JPS6441261A - Manufacture of complementary insulated gate semiconductor device - Google Patents

Manufacture of complementary insulated gate semiconductor device

Info

Publication number
JPS6441261A
JPS6441261A JP62197607A JP19760787A JPS6441261A JP S6441261 A JPS6441261 A JP S6441261A JP 62197607 A JP62197607 A JP 62197607A JP 19760787 A JP19760787 A JP 19760787A JP S6441261 A JPS6441261 A JP S6441261A
Authority
JP
Japan
Prior art keywords
type impurity
impurity diffusion
pmosfet
source
diffusion layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62197607A
Other languages
Japanese (ja)
Inventor
Shiyuuji Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62197607A priority Critical patent/JPS6441261A/en
Publication of JPS6441261A publication Critical patent/JPS6441261A/en
Pending legal-status Critical Current

Links

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain effective channel length for gate length without concern of off-set, by performoring medium concentration addition of a P<->type impurity diffusion layer of the source.drain of a PMOSFET part before side wall formation. CONSTITUTION:Well regions 102, 103, field oxide films 104a-104c, and gate electrodes 105a, 105b are formed in a silicon substrate 101. By adding N-type impurity of medium cencentration, N<->type impurity diffusion layers 106a, 106b of the source.drain of an NMOSFET are formed. By adding P-type impurity of medium concentration, P<->impurity diffusion layers 109a, 109b of a PMOSFET are formed. By etching an oxide film layer 110, side-walls 111a-111d are formed. By forming masks 112, 114, and adding respectively N-type and P-type impurity of high concentration, source-drains 113a, 113b, 115a, 115b (N<+>, P<+> impurity diffusion layers) of N, PMOSFET are formed.
JP62197607A 1987-08-07 1987-08-07 Manufacture of complementary insulated gate semiconductor device Pending JPS6441261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62197607A JPS6441261A (en) 1987-08-07 1987-08-07 Manufacture of complementary insulated gate semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62197607A JPS6441261A (en) 1987-08-07 1987-08-07 Manufacture of complementary insulated gate semiconductor device

Publications (1)

Publication Number Publication Date
JPS6441261A true JPS6441261A (en) 1989-02-13

Family

ID=16377284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62197607A Pending JPS6441261A (en) 1987-08-07 1987-08-07 Manufacture of complementary insulated gate semiconductor device

Country Status (1)

Country Link
JP (1) JPS6441261A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100889199B1 (en) * 2001-10-15 2009-03-16 다이와 세이꼬 가부시끼가이샤 Fishing bucket

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125165A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125165A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100889199B1 (en) * 2001-10-15 2009-03-16 다이와 세이꼬 가부시끼가이샤 Fishing bucket

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