP19946887 A JP 19946887A JP S6442653 A JPS6442653 A JP S6442653A
Authority
JP
Japan
Prior art keywords
component
solvent
peeling
solution
peeling solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19946887A
Other languages
Japanese (ja)
Other versions
JP2578821B2 (en
Inventor
Masaichi Kobayashi
Kazumasa Wakiya
Akihiro Shimizu
Hatsuyuki Tanaka
Toshimasa Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP62199468A priority Critical patent/JP2578821B2/en
Publication of JPS6442653A publication Critical patent/JPS6442653A/en
Application granted granted Critical
Publication of JP2578821B2 publication Critical patent/JP2578821B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Abstract

PURPOSE:To obtain the titled solution which has excellent peeling property even at a low treating temp., and does not corrode a metal layer and has less toxicity to a human body, by incorporating a specified solvent in a main component of dimethyl sulfoxide. CONSTITUTION:The titled solution contains the dimethyl sulfoxide as the main component A, and a solvent selected from diethylene glycol monoalkyl ether, diethylene glycol dialkyl ether, gamma-butylolactone and 1,3-dimethyl-2-imidazolidinone as the component B, and a nitrogen contg. org. hydroxyl compd. solvent as the component C. The peeling solution contains 1-50wt.% the component B and 0.1-5wt.% the component C. Thus, the peeling solution which has the excellent peeling property even at the temp. of <=100 deg.C and does not corrode the metal layer, and obviates consideration for health control and waste water treatment, is obtd.
JP62199468A 1987-08-10 1987-08-10 Stripper for positive photoresist Expired - Lifetime JP2578821B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62199468A JP2578821B2 (en) 1987-08-10 1987-08-10 Stripper for positive photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62199468A JP2578821B2 (en) 1987-08-10 1987-08-10 Stripper for positive photoresist

Publications (2)

Publication Number Publication Date
JPS6442653A true JPS6442653A (en) 1989-02-14
JP2578821B2 JP2578821B2 (en) 1997-02-05

Family

ID=16408304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62199468A Expired - Lifetime JP2578821B2 (en) 1987-08-10 1987-08-10 Stripper for positive photoresist

Country Status (1)

Country Link
JP (1) JP2578821B2 (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0723205A1 (en) * 1995-01-10 1996-07-24 Mitsubishi Gas Chemical Company, Inc. Removing agent composition and method of removing photoresist using the same
WO1996032451A1 (en) * 1995-04-13 1996-10-17 Henkel Kommanditgesellschaft Auf Aktien A paint stripper
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6040117A (en) * 1997-02-24 2000-03-21 Jsr Corporation Negative photoresist stripping liquid composition
EP1035446A2 (en) 1999-03-08 2000-09-13 Mitsubishi Gas Chemical Company, Inc. Resist stripping composition and process for stripping resist
US6413923B2 (en) 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6423480B2 (en) 1999-12-27 2002-07-23 Sumitomo Chemical Company, Limited Remover composition
US6579668B1 (en) 1999-08-19 2003-06-17 Dongjin Semichem Co., Ltd. Photoresist remover composition
US6686322B1 (en) 1998-11-12 2004-02-03 Sharp Kabushiki Kaisha Cleaning agent and cleaning process using the same
US6861210B2 (en) 2001-05-21 2005-03-01 Dongjin Semichen Co., Ltd. Resist remover composition
US7015183B2 (en) 2001-05-21 2006-03-21 Dongjin Semichem Co., Ltd. Resist remover composition
US7105265B2 (en) 2003-12-12 2006-09-12 Tokyo Ohka Kogyo Co., Ltd. Method for removing resist pattern
US7135445B2 (en) 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
JP2007132996A (en) * 2005-11-08 2007-05-31 Tokuyama Corp Cleaning and removing agent
WO2007063767A1 (en) 2005-12-01 2007-06-07 Mitsubishi Gas Chemical Company, Inc. Cleaning solution for semiconductor device or display device, and cleaning method
JP2007536566A (en) * 2004-05-07 2007-12-13 ドウジン セミケム カンパニー リミテッド (Photo) Composition for resist removal
JP2007536565A (en) * 2004-05-07 2007-12-13 ドウジン セミケム カンパニー リミテッド (Photo) Composition for resist removal
FR2912151A1 (en) * 2007-02-05 2008-08-08 Arkema France Crystallization point lowering additive for dimethyl sulfoxide, e.g. during use as paint stripper or surface cleaner, comprises diol and/or triol, especially glycerol
CN115291483A (en) * 2022-09-02 2022-11-04 昆山晶科微电子材料有限公司 Semiconductor stripping liquid and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5784456A (en) * 1980-09-15 1982-05-26 Shipley Co Stripping composition and use thereof
JPS57165834A (en) * 1981-04-06 1982-10-13 Hitachi Chem Co Ltd Peeling solution for cured film of photopolymerizing composition
JPS6026945A (en) * 1983-07-25 1985-02-09 ジエイ・テイ・ベ−カ−・ケミカル・カンパニ− Stripping composition and stripping of resist
JPS6066424A (en) * 1983-09-22 1985-04-16 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6249355A (en) * 1985-08-10 1987-03-04 Nagase Sangyo Kk Stripping agent composition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5784456A (en) * 1980-09-15 1982-05-26 Shipley Co Stripping composition and use thereof
JPS57165834A (en) * 1981-04-06 1982-10-13 Hitachi Chem Co Ltd Peeling solution for cured film of photopolymerizing composition
JPS6026945A (en) * 1983-07-25 1985-02-09 ジエイ・テイ・ベ−カ−・ケミカル・カンパニ− Stripping composition and stripping of resist
JPS6066424A (en) * 1983-09-22 1985-04-16 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6249355A (en) * 1985-08-10 1987-03-04 Nagase Sangyo Kk Stripping agent composition

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0723205A1 (en) * 1995-01-10 1996-07-24 Mitsubishi Gas Chemical Company, Inc. Removing agent composition and method of removing photoresist using the same
WO1996032451A1 (en) * 1995-04-13 1996-10-17 Henkel Kommanditgesellschaft Auf Aktien A paint stripper
GB2299812B (en) * 1995-04-13 1998-08-12 Henkel Kgaa A paint stripper
US6191086B1 (en) 1996-09-06 2001-02-20 Arch Specialty Chemicals, Inc. Cleaning composition and method for removing residues
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6020292A (en) * 1996-09-06 2000-02-01 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6040117A (en) * 1997-02-24 2000-03-21 Jsr Corporation Negative photoresist stripping liquid composition
US6686322B1 (en) 1998-11-12 2004-02-03 Sharp Kabushiki Kaisha Cleaning agent and cleaning process using the same
EP1035446A2 (en) 1999-03-08 2000-09-13 Mitsubishi Gas Chemical Company, Inc. Resist stripping composition and process for stripping resist
US6323169B1 (en) 1999-03-08 2001-11-27 Mitsubishi Gas Chemical Company, Inc. Resist stripping composition and process for stripping resist
US6579668B1 (en) 1999-08-19 2003-06-17 Dongjin Semichem Co., Ltd. Photoresist remover composition
US6413923B2 (en) 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US7402552B2 (en) 1999-11-15 2008-07-22 Fujifilm Electronic Materials U.S.A., Inc. Non-corrosive cleaning composition for removing plasma etching residues
US7001874B2 (en) 1999-11-15 2006-02-21 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6423480B2 (en) 1999-12-27 2002-07-23 Sumitomo Chemical Company, Limited Remover composition
US6861210B2 (en) 2001-05-21 2005-03-01 Dongjin Semichen Co., Ltd. Resist remover composition
US7015183B2 (en) 2001-05-21 2006-03-21 Dongjin Semichem Co., Ltd. Resist remover composition
US7135445B2 (en) 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US7105265B2 (en) 2003-12-12 2006-09-12 Tokyo Ohka Kogyo Co., Ltd. Method for removing resist pattern
JP2007536566A (en) * 2004-05-07 2007-12-13 ドウジン セミケム カンパニー リミテッド (Photo) Composition for resist removal
JP2007536565A (en) * 2004-05-07 2007-12-13 ドウジン セミケム カンパニー リミテッド (Photo) Composition for resist removal
JP2007132996A (en) * 2005-11-08 2007-05-31 Tokuyama Corp Cleaning and removing agent
WO2007063767A1 (en) 2005-12-01 2007-06-07 Mitsubishi Gas Chemical Company, Inc. Cleaning solution for semiconductor device or display device, and cleaning method
US7998914B2 (en) 2005-12-01 2011-08-16 Mitsubishi Gas Chemical Company, Inc. Cleaning solution for semiconductor device or display device, and cleaning method
FR2912151A1 (en) * 2007-02-05 2008-08-08 Arkema France Crystallization point lowering additive for dimethyl sulfoxide, e.g. during use as paint stripper or surface cleaner, comprises diol and/or triol, especially glycerol
WO2008107611A3 (en) * 2007-02-05 2008-11-06 Arkema France Dimethylsulfoxide formulation in mixture with additive for lowering the crystallization point of same, and applications of said mixture
JP2010518192A (en) * 2007-02-05 2010-05-27 アルケマ フランス Dimethyl sulfoxide blends mixed with additives to reduce crystal points and use of this mixture
US7959767B2 (en) 2007-02-05 2011-06-14 Arkema France Dimethyl sulfoxide formulation in mixture with additive for lowering the crystallization point of same, and applications of said mixture
US8741826B2 (en) 2007-02-05 2014-06-03 Arkema France Dimethylsulfoxide formulation in mixture with additive for lowering the crystallization point of same, and applications of said mixture
EP3795648A1 (en) 2007-02-05 2021-03-24 Gaylord Chemical Company LLC Formulation of dimethyl sulfoxide in mixture with an additive capable of reducing the crystallisation point of the latter, and uses of said mixture
CN115291483A (en) * 2022-09-02 2022-11-04 昆山晶科微电子材料有限公司 Semiconductor stripping liquid and preparation method thereof

Also Published As

Publication number Publication date
JP2578821B2 (en) 1997-02-05

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term