JPS6439746A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS6439746A
JPS6439746A JP19666187A JP19666187A JPS6439746A JP S6439746 A JPS6439746 A JP S6439746A JP 19666187 A JP19666187 A JP 19666187A JP 19666187 A JP19666187 A JP 19666187A JP S6439746 A JPS6439746 A JP S6439746A
Authority
JP
Japan
Prior art keywords
film
metal wiring
metal
wiring film
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19666187A
Other languages
Japanese (ja)
Inventor
Hitoshi Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Rika Co Ltd
Original Assignee
Tokai Rika Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Rika Co Ltd filed Critical Tokai Rika Co Ltd
Priority to JP19666187A priority Critical patent/JPS6439746A/en
Publication of JPS6439746A publication Critical patent/JPS6439746A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce in size a whole semiconductor chip and to suppress a malfunction of an interlayer insulating film by providing a first metal wiring film for controlling a small current and a second metal wiring film larger in thickness than the first film for controlling a large current on the same chip. CONSTITUTION:A first metal film B having a thickness, such as 1mum adapted for a metal wiring film for a small current controlling circuit element 2 is formed on a wafer A formed with the element 2 and a large current controlling circuit element 3 on the same semiconductor chip 1, the part corresponding to the former 2 is patterned in a predetermined shape to form a small current metal wiring film 4. Then, an interlayer insulating film 7 having a contact hole 7a arriving at the film 4 is formed on the wafer A. Then, a second metal film D having a thickness larger than that of the metal B, such as 4mum is formed on the wafer A, the part corresponding to the latter 3 and the part corresponding to the interlayer insulating film are patterned in a predetermined shape to form a large current metal wiring film 5 and an auxiliary metal wiring film 6 for the former 2.
JP19666187A 1987-08-06 1987-08-06 Manufacture of semiconductor integrated circuit Pending JPS6439746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19666187A JPS6439746A (en) 1987-08-06 1987-08-06 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19666187A JPS6439746A (en) 1987-08-06 1987-08-06 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6439746A true JPS6439746A (en) 1989-02-10

Family

ID=16361493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19666187A Pending JPS6439746A (en) 1987-08-06 1987-08-06 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6439746A (en)

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