JPS6439668U - - Google Patents
Info
- Publication number
- JPS6439668U JPS6439668U JP13493887U JP13493887U JPS6439668U JP S6439668 U JPS6439668 U JP S6439668U JP 13493887 U JP13493887 U JP 13493887U JP 13493887 U JP13493887 U JP 13493887U JP S6439668 U JPS6439668 U JP S6439668U
- Authority
- JP
- Japan
- Prior art keywords
- pulse
- control
- voltage
- semiconductor laser
- adjustable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Description
添附図面は本考案の一実施例を示す構成図であ
る。
１……単安定マルチバイブレータ、２……可変
抵抗器、３……コンデンサ、４……三端子可変出
力形安定化電源回路、５……調節回路、５ａ……
可変抵抗器、７……バツフア回路、９……ＦＥＴ
、１０……高出力半導体レーザ。
The accompanying drawings are block diagrams showing one embodiment of the present invention. 1... Monostable multivibrator, 2... Variable resistor, 3... Capacitor, 4... Three-terminal variable output stabilized power supply circuit, 5... Adjustment circuit, 5a...
Variable resistor, 7...Buffer circuit, 9...FET
, 10... High power semiconductor laser.
Claims (1)
間幅の制御パルスを外部信号に応答して出力する
パルス出力手段と、出力電圧の調節が可能で調節
設定された制御電圧を出力する安定化電源手段と
、前記制御パルスと前記制御電圧とを入力し前記
制御パルスの時間幅だけ前記制御電圧に応じた駆
動電圧を出力する手段と、半導体レーザの通電回
路に挿入され前記駆動電圧をゲート入力として前
記半導体レーザへの通電を制御するＦＥＴとを有
することを特徴とする半導体レーザ駆動装置。 Pulse output means whose output pulse width is adjustable and which outputs a control pulse of a set and regulated time width in response to an external signal; and a stabilized power supply whose output voltage is adjustable and which outputs a set and regulated control voltage. means for inputting the control pulse and the control voltage and outputting a drive voltage according to the control voltage for the time width of the control pulse; A semiconductor laser driving device comprising: an FET that controls energization to the semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13493887U JPH0451502Y2 (en) | 1987-09-03 | 1987-09-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13493887U JPH0451502Y2 (en) | 1987-09-03 | 1987-09-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6439668U true JPS6439668U (en) | 1989-03-09 |
| JPH0451502Y2 JPH0451502Y2 (en) | 1992-12-03 |
Family
ID=31394131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13493887U Expired JPH0451502Y2 (en) | 1987-09-03 | 1987-09-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0451502Y2 (en) |
-
1987
- 1987-09-03 JP JP13493887U patent/JPH0451502Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0451502Y2 (en) | 1992-12-03 |
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