JPS6441261A - Manufacture of complementary insulated gate semiconductor device - Google Patents
Manufacture of complementary insulated gate semiconductor deviceInfo
- Publication number
- JPS6441261A JPS6441261A JP62197607A JP19760787A JPS6441261A JP S6441261 A JPS6441261 A JP S6441261A JP 62197607 A JP62197607 A JP 62197607A JP 19760787 A JP19760787 A JP 19760787A JP S6441261 A JPS6441261 A JP S6441261A
- Authority
- JP
- Japan
- Prior art keywords
- type impurity
- impurity diffusion
- pmosfet
- source
- diffusion layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain effective channel length for gate length without concern of off-set, by performoring medium concentration addition of a P<->type impurity diffusion layer of the source.drain of a PMOSFET part before side wall formation. CONSTITUTION:Well regions 102, 103, field oxide films 104a-104c, and gate electrodes 105a, 105b are formed in a silicon substrate 101. By adding N-type impurity of medium cencentration, N<->type impurity diffusion layers 106a, 106b of the source.drain of an NMOSFET are formed. By adding P-type impurity of medium concentration, P<->impurity diffusion layers 109a, 109b of a PMOSFET are formed. By etching an oxide film layer 110, side-walls 111a-111d are formed. By forming masks 112, 114, and adding respectively N-type and P-type impurity of high concentration, source-drains 113a, 113b, 115a, 115b (N<+>, P<+> impurity diffusion layers) of N, PMOSFET are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62197607A JPS6441261A (en) | 1987-08-07 | 1987-08-07 | Manufacture of complementary insulated gate semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62197607A JPS6441261A (en) | 1987-08-07 | 1987-08-07 | Manufacture of complementary insulated gate semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6441261A true JPS6441261A (en) | 1989-02-13 |
Family
ID=16377284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62197607A Pending JPS6441261A (en) | 1987-08-07 | 1987-08-07 | Manufacture of complementary insulated gate semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6441261A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100889199B1 (en) * | 2001-10-15 | 2009-03-16 | 다이와 세이꼬 가부시끼가이샤 | Fishing bucket |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61125165A (en) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | Manufacture of semiconductor device |
-
1987
- 1987-08-07 JP JP62197607A patent/JPS6441261A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61125165A (en) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100889199B1 (en) * | 2001-10-15 | 2009-03-16 | 다이와 세이꼬 가부시끼가이샤 | Fishing bucket |
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