JPS6439690A - Semiconductor circuit - Google Patents

Abstract

PURPOSE:To realize a circuit with low power consumption, a small required area, easy to be manufactured, and capable of performing a high-speed operation, by using a MIS transistor as a memory cell, and using a bipolar transistor in the peripheral circuit of a memory cell array. CONSTITUTION:The memory cell array 11 is constituted of the memory cell consisting of the flip-flop of the MIS transistor. Address buffer circuits 12x and 12y, address driver circuits 13x and 13y, and furthermore, a readout and writing control circuit 14, a sense amplifier circuit 15, a differential amplifier 17, and a reference voltage generating circuit 19 are formed by the hybrid circuits of the bipolar transistors and the MIS transistors, and a multiplexer 16 is constituted of the bipolar transistor. Since the MIS transistor is used in the memory cell, power consumption can be reduced, and manufacturing can be performed easily, and since the bipolar transistor is used in the peripheral circuit, the high-speed operation can be obtained.