JPS6437492A - Single crystal growing apparatus - Google Patents
Single crystal growing apparatusInfo
- Publication number
- JPS6437492A JPS6437492A JP19504387A JP19504387A JPS6437492A JP S6437492 A JPS6437492 A JP S6437492A JP 19504387 A JP19504387 A JP 19504387A JP 19504387 A JP19504387 A JP 19504387A JP S6437492 A JPS6437492 A JP S6437492A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- face
- melted
- chamber
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To prevent the contact of a gas generated from a crucible with a high- temperature heater, crucible, heat insulating material, etc., and contrive the extension of these lives, by sucking and discharging the gas generated from the crucible at higher position that that of the crucible together with a carrier gas. CONSTITUTION:A cylindrical radiation screen 7 made of metal is concentrically and vertically arranged so as to surround the pulling-up area of a single crystal 5 around a pulling up port 1b in a chamber 1 and the lower end thereof is set so as to be situated to a prescribed height on the melted face in the crucible 3. An inert gas charged into the chamber 1 is led to the central part of melted face in the crucible 3 and led to the fringe part of the crucible through gap between melted liquid face and screen 7 along the melted face from the central part. The inert gas is discharged from a discharge port 8 opened in the upper part of side wall of the chamber 1 which is located in the higher position than that of opening of the crucible 3 and upper end of a heater 4 through the gap between the melt face and radiation screen 7 along the melt face. In the above-mentioned apparatus, after melting a raw material, a seed crystal 6 is dipped into the melt in the crucible and then raised while rotating and a single crystal 5 is grown in the lower end of the seed crystal 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19504387A JPS6437492A (en) | 1987-08-04 | 1987-08-04 | Single crystal growing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19504387A JPS6437492A (en) | 1987-08-04 | 1987-08-04 | Single crystal growing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437492A true JPS6437492A (en) | 1989-02-08 |
Family
ID=16334593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19504387A Pending JPS6437492A (en) | 1987-08-04 | 1987-08-04 | Single crystal growing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437492A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56149400A (en) * | 1980-04-18 | 1981-11-19 | Hitachi Ltd | Manufacturing apparatus for single crystal |
JPS5740119A (en) * | 1980-07-18 | 1982-03-05 | Skf Kugellagerfabriken Gmbh | Thin bearing bush made by pressdrawing |
JPS5930792A (en) * | 1982-08-10 | 1984-02-18 | Toshiba Corp | Apparatus for growing single crystal |
JPS62138384A (en) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | Method and device for pulling single crystal |
-
1987
- 1987-08-04 JP JP19504387A patent/JPS6437492A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56149400A (en) * | 1980-04-18 | 1981-11-19 | Hitachi Ltd | Manufacturing apparatus for single crystal |
JPS5740119A (en) * | 1980-07-18 | 1982-03-05 | Skf Kugellagerfabriken Gmbh | Thin bearing bush made by pressdrawing |
JPS5930792A (en) * | 1982-08-10 | 1984-02-18 | Toshiba Corp | Apparatus for growing single crystal |
JPS62138384A (en) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | Method and device for pulling single crystal |
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