JPS6442129A - Cleaning and removal of organic substance - Google Patents
Cleaning and removal of organic substanceInfo
- Publication number
- JPS6442129A JPS6442129A JP19807587A JP19807587A JPS6442129A JP S6442129 A JPS6442129 A JP S6442129A JP 19807587 A JP19807587 A JP 19807587A JP 19807587 A JP19807587 A JP 19807587A JP S6442129 A JPS6442129 A JP S6442129A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processed
- organic substance
- gas containing
- oxygen gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To remove an organic substance at high speed and uniformly without increasing a temperature of a substance to be processed by a method wherein oxygen gas containing ozone is heated in advance and then flows and more than a prescribed amount of oxygen gas containing ozone which is heated and supplied flows from two or more places to a narrow space on the surface of the substrate by using a partition plate composed of an ultraviolet transmitting material. CONSTITUTION:A UV-rays radiating discharge lamp 1 is arranged on a face whose area is larger than an area of a substrate 3 to be processed; inside a lamphouse 10, e.g., nitrogen gas is introduced from an inlet port 7 and is discharged from an outlet part 7' ; a region around the lamp 1 is purged. Two or more quartz tubes 5 are arranged at a partition plate 2 composed of synthetic quartz; oxygen gas containing ozone is blown from inlet ports 8 onto the surface of the substrate 3 to be processed. The oxygen gas containing ozone is heated by using heaters 6 arranged around the quartz tubes 5. By this setup, an organic substance is removed at high speed and uniformly without increasing a temperature of the substrate to be processed so much; it is possible to prevent an impurity contained in the organic substance from being diffused into the substrate and a circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19807587A JPS6442129A (en) | 1987-08-10 | 1987-08-10 | Cleaning and removal of organic substance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19807587A JPS6442129A (en) | 1987-08-10 | 1987-08-10 | Cleaning and removal of organic substance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6442129A true JPS6442129A (en) | 1989-02-14 |
Family
ID=16385101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19807587A Pending JPS6442129A (en) | 1987-08-10 | 1987-08-10 | Cleaning and removal of organic substance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442129A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01287926A (en) * | 1988-05-13 | 1989-11-20 | Teru Kyushu Kk | Ashing device |
| JPH02231717A (en) * | 1989-03-03 | 1990-09-13 | Toshiba Corp | Resist ashing method |
| JPH0346225A (en) * | 1989-07-13 | 1991-02-27 | Nec Corp | Resist ashing device |
| US5175583A (en) * | 1990-02-08 | 1992-12-29 | Hyundai Electronics Industries Co., Ltd. | Discharge tray for an electronic photo processor |
| US6601594B2 (en) * | 1997-05-09 | 2003-08-05 | Semitool, Inc. | Apparatus and method for delivering a treatment liquid and ozone to treat the surface of a workpiece |
| US6869487B1 (en) | 1997-05-09 | 2005-03-22 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US7378355B2 (en) | 1997-05-09 | 2008-05-27 | Semitool, Inc. | System and methods for polishing a wafer |
| US7404863B2 (en) | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
| JP2021146231A (en) * | 2020-03-16 | 2021-09-27 | ウシオ電機株式会社 | Gas supplying device |
| JP2021146232A (en) * | 2020-03-16 | 2021-09-27 | ウシオ電機株式会社 | Gas supplying device |
-
1987
- 1987-08-10 JP JP19807587A patent/JPS6442129A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01287926A (en) * | 1988-05-13 | 1989-11-20 | Teru Kyushu Kk | Ashing device |
| JPH02231717A (en) * | 1989-03-03 | 1990-09-13 | Toshiba Corp | Resist ashing method |
| JPH0346225A (en) * | 1989-07-13 | 1991-02-27 | Nec Corp | Resist ashing device |
| US5175583A (en) * | 1990-02-08 | 1992-12-29 | Hyundai Electronics Industries Co., Ltd. | Discharge tray for an electronic photo processor |
| US6601594B2 (en) * | 1997-05-09 | 2003-08-05 | Semitool, Inc. | Apparatus and method for delivering a treatment liquid and ozone to treat the surface of a workpiece |
| US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
| US6869487B1 (en) | 1997-05-09 | 2005-03-22 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US7378355B2 (en) | 1997-05-09 | 2008-05-27 | Semitool, Inc. | System and methods for polishing a wafer |
| US7404863B2 (en) | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
| JP2021146231A (en) * | 2020-03-16 | 2021-09-27 | ウシオ電機株式会社 | Gas supplying device |
| JP2021146232A (en) * | 2020-03-16 | 2021-09-27 | ウシオ電機株式会社 | Gas supplying device |
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